US6069041A
Expired / Lapsed
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Process for manufacturing non-volatile semiconductor memory device by introducing nitrogen atoms
Assignee: Sharp Corp
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Filing: 1997-11-19
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Granted: 2000-05-30
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Expires: 2017-11-19
Abstract
Abstract A process for manufacturing a non-volatile semiconductor memory device by forming a tunnel dielectric film, a floating gate electrode, an interlayer capacitive film and a control gate electrode successively on a semiconductor substrate includes introducing nitrogen atoms into at least one of an interface between the floating gate electrode and the interlayer capacitive film and an interface between the interlayer capacitive film and the control gate electrode.
Inventors
- 👤 Takuji Tanigami
- 👤 Shinichi Sato
- 👤 Kenichi Azuma
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 02:46
CPC Classifications
H; H10; H10D; H10D64/00; H10D64/01; H10D64/013; H10D64/01302; H10D64/01332; H10D64/01336; H10D64/01338; H10D64/031; H10D64/035; H10D64/60; H10D64/66; H10D64/68; H10D64/681; H10D64/693; H10D64/01342; Y; Y10; Y10S; Y10S438/00; Y10S438/91
Claims Analysis
Total Claims: 5
Claim 1
Independent Claim
68 words
A process for manufacturing a non-volatile semiconductor memory device by forming a tunnel dielectric film, a floating gate electrode, an interlayer capacitive film and a control gate electrode successively on a semiconductor substrate, wherein the process comprises introducing nitrogen atoms into at least an interface between the floating gate electrode and the interlayer capacitive film and an interface between the interlayer capacitive film and the control gate electrode.
Claim 2
Dependent Claim
68 words
A process for manufacturing a non-volatile semiconductor memory device by forming a tunnel dielectric film, a floating gate electrode, an interlayer capacitive film and a control gate electrode successively on a semiconductor substrate, wherein the process comprises introducing nitrogen atoms into at least an interface between the floating gate electrode and the interlayer capacitive film and an interface between the interlayer capacitive film and the control gate electrode.
Claim 3
Dependent Claim
85 words
A process for manufacturing a non-volatile semiconductor memory device according to claim 1, wherein introduction of nitrogen atoms into the interface between the tunnel dielectric film and the floating gate electrode and the interface between the floating gate electrode and the interlayer capacitive film is performed by the steps of forming the floating gate electrode on the tunnel dielectric film, then doping nitrogen atoms into the floating gate electrode, depositing the interlayer capacitive film on the floating gate electrode and carrying out a thermal treatment.
Claim 4
Dependent Claim
62 words
A process for manufacturing a non-volatile semiconductor memory device according to claim 1, wherein introduction of nitrogen atoms into the interface between the interlayer capacitive film and the control gate electrode is performed by the steps of forming the control gate electrode on the interlayer capacitive film, then doping nitrogen atoms into the control gate electrode and carrying out a thermal treatment.
Claim 5
Dependent Claim
86 words
A process for manufacturing a non-volatile semiconductor memory device according to claim 3, wherein introduction of nitrogen atoms into the interface between the tunnel dielectric film and the floating gate electrode and into the interface between the floating gate electrode and the interlayer capacitive film is performed by the steps of forming the floating gate electrode on the tunnel dielectric film, then doping nitrogen atoms into the floating gate electrode, depositing the interlayer capacitive film on the floating gate electrode and carrying out a thermal treatment.
References Cited (Backward Citations)
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JPH05267684A
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JPH0629314A
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JPH0677493A
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2003-05-30 | 2003-11-29 | 2004-05-30 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2007-05-30 | 2007-11-29 | 2008-05-30 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2011-05-30 | 2011-11-29 | 2012-05-30 | $7700.00 | Window Closed / Lapsed |