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US6011261A
Expired / Lapsed
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Probe formed of mono-crystalline SI, the manufacturing method thereof, and an information processing device using the probe
Assignee: Canon Inc
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Filing: 1998-03-04
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Granted: 2000-01-04
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Expires: 2018-03-04
Abstract
Abstract A probe for detecting minute physical behavior comprises a lever member, particularly in the form of a cantilever, formed of a monocrystalline silicon layer and a tip in the form of one-end-supported beam which is bowed and formed upon the lever member. The probe is manufactured by forming a film of a material with low density and high elasticity on the silicon layer of an SOI substrate, then oxidizing part of the silicon layer and removing the oxidized portion to form a tip with the material as a so-called bird's beak, and finally the SOI substrate is worked to form the cantilever shape of the lever member. The probe can be used for an information recording/reproducing device with good traceability even in high speed scanning over a recording medium.
Inventors
- 👤 Tsutomu Ikeda
- 👤 Takayuki Yagi
- 👤 Yasuhiro Shimada
- 👤 Takeo Yamazaki
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 18:44
CPC Classifications
G; G01; G01Q; G01Q60/00; G01Q60/24; G01Q60/38; G01Q60/40; G01Q60/02; G01Q60/04; Y; Y10; Y10S; Y10S977/00; Y10S977/84; Y10S977/849; Y10S977/86; Y10S977/875
Claims Analysis
Total Claims: 15
Claim 1
Independent Claim
35 words
A probe for detecting minute physical behavior, comprising: a lever member formed of a mono-crystalline Si layer; and a tip in the form of one-end-supported beam which is bowed and formed upon said lever member.
Claim 2
Dependent Claim
35 words
A probe for detecting minute physical behavior, comprising: a lever member formed of a mono-crystalline Si layer; and a tip in the form of one-end-supported beam which is bowed and formed upon said lever member.
Claim 3
Dependent Claim
21 words
The probe according to claim 1, wherein said tip is either formed of electroconductive material, or is coated with electroconductive material.
Claim 4
Dependent Claim
26 words
The probe according to claim 2, wherein said electroconductive material coating is coated onto a material with lower density and higher elasticity than said electroconductive material.
Claim 5
Dependent Claim
21 words
The probe according to claim 3, wherein said material with lower density and higher elasticity is silicon nitride or carbon nitride.
Claim 6
Dependent Claim
23 words
The probe according to claim 2, wherein said electroconductive material is a material which has a melting point of 1,000° C. or higher.
Claim 7
Dependent Claim
18 words
The probe according to claim 1, wherein said mono-crystalline Si layer is 0.01 Ω·cm or lower in resistance.
Claim 8
Dependent Claim
16 words
The probe according to claim 1, wherein wiring is formed to the edge of said cantilever.
Claim 9
Dependent Claim
13 words
The probe according to claim 1, wherein said lever member is a cantilever.
Claim 10
Dependent Claim
58 words
An information recording/reproducing device which uses a probe to perform recording and/or reproducing of information to and/or from a recording medium, said information recording/reproducing device comprising: the probe according to any of the claims 1 through 6; and means for applying voltage between said probe and recording medium facing said probe, and performing recording and/or reproducing of information.
Claim 11
Independent Claim
73 words
A method for manufacturing a probe for detecting minute physical behavior, comprising the following steps: a step for forming a film of a material with low density and high elasticity on an Si layer of an SOI substrate; a step for oxidizing part of said Si; a step for removing said oxidized portion and forming a tip; and a step for working said SOI substrate and forming a lever member supporting said tip.
Claim 12
Independent Claim
73 words
A method for manufacturing a probe for detecting minute physical behavior, comprising the following steps: a step for forming a film of a material with low density and high elasticity on an Si layer of an SOI substrate; a step for oxidizing part of said Si; a step for removing said oxidized portion and forming a tip; and a step for working said SOI substrate and forming a lever member supporting said tip.
Claim 13
Dependent Claim
11 words
The method according to claim 10, wherein said oxidization is heat-oxidizing.
Claim 14
Dependent Claim
13 words
The method according to claim 10, wherein said lever member is a cantilever.
Claim 15
Dependent Claim
21 words
The method according to claim 10, wherein said material with lower density and higher elasticity is silicon nitride or carbon nitride.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2003-01-03 | 2003-07-05 | 2004-01-04 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2007-01-03 | 2007-07-05 | 2008-01-04 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2011-01-03 | 2011-07-05 | 2012-01-04 | $7700.00 | Window Closed / Lapsed |