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Patent US6043167A successfully refreshed from Google Patents.
US6043167A
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Method for forming low dielectric constant insulating film
Assignee: SK Hynix Inc
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Filing: 1997-10-10
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Granted: 2000-03-28
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Expires: 2017-10-10
Abstract
Abstract The method for forming an insulating film having a low dielectric constant, which is suitable for intermetal insulating film applications, by plasma enhanced chemical vapor deposition (PECVD) includes the step of supplying a first source gas containing fluorine and carbon to a dual-frequency, high density plasma reactor. The method also includes the step of supplying a second source gas containing silicon dioxide to the reactor. In this manner a fluorocarbon/silicon dioxide film is formed on a substrate in the reactor.
Inventors
- 👤 Young Hie Lee
- 👤 Dong Sun Kim
- 👤 Jin Won Park
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-30 23:18
CPC Classifications
H; H10; H10P; H10P14/00; H10P14/60; H10P14/63; H10P14/6326; H10P14/6328; H10P14/6334; H10P14/6336; C; C23; C23C; C23C16/00; C23C16/22; C23C16/30; C23C16/44; C23C16/50; C23C16/517; H10P14/66; H10P14/668; H10P14/6681; H10P14/6684; H10P14/6686; H10P14/68; H10P14/683; H10P14/687; H10P14/69; H10P14/692; H10P14/6921; H10P14/69215; H10P14/6922; H10P14/6923; Y; Y10; Y10S; Y10S438/00; Y10S438/958
Claims Analysis
Total Claims: 14
Claim 1
Independent Claim
56 words
A method for forming a low dielectric constant insulating film comprising: supplying a first source gas containing perfluorobenzene (C 6 F 6 ) to a dual-frequency, high density plasma reactor; and supplying a second source gas containing silicon dioxide to the reactor to form a fluorocarbon/silicon oxide composite film on a substrate located in the reactor.
Claim 2
Independent Claim
56 words
A method for forming a low dielectric constant insulating film comprising: supplying a first source gas containing perfluorobenzene (C 6 F 6 ) to a dual-frequency, high density plasma reactor; and supplying a second source gas containing silicon dioxide to the reactor to form a fluorocarbon/silicon oxide composite film on a substrate located in the reactor.
Claim 3
Dependent Claim
15 words
A method as claimed in claim 1, wherein the second source gas includes hexamethyldisiloxane (HMDSO).
Claim 4
Dependent Claim
31 words
A method as claimed in claim 1, wherein a flow rate of the first source gas is 12.6 SCCM and a flow rate of the second source gas is 1.4 SCCM.
Claim 5
Dependent Claim
29 words
A method as claimed in claim 1, wherein a ratio of the second source gas to a sum of the first, and second source gases is 0.01 to 0.99.
Claim 6
Dependent Claim
25 words
A method as claimed in claim 1, wherein a dielectric constant of the fluorocarbon/silicon oxide composite film is in the range of 2.0 to 4.0.
Claim 7
Dependent Claim
49 words
A method as claimed in claim 1, wherein a temperature of the substrate in the reactor is in a range of 60° C. to 350° C. and the bias voltage of the substrate is in a range of -50V to -400V during formation of the fluorocarbon/silicon oxide composite film.
Claim 8
Dependent Claim
23 words
A method as claimed in claim 1, wherein the substrate is formed of one of silicon, metals, ceramics, glass, polymers and potassium chloride.
Claim 9
Dependent Claim
23 words
A method as claimed in claim 1, wherein a pressure in the reactor is in a range of 50 to 200×10 -3 Torr.
Claim 10
Independent Claim
64 words
A method for forming a low dielectric constant insulating film, comprising: (a) providing a dual-frequency, high density plasma reactor; (b) placing a substrate within said reactor; and (c) supplying a first source and second source gas to form a fluorocarbon/silicon oxide composite film on said substrate, said first gas containing perfluorobenzene (C 6 F 6 ), and said second source gas containing silicon dioxide.
Claim 11
Independent Claim
64 words
A method for forming a low dielectric constant insulating film, comprising: (a) providing a dual-frequency, high density plasma reactor; (b) placing a substrate within said reactor; and (c) supplying a first source and second source gas to form a fluorocarbon/silicon oxide composite film on said substrate, said first gas containing perfluorobenzene (C 6 F 6 ), and said second source gas containing silicon dioxide.
Claim 12
Dependent Claim
46 words
A method as claimed in claim 9, wherein said step (a) provides said reactor having a top electrode and a bottom electrode; and further comprising: (d) supplying a high frequency signal to said top electrode; and (e) supplying a low frequency signal to said bottom electrode.
Claim 13
Dependent Claim
25 words
A method as claimed in claim 10, wherein said step (d) supplying a signal having a frequency of 13.56 MHz as said high frequency signal.
Claim 14
Dependent Claim
30 words
A method as claimed in claim 10, wherein said step (e) supplies a signal having a frequency of between 10 KHz and 100 KHz inclusive as said low frequency signal.
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| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
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| 3.5 Years (Year 4) | 2003-03-28 | 2003-09-27 | 2004-03-28 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2007-03-28 | 2007-09-27 | 2008-03-28 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2011-03-28 | 2011-09-27 | 2012-03-28 | $7700.00 | Window Closed / Lapsed |