US6051508A
Expired / Lapsed
US
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Manufacturing method of semiconductor device
Assignee: Toshiba Corp
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Filing: 1998-09-02
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Granted: 2000-04-18
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Expires: 2018-09-02
Abstract
Abstract The present invention intends to form multilayer interconnects without deteriorating the advantage of an organosiloxane film (an interlayer dielectric), i.e., the low dielectric constant. According to the present invention, an organosiloxane film, a silicon nitride film, an inorganic SOG film, and a photoresist pattern are formed on a first metal layer, in series. The inorganic SOG film is then etched with use of the photoresist pattern as a mask to transfer the photoresist pattern to the inorganic SOG film. The photoresist pattern is then removed by oxygen plasma treatment with use of the silicon nitride film as a protection mask for protecting the organosiloxane film. Subsequently thereto, the silicon nitride film and the organosiloxane film are etched with use of the inorganic SOG film to form a contact hole reaching the first metal layer. After removing the inorganic SOG film, a second metal layer is formed to contact with the first metal layer through the contact hole.
Inventors
- 👤 Tamao Takase
- 👤 Tadashi Matsuno
- 👤 Hideshi Miyajima
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-05 00:43
CPC Classifications
H; H10; H10W; H10W20/00; H10W20/01; H10W20/071; H10W20/081; H10W20/084; H10W20/086; Y; Y10; Y10S; Y10S438/00; Y10S438/954
Claims Analysis
Total Claims: 10
Claim 1
Independent Claim
136 words
A manufacturing method of a semiconductor device, comprising the steps of: forming a first insulating film above a base in which a first wiring layer is formed, so as to cover the first wiring layer, forming a second insulating film and a third insulating film on the first insulating film, in order, forming a first photoresist pattern on the third insulating film, selectively etching the third insulating film with use of the first photoresist pattern as a mask so as to transfer the first photoresist pattern to the third insulating film, wherein the second insulating film is used as an etching resistance mask for protecting the first insulating film from the etching, and removing the first photoresist pattern by using the second insulating film as a protection mask for protecting the first insulating film from damage.
Claim 2
Dependent Claim
136 words
A manufacturing method of a semiconductor device, comprising the steps of: forming a first insulating film above a base in which a first wiring layer is formed, so as to cover the first wiring layer, forming a second insulating film and a third insulating film on the first insulating film, in order, forming a first photoresist pattern on the third insulating film, selectively etching the third insulating film with use of the first photoresist pattern as a mask so as to transfer the first photoresist pattern to the third insulating film, wherein the second insulating film is used as an etching resistance mask for protecting the first insulating film from the etching, and removing the first photoresist pattern by using the second insulating film as a protection mask for protecting the first insulating film from damage.
Claim 3
Dependent Claim
41 words
A manufacturing method according to claim 1, further comprising the steps of: etching the second and the first insulating films in order, after the removing step of the first photoresist pattern, with use of the third insulating film as a mask.
Claim 4
Dependent Claim
38 words
A manufacturing method according to claim 1, wherein the first insulating film is formed from an organic material having dielectric constant not more than 3.6, and the second and third insulating films are formed from an inorganic material.
Claim 5
Dependent Claim
18 words
A manufacturing method according to claim 1, wherein the first photoresist pattern is removed by using oxygen plasma.
Claim 6
Dependent Claim
29 words
A manufacturing method according to claim 2, wherein, after etching the second and first insulating film, the second wiring layer is formed after the second insulating film is removed.
Claim 7
Dependent Claim
172 words
A manufacturing method according to claim 1, further comprising the steps of: forming an opening reaching the first insulating film by etching the second insulating film with use of the third insulating film as a mask, after the removing step of the first photoresist pattern, forming a fourth insulating film on the first and second insulating films so as to fill the opening, forming a fifth insulating film and a sixth insulating film on the fourth insulating film, in order, forming on the sixth insulating film a second photoresist pattern having an opening pattern corresponding to a wiring trench, selectively etching the sixth insulating film with use of the photoresist pattern as a mask so as to transfer the second photoresist pattern to the sixth insulating film, wherein the fifth insulating film is used as an etching resistance mask for protecting the fourth insulating film from the etching, and removing the second photoresist pattern by using the fifth insulating film as a protection mask for protecting the fourth insulating film from damage.
Claim 8
Dependent Claim
116 words
A manufacturing method according to claim 6, further comprising the steps of: forming a wiring trench in the fourth insulating film by etching the fifth and fourth insulating films with use of the sixth insulating film as a mask to expose the second insulating film after the removing step of the second photoresist pattern, forming a contact hole reaching the first wiring layer by etching the fourth and the first insulating films in order, with use of the sixth insulating film and the exposed second insulating film as masks, and forming a second wiring layer to contact the first wiring layer through the wiring trench and the contact hole, after the sixth insulating film is removed.
Claim 9
Dependent Claim
42 words
A manufacturing method according to claim 6, wherein the first and fourth insulating films are formed from an organic material having dielectric constant not more than 3.6, and the second, third, fifth, and sixth insulating films are formed from an inorganic material.
Claim 10
Dependent Claim
27 words
A manufacturing method according to claim 7, wherein, after removing the sixth insulating film, the second wiring layer is formed after the fifth insulating film is removed.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2003-04-18 | 2003-10-18 | 2004-04-18 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2007-04-18 | 2007-10-18 | 2008-04-18 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2011-04-18 | 2011-10-18 | 2012-04-18 | $7700.00 | Window Closed / Lapsed |