US6015759A — Surface modification of semiconductors using elec…

Claim 1

Independent Claim 63 words

A method for preparing the surface of a semiconductor wafer to reduce surface sensitivity, comprising: providing a semiconductor substrate, wherein the surface of said substrate has a layer of dielectric material thereon; and exposing the surface of the wafer to electromagnetic radiation having a wavelength between about 60 nanometers and about 550 nanometers sufficient to reduce the surface sensitivity of said semiconductor surface.

Claim 2

Independent Claim 63 words

A method for preparing the surface of a semiconductor wafer to reduce surface sensitivity, comprising: providing a semiconductor substrate, wherein the surface of said substrate has a layer of dielectric material thereon; and exposing the surface of the wafer to electromagnetic radiation having a wavelength between about 60 nanometers and about 550 nanometers sufficient to reduce the surface sensitivity of said semiconductor surface.

Claim 3

Dependent Claim 49 words

The method of claim 1, wherein the dielectric material is selected from the group consisting of thermal oxide, silicon dioxide deposited by plasma enhanced chemical vapor deposition, silicon dioxide deposited by high density plasma enhanced chemical vapor deposition, phosphorous silicate glass, borophosphorous glass, spin on glass, and silicon nitride.

Claim 4

Independent Claim 57 words

A method for preparing the surface of a semiconductor wafer to reduce surface sensitivity, comprising: providing a semiconductor substrate, wherein the surface of said substrate has contaminants thereon; and exposing the surface of the wafer to electromagnetic radiation having a wavelength between about 60 nanometers and about 550 nanometers sufficient to remove contaminants from said semiconductor surface.

Claim 5

Independent Claim 57 words

A method for preparing the surface of a semiconductor wafer to reduce surface sensitivity, comprising: providing a semiconductor substrate, wherein the surface of said substrate has contaminants thereon; and exposing the surface of the wafer to electromagnetic radiation having a wavelength between about 60 nanometers and about 550 nanometers sufficient to remove contaminants from said semiconductor surface.

Claim 6

Dependent Claim 26 words

The method of claim 3, wherein the contaminants comprise at least one of excess H 2 O, carbon-containing molecules, Si--OH bonds, Si--F bonds, and Si--O--Si bonds.

Claim 7

Dependent Claim 17 words

The method of claim 1, wherein the electromagnetic radiation is in the range of vacuum ultraviolet wavelengths.

Claim 8

Independent Claim 24 words

The method of claims 1 or 3, wherein the electromagnetic radiation comprises wavelengths in the range of about vacuum ultraviolet to about ultraviolet wavelengths.

Claim 9

Independent Claim 82 words

A method for preparing a semiconductor wafer, comprising: providing a semiconductor wafer, wherein the surface of said substrate has contaminants thereon; placing said wafer in a chamber; evacuating said chamber; introducing a moiety capable of emitting electromagnetic radiation of at least one of vacuum ultraviolet wavelengths and ultraviolet wavelengths into said chamber; and exposing said moiety to an electric field sufficient to generate at least one of vacuum ultraviolet and ultraviolet radiation from said moiety; thereby exposing the wafer to said radiation.

Claim 10

Independent Claim 82 words

A method for preparing a semiconductor wafer, comprising: providing a semiconductor wafer, wherein the surface of said substrate has contaminants thereon; placing said wafer in a chamber; evacuating said chamber; introducing a moiety capable of emitting electromagnetic radiation of at least one of vacuum ultraviolet wavelengths and ultraviolet wavelengths into said chamber; and exposing said moiety to an electric field sufficient to generate at least one of vacuum ultraviolet and ultraviolet radiation from said moiety; thereby exposing the wafer to said radiation.

Claim 11

Independent Claim 67 words

A method for preparing the surface of a semiconductor wafer, comprising: providing a semiconductor substrate, wherein the surface of said substrate has a layer of dielectric material thereon; and exposing the surface of the wafer to electromagnetic radiation having a wavelength between about 60 nanometers and about 550 nanometers and having an intensity in the range of about 0.005 Watts/cm 2 to about 100 Watts/cm 2 .

Claim 12

Independent Claim 67 words

A method for preparing the surface of a semiconductor wafer, comprising: providing a semiconductor substrate, wherein the surface of said substrate has a layer of dielectric material thereon; and exposing the surface of the wafer to electromagnetic radiation having a wavelength between about 60 nanometers and about 550 nanometers and having an intensity in the range of about 0.005 Watts/cm 2 to about 100 Watts/cm 2 .

Claim 13

Dependent Claim 15 words

The method of claim 1, wherein the electromagnetic radiation is derived from an excimer device.

Claim 14

Dependent Claim 17 words

The method of claim 1, wherein the electromagnetic radiation is derived from a dielectric barrier discharge apparatus.

Claim 15

Dependent Claim 13 words

The method of claim 9, wherein the excimer apparatus uses a noble gas.

Claim 16

Independent Claim 94 words

A method for preparing a semiconductor wafer to reduce surface sensitivity, comprising: providing a semiconductor substrate, wherein the surface of said substrate has contaminants thereon; placing said wafer on a chuck in a chamber which does not contain a gas capable of absorbing electromagnetic radiation; and exposing said wafer to electromagnetic radiation having a wavelength in the range of about 60 nm to about 550 nm derived from one of an excimer lamp, a dielectric barrier discharge apparatus and a open excimer apparatus for sufficient time to substantially remove the contaminants from said surface.

Claim 17

Independent Claim 94 words

A method for preparing a semiconductor wafer to reduce surface sensitivity, comprising: providing a semiconductor substrate, wherein the surface of said substrate has contaminants thereon; placing said wafer on a chuck in a chamber which does not contain a gas capable of absorbing electromagnetic radiation; and exposing said wafer to electromagnetic radiation having a wavelength in the range of about 60 nm to about 550 nm derived from one of an excimer lamp, a dielectric barrier discharge apparatus and a open excimer apparatus for sufficient time to substantially remove the contaminants from said surface.

Claim 18

Independent Claim 107 words

A method for preparing a semiconductor wafer, comprising: providing a semiconductor wafer, wherein the surface of said substrate has contaminants thereon; placing said wafer in a chamber; evacuating said chamber; introducing a moiety capable of emitting electromagnetic radiation of at least one of vacuum ultraviolet wavelengths and ultraviolet wavelengths into said chamber; and exposing said moiety to an electric field sufficient to generate at least one of vacuum ultraviolet and ultraviolet radiation from said moiety; and exposing said wafer to the at least one of the vacuum ultraviolet radiation and ultraviolet radiation for sufficient time to substantially remove the contaminants from the surface of said semiconductor substrate.

Claim 19

Independent Claim 107 words

A method for preparing a semiconductor wafer, comprising: providing a semiconductor wafer, wherein the surface of said substrate has contaminants thereon; placing said wafer in a chamber; evacuating said chamber; introducing a moiety capable of emitting electromagnetic radiation of at least one of vacuum ultraviolet wavelengths and ultraviolet wavelengths into said chamber; and exposing said moiety to an electric field sufficient to generate at least one of vacuum ultraviolet and ultraviolet radiation from said moiety; and exposing said wafer to the at least one of the vacuum ultraviolet radiation and ultraviolet radiation for sufficient time to substantially remove the contaminants from the surface of said semiconductor substrate.

Claim 20

Dependent Claim 33 words

The method of claim 13, wherein the moiety is selected from the group consisting of helium, neon, krypton, KrF, KrCl, mercury, selenium, XeF, XeCl, argon/fluorine, mercury/argon, deuterium, nitrogen, argon, xenon, oxygen, and ammonia.

Claim 21

Independent Claim 78 words

An apparatus for preparing the surface of a semiconductor wafer, comprising: a chamber; a heated chuck in said chamber for holding a semiconductor wafer, wherein said chuck is moveable in three dimensions; a source for providing at least one of vacuum ultraviolet radiation and ultraviolet radiation within said chamber over said chuck; an inlet port for introducing gas into the chamber; an exhaust port for evacuating the chamber; and a pump to decrease the pressure in said chamber.

Claim 22

Independent Claim 78 words

An apparatus for preparing the surface of a semiconductor wafer, comprising: a chamber; a heated chuck in said chamber for holding a semiconductor wafer, wherein said chuck is moveable in three dimensions; a source for providing at least one of vacuum ultraviolet radiation and ultraviolet radiation within said chamber over said chuck; an inlet port for introducing gas into the chamber; an exhaust port for evacuating the chamber; and a pump to decrease the pressure in said chamber.

Claim 23

Dependent Claim 16 words

The apparatus of claim 15, further comprising a reflector for directing the radiation to the wafer.

Claim 24

Independent Claim 45 words

An apparatus for preparing the surface of a semiconductor wafer, comprising: a chamber; a heated chuck capable of being moved in three dimensions in said chamber for holding a semiconductor wafer; and a source for providing vacuum ultraviolet radiation within said chamber over said chuck.

Claim 25

Independent Claim 45 words

An apparatus for preparing the surface of a semiconductor wafer, comprising: a chamber; a heated chuck capable of being moved in three dimensions in said chamber for holding a semiconductor wafer; and a source for providing vacuum ultraviolet radiation within said chamber over said chuck.

Claim 26

Dependent Claim 20 words

The apparatus of claim 17, further comprising a source for providing ultraviolet radiation within said chamber relative to said chuck.

Claim 27

Dependent Claim 19 words

The apparatus of claim 17, wherein the source of the vacuum ultraviolet radiation is derived from dielectric barrier discharge.

Claim 28

Dependent Claim 17 words

The apparatus of claim 17, wherein the source of the vacuum ultraviolet radiation is an excimer apparatus.

Claim 29

Dependent Claim 51 words

A semiconductor wafer, wherein the surface of said semiconductor wafer comprises a layer of dielectric material, and wherein said surface of said semiconductor wafer has been prepared by exposing said surface to electromagnetic radiation having a wavelength between about 60 nanometers and about 550 nanometers sufficient to reduce the surface sensitivity.

Claim 30

Dependent Claim 51 words

A semiconductor wafer, wherein the surface of said semiconductor wafer comprises a layer of dielectric material, and wherein said surface of said semiconductor wafer has been prepared by exposing said surface to electromagnetic radiation having a wavelength between about 60 nanometers and about 550 nanometers sufficient to reduce the surface sensitivity.

Claim 31

Dependent Claim 50 words

The semiconductor wafer of claim 21, wherein the dielectric material is selected from the group consisting of thermal oxide, silicon dioxide deposited by plasma enhanced chemical vapor deposition, silicon dioxide deposited by high density plasma enhanced chemical vapor deposition, phosphorous silicate glass, borophosphorous glass, spin on glass, and silicon nitride.

Claim 32

Dependent Claim 59 words

A semiconductor wafer, wherein the surface of said semiconductor wafer has been prepared by exposing said surface in a chamber which does not contain a gas capable of absorbing electromagnetic radiation to electromagnetic radiation having a wavelength in the range of about 60 nm to about 550 nm sufficient to remove contaminants from said surface to reduce surface sensitivity.

Claim 33

Dependent Claim 59 words

A semiconductor wafer, wherein the surface of said semiconductor wafer has been prepared by exposing said surface in a chamber which does not contain a gas capable of absorbing electromagnetic radiation to electromagnetic radiation having a wavelength in the range of about 60 nm to about 550 nm sufficient to remove contaminants from said surface to reduce surface sensitivity.

Claim 34

Independent Claim 67 words

A method for manufacturing a layer of undoped silicate glass on the surface of a semiconductor wafer, comprising: providing a semiconductor wafer, wherein the surface of said wafer comprises a layer of dielectric material; exposing the surface of said wafer to at least one of vacuum ultraviolet radiation and ultraviolet radiation sufficient to reduce surface sensitivity; and depositing on said surface, a layer of undoped silicate glass.

Claim 35

Independent Claim 67 words

A method for manufacturing a layer of undoped silicate glass on the surface of a semiconductor wafer, comprising: providing a semiconductor wafer, wherein the surface of said wafer comprises a layer of dielectric material; exposing the surface of said wafer to at least one of vacuum ultraviolet radiation and ultraviolet radiation sufficient to reduce surface sensitivity; and depositing on said surface, a layer of undoped silicate glass.

Claim 36

Dependent Claim 49 words

The method of claim 24, wherein the dielectric material is selected from the group consisting of thermal oxide, silicon dioxide deposited by plasma enhanced chemical vapor deposition, silicon dioxide deposited by high density plasma enhanced chemical vapor deposition, phosphorous silicate glass, borophosphorous glass, spin on glass, and silicon nitride.

Claim 37

Independent Claim 66 words

A method for manufacturing a layer of undoped silicate glass on the surface of a semiconductor wafer, comprising: providing a semiconductor wafer, wherein the surface of said wafer has contaminants thereon; exposing the surface of the wafer to at least one of vacuum ultraviolet radiation and ultraviolet radiation sufficient to remove contaminants from said surface; and depositing on said surface, a layer of undoped silicate glass.

Claim 38

Independent Claim 66 words

A method for manufacturing a layer of undoped silicate glass on the surface of a semiconductor wafer, comprising: providing a semiconductor wafer, wherein the surface of said wafer has contaminants thereon; exposing the surface of the wafer to at least one of vacuum ultraviolet radiation and ultraviolet radiation sufficient to remove contaminants from said surface; and depositing on said surface, a layer of undoped silicate glass.

Claim 39

Dependent Claim 31 words

The method of either claim 24 or claim 26, wherein the undoped silicate glass is manufactured using tetraethylorthosilicate and ozone in one of a transport polymerization and chemical vapor deposition process.

Claim 40

Dependent Claim 21 words

The method of claim 27, wherein the percentage of ozone to oxygen is between about 0 and about 18% by volume.

Claim 41

Dependent Claim 20 words

The method of claim 27, wherein the percentage of ozone to oxygen is between about 0.5 and 8% by volume.

Claim 42

Dependent Claim 20 words

The method of claim 27, wherein the percentage of ozone to oxygen is between about 1% and 5% by volume.

Claim 43

Dependent Claim 20 words

The method of claim 27, wherein the flow rate of tetraethylorthosilicate is from about 0.05 gm/minute to about 1.5 gm/minute.

Claim 44

Dependent Claim 15 words

The method of claim 27, wherein the flow rate of tetraethylorthosilicate is about 0.18 gm/min.

Claim 45

Dependent Claim 26 words

The method of claim 27, wherein the thermal chemical vapor deposition process is carried out at a temperature between about 100° C. and about 600° C.

Claim 46

Dependent Claim 22 words

The method of claim 27, wherein the thermal chemical vapor deposition process is carried out at a temperature of about 400° C.

Claim 47

Dependent Claim 14 words

The method of claim 26, wherein the layer of undoped silicate glass is conformal.

Claim 48

Independent Claim 40 words

A method for reducing the surface sensitivity of a semiconductor wafer, comprising: providing a semiconductor substrate comprising dielectric material; and exposing the surface of the wafer to electromagnetic radiation sufficient to permit subsequent deposition of an undoped silicate glass layer.

Claim 49

Independent Claim 40 words

A method for reducing the surface sensitivity of a semiconductor wafer, comprising: providing a semiconductor substrate comprising dielectric material; and exposing the surface of the wafer to electromagnetic radiation sufficient to permit subsequent deposition of an undoped silicate glass layer.

Claim 50

Dependent Claim 49 words

The method of claim 36, wherein the dielectric material is selected from the group consisting of thermal oxide, silicon dioxide deposited by plasma enhanced chemical vapor deposition, silicon dioxide deposited by high density plasma enhanced chemical vapor deposition, phosphorous silicate glass, borophosphorous glass, spin on glass, and silicon nitride.

Claim 51

Dependent Claim 26 words

The method of claim 36, wherein the undoped silicate glass layer has a root mean square deviation from planarity is no greater than about 10 Å.

Claim 52

Dependent Claim 18 words

The method of claim 36, wherein the undoped silicate glass layer is a TEOS ozone based oxide layer.

Claim 53

Dependent Claim 23 words

The method of claim 36, wherein the root mean square of the deviation from planarity is between about 2 and about 8 Å.

Claim 54

Independent Claim 75 words

A method for manufacturing an integrated circuit, comprising: providing semiconductor device structures on a semiconductor substrate; providing conducting lines overlying said semiconductor device structures wherein a gap is formed between said conducting lines; providing a dielectric layer on the surfaces of said substrate wherein said gap remains between said conducting lines; treating said dielectric layer with electromagnetic radiation to decrease the surface sensitivity of said dielectric layer; and filling said gap with undoped silicate glass.

Claim 55

Independent Claim 75 words

A method for manufacturing an integrated circuit, comprising: providing semiconductor device structures on a semiconductor substrate; providing conducting lines overlying said semiconductor device structures wherein a gap is formed between said conducting lines; providing a dielectric layer on the surfaces of said substrate wherein said gap remains between said conducting lines; treating said dielectric layer with electromagnetic radiation to decrease the surface sensitivity of said dielectric layer; and filling said gap with undoped silicate glass.

Claim 56

Dependent Claim 51 words

The method of claim 41, wherein the dielectric layer is a material selected from the group consisting of thermal oxide, silicon dioxide deposited by plasma enhanced chemical vapor deposition, silicon dioxide deposited by high density plasma enhanced chemical vapor deposition, phosphorous silicate glass, borophosphorous glass, spin on glass, and silicon nitride.

Claim 57

Dependent Claim 30 words

The method of claim 26 wherein the rate of deposition of undoped silicate glass film on thermal oxide is between about 500 Å per minute and 5000 Å per minute.

Claim 58

Dependent Claim 31 words

The method of claim 26 wherein the rate of deposition of undoped silicate glass film on thermal oxide is between about 1000 Å per minute and about 2000 Å per minute.

Claim 59

Dependent Claim 24 words

The method of claim 26 wherein the rate of deposition of undoped silicate glass film on thermal oxide is about 1500 Å per minute.

Claim 60

Independent Claim 31 words

A method of post-conditioning a pre-treated dielectric layer comprising; providing a pre-treated dielectric layer; and exposing said pre-treated dielectric layer using a moiety which protects said pre-treated dielectric layer from contamination.

Claim 61

Independent Claim 31 words

A method of post-conditioning a pre-treated dielectric layer comprising; providing a pre-treated dielectric layer; and exposing said pre-treated dielectric layer using a moiety which protects said pre-treated dielectric layer from contamination.

Claim 62

Dependent Claim 50 words

The method of claim 46, wherein said moiety is selected from the group consisting of ammonia, chlorine, HCl, F 2 , SF 6 , a chlorofluorocarbon, Br 2 , O 2 , H 2 , HF, H 2 SO 4 , ClSO 3 , and H 2 O 2 .

Claim 63

Independent Claim 66 words

A method for preparing a semiconductor wafer, comprising: placing said wafer in a chamber having a moiety capable of emitting electromagnetic radiation of at least one of vacuum ultraviolet wavelengths and ultraviolet wavelengths into said chamber; and exposing said moiety to an electric field sufficient to generate at least one of vacuum ultraviolet and ultraviolet radiation from said moiety; thereby exposing the wafer to said radiation.

Claim 64

Independent Claim 66 words

A method for preparing a semiconductor wafer, comprising: placing said wafer in a chamber having a moiety capable of emitting electromagnetic radiation of at least one of vacuum ultraviolet wavelengths and ultraviolet wavelengths into said chamber; and exposing said moiety to an electric field sufficient to generate at least one of vacuum ultraviolet and ultraviolet radiation from said moiety; thereby exposing the wafer to said radiation.

Claim 65

Dependent Claim 20 words

The method of claim 48, wherein the step of placing said wafer in said chamber comprises using a lock loader.

Claim 66

Dependent Claim 13 words

The method of claim 12, wherein said chuck is moveable in three dimensions.

Claim 67

Independent Claim 47 words

A method for preparing the surface of a semiconductor wafer with a layer of dielectric material, comprising exposing the surface of the wafer to electromagnetic radiation having a wavelength between about 60 nanometers and about 550 nanometers sufficient to reduce the surface sensitivity of said semiconductor surface.

Claim 68

Independent Claim 47 words

A method for preparing the surface of a semiconductor wafer with a layer of dielectric material, comprising exposing the surface of the wafer to electromagnetic radiation having a wavelength between about 60 nanometers and about 550 nanometers sufficient to reduce the surface sensitivity of said semiconductor surface.

Claim 69

Independent Claim 43 words

A method for preparing the surface of a semiconductor wafer to reduce surface sensitivity, comprising exposing the surface of the wafer to electromagnetic radiation having a wavelength between about 60 nanometers and about 550 nanometers sufficient to remove contaminants from said semiconductor surface.

Claim 70

Independent Claim 43 words

A method for preparing the surface of a semiconductor wafer to reduce surface sensitivity, comprising exposing the surface of the wafer to electromagnetic radiation having a wavelength between about 60 nanometers and about 550 nanometers sufficient to remove contaminants from said semiconductor surface.

Claim 71

Independent Claim 80 words

A method for preparing a semiconductor wafer to reduce surface sensitivity, comprising: placing said wafer on a chuck in a chamber which does not contain a gas capable of absorbing electromagnetic radiation; and exposing said wafer to electromagnetic radiation having a wavelength in the range of about 60 nm to about 550 nm derived from one of an excimer lamp, a dielectric barrier discharge apparatus and a open excimer apparatus for sufficient time to substantially remove contaminants from said surface.

Claim 72

Independent Claim 80 words

A method for preparing a semiconductor wafer to reduce surface sensitivity, comprising: placing said wafer on a chuck in a chamber which does not contain a gas capable of absorbing electromagnetic radiation; and exposing said wafer to electromagnetic radiation having a wavelength in the range of about 60 nm to about 550 nm derived from one of an excimer lamp, a dielectric barrier discharge apparatus and a open excimer apparatus for sufficient time to substantially remove contaminants from said surface.

Claim 73

Independent Claim 70 words

An apparatus for preparing the surface of a semiconductor wafer, comprising: a chamber; a chuck in said chamber for holding a semiconductor wafer; a source for providing at least one of vacuum ultraviolet radiation and ultraviolet radiation within said chamber relative to said chuck; an inlet port for introducing gas into the chamber; an exhaust port for evacuating the chamber; and a pump to decrease the pressure in said chamber.

Claim 74

Independent Claim 70 words

An apparatus for preparing the surface of a semiconductor wafer, comprising: a chamber; a chuck in said chamber for holding a semiconductor wafer; a source for providing at least one of vacuum ultraviolet radiation and ultraviolet radiation within said chamber relative to said chuck; an inlet port for introducing gas into the chamber; an exhaust port for evacuating the chamber; and a pump to decrease the pressure in said chamber.

Claim 75

Dependent Claim 31 words

A semiconductor wafer having a surface prepared by exposing said surface to electromagnetic radiation having a wavelength between about 60 nanometers and about 550 nanometers sufficient to reduce the surface sensitivity.

Claim 76

Dependent Claim 31 words

A semiconductor wafer having a surface prepared by exposing said surface to electromagnetic radiation having a wavelength between about 60 nanometers and about 550 nanometers sufficient to reduce the surface sensitivity.

Claim 77

Independent Claim 32 words

A method for reducing the surface sensitivity of a semiconductor wafer, comprising exposing a surface of the wafer to electromagnetic radiation sufficient to permit subsequent deposition of an undoped silicate glass layer.

Claim 78

Independent Claim 32 words

A method for reducing the surface sensitivity of a semiconductor wafer, comprising exposing a surface of the wafer to electromagnetic radiation sufficient to permit subsequent deposition of an undoped silicate glass layer.

Claim 79

Independent Claim 36 words

A method for reducing the surface sensitivity of a semiconductor wafer having a dielectric material, comprising exposing a surface of the wafer to electromagnetic radiation sufficient to permit subsequent deposition of an undoped silicate glass layer.

Claim 80

Independent Claim 36 words

A method for reducing the surface sensitivity of a semiconductor wafer having a dielectric material, comprising exposing a surface of the wafer to electromagnetic radiation sufficient to permit subsequent deposition of an undoped silicate glass layer.

Claim 81

Dependent Claim 19 words

The apparatus of claim 15, wherein the source of the vacuum ultraviolet radiation is derived from dielectric barrier discharge.

Claim 82

Dependent Claim 17 words

The apparatus of claim 15, wherein the source of the vacuum ultraviolet radiation is an excimer apparatus.

Claim 83

Independent Claim 79 words

An apparatus for preparing the surface of a semiconductor wafer, comprising: a chamber; a heated chuck in said chamber for holding a semiconductor wafer, wherein said chuck is moveable in three dimensions; a source for providing at least one of vacuum ultraviolet radiation and ultraviolet radiation within said chamber relative to said chuck; an inlet port for introducing gas into the chamber; an exhaust port for evacuating the chamber; and a pump to decrease the pressure in said chamber.

Claim 84

Independent Claim 79 words

An apparatus for preparing the surface of a semiconductor wafer, comprising: a chamber; a heated chuck in said chamber for holding a semiconductor wafer, wherein said chuck is moveable in three dimensions; a source for providing at least one of vacuum ultraviolet radiation and ultraviolet radiation within said chamber relative to said chuck; an inlet port for introducing gas into the chamber; an exhaust port for evacuating the chamber; and a pump to decrease the pressure in said chamber.

Claim 85

Independent Claim 64 words

An apparatus for preparing the surface of a semiconductor wafer, comprising: a chamber; a chuck in said chamber for holding a semiconductor wafer; a source for providing vacuum ultraviolet radiation radiation within said chamber relative to said chuck; an inlet port for introducing gas into the chamber; an exhaust port for evacuating the chamber; and a pump to decrease the pressure in said chamber.

Claim 86

Independent Claim 64 words

An apparatus for preparing the surface of a semiconductor wafer, comprising: a chamber; a chuck in said chamber for holding a semiconductor wafer; a source for providing vacuum ultraviolet radiation radiation within said chamber relative to said chuck; an inlet port for introducing gas into the chamber; an exhaust port for evacuating the chamber; and a pump to decrease the pressure in said chamber.

Annuity Stage	Window Opens	Payment Deadline	Surcharge Period Until	Estimated Fee	Status
3.5 Years (Year 4)	2003-01-17	2003-07-19	2004-01-18	$2000.00	Window Closed / Lapsed
7.5 Years (Year 8)	2007-01-17	2007-07-19	2008-01-18	$3760.00	Window Closed / Lapsed
11.5 Years (Year 12)	2011-01-17	2011-07-19	2012-01-18	$7700.00	Window Closed / Lapsed

Surface modification of semiconductors using electromagnetic radiation

Abstract

Inventors

Bibliographic Details

Claims Analysis

References Cited (Backward Citations)

USPTO Annuity & Maintenance Windows

Assigned Categories & Tags

Assign Category Tag