US6054363A
Expired / Lapsed
US
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Method of manufacturing semiconductor article
Assignee: Canon Inc
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Filing: 1997-11-12
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Granted: 2000-04-25
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Expires: 2017-11-12
Abstract
Abstract A method of manufacturing a semiconductor article comprises steps of preparing a first substrate including a silicon substrate having a porous silicon layer and a nonporous semiconductor layer arranged on the porous silicon layer, bonding the first substrate and a second substrate to produce a multilayer structure with the nonporous semiconductor layer located inside, separating the first and second substrates of the multilayer structure from each other along the porous silicon layer by heating the multilayer structure and removing the porous silicon layer remaining on the separated second substrate.
Inventors
- 👤 Kiyofumi Sakaguchi
- 👤 Takao Yonehara
- 👤 Tadashi Atoji
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-06 17:54
CPC Classifications
H; H10; H10P; H10P90/00; H10P90/19; H10P90/1904; H10P90/1906; H10P90/1924; H10W; H10W10/00; H10W10/10; H10W10/181
Claims Analysis
Total Claims: 35
Claim 1
Independent Claim
95 words
A method of manufacturing a semiconductor article, characterized by comprising steps of: preparing a first substrate including a silicon substrate having a porous silicon layer and a nonporous semiconductor layer arranged on said porous silicon layer; bonding said first substrate and a second substrate to produce a multilayer structure with said nonporous semiconductor layer located inside; separating said multilayer structure along said porous silicon layer by causing an electric current to flow through said porous silicon layer for heating said multilayer structure, so that said nonporous semiconductor layer is arranged on said separated second substrate.
Claim 2
Independent Claim
95 words
A method of manufacturing a semiconductor article, characterized by comprising steps of: preparing a first substrate including a silicon substrate having a porous silicon layer and a nonporous semiconductor layer arranged on said porous silicon layer; bonding said first substrate and a second substrate to produce a multilayer structure with said nonporous semiconductor layer located inside; separating said multilayer structure along said porous silicon layer by causing an electric current to flow through said porous silicon layer for heating said multilayer structure, so that said nonporous semiconductor layer is arranged on said separated second substrate.
Claim 3
Independent Claim
88 words
A method of manufacturing a semiconductor article, characterized by comprising steps of: preparing a first substrate including a silicon substrate having a porous silicon layer and a nonporous semiconductor layer arranged on said porous silicon layer; bonding said first substrate and a second substrate to produce a multilayer structure with said nonporous semiconductor layer located inside; separating said multilayer structure along said porous silicaon layer by locally heating said porous silicon layer and its proximity, so that said nonporous semiconductor layer is arranged on said separated second substrate.
Claim 4
Independent Claim
88 words
A method of manufacturing a semiconductor article, characterized by comprising steps of: preparing a first substrate including a silicon substrate having a porous silicon layer and a nonporous semiconductor layer arranged on said porous silicon layer; bonding said first substrate and a second substrate to produce a multilayer structure with said nonporous semiconductor layer located inside; separating said multilayer structure along said porous silicaon layer by locally heating said porous silicon layer and its proximity, so that said nonporous semiconductor layer is arranged on said separated second substrate.
Claim 5
Independent Claim
86 words
A method of manufacturing a semiconductor article, characterized by comprising steps of: preparing a first substrate including a silicon substrate having a porous silicon layer and a nonporous semiconductor layer arranged on said porous silicon layer; bonding said first substrate and a second substrate to produce a multilayer structure with said nonporous semiconductor layer located inside; separating said multilayer structure along said porous silicon layer by laser irradiation for heating said multilayer structure, so that said nonporous semiconductor layer is arranged on said separated second substrate.
Claim 6
Independent Claim
86 words
A method of manufacturing a semiconductor article, characterized by comprising steps of: preparing a first substrate including a silicon substrate having a porous silicon layer and a nonporous semiconductor layer arranged on said porous silicon layer; bonding said first substrate and a second substrate to produce a multilayer structure with said nonporous semiconductor layer located inside; separating said multilayer structure along said porous silicon layer by laser irradiation for heating said multilayer structure, so that said nonporous semiconductor layer is arranged on said separated second substrate.
Claim 7
Independent Claim
25 words
A method of manufacturing a semiconductor article according to claims 1 or 2, wherein said heating is an operation of partly heating said multilayer structure.
Claim 8
Dependent Claim
18 words
A method of manufacturing a semiconductor article according to claim 4, wherein said laser is carbon dioxide laser.
Claim 9
Dependent Claim
18 words
A method of manufacturing a semiconductor article according to claim 5, wherein said laser is carbon dioxide laser.
Claim 10
Dependent Claim
28 words
A method of manufacturing a semiconductor article according to claim 4, wherein said heating is realized by causing an electric current to flow through said porous silicon layer.
Claim 11
Independent Claim
42 words
A method of manufacturing a semiconductor article according to claims 1 or 2, wherein a porous silicon layer is formed on the two surfaces of said silicon substrate and thereafter a nonporous semiconductor layer is formed on the two porous silicon layers.
Claim 12
Independent Claim
26 words
A method of manufacturing a semiconductor article according to claims 1 or 2, wherein said porous silicon layer is obtained through anodization of said silicon substrate.
Claim 13
Independent Claim
76 words
A method of manufacturing a semiconductor article according to claims 1, 2, or 3, wherein said first substrate is made to carry thereon said porous silicon layer formed by implanting ions of an element selected from a rare gas element, hydrogen and nitrogen into said silicon substrate into an ion implantation region of said silicon substrate having a depth from the surface of said substrate and comprises a surface layer constituted by said nonporous semiconductor layer.
Claim 14
Independent Claim
42 words
A method of manufacturing a semiconductor article according to claims 1, 2, or 3, wherein said first substrate is formed by forming said porous silicon layer in said silicon substrate and thereafter forming said nonporous semiconductor layer on said porous silicon layer.
Claim 15
Independent Claim
27 words
A method of manufacturing a semiconductor article according to claims 1, 2, or 3, wherein said nonporous semiconductor layer is constituted by a single crystal silicon layer.
Claim 16
Dependent Claim
22 words
A method of manufacturing a semiconductor article according to claim 12, wherein said single crystal silicon layer is formed by epitaxial growth.
Claim 17
Dependent Claim
30 words
A method of manufacturing a semiconductor article according to claim 12, wherein said first substrate comprises a silicon oxide layer formed on the surface of said single crystal silicon layer.
Claim 18
Dependent Claim
21 words
A method of manufacturing a semiconductor article according to claim 14, wherein said silicon oxide layer is formed by thermal oxidation.
Claim 19
Independent Claim
24 words
A method of manufacturing a semiconductor article according to claims 1, 2, or 3, wherein said nonporous semiconductor layer comprises a compound semiconductor layer.
Claim 20
Dependent Claim
21 words
A method of manufacturing a semiconductor article according to claim 16, wherein said compound semiconductor layer has a single crystal structure.
Claim 21
Independent Claim
24 words
A method of manufacturing a semiconductor article according to claims 1, 2 or 3, wherein said second substrate is a single crystal silicon substrate.
Claim 22
Independent Claim
31 words
A method of manufacturing a semiconductor article according to claims 1, 2 or 3, wherein said second substrate is prepared by forming an oxide film on a single crystal silicon substrate.
Claim 23
Independent Claim
23 words
A method of manufacturing a semiconductor article according to claims 1, 2 or 3, wherein said second substrate is a light transmitting substrate.
Claim 24
Dependent Claim
20 words
A method of manufacturing a semiconductor article according to claim 20, wherein said light transmitting substrate is a glass substrate.
Claim 25
Independent Claim
31 words
A method of manufacturing a semiconductor article according to claims 1, 2 or 3, wherein said bonding step is conducted by bringing said two substrate into close contact with each other.
Claim 26
Independent Claim
26 words
A method of manufacturing a semiconductor article according to claims 1, 2 or 3, wherein said step is conducted through anodic bonding, pressurization or heat treatment.
Claim 27
Independent Claim
29 words
A method of manufacturing a semiconductor article according to claims 1, 2 or 3, wherein said step of removing said porous silicon layer is performed by polishing said substrate.
Claim 28
Independent Claim
29 words
A method of manufacturing a semiconductor article according to claims 1, 2 or 3, wherein said step of removing said porous silicon layer is performed by etching said substrate.
Claim 29
Dependent Claim
20 words
A method of manufacturing a semiconductor article according to claim 25, wherein said etching is conducted by using hydrofluoric acid.
Claim 30
Independent Claim
76 words
A method of separating a semiconductor layer, comprising steps of: preparing a first substrate including a silicon substrate having a porous silicon layer and a nonporous semiconductor layer arranged on said porous silicon layer; bonding said first substrate and a second substrate to produce a multilayer structure with said nonporous semiconductor layer located inside; separating said nonporous semiconductor layer from said first substrate along said porous silicon layer by laser irradiation for heating said multilayer structure.
Claim 31
Independent Claim
76 words
A method of separating a semiconductor layer, comprising steps of: preparing a first substrate including a silicon substrate having a porous silicon layer and a nonporous semiconductor layer arranged on said porous silicon layer; bonding said first substrate and a second substrate to produce a multilayer structure with said nonporous semiconductor layer located inside; separating said nonporous semiconductor layer from said first substrate along said porous silicon layer by laser irradiation for heating said multilayer structure.
Claim 32
Independent Claim
85 words
A method of separating a semiconductor layer, comprising steps of: preparing a first substrate including a silicon substrate having a porous silicon layer and a nonporous semiconductor layer arranged on said porous silicon layer; bonding said first substrate and a second substrate to produce a multilayer structure with said nonporous semiconductor layer located inside; separating said nonporous semiconductor layer from said first substrate along said porous silicon layer by causing an electric current to flow through said porous silicon layer for heating said multilayer structure.
Claim 33
Independent Claim
85 words
A method of separating a semiconductor layer, comprising steps of: preparing a first substrate including a silicon substrate having a porous silicon layer and a nonporous semiconductor layer arranged on said porous silicon layer; bonding said first substrate and a second substrate to produce a multilayer structure with said nonporous semiconductor layer located inside; separating said nonporous semiconductor layer from said first substrate along said porous silicon layer by causing an electric current to flow through said porous silicon layer for heating said multilayer structure.
Claim 34
Independent Claim
72 words
A method of separating a semiconductor layer, comprising steps of: preparing a first substrate including a silicon substrate having a porous silicon layer and a nonporous semiconductor layer arranged on said porous silicon layer; bonding said first substrate and a second substrate to produce a multilayer located inside; separating said nonporous semiconductor layer from said first substrate along said porous silicon layer by locally heating said porous silicon layer and its proximity.
Claim 35
Independent Claim
72 words
A method of separating a semiconductor layer, comprising steps of: preparing a first substrate including a silicon substrate having a porous silicon layer and a nonporous semiconductor layer arranged on said porous silicon layer; bonding said first substrate and a second substrate to produce a multilayer located inside; separating said nonporous semiconductor layer from said first substrate along said porous silicon layer by locally heating said porous silicon layer and its proximity.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
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| 3.5 Years (Year 4) | 2003-04-25 | 2003-10-25 | 2004-04-25 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2007-04-25 | 2007-10-25 | 2008-04-25 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2011-04-25 | 2011-10-25 | 2012-04-25 | $7700.00 | Window Closed / Lapsed |