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US6043513A
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Method of producing an ohmic contact and a semiconductor device provided with such ohmic contact
Assignee: Telefonaktiebolaget LM Ericsson AB
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Filing: 1998-09-11
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Granted: 2000-03-28
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Expires: 2018-09-11
Abstract
Abstract In a method of producing an ohmic contact (5) to a p-type α-SiC layer (3b) in a semiconductor device (1), layers of aluminium, titanium and silicon are deposited on said α-SiC layer (3b), and said deposited layers (5) are annealed to convert at least part of said deposited layers (5) to aluminium-titanium-silicide.
Inventors
- 👤 Bertil Kronlund
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 13:24
CPC Classifications
H; H10; H10D; H10D62/00; H10D62/80; H10D62/83; H10D62/832; H10D62/8325; H10D64/00; H10D64/01; H10D64/011; H10D64/0111; H10D64/0115; H10D64/60; H10D64/62; H10D8/00; H10D8/01; H10D8/043; H10D8/051; Y; Y10; Y10S; Y10S438/00; Y10S438/931
Claims Analysis
Total Claims: 2
Claim 1
Independent Claim
24 words
A semiconductor device comprising a p-type α-SiC layer, characterized in that at least one ohmic contact comprising aluminium-titanium-silicide, is provided on said α-SiC layer.
Claim 2
Dependent Claim
24 words
A semiconductor device comprising a p-type α-SiC layer, characterized in that at least one ohmic contact comprising aluminium-titanium-silicide, is provided on said α-SiC layer.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2003-03-28 | 2003-09-27 | 2004-03-28 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2007-03-28 | 2007-09-27 | 2008-03-28 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2011-03-28 | 2011-09-27 | 2012-03-28 | $7700.00 | Window Closed / Lapsed |