US6060795A
Expired / Lapsed
US
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Semiconductor power pack
Assignee: Fairchild Semiconductor Corp
•
Filing: 1998-03-18
•
Granted: 2000-05-09
•
Expires: 2018-03-18
Abstract
Abstract A power pack for providing power electronics at high temperature with high dI/dt, current, and voltage capability. The power pack having three layers. A top layer for providing: a matching composite Coefficient of Thermal Expansion (CTE) between power device materials and power electrodes, thermal cooling, and electrical conduction paths. The top layer may have interface circuitry for driving and controlling on-board power semiconductor devices. The top layer may also include traces and pads for the attachment of a gate, a gate return, and terminals. A middle layer may be a power semiconductor device providing control of the current flow. The bottom layer may be a rigid base plate for providing structural rigidity or may provide an electric and thermal path for the power semiconductor device. The power pack also includes a thermal shim which provides a thermal path to dissipate heat generated by the interface circuitry. The power pack may also include a snubber circuit.
Inventors
- 👤 James K. Azotea
- 👤 Steve Arthur
- 👤 Homer Glascock
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-02 21:14
CPC Classifications
H; H02; H02M; H02M7/00; H02M7/003; H10; H10W; H10W40/00; H10W40/20; H10W40/22; H10W40/70; H10W72/00; H10W90/00; H10W72/90; H10W72/921; H10W72/926
Claims Analysis
Total Claims: 98
Claim 1
Independent Claim
77 words
A thin power pack of the type having a flat power semiconductor device as a main switch and a thermal management system for providing at least two device cooling paths in opposing directions for the power semiconductor device, the improvement comprising a circuit permanently positioned in said power pack for driving said power semiconductor device, said circuit being thermally isolated from said power semiconductor device and having a circuit cooling path parallel to said device cooling paths.
Claim 2
Dependent Claim
77 words
A thin power pack of the type having a flat power semiconductor device as a main switch and a thermal management system for providing at least two device cooling paths in opposing directions for the power semiconductor device, the improvement comprising a circuit permanently positioned in said power pack for driving said power semiconductor device, said circuit being thermally isolated from said power semiconductor device and having a circuit cooling path parallel to said device cooling paths.
Claim 3
Dependent Claim
22 words
The thin power pack of claim 1, wherein the power pack has large flat surfaces for stacking and for optimum thermal flow.
Claim 4
Dependent Claim
20 words
The thin power pack of claim 1, wherein the device cooling paths and circuit cooling path have low thermal resistance.
Claim 5
Dependent Claim
18 words
The thin power pack of claim 1, wherein the device and circuit cooling paths are comprised of ceramic.
Claim 6
Dependent Claim
23 words
The thin power pack of claim 1, wherein the circuit comprises an interface circuit for receiving and implementing power semiconductor device control commands.
Claim 7
Dependent Claim
19 words
The thin power pack of claim 1, wherein the power semiconductor device is hermetically sealed in the power pack.
Claim 8
Dependent Claim
19 words
The thin power pack of claim 1, wherein the circuit further comprises a thick resistive film for circuit connections.
Claim 9
Dependent Claim
105 words
A universal power pack for controlling the flow of energy comprising: a power semiconductor device for manipulating energy flow characteristics; a drive circuit for said power semiconductor device, said drive circuit thermally insulated from said power semiconductor device; a control circuit for controlling said drive circuit and for receiving simple commands; a power semiconductor device thermal management means for providing a first set of cooling paths for said power semiconductor device; and a drive circuit thermal management means for providing a second set of cooling paths for said drive circuit, said second set of cooling paths being parallel to said first set of cooling paths.
Claim 10
Dependent Claim
105 words
A universal power pack for controlling the flow of energy comprising: a power semiconductor device for manipulating energy flow characteristics; a drive circuit for said power semiconductor device, said drive circuit thermally insulated from said power semiconductor device; a control circuit for controlling said drive circuit and for receiving simple commands; a power semiconductor device thermal management means for providing a first set of cooling paths for said power semiconductor device; and a drive circuit thermal management means for providing a second set of cooling paths for said drive circuit, said second set of cooling paths being parallel to said first set of cooling paths.
Claim 11
Dependent Claim
18 words
The universal power pack of claim 8, wherein said power semiconductor device is hermetically sealed in said pack.
Claim 12
Dependent Claim
21 words
The universal power pack of claim 8, wherein said power semiconductor device and drive circuit thermal management means are hermetically sealed.
Claim 13
Dependent Claim
39 words
The universal power pack of claim 8, further comprising one or more power semiconductor devices, each device having a corresponding drive circuit, control circuit, power semiconductor device thermal management means, and drive circuit thermal management means within said pack.
Claim 14
Dependent Claim
12 words
The universal power pack of claim 8, wherein each device operates independently.
Claim 15
Dependent Claim
28 words
The universal power pack of claim 8, wherein each control circuit and device has a separate path for the flow of energy and for receiving simple control commands.
Claim 16
Dependent Claim
55 words
A stackable power module of the type having a power semiconductor switch for high speed switching at high temperatures and having a first set of cooling paths, the improvement comprising semiconductor circuitry in said module for driving said power semiconductor switch, said circuitry having a cooling path parallel to said first set of cooling paths.
Claim 17
Dependent Claim
55 words
A stackable power module of the type having a power semiconductor switch for high speed switching at high temperatures and having a first set of cooling paths, the improvement comprising semiconductor circuitry in said module for driving said power semiconductor switch, said circuitry having a cooling path parallel to said first set of cooling paths.
Claim 18
Dependent Claim
19 words
The stackable power module of claim 14, wherein said cooling path for said driver circuitry comprises a thermal shim.
Claim 19
Dependent Claim
29 words
The stackable power module of claim 14, further comprising a lid for said switch, wherein said circuitry and said shim are mounted on directly opposing sides of said lid.
Claim 20
Dependent Claim
14 words
The stackable power module of claim 16, wherein said lid comprises a ceramic substrate.
Claim 21
Dependent Claim
16 words
The stackable power module of claim 16, wherein said lid is a high temperature circuit board.
Claim 22
Dependent Claim
20 words
The stackable power module of claim 16, wherein said lid comprises feedthrough holes for connecting said circuitry to said switch.
Claim 23
Dependent Claim
20 words
The stackable power module of claim 16, wherein the coefficient of thermal expansion of said plate and lid are matching.
Claim 24
Dependent Claim
25 words
The stackable power module of claim 16, further comprising a base plate, said plate and lid forming a sandwich surrounding said shim and said switch.
Claim 25
Dependent Claim
18 words
The stackable power module of claim 21, wherein said plate is in contact with said power semiconductor switch.
Claim 26
Dependent Claim
31 words
The stackable power module of claim 16, further comprising a second lid as a base plate, said second lid and first lid forming a sandwich surrounding said shim and said switch.
Claim 27
Dependent Claim
12 words
The stackable power module of claim 16, further comprising a stripline connecter.
Claim 28
Dependent Claim
20 words
The stackable power module of claim 14, wherein the power semiconductor switch is hermetically sealed in the stackable power module.
Claim 29
Dependent Claim
79 words
A high speed switching power pack comprising a power semiconductor switch, a driver for the power semiconductor switch, a metalized and patterned ceramic lid, said power semiconductor switch and driver positioned on opposite sides of said lid, a base plate for encasing said power semiconductor switch in a sandwich between the plate and the lid, and a thermal conduit positioned within the sandwich and in contact with the lid and plate for providing a cooling path for the driver.
Claim 30
Dependent Claim
79 words
A high speed switching power pack comprising a power semiconductor switch, a driver for the power semiconductor switch, a metalized and patterned ceramic lid, said power semiconductor switch and driver positioned on opposite sides of said lid, a base plate for encasing said power semiconductor switch in a sandwich between the plate and the lid, and a thermal conduit positioned within the sandwich and in contact with the lid and plate for providing a cooling path for the driver.
Claim 31
Dependent Claim
19 words
The high speed switching power pack of claim 26, wherein said plate, lid, and conduit have low thermal resistance.
Claim 32
Dependent Claim
18 words
The high speed switching power pack of claim 26, wherein said lid is a high temperature circuit board.
Claim 33
Dependent Claim
24 words
The high speed switching power pack of claim 26, wherein said plate and said lid each provide a separate cooling path for said switch.
Claim 34
Dependent Claim
23 words
The high speed switching power pack of claim 26, wherein said thermal conduit provides a cooling path to said plate for said driver.
Claim 35
Dependent Claim
24 words
The high speed switching power pack of claim 26, wherein said switch is mounted on said lid and is in contact with said plate.
Claim 36
Dependent Claim
24 words
The high speed switching power pack of claim 31, wherein said plate and lid have matching coefficients of thermal expansion to the power semiconductor.
Claim 37
Dependent Claim
24 words
The high speed switching power pack of claim 26, wherein said lid comprises hermetically sealed feedthrough paths for connecting said switch to said driver.
Claim 38
Dependent Claim
137 words
A power pack of the type having a power semiconductor switch, a base plate for mounting the switch, a lid for sealing an area including said switch between the lid and the plate and for providing switch interconnect paths, the switch having the lid as a first cooling path and the base as a second cooling path, the improvement comprising an integrated circuit for driving the switch, said integrated circuit mounted on an area of the lid outside of the area sealed between the lid and the plate, and a thermal shim positioned inside the area sealed between the lid and the plate, said shim being in contact with the plate and with the lid in an area opposite to the integrated circuit, the thermal shim providing a cooling path to the plate for the integrated circuit.
Claim 39
Dependent Claim
137 words
A power pack of the type having a power semiconductor switch, a base plate for mounting the switch, a lid for sealing an area including said switch between the lid and the plate and for providing switch interconnect paths, the switch having the lid as a first cooling path and the base as a second cooling path, the improvement comprising an integrated circuit for driving the switch, said integrated circuit mounted on an area of the lid outside of the area sealed between the lid and the plate, and a thermal shim positioned inside the area sealed between the lid and the plate, said shim being in contact with the plate and with the lid in an area opposite to the integrated circuit, the thermal shim providing a cooling path to the plate for the integrated circuit.
Claim 40
Dependent Claim
11 words
The power pack of claim 34, wherein said pack is hermetic.
Claim 41
Dependent Claim
15 words
The power pack of claim 34, wherein said lid is a high temperature circuit board.
Claim 42
Dependent Claim
17 words
The power pack of claim 34, wherein said lid is comprised of a copper patterned ceramic substrate.
Claim 43
Dependent Claim
15 words
The power pack of claim 34, wherein said plate is comprised of a copper-molybdenum-copper composite.
Claim 44
Dependent Claim
21 words
The power pack of claim 34, wherein said plate is comprised of a material matching the expansion coefficient of said lid.
Claim 45
Dependent Claim
22 words
The power pack of claim 34, wherein said lid comprises feedthrough holes for connecting said power semiconductor switch to said integrated circuit.
Claim 46
Dependent Claim
23 words
The power pack of claim 40, wherein said power semiconductor switch and thermal shim are hermetically sealed between said lid and said plate.
Claim 47
Dependent Claim
117 words
A stackable thin power pack of the type having a power semiconductor device for controlling the flow of electrical energy, a base plate, and a ceramic lid having metalized paths for connecting the pack to external equipment, the device being sealed in between the base plate and the lid, the improvement comprising a high frequency and high power integrated circuit for driving the power semiconductor device, the integrated circuit positioned on said lid opposite to said device and connected to the device through metalized paths, a thermal shim sealed in between the lid and base plate, the shim physically isolated from the device, and the shim providing a cooling path to the plate for the integrated circuit.
Claim 48
Dependent Claim
117 words
A stackable thin power pack of the type having a power semiconductor device for controlling the flow of electrical energy, a base plate, and a ceramic lid having metalized paths for connecting the pack to external equipment, the device being sealed in between the base plate and the lid, the improvement comprising a high frequency and high power integrated circuit for driving the power semiconductor device, the integrated circuit positioned on said lid opposite to said device and connected to the device through metalized paths, a thermal shim sealed in between the lid and base plate, the shim physically isolated from the device, and the shim providing a cooling path to the plate for the integrated circuit.
Claim 49
Dependent Claim
24 words
The stackable thin power pack of claim 42, wherein the lid and the plate each provide a cooling path for the power semiconductor device.
Claim 50
Dependent Claim
27 words
The stackable thin power pack of claim 43, wherein the cooling paths for the power semiconductor device are parallel to the cooling path for the integrated circuit.
Claim 51
Dependent Claim
15 words
The stackable thin power pack of claim 42, wherein the metalized paths are solder plugged.
Claim 52
Dependent Claim
23 words
The stackable thin power pack of claim 42, wherein the plate is comprised of a material matching the expansion coefficient of the lid.
Claim 53
Dependent Claim
17 words
The stackable thin power module of claim 42, wherein the lid is a high temperature circuit board.
Claim 54
Independent Claim
152 words
A method of manufacturing a flat power pack having a power semiconductor device, base plate, lid, and thermal shim comprising the steps of: (a) forming a metalized and patterned path through the lid; (b) providing circuitry for interfacing with the semiconductor device; (c) affixing interface circuitry to the lid; (d) forming alignment areas in the base plate for holding the thermal shim and power semiconductor device; (e) soldering metal under the power semiconductor device 10 and the thermal shim 12; (f) positioning both solder tinned power semiconductor device and thermal shim in alignment areas; (g) assembling the power pack by aligning and stacking the lid with the base plate by the interface circuitry aligned with the thermal shim and the metalized path aligned and in contact with the power semiconductor device; (h) slide the assembled module on a hot plate; and (i) slide the heated assembly off the hot plate for cooling.
Claim 55
Independent Claim
152 words
A method of manufacturing a flat power pack having a power semiconductor device, base plate, lid, and thermal shim comprising the steps of: (a) forming a metalized and patterned path through the lid; (b) providing circuitry for interfacing with the semiconductor device; (c) affixing interface circuitry to the lid; (d) forming alignment areas in the base plate for holding the thermal shim and power semiconductor device; (e) soldering metal under the power semiconductor device 10 and the thermal shim 12; (f) positioning both solder tinned power semiconductor device and thermal shim in alignment areas; (g) assembling the power pack by aligning and stacking the lid with the base plate by the interface circuitry aligned with the thermal shim and the metalized path aligned and in contact with the power semiconductor device; (h) slide the assembled module on a hot plate; and (i) slide the heated assembly off the hot plate for cooling.
Claim 56
Dependent Claim
71 words
The method of claim 48, wherein the step of forming a metalized and patterned path through the lid comprises the steps of: (a) providing an oxide ceramic substrate; (b) depositing metal on the ceramic substrate by electroless plating; (c) depositing metal on the electroless plated metal using electroplating; (d) forming gas release openings on the electroplated metal to prevent blistering; and (e) process the substrate with a direct bond copper profile.
Claim 57
Dependent Claim
101 words
A power pack for high speed high temperature power electronics comprising: a flat power semiconductor device for switching power current; a flat top lid made of a low thermal resistance material, said lid having metalized holes and metalized upper and lower surfaces for channeling power current during power pack operation; and a flat bottom plate having an electrical path for the power semiconductor device, said device being bonded directly to the lower surface of the lid and the upper surface of the base plate, the lid, device, and plate forming a three layer stack with the device as the middle layer.
Claim 58
Dependent Claim
101 words
A power pack for high speed high temperature power electronics comprising: a flat power semiconductor device for switching power current; a flat top lid made of a low thermal resistance material, said lid having metalized holes and metalized upper and lower surfaces for channeling power current during power pack operation; and a flat bottom plate having an electrical path for the power semiconductor device, said device being bonded directly to the lower surface of the lid and the upper surface of the base plate, the lid, device, and plate forming a three layer stack with the device as the middle layer.
Claim 59
Dependent Claim
21 words
The power pack of claim 50, wherein the flat top lid comprises a gate return path to the power semiconductor device.
Claim 60
Dependent Claim
21 words
The power pack of claim 50, wherein the flat top lid comprises a voltage measurement path to the power semiconductor device.
Claim 61
Dependent Claim
18 words
The power pack of claim 50, wherein the power pack is connected to external equipment with flat cables.
Claim 62
Dependent Claim
15 words
The power pack of claim 50, wherein the power pack includes a stripline connection path.
Claim 63
Dependent Claim
19 words
The power pack of claim 50, wherein the power semiconductor device is hermetically sealed between the lid and plate.
Claim 64
Dependent Claim
19 words
The power pack of claim 50, wherein the metalized holes are positioned to minimize mutual inductance and minimize resistance.
Claim 65
Dependent Claim
28 words
The power pack of claim 50, wherein the diameter of the metalized holes are formed and the distance between the holes minimize the lid's mutual inductance and resistance.
Claim 66
Dependent Claim
17 words
The power pack of claim 50, wherein the metalized holes are solder plugged providing lower lid resistance.
Claim 67
Dependent Claim
20 words
The power pack of claim 50, wherein the power pack is stacked with a second power pack with facing lids.
Claim 68
Dependent Claim
50 words
The power pack of claim 50, further comprising a stripline connection path for both the flat top lid and the flat bottom plate and wherein the flat top lid and the flat bottom plate each have a wide surface and a small thickness for reducing inductance during power pack operation.
Claim 69
Dependent Claim
10 words
The power pack of claim 50, further comprising a snubber.
Claim 70
Dependent Claim
16 words
The power pack of claim 61, wherein the snubber is integrated with the power semiconductor device.
Claim 71
Dependent Claim
10 words
The power pack of claim 61, further comprising a resistor.
Claim 72
Dependent Claim
32 words
The power pack of claim 63, further comprising a material positioned between the flat top lid and the flat bottom lid providing a thermal dissipation and electrical conduction path for the resistor.
Claim 73
Dependent Claim
25 words
The power pack of claim 63, wherein the resistor is formed using a thick film, a thick film trace, or a discrete thick film resistor.
Claim 74
Dependent Claim
22 words
The power pack of claim 61, wherein the power semiconductor device and snubber are hermetically sealed between the lid and the plate.
Claim 75
Dependent Claim
71 words
The power pack of claim 50, further comprising a first flat stripline current conduction path to the flat top lid, a second flat stripline current conduction path to the flat bottom plate, the metalized holes providing a first feedthrough current conduction path through the flat top lid to the flat power semiconductor device, and a second feedthrough current conduction path through the flat bottom plate to the flat power semiconductor device.
Claim 76
Dependent Claim
16 words
The power pack of claim 67, wherein the second feedthrough current conduction path comprises metalized holes.
Claim 77
Dependent Claim
38 words
The power pack of claim 68, wherein the first stripline current conduction path is connected to the first feedthrough current conduction path and the second stripline current conduction path is connected to the second feedthrough current conduction path.
Claim 78
Dependent Claim
25 words
The power pack of claim 69, wherein the current through all of the conduction path minimizes the self and mutual inductance of the power pack.
Claim 79
Dependent Claim
63 words
The power pack of claim 70, wherein current through the first stripline current conduction path flows in a direction directly opposite to current through the second stripline current conduction path and current through the first and second feedthrough conduction paths flows perpendicular to current through the first and second stripline conduction paths to minimize the self and mutual inductance of the power pack.
Claim 80
Dependent Claim
16 words
The power pack of claim 51 further comprising a gate path to the power semiconductor device.
Claim 81
Dependent Claim
20 words
The power pack of claim 51 further comprising a passive damping resistor in the gate return path for dissipating power.
Claim 82
Dependent Claim
19 words
The power pack of claim 72 further comprising a passive damping resistor in the gate path for dissipating power.
Claim 83
Dependent Claim
38 words
The power pack of claim 73, wherein the passive damping resistor is formed using a thick film, a thick film trace or a discrete thick film resistor so as to have a surface area sufficient for dissipating power.
Claim 84
Dependent Claim
38 words
The power pack of claim 74, wherein the passive damping resistor is formed using a thick film, a thick film trace or a discrete thick film resistor so as to have a surface area sufficient for dissipating power.
Claim 85
Dependent Claim
30 words
The power pack of claim 50 wherein a frame is positioned around the power semiconductor device and in between the lid and plate for hermetically sealing the power semiconductor device.
Claim 86
Dependent Claim
30 words
The power pack of claim 77 wherein a first flat plate is affixed to the flat top lid and a second flat plate is affixed to the flat bottom plate.
Claim 87
Dependent Claim
15 words
The power pack of claim 77 wherein the first and second plates are electrically conductive.
Claim 88
Dependent Claim
41 words
A power module for converting available electric power to required voltage and current values comprising a plurality of thin flat power packs stacked and aligned, each of the flat power packs having paths to allow combined operation of the power packs.
Claim 89
Dependent Claim
41 words
A power module for converting available electric power to required voltage and current values comprising a plurality of thin flat power packs stacked and aligned, each of the flat power packs having paths to allow combined operation of the power packs.
Claim 90
Dependent Claim
20 words
The power module of claim 80, further comprising stripline connectors for providing an electric power path to the power packs.
Claim 91
Dependent Claim
18 words
The power module of claim 80, wherein each power pack comprises a gate return to bypass gate inductance.
Claim 92
Dependent Claim
13 words
The power module of claim 80, wherein the power packs are hermetically sealed.
Claim 93
Dependent Claim
11 words
The power module of claim 80, further comprising a heat sink.
Claim 94
Dependent Claim
14 words
The power module of claim 80, wherein each power pack includes a driver circuit.
Claim 95
Dependent Claim
14 words
The power module of claim 80, wherein each power pack includes an interface circuit.
Claim 96
Dependent Claim
47 words
The power module of claim 80 wherein each thin flat power pack comprises a flat lid having a top and a bottom surface and each thin flat power pack comprising a power semiconductor device attached to the bottom of the lid which is controlled using a gate.
Claim 97
Dependent Claim
27 words
The power module of claim 87 wherein each power pack comprises a gate return to the bottom of the lid to bypass series inductance of the gate.
Claim 98
Dependent Claim
37 words
The power module of claim 87, wherein each power pack comprises a gate reference to the top of the lid and uses a stripline connection to each lid to reduce series gate inductance for each power pack.
References Cited (Backward Citations)
US5003370A
Cited
US4710795A
Cited
US4731644A
Cited
US4839717A
Cited
US5016138A
Cited
US5166773A
Cited
US5702985A
Cited
US5574312A
Cited
US5726466A
Cited
US5768104A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2003-05-09 | 2003-11-08 | 2004-05-09 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2007-05-09 | 2007-11-08 | 2008-05-09 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2011-05-09 | 2011-11-08 | 2012-05-09 | $7700.00 | Window Closed / Lapsed |