Preparation of silicon carbide single crystal base

Abstract

Abstract PURPOSE:To obtain a high-quality silicon carbide single crystal base with a large area in good mass production, by growing an alpha type silicon carbide single crystal layer on a beta type silicon carbide single crystal base. CONSTITUTION:An alpha type silicon carbide single crystal phase is grown on a beta type silicon carbidie single crystal base by CVD method, liquid-phase growth method, sputtering method, etc. Consequently, an alpha type silicon carbide single crystal having high quality and a large area is obtained. A stable means as a photoelectric transfer material such as emission element, receptor element, etc. of visible ray of short wavelength including blue is opened by this method.

Inventors

• 👤 Akira Suzuki
• 👤 彰 鈴木
• 👤 Masaki Furukawa
• 👤 勝紀 古川

Bibliographic Details