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US6060766A
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Protection of hydrogen sensitive regions in semiconductor devices from the positive charge associated with plasma deposited barriers or layers
Assignee: Advanced Micro Devices Inc
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Filing: 1997-08-25
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Granted: 2000-05-09
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Expires: 2017-08-25
Abstract
Abstract A semiconductor device with first and second types of devices formed in a semiconductor substrate with a barrier layer formed over the surface of the semiconductor device including over the first and second types of devices with the barrier layer removed from over the first type of device. The first type of device is a positive charge sensitive device such as a nonvolatile memory device. The semiconductor device has a hydrogen getter layer formed under the barrier layer.
Inventors
- 👤 Sunil D. Mehta
- 👤 William G. En
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 03:43
CPC Classifications
H; H10; H10D; H10D30/00; H10D30/01; H10D30/021; H10D30/0411; H10W; H10W20/00; H10W20/40; H10W76/00; H10W76/40; H10W76/42; H10W76/48
Claims Analysis
Total Claims: 2
Claim 1
Independent Claim
144 words
A semiconductor device, comprising: a semiconductor substrate; a first type of device formed in a first portion of the semiconductor device; at least a second type of device formed in a second portion of the semiconductor substrate; a hydrogen getter layer having a thickness of approximately 1000-2000 Angstroms formed on a surface of the semiconductor device including over the first and second type of device, wherein the hydrogen getter layer is formed from a material selected from the group of a PSG film, a BPSG film, a PTEOS deposited oxide film and a BPTEOS deposited film; a barrier layer formed on a surface of the hydrogen getter layer, wherein the barrier layer is formed from a material selected from the group of a nitride and oxynitride film; and wherein a portion of the barrier layer is removed from over the first type of device.
Claim 2
Dependent Claim
144 words
A semiconductor device, comprising: a semiconductor substrate; a first type of device formed in a first portion of the semiconductor device; at least a second type of device formed in a second portion of the semiconductor substrate; a hydrogen getter layer having a thickness of approximately 1000-2000 Angstroms formed on a surface of the semiconductor device including over the first and second type of device, wherein the hydrogen getter layer is formed from a material selected from the group of a PSG film, a BPSG film, a PTEOS deposited oxide film and a BPTEOS deposited film; a barrier layer formed on a surface of the hydrogen getter layer, wherein the barrier layer is formed from a material selected from the group of a nitride and oxynitride film; and wherein a portion of the barrier layer is removed from over the first type of device.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2003-05-09 | 2003-11-08 | 2004-05-09 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2007-05-09 | 2007-11-08 | 2008-05-09 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2011-05-09 | 2011-11-08 | 2012-05-09 | $7700.00 | Window Closed / Lapsed |