Patent US6078072A successfully refreshed from Google Patents.
US6078072A
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Semiconductor device having a capacitor
Assignee: Renesas Electronics Corp
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Filing: 1998-05-06
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Granted: 2000-06-20
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Expires: 2018-05-06
Abstract
Abstract A lower electrode layer 1 of a capacitor 10 is formed by sputtering performed at a temperature lower than 450 DEG C. in an atmosphere containing oxygen, and thereby the lower electrode layer 1 thus formed contains oxygen. Thereby, a method of manufacturing a semiconductor device having the capacitor can suppress current leak, and can prevent peeling of an electrode.
Inventors
- 👤 Tomonori Okudaira
- 👤 Yoshikazu Tsunemine
- 👤 Keiichiro Kashihara
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 02:53
CPC Classifications
H; H10; H10B; H10B12/00; H10B12/01; H10B12/02; H10B12/03; H10B12/033; H10D; H10D1/00; H10D1/60; H10D1/68; H10D1/692; H10D1/682
Claims Analysis
Total Claims: 5
Claim 1
Independent Claim
75 words
A semiconductor device having a capacitor comprising: a capacitor dielectric layer containing a high dielectric material; and first and second electrode layers sandwiching said capacitor dielectric layer, at least one of said first and second electrode layers including: a first metal layer; and a second metal layer located in contact with said capacitor dielectric layer between said capacitor dielectric layer and said first metal layer and containing 0.01 wt. % to 5 wt. % oxygen.
Claim 2
Dependent Claim
75 words
A semiconductor device having a capacitor comprising: a capacitor dielectric layer containing a high dielectric material; and first and second electrode layers sandwiching said capacitor dielectric layer, at least one of said first and second electrode layers including: a first metal layer; and a second metal layer located in contact with said capacitor dielectric layer between said capacitor dielectric layer and said first metal layer and containing 0.01 wt. % to 5 wt. % oxygen.
Claim 3
Dependent Claim
40 words
The semiconductor device having the capacitor according to claim 1, wherein at least one of said first and second metal layers includes at least one kind of material selected from a group containing platinum, iridium, rhodium, ruthenium, palladium and osmium.
Claim 4
Dependent Claim
47 words
The semiconductor device having the capacitor according to claim 2, wherein said high dielectric material includes at least one kind of material selected from a group containing tantalum pentoxide, barium strontium titanate, lead lanthanum zirconate titanate, strontium bismuthate tantalate, lead zirconate titanate, strontium titanate and barium titanate.
Claim 5
Dependent Claim
111 words
The semiconductor device having the capacitor according to claim 1, further comprising: a semiconductor substrate having a main surface; a conductive region formed at said main surface; an insulating layer formed on said conductive region and having a hole reaching a portion of said conductive region; and a barrier metal layer positioned between said first electrode layer and said conductive region electrically connected through said hole, wherein said first electrode layer has at least a portion formed on said barrier metal layer, said second electrode layer is formed on said first electrode layer with said capacitor dielectric layer therebetween, and said first electrode layer has said first and second metal layers.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2003-06-20 | 2003-12-20 | 2004-06-20 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2007-06-20 | 2007-12-20 | 2008-06-20 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2011-06-20 | 2011-12-20 | 2012-06-20 | $7700.00 | Window Closed / Lapsed |