US6063673A
Expired / Lapsed
US
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Transistor device structures, and methods for forming such structures
Assignee: Micron Technology Inc
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Filing: 1998-08-31
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Granted: 2000-05-16
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Expires: 2018-08-31
Abstract
Abstract In one aspect, a method for forming a transistor device on a semiconductor substrate, comprising: a) forming a transistor gate on the substrate; b) forming a first polarity source active region and a first polarity drain active region operatively adjacent the transistor gate; and c) forming a second polarity internal junction region, the second polarity internal junction region being entirely received within one of the first polarity regions. In another aspect, a transistor device, comprising: a) a transistor gate on a semiconductor substrate; b) a first polarity source active region and a first polarity drain active region operatively adjacent the transistor gate; and c) a second polarity internal junction region entirely received within one of the first polarity regions. In yet another aspect, the invention includes a resistor, comprising: a) a gate on a semiconductor substrate, the gate being electrically powered with a gate voltage; b) a first polarity source active region and a first polarity drain active region operatively adjacent the electrically powered gate; c) a second polarity internal junction region entirely received within one of the first polarity regions; and d) a current between the first polarity source active region and the first polarity drain active region, the current being substantially linearly dependent on a voltage at the drain region.
Inventors
- 👤 David Y. Kao
- 👤 Jeff Zhiqiang Wu
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-03 12:06
CPC Classifications
H; H10; H10D; H10D30/00; H10D30/01; H10D30/021; H10D30/0223; H10D30/0227; H10D30/0221; H10D30/60; H10D30/601; H10D30/603; H10D62/00; H10D62/10; H10D62/17; H10D62/213; H10D62/221; H10D62/235; H10D62/299; H10D62/307
Claims Analysis
Total Claims: 15
Claim 1
Independent Claim
104 words
A method of forming a transistor device on a semiconductor substrate, comprising: forming a transistor gate on the semiconductor substrate; defining a source active region and a drain active region proximate the transistor gate; forming first conductivity-type source and drain LDD regions within the source and drain active regions, respectively; forming first conductivity-type source and drain regions within the source and drain active regions, respectively; and forming a second conductivity-type region selectively within the drain active region and not within the source active region, the second conductivity-type region being entirely received within one or both of the drain LDD region and the drain region.
Claim 2
Independent Claim
104 words
A method of forming a transistor device on a semiconductor substrate, comprising: forming a transistor gate on the semiconductor substrate; defining a source active region and a drain active region proximate the transistor gate; forming first conductivity-type source and drain LDD regions within the source and drain active regions, respectively; forming first conductivity-type source and drain regions within the source and drain active regions, respectively; and forming a second conductivity-type region selectively within the drain active region and not within the source active region, the second conductivity-type region being entirely received within one or both of the drain LDD region and the drain region.
Claim 3
Dependent Claim
17 words
The method of claim 1 wherein the first conductivity-type is n-type and the second conductivity-type is p-type.
Claim 4
Dependent Claim
17 words
The method of claim 1 wherein the first conductivity-type is p-type and the second conductivity-type is n-type.
Claim 5
Dependent Claim
18 words
The method of claim 1 wherein the second conductivity-type region is entirely received within the drain LDD region.
Claim 6
Dependent Claim
24 words
The method of claim 1 wherein the forming the second conductivity-type region comprises angled implanting of second conductivity-type dopant to beneath the transistor gate.
Claim 7
Independent Claim
190 words
A method of forming a transistor device on a semiconductor substrate, comprising: forming a transistor gate on the semiconductor substrate, the transistor gate comprising a lateral edge; defining a source active region and a drain active region proximate the transistor gate; implanting a first conductivity-type dopant into the source and drain active regions to form first conductivity-type implant regions within the source and drain active regions; after forming the first conductivity-type implant regions, forming a spacer along the transistor gate lateral edge and over a portion of the drain active region; forming a patterned masking layer to cover the source active region while not covering at least some of the drain active region; and while the spacer is along the transistor gate lateral edge and while the patterned masking layer is over the source active region, implanting a second conductivity-type dopant into the drain active region to form an internal junction implant region, the internal junction implant region being entirely received within the first conductivity type implant region in the drain active region; and wherein one of the first and second conductivity types is p-type and the other is n-type.
Claim 8
Independent Claim
190 words
A method of forming a transistor device on a semiconductor substrate, comprising: forming a transistor gate on the semiconductor substrate, the transistor gate comprising a lateral edge; defining a source active region and a drain active region proximate the transistor gate; implanting a first conductivity-type dopant into the source and drain active regions to form first conductivity-type implant regions within the source and drain active regions; after forming the first conductivity-type implant regions, forming a spacer along the transistor gate lateral edge and over a portion of the drain active region; forming a patterned masking layer to cover the source active region while not covering at least some of the drain active region; and while the spacer is along the transistor gate lateral edge and while the patterned masking layer is over the source active region, implanting a second conductivity-type dopant into the drain active region to form an internal junction implant region, the internal junction implant region being entirely received within the first conductivity type implant region in the drain active region; and wherein one of the first and second conductivity types is p-type and the other is n-type.
Claim 9
Dependent Claim
17 words
The method of claim 6 wherein the first conductivity-type is n-type and the second conductivity-type is p-type.
Claim 10
Dependent Claim
17 words
The method of claim 6 wherein the first conductivity-type is p-type and the second conductivity-type is n-type.
Claim 11
Dependent Claim
25 words
The method of claim 6 wherein the implanting the second conductivity-type dopant comprises angled implanting of the second conductivity-type dopant to beneath the transistor gate.
Claim 12
Independent Claim
231 words
A method of forming a transistor device on a semiconductor substrate, comprising: forming a transistor gate on the semiconductor substrate, the transistor gate comprising lateral edges; defining a source active region and a drain active region operatively adjacent the transistor gate; implanting a first conductivity-type dopant into the source and drain active regions to form first conductivity-type LDD implant regions within the source and drain active regions; after forming the LDD implant regions, forming an insulative layer over the transistor gate lateral edges; forming a patterned masking layer to cover the source active region while leaving the drain active region exposed; while the insulative layer is over the transistor gate lateral edges and while the patterned masking layer is over the source active region, implanting a second conductivity-type dopant into the drain active region to form an internal junction implant region, the internal junction implant region being entirely received within the first conductivity type LDD implant region in the drain active region; removing the patterned masking layer from over the source active region; after removing the patterned masking layer, forming sidewall spacers along the transistor gate lateral edges; while the sidewall spacers are along the transistor gate lateral edges, forming first conductivity type source and drain regions within the source and drain active regions; and wherein one of the first and second conductivity types is p-type and the other is n-type.
Claim 13
Independent Claim
231 words
A method of forming a transistor device on a semiconductor substrate, comprising: forming a transistor gate on the semiconductor substrate, the transistor gate comprising lateral edges; defining a source active region and a drain active region operatively adjacent the transistor gate; implanting a first conductivity-type dopant into the source and drain active regions to form first conductivity-type LDD implant regions within the source and drain active regions; after forming the LDD implant regions, forming an insulative layer over the transistor gate lateral edges; forming a patterned masking layer to cover the source active region while leaving the drain active region exposed; while the insulative layer is over the transistor gate lateral edges and while the patterned masking layer is over the source active region, implanting a second conductivity-type dopant into the drain active region to form an internal junction implant region, the internal junction implant region being entirely received within the first conductivity type LDD implant region in the drain active region; removing the patterned masking layer from over the source active region; after removing the patterned masking layer, forming sidewall spacers along the transistor gate lateral edges; while the sidewall spacers are along the transistor gate lateral edges, forming first conductivity type source and drain regions within the source and drain active regions; and wherein one of the first and second conductivity types is p-type and the other is n-type.
Claim 14
Dependent Claim
17 words
The method of claim 10 wherein the first conductivity-type is n-type and the second conductivity-type is p-type.
Claim 15
Dependent Claim
17 words
The method of claim 10 wherein the first conductivity-type is p-type and the second conductivity-type is n-type.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2003-05-16 | 2003-11-15 | 2004-05-16 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2007-05-16 | 2007-11-15 | 2008-05-16 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2011-05-16 | 2011-11-15 | 2012-05-16 | $7700.00 | Window Closed / Lapsed |