Dynamic random access memory having buried word lines

Claim 2

A semiconductor memory comprising, a semiconductor substrate; a plurality of memory cells, each including a deep hole bored in said semiconductor substrate; a capacitor formed on a sidewall portion at the lower half of said deep hole, the capacitor comprising a storage node disposed inside said deep hole, a sheath type plate electrode, a capacitance insulating film disposed between said storage node and said sheath type plate electrode and an insulating film encompassing said sheath type plate electrode; and a switching transistor formed immediately above said capacitor; word lines for selecting said memory cells, wherein at least half of each word line forms a gate of said switching transistor of each memory cell and is buried in one of a plurality of elongated recesses formed in a surface portion of said semiconductor substrate; bit lines for transferring data; and voltage impression means connected to said sheath type plate electrode which impresses a voltage to said sheath type plate electrode which is different from a voltage impressed to said semiconductor substrate.

Claim 3

A semiconductor memory according to claim 1, wherein the portion of each said word line buried in said elongated recess is two word lines.

Claim 4

A semiconductor memory according to claim 1, wherein each said word line is disposed through an insulating film disposed therebelow.

Claim 5

A semiconductor memory according to claim 1, wherein said memory cells constitute a folded bit line structure and have an amplifier for differentially amplifying the bit of said data lines.

Claim 6

A semiconductor memory according to claim 1, wherein said voltage impression means comprises a high concentration impurity region having an opposite conductivity type to that of said semiconductor substrate and being disposed at the bottom of said deep hole of each memory cell, and a wiring layer connected electrically to said high concentration impurity region and extending to the surface portion of said semiconductor substrate.

Claim 7

A semiconductor memory according to claim 1, wherein each of said word line is completely buried in one of said elongated recesses and a substantially flat insulating layer is disposed between said bit lines and said word lines.

Claim 8

A semiconductor memory according to claim 1, further including high concentration impurity regions being disposed at the bottom of said deep hole of each memory cell, wherein high concentration impurity regions disposed in at least two adjacent memory cells are arranged to be in contact with each other and wherein at least some of said high concentration impurity regions are arranged so that they do not contact a depletion layer which extends from adjacent high concentration impurity regions.

Claim 9

A semiconductor memory according to claim 1, wherein said word line contains at least polycrystalline silicon and is connected electrically to a word shunt line having lower specific resistance than that of said word line.

Claim 10

A semiconductor memory according to claim 1, wherein said switching transistor of each memory cell has a source and a drain, self-aligned to said gate of said switching transistor.

Claim 11

A semiconductor memory according to claim 1, further comprising a peripheral circuit of p-channel transistors disposed in n-type well regions and n-channel transistors disposed in p-type well regions.

Claim 12

A semiconductor memory comprising, a semiconductor substrate; a plurality of memory cells, each including a deep hole bored in said semiconductor substrate; a capacitor formed on a sidewall portion at the lower half of said deep hole, the capacitor comprising a storage node disposed inside said deep hole, a sheath type plate electrode, a capacitance insulating film disposed between said storage node and said sheath type plate electrode and an insulating film encompassing said sheath type plate electrode; and a switching transistor formed immediately above said capacitor, the switching transistor having a source and a drain self-aligned to a gate; word lines connected to the gate of said switching transistor of each memory cell for selecting said memory cells, said word lines and said gates being formed integrally with each other, wherein each word line is buried in one of a plurality of elongated recesses formed in a surface of said semiconductor substrate, said recesses being elongated in the same direction as the direction in which said word lines extend; bit lines connected to the drains or sources of said switching transistor of each memory cell for transferring data from said memory cells; and voltage impression means connected to said sheath type plate electrode which impresses a voltage to said sheath type plate electrode which is different from a voltage impressed to said semiconductor substrate.

Claim 13

A semiconductor memory comprising, a semiconductor substrate; a plurality of memory cells, each including a deep hole bored in said semiconductor substrate; a capacitor formed on a sidewall portion at the lower half of said deep hole, the capacitor comprising a storage node disposed inside said deep hole, a sheath type plate electrode, a capacitance insulating film disposed between said storage node and said sheath type plate electrode and an insulating film encompassing said sheath type plate electrode; and a switching transistor formed immediately above said capacitor, the switching transistor having a source and a drain self-aligned to a gate; word lines connected to the gate of said switching transistor of each memory cell for selecting said memory cells, said word lines and said gates being formed integrally with each other, wherein each word line is buried in one of a plurality of elongated recesses formed in a surface of said semiconductor substrate, said recesses being elongated in the same direction as the direction in which said word lines extend; bit lines connected to the drains or sources of said switching transistor of each memory cell for transferring data from said memory cells; and voltage impression means connected to said sheath type plate electrode which impresses a voltage to said sheath type plate electrode which is different from a voltage impressed to said semiconductor substrate.

Claim 14

A semiconductor memory according to claim 11, wherein said memory cells constitute a folded bit line structure and have an amplifier for differentially amplifying data of said bit line.

Claim 15

A semiconductor memory according to claim 11, wherein said voltage impression means comprises a high concentration impurity region disposed at the bottom of said deep hole of each memory cell and having an opposite conductivity type to that of said semiconductor substrate and a wiring layer connected electrically to said high concentration impurity region and extending to the surface portion of said semiconductor substrate.

Claim 16

A semiconductor memory according to claim 11, wherein each said word line is completely buried in one of said elongated recesses, and a substantially flat insulating film is disposed between said bit lines and said word lines.

Claim 17

A semiconductor memory according to claim 11, further including high concentration impurity regions being disposed at the bottom of said deep hole of each memory cell, wherein high concentration impurity regions disposed in at least two adjacent memory cells are arranged to be in contact with each other and wherein at least some of said high concentration impurity regions are arranged so that they do not contact a depletion layer which extends from adjacent high concentration impurity regions.

Claim 18

A semiconductor memory according to claim 15, wherein said word line contains at least polycrystalline silicon and is connected electrically to a word shunt line having lower specific resistance than that of said word line.

Claim 19

A semiconductor memory according to claim 11, further comprising a peripheral circuit of p-channel transistors disposed in n-type well regions and n-channel transistors disposed in p-type well regions.

Claim 20

A semiconductor memory comprising, a semiconductor substrate; a plurality of memory cells, each including a deep hole bored in said semiconductor substrate; a capacitor formed on a sidewall portion at the lower half of said deep hole, the capacitor comprising a storage node disposed inside said deep hole, a sheath type plate electrode, a capacitance insulating film disposed between said storage node and said sheath type plate electrode and an insulating film encompassing said sheath type plate electrode; and a switching transistor formed immediately above said capacitor, the switching transistor having a source and a drain self-aligned to a gate; word lines connected to the gate of said switching transistor of each memory cell for selecting said memory cells, said word lines and said gates being formed integrally with each other, wherein two word lines buried in each one of a plurality of elongated recesses formed in a surface of said semiconductor substrate, said recesses being elongated in the same direction as the direction in which said word lines extend; bit lines connected to the drains or sources of said switching transistor of each memory cell for transferring data from said memory cells; and voltage impression means connected to said sheath type plate electrode which impresses a voltage to said sheath type plate electrode which is different from a voltage impressed to said semiconductor substrate.

Claim 21

A semiconductor memory comprising, a semiconductor substrate; a plurality of memory cells, each including a deep hole bored in said semiconductor substrate; a capacitor formed on a sidewall portion at the lower half of said deep hole, the capacitor comprising a storage node disposed inside said deep hole, a sheath type plate electrode, a capacitance insulating film disposed between said storage node and said sheath type plate electrode and an insulating film encompassing said sheath type plate electrode; and a switching transistor formed immediately above said capacitor, the switching transistor having a source and a drain self-aligned to a gate; word lines connected to the gate of said switching transistor of each memory cell for selecting said memory cells, said word lines and said gates being formed integrally with each other, wherein two word lines buried in each one of a plurality of elongated recesses formed in a surface of said semiconductor substrate, said recesses being elongated in the same direction as the direction in which said word lines extend; bit lines connected to the drains or sources of said switching transistor of each memory cell for transferring data from said memory cells; and voltage impression means connected to said sheath type plate electrode which impresses a voltage to said sheath type plate electrode which is different from a voltage impressed to said semiconductor substrate.

Claim 22

A semiconductor memory according to claim 18, wherein said memory cells constitute a folded bit line structure and have an amplifier for differentially amplifying the data of said bit lines.

Claim 23

A semiconductor memory according to claim 18, wherein said voltage impression means comprises a high concentration impurity region disposed at the bottom of said deep hole of each memory cell and having an opposite conductivity type to that of said semiconductor substrate and a wiring layer connected electrically to said high concentration impurity region and extending to the surface portion of said semiconductor substrate.

Claim 24

A semiconductor memory comprising, a semiconductor substrate; an epitaxial layer formed on said semiconductor substrate; a plurality of memory cells, each including a deep hole bored in said epitaxial layer; a capacitor formed on a sidewall portion at the lower half of said deep hole, the capacitor comprising a storage node disposed inside said deep hole, a sheath type plate electrode, a capacitance insulating film disposed between said storage node and said sheath type plate electrode and an insulating film encompassing said sheath type plate electrode; and a switching transistor formed immediately above said capacitor; word lines for selecting said memory cells, wherein at least half of each word line forms a gate of said switching transistor of each memory cell and is buried in one of a plurality of elongated recesses formed in a surface portion of said epitaxial layer; bit lines for transferring data; and voltage impression means connected to said sheath type plate electrode which impresses a voltage to said sheath type plate electrode which is different from a voltage impressed to said epitaxial layer.

Claim 25

A semiconductor memory comprising, a semiconductor substrate; an epitaxial layer formed on said semiconductor substrate; a plurality of memory cells, each including a deep hole bored in said epitaxial layer; a capacitor formed on a sidewall portion at the lower half of said deep hole, the capacitor comprising a storage node disposed inside said deep hole, a sheath type plate electrode, a capacitance insulating film disposed between said storage node and said sheath type plate electrode and an insulating film encompassing said sheath type plate electrode; and a switching transistor formed immediately above said capacitor; word lines for selecting said memory cells, wherein at least half of each word line forms a gate of said switching transistor of each memory cell and is buried in one of a plurality of elongated recesses formed in a surface portion of said epitaxial layer; bit lines for transferring data; and voltage impression means connected to said sheath type plate electrode which impresses a voltage to said sheath type plate electrode which is different from a voltage impressed to said epitaxial layer.

Claim 26

A semiconductor memory according to claim 21, wherein the portion of each said word line buried in said elongated recess is two word lines.

Claim 27

A semiconductor memory according to claim 21, wherein each said word line is disposed through an insulating film disposed therebelow.

Claim 28

A semiconductor memory according to claim 21, wherein said memory cells constitute a folded bit line structure and have an amplifier for differentially amplifying the data of said bit lines.

Claim 29

A semiconductor memory according to claim 21, wherein said voltage impression means consists of comprises a high concentration impurity region having an opposite conductivity type to that of said epitaxial layer and being disposed at the bottom of said deep hole of each memory cell, and a wiring layer connected electrically to said high concentration impurity region and extending to the surface portion of said epitaxial layer.

Claim 30

A semiconductor memory according to claim 25, wherein said high concentration impurity region is a buried layer disposed between said semiconductor substrate and said epitaxial layer.

Claim 31

A semiconductor memory according to claim 21, wherein each said word line is completely buried in one of said elongated recesses and a substantially flat insulating layer is disposed between said bit lines and said word lines.

Claim 32

A semiconductor memory according to claim 21, further including high concentration impurity regions being disposed at the bottom of said deep hole of each memory cell, wherein high concentration impurity regions disposed in at least two adjacent memory cells are arranged to be in contact with each other and wherein at least some of said high concentration impurity regions are arranged so that they do not contact a depletion layer which extends from adjacent high concentration impurity regions.

Claim 33

A semiconductor memory according to claim 21, wherein said word line contains at least polycrystalline silicon and is connected electrically to a word shunt line having lower specific resistance than that of said word line.

Claim 34

A semiconductor memory according to claim 21, wherein said switching transistor of each memory cell has a source and a drain, self-aligned to said gate of said switching transistor.

Claim 35

A semiconductor memory according to claim 21, further comprising a peripheral circuit of p-channel transistors disposed in n-type well regions and n-channel transistors disposed in p-type well regions.

Claim 36

A semiconductor memory comprising, a semiconductor substrate; an epitaxial layer formed on said semiconductor substrate; a plurality of memory cells, each including a deep hole bored in said epitaxial layer; a capacitor formed on a sidewall portion at the lower half of said deep hole, the capacitor comprising a storage node disposed of said deep hole, a sheath type plate electrode, a capacitance insulating film disposed between said storage node and said sheath type plate electrode and an insulating film encompassing said sheath type plate electrode; and a switching transistor formed immediately above said capacitor, the switching transistor having a source and a drain self-aligned to a gate; word lines connected to the gate of said switching transistor of each memory cell for selecting said memory cells, said word lines and said gates being formed integrally with each other, wherein each word line is buried in one of a plurality of elongated recesses formed in a surface of said epitaxial layer, said recesses being elongated in the same direction as the direction in which said word lines extend; bit lines connected to the drains or sources of said switching transistor of each memory cell for transferring data from said memory cells; and voltage impression means connected to said sheath type plate electrode which impresses a voltage to said sheath type plate electrode which is different from a voltage impressed to said epitaxial layer.

Claim 37

A semiconductor memory comprising, a semiconductor substrate; an epitaxial layer formed on said semiconductor substrate; a plurality of memory cells, each including a deep hole bored in said epitaxial layer; a capacitor formed on a sidewall portion at the lower half of said deep hole, the capacitor comprising a storage node disposed of said deep hole, a sheath type plate electrode, a capacitance insulating film disposed between said storage node and said sheath type plate electrode and an insulating film encompassing said sheath type plate electrode; and a switching transistor formed immediately above said capacitor, the switching transistor having a source and a drain self-aligned to a gate; word lines connected to the gate of said switching transistor of each memory cell for selecting said memory cells, said word lines and said gates being formed integrally with each other, wherein each word line is buried in one of a plurality of elongated recesses formed in a surface of said epitaxial layer, said recesses being elongated in the same direction as the direction in which said word lines extend; bit lines connected to the drains or sources of said switching transistor of each memory cell for transferring data from said memory cells; and voltage impression means connected to said sheath type plate electrode which impresses a voltage to said sheath type plate electrode which is different from a voltage impressed to said epitaxial layer.

Claim 38

A semiconductor memory according to claim 32, wherein said memory cells constitute a folded bit line structure and have an amplifier for differentially amplifying data of said bit lines.

Claim 39

A semiconductor memory according to claim 32, wherein said voltage impression means comprises a high concentration impurity region disposed at the bottom of said deep hole of each memory cell and having an opposite conductivity type to that of said epitaxial layer and a wiring layer connected electrically to said high concentration impurity region and extending to the surface portion of said epitaxial layer.

Claim 40

A semiconductor memory according to claim 34, wherein said high concentration impurity region is a buried layer disposed between said semiconductor substrate and said epitaxial layer.

Claim 41

A semiconductor memory according to claim 32, wherein each said word line is completely buried in one of said elongated recesses, and a substantially flat insulating film is disposed between said bit lines and said word lines.

Claim 42

A semiconductor memory according to claim 32, further including high concentration impurity regions being disposed at the bottom of said deep hole of each memory cell, wherein high concentration impurity regions disposed in at least two adjacent memory cells are arranged to be in contact with each other and wherein at least some of said high concentration impurity regions are arranged so that they do not contact a depletion layer which extends from adjacent high concentration impurity regions.

Claim 43

A semiconductor memory according to claim 32, wherein said word line contains at least polycrystalline silicon and is connected electrically to a word shunt line having lower specific resistance than that of said word line.

Claim 44

A semiconductor memory according to claim 32, further comprising a peripheral circuit of p-channel transistors disposed in n-type well regions and n-channel transistors disposed in p-type well regions.

Claim 45

A semiconductor memory comprising, a semiconductor substrate; an epitaxial layer formed on said semiconductor substrate; a plurality of memory cells, each including a deep hole bored in said epitaxial layer; a capacitor formed on a sidewall portion at the lower half of said deep hole, the capacitor comprising a storage node disposed inside said deep hole, a sheath type plate electrode, a capacitance insulating film disposed between said storage node and said sheath type plate electrode and an insulating film encompassing said sheath type plate electrode; and a switching transistor formed immediately above said capacitor, the switching transistor having a source and a drain self-aligned to a gate; word lines connected to the gate of said switching transistor of each memory cell for selecting said memory cells, said word lines and said gates being formed integrally with each other, wherein two word lines buried in each one of a plurality of elongated recesses formed in a surface of said epitaxial layer, said recesses being elongated in the same direction as the direction in which said word lines extend; bit lines connected to the drains of sources of said switching transistor of each memory cell for transferring data from said memory cells; and voltage impression means connected to said sheath type plate electrode which impresses a voltage to said sheath type plate electrode which is different from a voltage impressed to said epitaxial layer.

Claim 46

A semiconductor memory comprising, a semiconductor substrate; an epitaxial layer formed on said semiconductor substrate; a plurality of memory cells, each including a deep hole bored in said epitaxial layer; a capacitor formed on a sidewall portion at the lower half of said deep hole, the capacitor comprising a storage node disposed inside said deep hole, a sheath type plate electrode, a capacitance insulating film disposed between said storage node and said sheath type plate electrode and an insulating film encompassing said sheath type plate electrode; and a switching transistor formed immediately above said capacitor, the switching transistor having a source and a drain self-aligned to a gate; word lines connected to the gate of said switching transistor of each memory cell for selecting said memory cells, said word lines and said gates being formed integrally with each other, wherein two word lines buried in each one of a plurality of elongated recesses formed in a surface of said epitaxial layer, said recesses being elongated in the same direction as the direction in which said word lines extend; bit lines connected to the drains of sources of said switching transistor of each memory cell for transferring data from said memory cells; and voltage impression means connected to said sheath type plate electrode which impresses a voltage to said sheath type plate electrode which is different from a voltage impressed to said epitaxial layer.

Claim 47

A semiconductor memory according to claim 40, wherein said memory cells constitute a folded bit line structure and have an amplifier for differentially amplifying the data of said bit lines.

Claim 48

A semiconductor memory according to claim 40, wherein said voltage impression means comprises a high concentration impurity region disposed at the bottom of said deep hole of each memory cell and having an opposite conductivity type to that of said epitaxial layer and a wiring layer connected electrically to said high concentration impurity region and extending to the surface portion of said epitaxial layer.