US6040241A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method of avoiding sidewall residue in forming connections
Assignee: United Microelectronics Corp
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Filing: 1998-02-11
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Granted: 2000-03-21
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Expires: 2018-02-11
Abstract
Abstract The method in the present invention for forming insulation over conductor includes the following steps. At first, a substrate with a first conductor formed over is provided. The first conductor can be either a gate structure or an interconnection layer. A dielectric layer is then formed over the first conductor the substrate. A portion of the dielectric layer is removed for having a recess free sidewall on the dielectric layer around the first conductor. An insulation for succeeding conductive layer is formed.
Inventors
- 👤 Tzung-Han Lee
- 👤 Horng-Nan Chern
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-30 12:29
CPC Classifications
H; H10; H10W; H10W20/00; H10W20/01; H10W20/031; H10W20/063; H10D; H10D64/00; H10D64/01; H10D64/013; H10D64/01302; H10D64/01304; H10D64/01306; H10D64/01308; H10D64/01312; H10W20/071
Claims Analysis
Total Claims: 15
Claim 1
Independent Claim
118 words
A method for forming insulation over conductor, said method comprising the steps of: providing a substrate with a gate structure formed over, wherein said gate structure includes: a polysilicon layer over said substrate; a tungsten silicide layer over said polysilicon layer; an upper insulator layer over said tungsten silicide layer; and insulator spacers with a recessed region covering conformably on sidewalls of said upper insulator layer, said tungsten silicide layer and said polysilicon layer; forming a dielectric layer over said gate structure and said substrate; and performing an etching back process to remove a portion of said dielectric layer for thinning said dielectric layer and having a recess free sidewall on said dielectric layer around said gate structure.
Claim 2
Independent Claim
118 words
A method for forming insulation over conductor, said method comprising the steps of: providing a substrate with a gate structure formed over, wherein said gate structure includes: a polysilicon layer over said substrate; a tungsten silicide layer over said polysilicon layer; an upper insulator layer over said tungsten silicide layer; and insulator spacers with a recessed region covering conformably on sidewalls of said upper insulator layer, said tungsten silicide layer and said polysilicon layer; forming a dielectric layer over said gate structure and said substrate; and performing an etching back process to remove a portion of said dielectric layer for thinning said dielectric layer and having a recess free sidewall on said dielectric layer around said gate structure.
Claim 3
Dependent Claim
32 words
The method of claim 1, wherein said method further comprising the steps of forming a conductor over said dielectric layer; and removing a portion of said conductor to define a conductor pattern.
Claim 4
Dependent Claim
20 words
The method of claim 2, wherein said conductor comprises a combination of conductive layers to serve as an interconnection layer.
Claim 5
Dependent Claim
28 words
The method of claim 1, wherein said recessed region on sidewall is due to said narrower tungsten silicide layer formed by clean process before said insulator spacer formed.
Claim 6
Dependent Claim
13 words
The method of claim 1, wherein said dielectric layer comprises an oxide layer.
Claim 7
Dependent Claim
22 words
The method of claim 5, wherein said oxide layer is formed by chemical vapor deposition with a reaction gas of tetra-ethyl-ortho-silicate (TEOS).
Claim 8
Dependent Claim
15 words
The method of claim 1, wherein said dielectric layer comprises at least two oxide layers.
Claim 9
Independent Claim
134 words
A method for forming connection, said method comprising the steps of: providing a substrate with a gate structure formed over, wherein said gate structure includes: a polysilicon layer over said substrate; a tungsten silicide layer over said polysilicon layer; an upper insulator layer over said tungsten silicide layer; and nitride spacers with a recessed region covering conformably on sidewalls of said upper insulator layer, said tungsten silicide layer and said polysilicon layer; forming a dielectric layer over said gate structure and said substrate; performing an etching back process to remove a portion of said dielectric layer for thinning said dielectric layer and having a recess free sidewall on said dielectric layer around said gate structure; forming a conductor over said dielectric layer; and removing a portion of said conductor to define a conductor pattern.
Claim 10
Independent Claim
134 words
A method for forming connection, said method comprising the steps of: providing a substrate with a gate structure formed over, wherein said gate structure includes: a polysilicon layer over said substrate; a tungsten silicide layer over said polysilicon layer; an upper insulator layer over said tungsten silicide layer; and nitride spacers with a recessed region covering conformably on sidewalls of said upper insulator layer, said tungsten silicide layer and said polysilicon layer; forming a dielectric layer over said gate structure and said substrate; performing an etching back process to remove a portion of said dielectric layer for thinning said dielectric layer and having a recess free sidewall on said dielectric layer around said gate structure; forming a conductor over said dielectric layer; and removing a portion of said conductor to define a conductor pattern.
Claim 11
Dependent Claim
28 words
The method of claim 8, wherein said recessed region on sidewall is due to said narrower tungsten silicide layer formed by clean process before said insulator spacer formed.
Claim 12
Dependent Claim
20 words
The method of claim 8, wherein said conductor comprises a combination of conductive layers to serve as an interconnection layer.
Claim 13
Dependent Claim
13 words
The method of claim 8, wherein said dielectric layer comprises an oxide layer.
Claim 14
Dependent Claim
22 words
The method of claim 8, wherein said oxide layer is formed by chemical vapor deposition with a reaction gas of tetra-ethyl-ortho-silicate (TEOS).
Claim 15
Dependent Claim
15 words
The method of claim 8, wherein said dielectric layer comprises at least two oxide layers.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2003-03-21 | 2003-09-20 | 2004-03-21 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2007-03-21 | 2007-09-20 | 2008-03-21 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2011-03-21 | 2011-09-20 | 2012-03-21 | $7700.00 | Window Closed / Lapsed |