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US6057584A
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Semiconductor device having a tri-layer gate insulating dielectric
Assignee: GlobalFoundries Inc
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Filing: 1997-12-19
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Granted: 2000-05-02
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Expires: 2017-12-19
Abstract
Abstract A semiconductor device having a gate insulating tri-layer includes a substrate, a nitrogen-containing layer disposed on the substrate, a first dielectric layer disposed over the nitrogen containing layer, a second dielectric layer disposed over the first dielectric layer, and a gate electrode disposed over the second dielectric layer. One of the first and second dielectric layers is formed using an oxide having a dielectric constant ranging from 4 to 100 and the other of the first and second dielectric layers is formed using an oxide having a higher dielectric constant ranging from 10 to 10,000.
Inventors
- 👤 Mark I. Gardner
- 👤 Mark C. Gilmer
- 👤 H. Jim Fulford
- 👤 Jack C. Lee
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 02:06
CPC Classifications
H; H10; H10D; H10D64/00; H10D64/01; H10D64/013; H10D64/01302; H10D64/01332; H10D64/01336; H10D64/0134; H10D30/00; H10D30/01; H10D30/021; H10D30/0223; H10D30/0225; H10D64/01342; H10D64/01344; H10D64/60; H10D64/66; H10D64/68; H10D64/681; H10D64/685; H10D64/691; H10D64/693; H10D64/01348; H10D64/0135
Claims Analysis
Total Claims: 26
Claim 1
Independent Claim
88 words
A semiconductor device, comprising: a substrate; a nitrogen-containing layer disposed on the substrate; a first dielectric layer disposed over the nitrogen containing layer; a second dielectric layer disposed over the first dielectric layer; and a gate electrode disposed over the second dielectric layer; wherein one of the first and second dielectric layers comprises titanium dioxide having a dielectric constant ranging from 4 to 100 and the other of the first and second dielectric layers comprises a second oxide having a higher dielectric constant ranging from 10 to 10,000.
Claim 2
Dependent Claim
88 words
A semiconductor device, comprising: a substrate; a nitrogen-containing layer disposed on the substrate; a first dielectric layer disposed over the nitrogen containing layer; a second dielectric layer disposed over the first dielectric layer; and a gate electrode disposed over the second dielectric layer; wherein one of the first and second dielectric layers comprises titanium dioxide having a dielectric constant ranging from 4 to 100 and the other of the first and second dielectric layers comprises a second oxide having a higher dielectric constant ranging from 10 to 10,000.
Claim 3
Dependent Claim
23 words
The semiconductor device of claim 1, wherein the first dielectric layer comprises the oxide having the dielectric constant ranging from 4 to 100.
Claim 4
Dependent Claim
23 words
The semiconductor device of claim 1, wherein the second dielectric layer comprises the oxide having the dielectric constant ranging from 4 to 100.
Claim 5
Dependent Claim
20 words
The semiconductor device of claim 1, wherein the first dielectric layer and the second dielectric layer have different grain structures.
Claim 6
Dependent Claim
17 words
The semiconductor device of claim 1, the oxide having the higher dielectric constant is barium strontium titanate.
Claim 7
Dependent Claim
19 words
The semiconductor device of claim 1, wherein the first oxide has a dielectric constant ranging from 10 to 100.
Claim 8
Dependent Claim
36 words
The semiconductor device of claim 1, wherein the combined first and second dielectric layers have a capacitance that is equal to a capacitance of a silicon dioxide layer having a thickness of 5 to 10 angstroms.
Claim 9
Dependent Claim
37 words
The semiconductor device of claim 1, wherein each of the first and second dielectric layers has a capacitance that is equal to a capacitance of a silicon dioxide layer having a thickness of 2 to 5 angstroms.
Claim 10
Dependent Claim
12 words
The semiconductor device of claim 1, wherein the gate electrode comprises polysilicon.
Claim 11
Dependent Claim
13 words
The semiconductor device of claim 1, wherein the gate electrode comprises a metal.
Claim 12
Dependent Claim
22 words
The semiconductor device of claim 10, wherein the metal is selected from the group consisting of iridium, titanium, cobalt, or mixtures thereof.
Claim 13
Dependent Claim
20 words
The semiconductor device of claim 1, wherein the nitrogen containing layer has a thickness ranging from 5 to 10 angstroms.
Claim 14
Dependent Claim
18 words
The semiconductor device of claim 1, wherein the second oxide has a dielectric constant of at least 40.
Claim 15
Dependent Claim
25 words
The semiconductor device of claim 1, wherein the nitrogen-containing layer comprises a nitrogen-containing compound selected from the group consisting of silicon nitride and silicon oxynitride.
Claim 16
Dependent Claim
36 words
The semiconductor device of claim 1, wherein the second oxide comprises an oxide selected from the group consisting of barium strontium titanate tantalum oxide, lead zirconate titanate, lead zinc niobate, lead scandium tantalate, and manganese oxide.
Claim 17
Dependent Claim
18 words
The semiconductor device of claim 1, wherein the nitrogen containing layer has a thickness ranging from 50-100 angstroms.
Claim 18
Dependent Claim
45 words
A semiconductor device, comprising: a substrate; a nitrogen-containing layer disposed on the substrate; a titanium dioxide layer disposed over the nitrogen containing layer; a barium strontium titanate layer disposed over the titanium dioxide layer; and a gate electrode disposed on the barium strontium titanate layer.
Claim 19
Dependent Claim
45 words
A semiconductor device, comprising: a substrate; a nitrogen-containing layer disposed on the substrate; a titanium dioxide layer disposed over the nitrogen containing layer; a barium strontium titanate layer disposed over the titanium dioxide layer; and a gate electrode disposed on the barium strontium titanate layer.
Claim 20
Dependent Claim
107 words
A semiconductor device, comprising: a substrate; a nitrogen-containing layer disposed on the substrate; a first dielectric layer disposed over the nitrogen containing layer; a second dielectric layer disposed over the first dielectric layer; and a gate electrode disposed over the second dielectric layer; wherein one of the first and second dielectric layers comprises a first oxide having a dielectric constant ranging from 4 to 100 and a thickness ranging from 3 to 125 angstroms and the other of the first and second dielectric layers comprises a second oxide having a higher dielectric constant ranging from 10 to 10,000 and a thickness ranging from 20 to 500 angstroms.
Claim 21
Dependent Claim
107 words
A semiconductor device, comprising: a substrate; a nitrogen-containing layer disposed on the substrate; a first dielectric layer disposed over the nitrogen containing layer; a second dielectric layer disposed over the first dielectric layer; and a gate electrode disposed over the second dielectric layer; wherein one of the first and second dielectric layers comprises a first oxide having a dielectric constant ranging from 4 to 100 and a thickness ranging from 3 to 125 angstroms and the other of the first and second dielectric layers comprises a second oxide having a higher dielectric constant ranging from 10 to 10,000 and a thickness ranging from 20 to 500 angstroms.
Claim 22
Dependent Claim
30 words
The semiconductor device of claim 18, wherein the one of the first and second dielectric layers that comprises the first oxide has a thickness ranging from 5 to 125 angstroms.
Claim 23
Dependent Claim
30 words
The semiconductor device of claim 18, wherein the other of the first and second dielectric layers that comprises the second oxide has a thickness ranging from 50 to 500 angstroms.
Claim 24
Dependent Claim
97 words
A semiconductor device, comprising: a substrate; a nitrogen-containing layer having a thickness of 5 to 10 angstroms disposed on the substrate; a first dielectric layer disposed over the nitrogen containing layer; a second dielectric layer disposed over the first dielectric layer; and a gate electrode disposed over the second dielectric layer; wherein one of the first and second dielectric layers comprises a first oxide having a dielectric constant ranging from 4 to 100 and the other of the first and second dielectric layers comprises a second oxide having a higher dielectric constant ranging from 10 to 10,000.
Claim 25
Dependent Claim
97 words
A semiconductor device, comprising: a substrate; a nitrogen-containing layer having a thickness of 5 to 10 angstroms disposed on the substrate; a first dielectric layer disposed over the nitrogen containing layer; a second dielectric layer disposed over the first dielectric layer; and a gate electrode disposed over the second dielectric layer; wherein one of the first and second dielectric layers comprises a first oxide having a dielectric constant ranging from 4 to 100 and the other of the first and second dielectric layers comprises a second oxide having a higher dielectric constant ranging from 10 to 10,000.
Claim 26
Dependent Claim
19 words
The semiconductor device of claim 1, wherein the second oxide has a dielectric constant ranging from 20 to 200.
References Cited (Backward Citations)
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