← Back to Patent Explorer
US5811017A Expired / Lapsed US ⏱️ 0.0 years remaining

Cantilever for use in a scanning probe microscope and method of manufacturing the same

Assignee: Olympus Corp
•
Filing: 1996-05-14
•
Granted: 1998-09-22
•
Expires: 2016-05-14
📄 Original PDF 🌐 Google Patents 🔄 Sync Now

Abstract

Abstract A composite silicon-on-insulator substrate comprises first and second substrates and an oxide film interposed between them. The second substrate is partially removed, such that a lever-base section is formed. An oxide film is formed on the sides of the lever-base section. The second substrate has its thickness set to a predetermined value by wet anisotropic etching, such that a pre-lever section is formed and such that a probe-base section is formed at one end of the pre-lever section. An oxide film is formed on the pre-lever section and the probe-base section, such that a lever section with a desired thickness and a probe section with a sharpened tip are formed. A part of the first substrate is etched away, such that a support section is formed. The oxide film covering the lever section and the probe section is removed.

Inventors

  • 👤 Katsuhiro Matsuyama

Bibliographic Details

Application Number —
Jurisdiction US
Data Source google_patents
Last Synchronized 2026-11-09 19:32
CPC Classifications
G; G01; G01Q; G01Q60/00; G01Q60/24; G01Q60/38

Claims Analysis

Total Claims: 16
Claim 1
Independent Claim 204 words
A method of manufacturing a cantilever for use in a scanning probe microscope, comprising a support section, a lever section extending from the support section, and a probe section provided at a free end of the lever section, said method comprising the steps of: preparing a composite silicon-on-insulator substrate which includes first and second semiconductor substrates and an intermediate oxide film interposed between the first and second semiconductor substrates; removing a part of the second semiconductor substrate until the intermediate oxide film is exposed, such that a lever-base section is formed, which will be formed into a lever section; forming an oxide film on sides of the lever-base section; removing the second semiconductor substrate by wet anisotropic etching, reducing a thickness of the second semiconductor substrate so that on the lever-base section a probe-base section is formed, which probe-base section will be formed into a probe section; forming an oxide film on an exposed surface of the second semiconductor substrate by thermal oxidation, such that the lever section and the probe section are formed; removing a part of the first semiconductor substrate, such that a support section is formed; and removing the oxide films from at least the lever section and the probe section.
Claim 2
Independent Claim 204 words
A method of manufacturing a cantilever for use in a scanning probe microscope, comprising a support section, a lever section extending from the support section, and a probe section provided at a free end of the lever section, said method comprising the steps of: preparing a composite silicon-on-insulator substrate which includes first and second semiconductor substrates and an intermediate oxide film interposed between the first and second semiconductor substrates; removing a part of the second semiconductor substrate until the intermediate oxide film is exposed, such that a lever-base section is formed, which will be formed into a lever section; forming an oxide film on sides of the lever-base section; removing the second semiconductor substrate by wet anisotropic etching, reducing a thickness of the second semiconductor substrate so that on the lever-base section a probe-base section is formed, which probe-base section will be formed into a probe section; forming an oxide film on an exposed surface of the second semiconductor substrate by thermal oxidation, such that the lever section and the probe section are formed; removing a part of the first semiconductor substrate, such that a support section is formed; and removing the oxide films from at least the lever section and the probe section.
Claim 3
Dependent Claim 32 words
A method according to claim 1, wherein said lever-base section is triangular, having an apex and a base which correspond to the free end and proximal end of said lever section, respectively.
Claim 4
Dependent Claim 33 words
A method according to claim 2, further comprising a step of removing a part of said lever-base section, such that said lever-base section is formed into a shape corresponding to said lever section.
Claim 5
Dependent Claim 20 words
A method according to claim 3, wherein said lever section comprises a rectangular proximal part and a triangular distal part.
Claim 6
Dependent Claim 20 words
A method according to claim 1, further comprising a step of forming an electrically conductive layer on said lever section.
Claim 7
Dependent Claim 15 words
A method according to claim 5, wherein said electrically conductive layer comprises a piezoresistive layer.
Claim 8
Dependent Claim 25 words
A method according to claim 1, further comprising a step of forming an electrically conductive layer on both said lever section and said probe section.
Claim 9
Dependent Claim 15 words
A method according to claim 7, wherein said electrically conductive layer comprises a piezoresistive layer.
Claim 10
Independent Claim 224 words
A method of manufacturing a cantilever for use in a scanning probe microscope, comprising a support section, a lever section extending from the support section, and a probe section provided at a free end of the lever section, said method comprising the steps of: preparing a composite silicon-on-insulator substrate which includes first and second semiconductor substrates and an intermediate oxide film interposed between the first and second semiconductor substrates; removing a surface portion of the second semiconductor substrate, reducing a thickness of said second semiconductor substrate so that a lever-base section is formed, which lever-base section will be formed into a lever section; removing a part of said second semiconductor substrate until the intermediate oxide film is exposed, and forming an oxide film on sides of the lever-base section; removing the second semiconductor substrate by wet anisotropic etching, reducing a thickness of the second semiconductor substrate so that on the lever-base section a probe-base section is formed, which probe-base section will be formed into a probe section; forming an oxide film on an exposed surface of the second semiconductor substrate by thermal oxidation, such that the lever section and the probe section are formed; removing a part of the first semiconductor substrate, such that a support section is formed; and removing the oxide films from at least the lever section and the probe section.
Claim 11
Independent Claim 224 words
A method of manufacturing a cantilever for use in a scanning probe microscope, comprising a support section, a lever section extending from the support section, and a probe section provided at a free end of the lever section, said method comprising the steps of: preparing a composite silicon-on-insulator substrate which includes first and second semiconductor substrates and an intermediate oxide film interposed between the first and second semiconductor substrates; removing a surface portion of the second semiconductor substrate, reducing a thickness of said second semiconductor substrate so that a lever-base section is formed, which lever-base section will be formed into a lever section; removing a part of said second semiconductor substrate until the intermediate oxide film is exposed, and forming an oxide film on sides of the lever-base section; removing the second semiconductor substrate by wet anisotropic etching, reducing a thickness of the second semiconductor substrate so that on the lever-base section a probe-base section is formed, which probe-base section will be formed into a probe section; forming an oxide film on an exposed surface of the second semiconductor substrate by thermal oxidation, such that the lever section and the probe section are formed; removing a part of the first semiconductor substrate, such that a support section is formed; and removing the oxide films from at least the lever section and the probe section.
Claim 12
Dependent Claim 20 words
A method according to claim 9, wherein said lever section comprises a rectangular proximal part and a triangular distal part.
Claim 13
Dependent Claim 20 words
A method according to claim 9, further comprising a step of forming an electrically conductive layer on said lever section.
Claim 14
Dependent Claim 15 words
A method according to claim 11, wherein said electrically conductive layer comprises a piezoresistive layer.
Claim 15
Dependent Claim 25 words
A method according to claim 9, further comprising a step of forming an electrically conductive layer on both said lever section and said probe section.
Claim 16
Dependent Claim 15 words
A method according to claim 13, wherein said electrically conductive layer comprises a piezoresistive layer.

References Cited (Backward Citations)

US4943719A Cited
US5021364A Cited
US5386110A Cited
US5319961A Cited
US5444244A Cited
US5618760A Cited

USPTO Annuity & Maintenance Windows

Annuity Stage Window Opens Payment Deadline Surcharge Period Until Estimated Fee Status
3.5 Years (Year 4) 2001-09-21 2002-03-23 2002-09-22 $2000.00 Window Closed / Lapsed
7.5 Years (Year 8) 2005-09-21 2006-03-23 2006-09-22 $3760.00 Window Closed / Lapsed
11.5 Years (Year 12) 2009-09-21 2010-03-23 2010-09-22 $7700.00 Window Closed / Lapsed

Assigned Categories & Tags

No categories assigned to this patent yet.

Assign Category Tag