US6083798A
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US
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Method of producing a metal oxide semiconductor device with raised source/drain
Assignee: GlobalFoundries Inc
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Filing: 1998-05-26
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Granted: 2000-07-04
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Expires: 2018-05-26
Abstract
Abstract A semiconductor device and a method of making the device with a raised source/drain has a semiconductive material that is non-selectively deposited in a layer over the device area. The semiconductive material is then etched to form spacers that will form the raised soure/drain areas following doping of the spacers. The gate of the semiconductor device is protected during the etching by an etch stop layer that is grown or deposited over the structure to be protected, e.g., the gate, prior to the deposition of the semiconductive material layer. Lightly doped drain ion implantation is performed prior to the formation of the spacers, and source-drain ion implantation is performed preferably after the formation of the spacers, to create the shallow junctions.
Inventors
- 👤 Ming-Ren Lin
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 02:35
CPC Classifications
H; H10; H10D; H10D30/00; H10D30/01; H10D30/021; H10D30/022; H10D30/60; H10D30/601; H10D64/00; H10D64/20; H10D64/23; H10D64/251; H10D64/258; H10D64/259; H10P; H10P32/00; H10P32/10; H10P32/14; H10P32/1408; H10P32/1414; H10P32/17; H10P32/171
Claims Analysis
Total Claims: 20
Claim 1
Independent Claim
119 words
A method of forming a semiconductor device with raised source and drain, comprising the steps of: forming an etch stop layer directly on an upper surface of a gate conductor of the semiconductor device; depositing a layer of semiconductor material over the semiconductor device including the etch stop layer and the gate conductor; etching the semiconductor layer to form spacers of a desired width and thickness, the etch stop layer protecting the gate during the etching; and doping the spacers to create the raised source and drain, wherein the step of etching includes an initial etching back of the semiconductor layer to clear a field area, and further etching the semiconductor layer to a desired final thickness and width.
Claim 2
Independent Claim
119 words
A method of forming a semiconductor device with raised source and drain, comprising the steps of: forming an etch stop layer directly on an upper surface of a gate conductor of the semiconductor device; depositing a layer of semiconductor material over the semiconductor device including the etch stop layer and the gate conductor; etching the semiconductor layer to form spacers of a desired width and thickness, the etch stop layer protecting the gate during the etching; and doping the spacers to create the raised source and drain, wherein the step of etching includes an initial etching back of the semiconductor layer to clear a field area, and further etching the semiconductor layer to a desired final thickness and width.
Claim 3
Dependent Claim
31 words
The method of claim 1, further comprising performing ion implantation to form shallow junctions in a substrate of the semiconductor device prior to the depositing of the layer of semiconductor material.
Claim 4
Dependent Claim
36 words
The method of claim 2, wherein the step of performing ion implantation includes the steps of performing lightly doped drain (LDD) ion implantation to form ultra-shallow junctions and performing source/drain ion implantation to form shallow junctions.
Claim 5
Dependent Claim
30 words
The method of claim 1, further comprising performing lightly doped drain (LDD) ion implantation, and performing source/drain ion implantation to form shallow junctions in a substrate of the semiconductor device.
Claim 6
Dependent Claim
33 words
The method of claim 4, further comprising performing solid state diffusion to create the shallow junctions after the spacers are formed, with the spacers serving as diffusion sources during the solid state diffusion.
Claim 7
Dependent Claim
13 words
The method of claim 2, wherein the step of etching includes anisotropic etching.
Claim 8
Dependent Claim
21 words
The method of claim 5, further comprising forming sidewall spacers of the gate after the step of performing LDD ion implantation.
Claim 9
Dependent Claim
22 words
The method of claim 5, further comprising forming sidewall spacers of the gate prior to the step of performing LDD ion implantation.
Claim 10
Independent Claim
136 words
A method of forming a semiconductor device with raised source and drain, comprising the steps of: forming an etch stop layer directly on an upper surface of a gate conductor formed on a semiconductor substrate; forming first spacers on side walls of the gate conductor and not the etch stop layer; non-selectively depositing a layer of semiconductor material over the semiconductor device including the etch stop layer, gate conductor, and first spacers; etching the semiconductor layer to form second spacers of a desired width and thickness; and doping the second spacers to create the raised source and drain, wherein the step of etching includes an initial etching back of the semiconductor layer to clear a field area, and a further etching of the semiconductor layer to form the second spacers of a desired width and thickness.
Claim 11
Independent Claim
136 words
A method of forming a semiconductor device with raised source and drain, comprising the steps of: forming an etch stop layer directly on an upper surface of a gate conductor formed on a semiconductor substrate; forming first spacers on side walls of the gate conductor and not the etch stop layer; non-selectively depositing a layer of semiconductor material over the semiconductor device including the etch stop layer, gate conductor, and first spacers; etching the semiconductor layer to form second spacers of a desired width and thickness; and doping the second spacers to create the raised source and drain, wherein the step of etching includes an initial etching back of the semiconductor layer to clear a field area, and a further etching of the semiconductor layer to form the second spacers of a desired width and thickness.
Claim 12
Dependent Claim
31 words
The method of claim 9, further comprising performing ion implantation to form shallow junctions in a substrate of the semiconductor device prior to the depositing of the layer of semiconductor material.
Claim 13
Dependent Claim
36 words
The method of claim 10, wherein the step of performing ion implantation includes the steps of performing lightly doped drain (LDD) ion implantation to form ultra-shallow junctions and performing source/drain ion implantation to form shallow junctions.
Claim 14
Dependent Claim
45 words
The method of claim 9, further comprising performing lightly doped drain (LDD) ion implantation prior to the forming of the second spacers, and performing source/drain ion implantation after the forming of the second spacers to form shallow junctions in a substrate of the semiconductor device.
Claim 15
Dependent Claim
35 words
The method of claim 12, further comprising performing solid state diffusion to create the shallow junctions after the second spacers are formed, with the second spacers serving as diffusion sources during the solid state diffusion.
Claim 16
Dependent Claim
13 words
The method of claim 9, wherein the step of etching includes anisotropic etching.
Claim 17
Independent Claim
155 words
A method of forming a semiconductor device with raised source and drain, comprising the sequential steps of: forming an etch stop layer directly on only a gate conductor formed on a semiconductor substrate; performing ion implantation to form shallow junctions in a substrate of the semiconductor device; forming first spacers on side walls of the gate conductor, vertical surfaces of said first spacer not extending above an upper surface of said gate conductor; performing an ion implantation into the semiconductor substrate using the first spacers as a mask; non-selectively depositing a layer of semiconductor material over the semiconductor device; performing a first etching of the semiconductor layer to clear a field area; performing a second etching, different from the first etching, of the semiconductor layer to form second spacers of a desired width and thickness on the semiconductor substrate and the first spacers; and doping the second spacers to create the raised source and drain.
Claim 18
Independent Claim
155 words
A method of forming a semiconductor device with raised source and drain, comprising the sequential steps of: forming an etch stop layer directly on only a gate conductor formed on a semiconductor substrate; performing ion implantation to form shallow junctions in a substrate of the semiconductor device; forming first spacers on side walls of the gate conductor, vertical surfaces of said first spacer not extending above an upper surface of said gate conductor; performing an ion implantation into the semiconductor substrate using the first spacers as a mask; non-selectively depositing a layer of semiconductor material over the semiconductor device; performing a first etching of the semiconductor layer to clear a field area; performing a second etching, different from the first etching, of the semiconductor layer to form second spacers of a desired width and thickness on the semiconductor substrate and the first spacers; and doping the second spacers to create the raised source and drain.
Claim 19
Dependent Claim
35 words
The method of claim 15, further comprising performing solid state diffusion to create the shallow junctions after the second spacers are formed, with the second spacers serving as diffusion sources during the solid state diffusion.
Claim 20
Dependent Claim
14 words
The method of claim 16, wherein the first and second etching includes anisotropic etching.
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