US6011290A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Short channel length MOSFET transistor
Assignee: GlobalFoundries Inc
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Filing: 1998-01-20
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Granted: 2000-01-04
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Expires: 2018-01-20
Abstract
Abstract A semiconductor device is formed from a semiconductor substrate with a source and drain and a gate disposed thereon. The gate has a stepped profile with side portions with respective walls adjacent a respective one of the source and drain. The side portions of the gate are thinner than that of a center portion of the gate. The substrate is implanted with nitrogen forming first regions below the side portions of the gate and adjacent the surface of the substrate. The source and drain are implanted with nitrogen in second regions adjacent the side portions of the gate and spaced away from the surface of the substrate. The substrate is doped so that regions of the substrate lying above the second regions and to the side of the first regions are heavily doped, wherein the first and second regions implanted with nitrogen resist the doping.
Inventors
- 👤 Mark I. Gardner
- 👤 H. Jim Fulford
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-01 22:23
CPC Classifications
H; H10; H10P; H10P30/00; H10P30/20; H10P30/202; H10P30/204; H10D; H10D30/00; H10D30/01; H10D30/021; H10D30/0223; H10D30/0227; H10D30/0229; H10D64/00; H10D64/01; H10D64/013; H10D64/01302; H10D64/01304; H10D64/01324; H10D64/20; H10D64/27; H10D64/311; H10D64/411; H10D64/511; H10D64/517; H10D64/518; H10P30/208; H10P30/22
Claims Analysis
Total Claims: 22
Claim 1
Independent Claim
160 words
A semiconductor device comprising: a semiconductor substrate with a source and drain formed therein and a gate disposed thereon, the gate comprising a center portion, and a base portion, said base portion having a side portion that extends outwardly from said center portion and has a wall adjacent one of the source and drain, the side portion being thinner than that of another portion of the gate; at least one first region below the side portion of the gate and adjacent the surface of the substrate having nitrogen implanted therein, and at least one second region within the source or drain adjacent the at least one side portion having nitrogen implanted therein, the second region being spaced away from the surface of the substrate; and a region of the substrate lying above the second region and to the side of the first region being heavily doped, and wherein the first and second regions implanted with nitrogen are not heavily doped.
Claim 2
Dependent Claim
160 words
A semiconductor device comprising: a semiconductor substrate with a source and drain formed therein and a gate disposed thereon, the gate comprising a center portion, and a base portion, said base portion having a side portion that extends outwardly from said center portion and has a wall adjacent one of the source and drain, the side portion being thinner than that of another portion of the gate; at least one first region below the side portion of the gate and adjacent the surface of the substrate having nitrogen implanted therein, and at least one second region within the source or drain adjacent the at least one side portion having nitrogen implanted therein, the second region being spaced away from the surface of the substrate; and a region of the substrate lying above the second region and to the side of the first region being heavily doped, and wherein the first and second regions implanted with nitrogen are not heavily doped.
Claim 3
Dependent Claim
13 words
The device of claim 1 further wherein the gate is formed of polysilicon.
Claim 4
Dependent Claim
18 words
The device of claim 2 further wherein nitrogen is not implanted beneath the center portion of the gate.
Claim 5
Dependent Claim
15 words
The device of claim 1 further wherein the heavily doped regions are doped with P+.
Claim 6
Dependent Claim
13 words
The device of claim 4 further wherein the P+ is a boron dopant.
Claim 7
Dependent Claim
40 words
The device of claim 1 further wherein the base portion of said gate has a side portion on each side, each side portion extending outwardly from said center portion, and wherein each side portion is thinner than the center portion.
Claim 8
Dependent Claim
34 words
A semiconductor device, according to claim 6, wherein the center portion of the gate includes a top surface having a width that is narrower than a width of the base including the side portion.
Claim 9
Dependent Claim
19 words
A semiconductor device, according to claim 7, further including a salicide contact at the top surface of the gate.
Claim 10
Dependent Claim
21 words
A semiconductor device, according to claim 8, wherein said at least one first region includes a region under each side portion.
Claim 11
Dependent Claim
19 words
A semiconductor device, according to claim 9, further including a salicide contact at the top surface of the gate.
Claim 12
Dependent Claim
34 words
A semiconductor device, according to claim 1, wherein the center portion of the gate includes a top surface having a width that is narrower than a width of the base including the side portion.
Claim 13
Dependent Claim
19 words
A semiconductor device, according to claim 11, further including a salicide contact at the top surface of the gate.
Claim 14
Dependent Claim
164 words
An information handling system including a device comprising: a semiconductor substrate with a source and drain formed therein and a gate disposed thereon, the gate comprising a center portion and a base portion, said base portion having a side portion that extends outwardly from said center portion and has a wall adjacent one of the source or drain, the side portion being thinner than that of another portion of the gate; at least one first region below the side portion of the gate and adjacent the surface of the substrate having nitrogen implanted therein, and at least one second region within the source or drain adjacent the at least one side portion having nitrogen implanted therein, the second region being spaced away from the surface of the substrate; and a region of the substrate lying above the second region and to the side of the first region being heavily doped, and wherein the first and second regions implanted with nitrogen are not heavily doped.
Claim 15
Dependent Claim
164 words
An information handling system including a device comprising: a semiconductor substrate with a source and drain formed therein and a gate disposed thereon, the gate comprising a center portion and a base portion, said base portion having a side portion that extends outwardly from said center portion and has a wall adjacent one of the source or drain, the side portion being thinner than that of another portion of the gate; at least one first region below the side portion of the gate and adjacent the surface of the substrate having nitrogen implanted therein, and at least one second region within the source or drain adjacent the at least one side portion having nitrogen implanted therein, the second region being spaced away from the surface of the substrate; and a region of the substrate lying above the second region and to the side of the first region being heavily doped, and wherein the first and second regions implanted with nitrogen are not heavily doped.
Claim 16
Dependent Claim
40 words
The device of claim 13 further wherein the base portion of said gate has a side portion on each side, each side portion extending outwardly from said center portion, and wherein each side portion is thinner than the center portion.
Claim 17
Dependent Claim
18 words
The device of claim 14 further wherein nitrogen is not implanted beneath the center portion of the gate.
Claim 18
Dependent Claim
13 words
The device of claim 13 further wherein the gate is formed of polysilicon.
Claim 19
Dependent Claim
35 words
An information handling system, according to claim 13, wherein the center portion of the gate includes a top surface having a width that is narrower than a width of the base including the side portions.
Claim 20
Dependent Claim
20 words
An information handling system, according to claim 17, further including a salicide contact at the top surface of the gate.
Claim 21
Dependent Claim
22 words
An information handling system, according to claim 18, wherein said at least one first region includes a region under each side portion.
Claim 22
Dependent Claim
27 words
An information handling system, according to claim 19, wherein said at least one second regions includes a region within the source and another region with the drain.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2003-01-03 | 2003-07-05 | 2004-01-04 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2007-01-03 | 2007-07-05 | 2008-01-04 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2011-01-03 | 2011-07-05 | 2012-01-04 | $7700.00 | Window Closed / Lapsed |