Manufacture of semiconductor device

Abstract

Abstract PURPOSE:To increase operating speed, to reduce leakage and to inhibit a latch-up by forming a high resistance layer under sections as the source-drain regions of a MOS transistor and shaping the source-drain regions by epitaxial- grown epitaxial layers. CONSTITUTION:An insulating film 2 is formed onto a semiconductor substrate 1, and polysilicon 3 is patterned on the insulating film 2. The ions of phosphorus or arsenic are implanted selectively, thus shaping N<-> layers 4. Spacers 5 are formed onto the side faces of polysilicon. The semiconductor substrate 1 is etched selectively to shape trenches 6. The ions of nitrogen or oxygen are implanted to the trenches, thus forming high resistors 7. Epitaxial layers 8 are grown while adding phosphorus or arsenic onto the high resistance layers 7. Accordingly, there are the high resistance layers 7 having a small dielectric under the epitaxial layer 8, thus increasing operating speed, then reducing leakage, provided that the generation of a latch-up is prevented.

Inventors

• 👤 Masanori Aida
• 👤 合田　雅宣

Bibliographic Details