Patent US6069815A successfully refreshed from Google Patents.
US6069815A
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Semiconductor memory having hierarchical bit line and/or word line architecture
Assignee: Infineon Technologies AG
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Filing: 1997-12-18
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Granted: 2000-05-30
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Expires: 2017-12-18
Abstract
Abstract Disclosed is a semiconductor memory having a hierarchical bit line and/or word line architecture. In one embodiment, a memory having a hierarchical bit line architecture, particularly suitable for cells smaller than 8F 2 , includes a master bit line pair in each column, including first and second master bit lines with portions vertically spaced from one another. The first and second master bit lines twist with respect to one another in the vertical direction such that the first master bit line alternately overlies and underlies the second master bit line. A plurality of local bit line pairs in each column are coupled to memory cells, with at least one of the local bit lines coupled to a master bit line. In other embodiments, hierarchical word line configurations are disclosed including master word lines, sub-master word lines, and local word lines, electrically interconnected to one another via either switches, electrical contacts, or electrical circuits.
Inventors
- 👤 Gerhard Mueller
- 👤 Toshiaki Kirihata
- 👤 Hing Wong
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-29 16:58
CPC Classifications
G; G11; G11C; G11C11/00; G11C11/21; G11C11/34; G11C11/40; G11C11/401; G11C11/4063; G11C11/407; G11C11/409; G11C7/00; G11C7/18; G11C8/00; G11C8/14
Claims Analysis
Total Claims: 18
Claim 1
Independent Claim
192 words
A semiconductor memory having a memory cell array of memory cells arranged in rows and columns, comprising: a master bit line pair in each column, comprising first and second master bit lines with portions of the first and second master bit lines being vertically spaced from one another, and the first and second master bit lines twisting with respect to one another in the vertical direction such that the first master bit line alternately overlies and underlies the second master bit line, said vertical direction being perpendicular to a major surface of the memory cell array, the first and second master bit lines remaining substantially parallel in vertical planes; a plurality of local bit line pairs in each column coupled to memory cells, with at least one of the local bit lines operatively coupled to a master bit line and a hierarchical word line configuration comprising a plurality of master word lines, each associated with at least one row, at least one sub-master word line operatively coupled to each said word line, and a plurality of local word lines coupled to said memory cells and operatively coupled to the sub-master word line.
Claim 2
Dependent Claim
192 words
A semiconductor memory having a memory cell array of memory cells arranged in rows and columns, comprising: a master bit line pair in each column, comprising first and second master bit lines with portions of the first and second master bit lines being vertically spaced from one another, and the first and second master bit lines twisting with respect to one another in the vertical direction such that the first master bit line alternately overlies and underlies the second master bit line, said vertical direction being perpendicular to a major surface of the memory cell array, the first and second master bit lines remaining substantially parallel in vertical planes; a plurality of local bit line pairs in each column coupled to memory cells, with at least one of the local bit lines operatively coupled to a master bit line and a hierarchical word line configuration comprising a plurality of master word lines, each associated with at least one row, at least one sub-master word line operatively coupled to each said word line, and a plurality of local word lines coupled to said memory cells and operatively coupled to the sub-master word line.
Claim 3
Dependent Claim
73 words
The semiconductor memory of claim 1, wherein a folded bit line architecture is employed, said first and second master bit lines comprise true and complementary master bit lines, respectively, and at least one of the local bit line pairs in a column having a true local bit line operatively coupled to the true master bit line and a complementary local bit line operatively coupled to the complementary master bit line of the column.
Claim 4
Dependent Claim
62 words
The semiconductor memory of claim 1, wherein a first local bit line of a given local bit line pair is operatively and selectively coupled to said first master bit line through a first switch and a second local bit line of the given local bit line pair is operatively and selectively coupled to the second master bit line via a second switch.
Claim 5
Dependent Claim
32 words
The semiconductor memory of claim 1, wherein plural of said local bit line pairs in each column are selectively coupled to the master bit line pair of the column via respective switches.
Claim 6
Dependent Claim
23 words
The semiconductor memory of claim 2, wherein the true and complementary local bit lines are disposed in alternating positions in the column direction.
Claim 7
Dependent Claim
43 words
The semiconductor memory of claim 2, wherein the true and complementary local bit lines periodically undergo a vertical twist with respect to one another such that the true and complementary local word lines alternately overlie and underlie one another in the vertical direction.
Claim 8
Dependent Claim
17 words
The semiconductor memory of claim 1, wherein said memory cells are 8F 2 or smaller memory cells.
Claim 9
Dependent Claim
17 words
The semiconductor memory of claim 1, wherein said memory cells are larger than 8F 2 memory cells.
Claim 10
Dependent Claim
202 words
A semiconductor memory having a memory cell array of memory cells arranged in rows and columns, comprising: a master bit line pair in a column, the master bit line pair comprising first and second master bit lines with portions of the first and second master bit lines being vertically spaced from one another, and the first and second master bit lines twisting with respect to one another in the vertical direction such that the first master bit line alternately overlies and underlies the second master bit line, said vertical direction being perpendicular to a major surface of the memory cell array, the first and second master bit lines remaining substantially parallel in vertical planes; a plurality of local bit line pairs in each column coupled to memory cells, with at least one of the local bit lines operatively coupled to a master bit line and a hierarchical word line configuration comprising a plurality of master word lines, wherein a master word line is associated with at least one row, at least one sub-master word line operatively coupled to the master word line, and a plurality of local word lines coupled to said memory cells and operatively coupled to the sub-master word line.
Claim 11
Dependent Claim
202 words
A semiconductor memory having a memory cell array of memory cells arranged in rows and columns, comprising: a master bit line pair in a column, the master bit line pair comprising first and second master bit lines with portions of the first and second master bit lines being vertically spaced from one another, and the first and second master bit lines twisting with respect to one another in the vertical direction such that the first master bit line alternately overlies and underlies the second master bit line, said vertical direction being perpendicular to a major surface of the memory cell array, the first and second master bit lines remaining substantially parallel in vertical planes; a plurality of local bit line pairs in each column coupled to memory cells, with at least one of the local bit lines operatively coupled to a master bit line and a hierarchical word line configuration comprising a plurality of master word lines, wherein a master word line is associated with at least one row, at least one sub-master word line operatively coupled to the master word line, and a plurality of local word lines coupled to said memory cells and operatively coupled to the sub-master word line.
Claim 12
Dependent Claim
73 words
The semiconductor memory of claim 9, wherein a folded bit line architecture is employed, said first and second master bit lines comprise true and complementary master bit lines, respectively, and at least one of the local bit line pairs in a column having a true local bit line operatively coupled to the true master bit line and a complementary local bit line operatively coupled to the complementary master bit line of the column.
Claim 13
Dependent Claim
62 words
The semiconductor memory of claim 9, wherein a first local bit line of a given local bit line pair is operatively and selectively coupled to said first master bit line through a first switch and a second local bit line of the given local bit line pair is operatively and selectively coupled to the second master bit line via a second switch.
Claim 14
Dependent Claim
32 words
The semiconductor memory of claim 9, wherein plural of said local bit line pairs in each column are selectively coupled to the master bit line pair of the column via respective switches.
Claim 15
Dependent Claim
23 words
The semiconductor memory of claim 10, wherein the true and complementary local bit lines are disposed in alternating positions in the column direction.
Claim 16
Dependent Claim
43 words
The semiconductor memory of claim 10, wherein the true and complementary local bit lines periodically undergo a vertical twist with respect to one another such that the true and complementary local word lines alternately overlie and underlie one another in the vertical direction.
Claim 17
Dependent Claim
17 words
The semiconductor memory of claim 9, wherein said memory cells are 8F 2 or smaller memory cells.
Claim 18
Dependent Claim
17 words
The semiconductor memory of claim 9, wherein said memory cells are larger than 8F 2 memory cells.
References Cited (Backward Citations)
US4980860A
Cited
US5214601A
Cited
US4977538A
Cited
US5136543A
Cited
US5091887A
Cited
US5250831A
Cited
US5107459A
Cited
US5610871A
Cited
US5815428A
Cited
JPH0917974A
Cited
WO1997028532A1
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2003-05-30 | 2003-11-29 | 2004-05-30 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2007-05-30 | 2007-11-29 | 2008-05-30 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2011-05-30 | 2011-11-29 | 2012-05-30 | $7700.00 | Window Closed / Lapsed |