Patent US6054380A successfully refreshed from Google Patents.
US6054380A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method and apparatus for integrating low dielectric constant materials into a multilevel metallization and interconnect structure
Assignee: Applied Materials Inc
•
Filing: 1997-12-09
•
Granted: 2000-04-25
•
Expires: 2017-12-09
Abstract
Abstract A method and apparatus for protecting a metal interconnect from corrosion due to contact with a low k dielectric material in a multilevel metallization and interconnect structure. To facilitate such protection, a barrier material, in the form of a sidewall spacer, is deposited between the dielectric material and the metal line.
Inventors
- 👤 Mehul Naik
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-08 03:46
CPC Classifications
H; H10; H10W; H10W20/00; H10W20/01; H10W20/031; H10W20/032; H10W20/033; H10W20/036; H10W20/063; H10W20/071; H10W20/074; H10W20/077
Claims Analysis
Total Claims: 14
Claim 1
Independent Claim
140 words
A method of forming a multilevel metallization and interconnect structure comprising the steps of: forming a metal line upon a surface of a substrate, where said metal line has a top surface and sidewalls; depositing a barrier layer over the metal line and said surface of said substrate; removing a portion of the barrier layer where said barrier layer remains deposited on at least said sidewalls of said metal line; depositing a first insulative layer over said metal line, said surface of said substrate and said barrier layer, where said insulative layer is a material that, but for the barrier layer protecting the sidewalls of the metal line, would react with a material of said metal line; depositing a second insulative layer over the first insulative layer; and, forming a via that contacts a top surface of said metal line.
Claim 2
Independent Claim
140 words
A method of forming a multilevel metallization and interconnect structure comprising the steps of: forming a metal line upon a surface of a substrate, where said metal line has a top surface and sidewalls; depositing a barrier layer over the metal line and said surface of said substrate; removing a portion of the barrier layer where said barrier layer remains deposited on at least said sidewalls of said metal line; depositing a first insulative layer over said metal line, said surface of said substrate and said barrier layer, where said insulative layer is a material that, but for the barrier layer protecting the sidewalls of the metal line, would react with a material of said metal line; depositing a second insulative layer over the first insulative layer; and, forming a via that contacts a top surface of said metal line.
Claim 3
Dependent Claim
81 words
The method of claim 1 wherein the step of depositing the second insulative layer further comprises the step of: etching back the first insulative layer until a surface of the first insulative layer is below the top surface of the metal line; and, the forming step further comprises the steps of: planarizing the second insulative layer; etching said via into said second insulative layer to expose said top surface of said metal line; and depositing a conductive material into said via.
Claim 4
Dependent Claim
65 words
The method of claim 1 wherein the forming step further comprises the steps of: planarizing the second insulative layer; etching a via through said first and second insulative layers to contact the top surface of the metal line; and depositing a conductive liner within said via, where a material of said conductive liner is inert with respect to the material of the first insulative layer.
Claim 5
Dependent Claim
25 words
The method of claim 1 wherein said removing step does not remove all of the barrier layer from the top surface of the metal line.
Claim 6
Dependent Claim
25 words
The method of claim 1 wherein said material of said first insulative layer has a dielectric constant that is less than or equal to 3.8.
Claim 7
Dependent Claim
15 words
The method of claim 1 wherein said material of said first insulative layer contains fluorine.
Claim 8
Dependent Claim
34 words
The method of claim 2 wherein said metal line further comprises: a layer of titanium; a first layer of titanium-nitride; a layer of aluminum or an aluminum-copper alloy; and a second layer of titanium-nitride.
Claim 9
Dependent Claim
33 words
The method of claim 2 wherein said metal line further comprises: a first layer of tantalum or tantalum-nitride; a layer of copper or copper alloy; and a second layer of tantalum or tantalum-nitride.
Claim 10
Dependent Claim
30 words
The method of claim 3 wherein said metal line further comprises: a first layer of titanium/titanium-nitride; a layer of aluminum or an aluminum-copper alloy; and a second layer of titanium/titanium-nitride.
Claim 11
Dependent Claim
13 words
The method of claim 3 wherein said liner layer is fabricated of titanium-nitride.
Claim 12
Dependent Claim
26 words
The method of claim 1 wherein the barrier layer is fabricated of a material that impedes corrosion of the metal line by the first insulative layer.
Claim 13
Dependent Claim
30 words
The method of claim 1 wherein the barrier layer is fabricated of a material selected from one or more of the following materials: silicon nitride, silicon oxynitride, and silicon dioxide.
Claim 14
Dependent Claim
17 words
The method of claim 1 wherein the barrier layer has a thickness of less than 500 Å.
References Cited (Backward Citations)
US5236870A
Cited
US5930655A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2003-04-25 | 2003-10-25 | 2004-04-25 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2007-04-25 | 2007-10-25 | 2008-04-25 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2011-04-25 | 2011-10-25 | 2012-04-25 | $7700.00 | Window Closed / Lapsed |