US5034787A
Expired / Lapsed
US
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Structure and fabrication method for a double trench memory cell device
Assignee: International Business Machines Corp
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Filing: 1990-06-28
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Granted: 1991-07-23
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Expires: 2010-06-28
Abstract
Abstract A method is described for fabricating a novel double trench memory structure including a shallow trench access transistor adjacent to a deep trench storage capacitor. The described three-dimensional DRAM cell structure consists of shallow trench access transistors and deep trench storage capacitors in a n-well disposed on a semiconductor substrate. In the fabrication method, the vertical access transistors are built adjacent to the one side of one deep substrate-plate trench storage capacitor. Arrangement of the access transistors and trench storage capacitor are different from that of standard single trench cells. The layout of the double trench cell not only provides the advantages of small size, high packing density, lower soft error rate, and higher noise immunity for storage capacitor, but also leads to better performance and an efficient sensing scheme. The structure may be fabricated for p-channel or n-channel embodiments.
Inventors
- 👤 Sang H. Dhong
- 👤 Wei Hwang
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-30 10:52
CPC Classifications
H; H10; H10B; H10B12/00; H10B12/30; H10B12/39; H10B12/395; H10D; H10D1/00; H10D1/60; H10D1/62; H10D1/66; H10D1/665
Claims Analysis
Total Claims: 9
Claim 1
Independent Claim
368 words
A double trench semiconductor memory storage structure comprising: a substrate of semiconductor material including a lower layer of silicon and an upper layer of epitaxial silicon, a first trench formed in said upper and lower layers of said semiconductor substrate, said first trench including a bottom wall and side wall portions, said bottom wall and side walls having a dielectric layer disposed thereon to form a storage capacitor insulator, a storage capacitor plate element composed of conductive material disposed in said first trench, a second trench formed in said upper layer of said semiconductor substrate adjacent to and partially disposed in a portion of said first trench, said second trench being disposed in an off-set position relative to said first trench wherein a first portion of said second trench is disposed in said first trench and a second portion of said second trench is disposed in said layer of epitaxial silicon, said second trench including bottom and side walls having a layer of dielectric material disposed thereon, wherein a portion of said bottom wall and a side wall of said second trench are in contact with said conductive material in said first trench, and wherein said layer of dielectric material disposed on said portion of said bottom wall and said side wall of said second trench in contact with said layer of epitaxial silicon is substantially thicker than the layer of epitaxial silicon is substantially thicker than the layer of dielectric material on the portion of said bottom wall and sidewall not in contact with said conductive material, a vertical access transistor device transfer gate and word line element composed of conductive material disposed in said second trench, wherein said substantially thicker layer of dielectric material is disposed between said conductive material in said second trench and said conductive material in said first trench for electrical isolation, a vertical access transistor device source element disposed in said upper layer of said substrate in contact with one of said side walls of said second trench, a vertical access transistor device drain element disposed in said upper layer of said substrate in contact with said bottom wall of said second trench and with said conductive material in said first trench.
Claim 2
Dependent Claim
368 words
A double trench semiconductor memory storage structure comprising: a substrate of semiconductor material including a lower layer of silicon and an upper layer of epitaxial silicon, a first trench formed in said upper and lower layers of said semiconductor substrate, said first trench including a bottom wall and side wall portions, said bottom wall and side walls having a dielectric layer disposed thereon to form a storage capacitor insulator, a storage capacitor plate element composed of conductive material disposed in said first trench, a second trench formed in said upper layer of said semiconductor substrate adjacent to and partially disposed in a portion of said first trench, said second trench being disposed in an off-set position relative to said first trench wherein a first portion of said second trench is disposed in said first trench and a second portion of said second trench is disposed in said layer of epitaxial silicon, said second trench including bottom and side walls having a layer of dielectric material disposed thereon, wherein a portion of said bottom wall and a side wall of said second trench are in contact with said conductive material in said first trench, and wherein said layer of dielectric material disposed on said portion of said bottom wall and said side wall of said second trench in contact with said layer of epitaxial silicon is substantially thicker than the layer of epitaxial silicon is substantially thicker than the layer of dielectric material on the portion of said bottom wall and sidewall not in contact with said conductive material, a vertical access transistor device transfer gate and word line element composed of conductive material disposed in said second trench, wherein said substantially thicker layer of dielectric material is disposed between said conductive material in said second trench and said conductive material in said first trench for electrical isolation, a vertical access transistor device source element disposed in said upper layer of said substrate in contact with one of said side walls of said second trench, a vertical access transistor device drain element disposed in said upper layer of said substrate in contact with said bottom wall of said second trench and with said conductive material in said first trench.
Claim 3
Dependent Claim
43 words
A double trench semiconductor memory storage structure according to claim 1 wherein said conductive material in said second trench extends higher than the upper substate layer and higher than said side walls of said second trench to provide a memory word line element.
Claim 4
Dependent Claim
97 words
A double trench semiconductor memory storage structure according to claim 2 further including a layer of word line insulating material disposed over said upper layer of said substrate and said conductive word line element material, said layer of insulating material including an opening therein above said source element to provide access to said source element, and a layer of conductive material disposed over said layer of word line insulating material to form a memory bit line element, said conductive bit line material extending through said opening in said word line insulating material to contact said source element.
Claim 5
Dependent Claim
59 words
A double trench semiconductor memory storage structure according to claim 3 wherein said upper layer of epitaxial silicon of said substrate has a first semiconductive conductivity and includes a well region therein composed of second conductivity dopants opposite to said first conductivity and wherein said first and second trenches are disposed in said well region of said upper layer.
Claim 6
Dependent Claim
31 words
A double trench semiconductor memory storage structure according to claim 4 wherein said substrate is composed of an upper layer of p-conductivity epitaxial material on a lower layer of p+ silicon.
Claim 7
Dependent Claim
26 words
A double trench semiconductor memory storage structure according to claim 4 wherein said conductive material disposed in said first and second trench is p+ conductivity polysilicon.
Claim 8
Dependent Claim
26 words
A double trench semiconductor memory storage structure according to claim 4 wherein said source element and said drain element are composed of p+ conductivity junction material.
Claim 9
Dependent Claim
25 words
A double trench semiconductor memory storage structure according to claim 4 wherein said well region is composed of n+ doped silicon in said p-epitaxial layer.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1994-07-22 | 1995-01-21 | 1995-07-23 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1998-07-22 | 1999-01-21 | 1999-07-23 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2002-07-22 | 2003-01-21 | 2003-07-23 | $7700.00 | Window Closed / Lapsed |