US5319220A
Expired / Lapsed
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Silicon carbide semiconductor device
Assignee: Sharp Corp
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Filing: 1992-06-08
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Granted: 1994-06-07
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Expires: 2012-06-08
Abstract
Abstract A silicon carbide semiconductor device is provided which includes at least one heterojunction composed of two different polytypes of silicon carbide. The two polytypes of silicon carbide in the heterojunction include a β-type silicon carbide layer having an α-type silicon carbide layer disposed thereon.
Inventors
- 👤 Akira Suzuki
- 👤 Katsuki Furukawa
- 👤 Mitsuhiro Shigeta
- 👤 Yoshihisa Fujii
- 👤 Atsuko Ogura
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 13:45
CPC Classifications
H; H10; H10H; H10H20/00; H10H20/80; H10H20/81; H10H20/822; H10H20/826; H10D; H10D10/00; H10D10/80; H10D10/821; H10D62/00; H10D62/80; H10D62/83; H10D62/832; H10D62/8325; H10F; H10F77/00; H10F77/10; H10F77/12; H10F77/122; H10F77/1226; Y; Y10; Y10S; Y10S438/00; Y10S438/931
Claims Analysis
Total Claims: 4
Claim 1
Independent Claim
137 words
A silicon carbide semiconductor device comprising at least one α/βheterojunction, wherein the device comprises a light-emitting diode including: an n-type conductivity β-type silicon carbide semiconductor substrate, a first p-type conductivity β-type silicon carbide semiconductor layer grown on said n-type conductivity β-type silicon carbide semiconductor substrate, a second p-type conductivity α-type silicon carbide semiconductor layer grown on said p-type conductivity B-type silicon carbide semiconductor layer formed on said n-type conductivity β-type silicon carbide semiconductor substrate, an n-sided ohmic electrode disposed on a back face of said n-type conductivity β-type silicon carbide semiconductor substrate opposite to the face of said n-type conductivity β-type silicon carbide semiconductor substrate having said first p-type conductivity β-type silicon carbide semiconductor layer grown thereon, and a p-sided ohmic electrode disposed on the upper face of said second p-type conductivity α-type silicon carbide semiconductor layer.
Claim 2
Dependent Claim
137 words
A silicon carbide semiconductor device comprising at least one α/βheterojunction, wherein the device comprises a light-emitting diode including: an n-type conductivity β-type silicon carbide semiconductor substrate, a first p-type conductivity β-type silicon carbide semiconductor layer grown on said n-type conductivity β-type silicon carbide semiconductor substrate, a second p-type conductivity α-type silicon carbide semiconductor layer grown on said p-type conductivity B-type silicon carbide semiconductor layer formed on said n-type conductivity β-type silicon carbide semiconductor substrate, an n-sided ohmic electrode disposed on a back face of said n-type conductivity β-type silicon carbide semiconductor substrate opposite to the face of said n-type conductivity β-type silicon carbide semiconductor substrate having said first p-type conductivity β-type silicon carbide semiconductor layer grown thereon, and a p-sided ohmic electrode disposed on the upper face of said second p-type conductivity α-type silicon carbide semiconductor layer.
Claim 3
Dependent Claim
121 words
A silicon carbide semiconductor device comprising at least one α/βheterojunction, wherein the device comprises a bipolar transistor including: an n-type conductivity β-type silicon carbide collector layer, a p-type conductivity β-type silicon carbide base layer grown on said n-type conductivity β-type silicon carbide collector layer, an n-type conductivity α-type silicon carbide emitter layer grown on said p-type conductivity β-type silicon carbide base layer, a collector electrode disposed on a back face of said n-type conductivity β-type silicon carbide collector layer opposite to the face of said n-type conductivity β-type silicon carbide collector layer having said p-type conductivity β-type silicon carbide base layer grown thereon, and an emitter electrode disposed on the upper face of said n-type conductivity α-type silicon carbide emitter layer.
Claim 4
Dependent Claim
121 words
A silicon carbide semiconductor device comprising at least one α/βheterojunction, wherein the device comprises a bipolar transistor including: an n-type conductivity β-type silicon carbide collector layer, a p-type conductivity β-type silicon carbide base layer grown on said n-type conductivity β-type silicon carbide collector layer, an n-type conductivity α-type silicon carbide emitter layer grown on said p-type conductivity β-type silicon carbide base layer, a collector electrode disposed on a back face of said n-type conductivity β-type silicon carbide collector layer opposite to the face of said n-type conductivity β-type silicon carbide collector layer having said p-type conductivity β-type silicon carbide base layer grown thereon, and an emitter electrode disposed on the upper face of said n-type conductivity α-type silicon carbide emitter layer.
References Cited (Backward Citations)
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