Methods of making a trench storage DRAM cell including a step transfer device

Claim 2

A process for forming a memory cell, said process comprising the steps of: providing a substrate; forming at least one deep trench of a deep trench capacitor in the substrate; forming at least one FET in the substrate disposed over at least a portion of the at least one deep trench; forming a gate of the at least one FET disposed over at least a portion of the at least one deep trench; forming doped regions of the at least one FET arranged on adjacent sides of the gate and separated from the gate by an insulating layer; and forming at least one isolation region in the substrate surrounding the at least one FET and having a greater depth than the at least one FET.

Claim 3

A process for forming a memory cell, according to claim 1, further comprising the steps of: forming an opening in the substrate prior to forming the deep trench, said opening determining positioning of said gate of said FET relative to said deep trench; depositing oxide in the opening; and forming oxide spacers the opening prior to forming said deep trench.

Claim 4

A process for forming a memory cell, said method comprising the steps of: providing a substrate having at least one deep trench of a deep trench capacitor filled with n+ doped polycrystalline silicon, collar oxide arranged between portions of said n+ doped polycrystalline silicon filling said at least one deep trench and said substrate, node dielectric arranged beneath said collar oxide between portions of said n+ doped polycrystalline silicon filling said at least one deep trench and said substrate, and buried n+ capacitor plates formed therein; creating at least one opening for at least one buried strap by removing a portion of the collar oxide and node dielectric; diffusing dopant out of the at least one deep trench opening by thermal cycling to form a buried strap; forming a gate oxide over exposed surfaces of the substrate; filling an open area over said deep trench with n+ doped polycrystalline silicon; planarizing an upper surface of the device; forming at least one isolation region in the device at least partially overlapping said at least one deep trench and extending deeper than the at least one buried strap; doping exposed silicon substrate to form an n+ source/drain diffusion of a transfer device of the memory cell; forming at least one support circuit CMOS device; forming at least one wordline trench and at least one contact hole and filling them with an electrically conducting material; forming at least one bit-line contact and filling it with an electrically conductive material; and forming at least one bit line over the at least one bit line contact.

Claim 5

A process for forming a memory cell, said method comprising the steps of: providing a substrate having at least one deep trench of a deep trench capacitor filled with n+ doped polycrystalline silicon, collar oxide arranged between portions of said n+ doped polycrystalline silicon filling said at least one deep trench and said substrate, node dielectric arranged beneath said collar oxide between portions of said n+ doped polycrystalline silicon filling said at least one deep trench and said substrate, and buried n+ capacitor plates formed therein; creating at least one opening for at least one buried strap by removing a portion of the collar oxide and node dielectric; diffusing dopant out of the at least one deep trench opening by thermal cycling to form a buried strap; forming a gate oxide over exposed surfaces of the substrate; filling an open area over said deep trench with n+ doped polycrystalline silicon; planarizing an upper surface of the device; forming at least one isolation region in the device at least partially overlapping said at least one deep trench and extending deeper than the at least one buried strap; doping exposed silicon substrate to form an n+ source/drain diffusion of a transfer device of the memory cell; forming at least one support circuit CMOS device; forming at least one wordline trench and at least one contact hole and filling them with an electrically conducting material; forming at least one bit-line contact and filling it with an electrically conductive material; and forming at least one bit line over the at least one bit line contact.

Claim 6

The process for forming a memory cell, according to claim 3, further comprising the steps of: forming an opening in said substrate prior to forming said deep trench, said opening determining positioning of said gate of said FET relative to said deep trench; depositing oxide in the opening; and forming at least one spacer in said opening; etching said deep trench; and removing said spacer prior to forming said gate oxide.

Claim 7

A process for forming a memory cell, said process comprising the steps of: providing a substrate having a pad structure including a first layer of oxide, a layer of nitride, and a second layer of oxide formed thereon; at least two deep trenches of deep trench capacitors filled with n+ doped polycrystalline silicon formed therein and having a depression above said n+ doped polycrystalline silicon; a collar oxide arranged between portions of each of said n+ doped polycrystalline silicon filling said deep trenches and said substrate; node dielectric arranged between portions of each of said n+ doped polycrystalline silicon filling said deep trenches and said substrate; and buried n+ capacitor plates formed therein; removing exposed collar oxide and node dielectric to create an opening for a buried strap; diffusing n+ dopant out of the deep trenches to form the buried strap; forming a transfer device gate; growing gate oxide over exposed portions of the substrate; filling the depressions of the deep trenches with n+ doped polycrystalline silicon; and forming a word line contact, a word line, a bit line contact and a bit line.

Claim 8

A process for forming a memory cell, said process comprising the steps of: providing a substrate having a pad structure including a first layer of oxide, a layer of nitride, and a second layer of oxide formed thereon; at least two deep trenches of deep trench capacitors filled with n+ doped polycrystalline silicon formed therein and having a depression above said n+ doped polycrystalline silicon; a collar oxide arranged between portions of each of said n+ doped polycrystalline silicon filling said deep trenches and said substrate; node dielectric arranged between portions of each of said n+ doped polycrystalline silicon filling said deep trenches and said substrate; and buried n+ capacitor plates formed therein; removing exposed collar oxide and node dielectric to create an opening for a buried strap; diffusing n+ dopant out of the deep trenches to form the buried strap; forming a transfer device gate; growing gate oxide over exposed portions of the substrate; filling the depressions of the deep trenches with n+ doped polycrystalline silicon; and forming a word line contact, a word line, a bit line contact and a bit line.

Claim 9

The process for forming a memory cell, according to claim 5, further comprising the steps of: forming an opening in said substrate prior to forming said deep trench, said opening determining positioning of said gate of said FET relative to said deep trench; depositing oxide in the opening; and forming at least one spacer in said opening; etching said deep trench; and removing said spacer prior to forming said gate oxide.