Semiconductor device having MOS transistor with nitrogen doping

Claim 2

An MOS transistor, comprising: a pair of source/drain regions formed on a main surface of a semiconductor substrate so as to sandwich a channel region; a gate electrode formed on the main surface of said semiconductor substrate positioned between said pair of source/drain regions with a gate insulating film interposed therebetween; and a sidewall oxide film formed in contact with a side surface of said gate electrode, a side surface of said gate insulating film, and the main surface of said semiconductor substrate and having nitrogen introduced therein, so that a concentration distribution of said nitrogen in a section in the direction perpendicular to the main surface of said semiconductor substrate has a first concentration peak at an interface between said sidewall oxide film and the main surface of said semiconductor substrate, and a second concentration peak positioned closer to said sidewall oxide film than said first concentration peak positioned at the interface between said sidewall oxide film and the main surface of said semiconductor substrate.

Claim 3

The MOS transistor according to claim 1, wherein the concentration distribution of said nitrogen introduced in said sidewall oxide film in a section parallel to the main surface of said semiconductor substrate has a second peak at an interface between said sidewall oxide film and the side surface of said gate electrode.

Claim 4

An MOS transistor, comprising: a pair of source/drain regions formed on a main surface of a semiconductor substrate so as to sandwich a channel region; a gate electrode formed on the main surface of said semiconductor substrate positioned between said pair of source/drain regions with a gate insulating film interposed therebetween; and a sidewall having an oxide film having a perpendicular portion in contact with a side surface of said gate electrode and a side surface of said gate insulating film, and a bottom portion in contact with the main surface of said semiconductor substrate, with its longitudinal section approximately L-letter shaped, and a polysilicon film constituting a sidewall formed in contact with the perpendicular portion and the bottom portion of said oxide film and having nitrogen introduced therein, so that a first nitrogen concentration peak is positioned at an interface between the polysilicon film and said oxide film and a second nitrogen concentration peak is positioned closer to an upper portion of the polysilicon film than the first nitrogen concentration peak.

Claim 5

An MOS transistor, comprising: a pair of source/drain regions formed on a main surface of a semiconductor substrate so as to sandwich a channel region; a gate electrode formed on the main surface of said semiconductor substrate positioned between said pair of source/drain regions with a gate insulating film interposed therebetween; and a sidewall having an oxide film having a perpendicular portion in contact with a side surface of said gate electrode and a side surface of said gate insulating film, and a bottom portion in contact with the main surface of said semiconductor substrate, with its longitudinal section approximately L-letter shaped, and a polysilicon film constituting a sidewall formed in contact with the perpendicular portion and the bottom portion of said oxide film and having nitrogen introduced therein, so that a first nitrogen concentration peak is positioned at an interface between the polysilicon film and said oxide film and a second nitrogen concentration peak is positioned closer to an upper portion of the polysilicon film than the first nitrogen concentration peak.

Claim 6

The MOS transistor according to claim 3, wherein nitrogen is also introduced in the oxide film of said sidewall.

Claim 7

An MOS transistor, comprising: a pair of source/drain regions formed on a main surface of a semiconductor substrate so as to sandwich a channel region and having nitrogen in addition to impurities of a first conductivity type introduced therein; a gate electrode formed on the main surface of said semiconductor substrate positioned between said pair of source/drain regions with a gate insulating film interposed therebetween and having nitrogen introduced therein; and a sidewall oxide film formed in contact with a side surface of said gate electrode, a side surface of said gate insulating film, and the main surface of said semiconductor substrate and having nitrogen introduced therein.

Claim 8

An MOS transistor, comprising: a pair of source/drain regions formed on a main surface of a semiconductor substrate so as to sandwich a channel region and having nitrogen in addition to impurities of a first conductivity type introduced therein; a gate electrode formed on the main surface of said semiconductor substrate positioned between said pair of source/drain regions with a gate insulating film interposed therebetween and having nitrogen introduced therein; and a sidewall oxide film formed in contact with a side surface of said gate electrode, a side surface of said gate insulating film, and the main surface of said semiconductor substrate and having nitrogen introduced therein.

Claim 9

The MOS transistor according to claim 5, wherein a concentration distribution of said nitrogen introduced in the oxide film of said sidewall in a section perpendicular to the main surface of said semiconductor substrate has a peak at an interface between said sidewall oxide film and the main surface of said semiconductor substrate.

Claim 10

The MOS transistor according to claim 1, wherein said pair source/drain regions are formed of low impurity concentration diffusion regions in contact with said channel region at their end portions, and high impurity concentration diffusion regions positioned outside of said channel region and structured integrally with said low impurity concentration diffusion regions.

Claim 11

A semiconductor device including an N channel type MOS transistor and a P channel type MOS transistor, wherein said N channel type MOS transistor includes a pair of first N type source/drain regions formed on a main surface of a semiconductor substrate so as to sandwich a first channel region, a first gate electrode formed on the main surface of said semiconductor substrate positioned between said pair of first source/drain regions with a first gate insulating film interposed therebetween, and a first sidewall oxide film formed in contact with a side surface of said first gate electrode, a side surface of said first gate insulating film, and the main surface of said semiconductor substrate and having nitrogen introduced therein, and said P channel type MOS transistor includes a pair of second P type source/drain regions formed on the main surface of said semiconductor substrate so as to sandwich a second channel region, a second gate electrode formed on the main surface of said semiconductor substrate positioned between said pair of second source/drain regions with a second gate insulating film interposed therebetween, and a second sidewall oxide film formed in contact with a side surface of said second gate electrode, a side surface of said second gate insulating film, and the main surface of said semiconductor substrate and having nitrogen introduced therein.

Claim 12

A semiconductor device including an N channel type MOS transistor and a P channel type MOS transistor, wherein said N channel type MOS transistor includes a pair of first N type source/drain regions formed on a main surface of a semiconductor substrate so as to sandwich a first channel region, a first gate electrode formed on the main surface of said semiconductor substrate positioned between said pair of first source/drain regions with a first gate insulating film interposed therebetween, and a first sidewall oxide film formed in contact with a side surface of said first gate electrode, a side surface of said first gate insulating film, and the main surface of said semiconductor substrate and having nitrogen introduced therein, and said P channel type MOS transistor includes a pair of second P type source/drain regions formed on the main surface of said semiconductor substrate so as to sandwich a second channel region, a second gate electrode formed on the main surface of said semiconductor substrate positioned between said pair of second source/drain regions with a second gate insulating film interposed therebetween, and a second sidewall oxide film formed in contact with a side surface of said second gate electrode, a side surface of said second gate insulating film, and the main surface of said semiconductor substrate and having nitrogen introduced therein.

Claim 13

The semiconductor device according to claim 8, wherein a concentration distribution of said nitrogen introduced in said first and second sidewall oxide films in a section perpendicular to the main surface of said semiconductor substrate has a peak at an interface between the main surface of said semiconductor substrate and said first and second sidewall oxide films.

Claim 14

The semiconductor device according to claim 8, wherein metal silicide layers are formed on said first gate electrode, said pair of first source/drain region, said second gate electrode, and said pair of second source/drain regions, respectively.

Claim 15

The semiconductor device according to claim 8, wherein said pair of first source/drain regions of the N channel type MOS transistor respectively includes low impurity concentration diffusion regions in contact with said first channel region at their end portions, and high impurity concentration diffusion regions positioned outside of said first channel region and structured integrally with said low impurity concentration diffusion regions.

Claim 16

The MOS transistor according to claim 1, wherein the first peak nitrogen concentration ranges from 1×10 19 atoms/cm 3 ˜1×10 21 atoms/cm 3 .

Claim 17

The MOS transistor according to claim 6, wherein the peak nitrogen concentration ranges from 1×10 19 atoms/cm 3 ˜1×10 21 atoms/cm 3 .

Claim 18

The semiconductor device according to claim 9, wherein the peak nitrogen concentration ranges from 1×10 19 atoms/cm 3 ˜1×10 21 atoms/cm 3 .