US6010960A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method and system for providing an interconnect having reduced failure rates due to voids
Assignee: Lone Star Silicon Innovations LLC
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Filing: 1997-10-29
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Granted: 2000-01-04
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Expires: 2017-10-29
Abstract
Abstract A system and method for providing an interconnect on a substrate is disclosed. The method and system include providing a first layer, a first barrier layer, and a second layer. The first layer is subject to electromigration and has a thickness. The thickness of the first layer is smaller than what is required to support formation of a void. The first barrier layer is resistant to electromigration. The first barrier layer is disposed between the first layer and the second layer. In a second aspect, the method and system include providing a first layer and a first barrier layer. The first layer is subject to electromigration and has a thickness. The thickness of the first layer is smaller than what is required to support formation of a void. The first barrier layer is resistant to electromigration.
Inventors
- 👤 Takeshi Nogami
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-01 23:11
CPC Classifications
H; H10; H10W; H10W20/00; H10W20/01; H10W20/031; H10W20/032; H10W20/033; H10W20/037; H10W20/036; H10W20/056
Claims Analysis
Total Claims: 23
Claim 1
Independent Claim
98 words
A method for providing an interconnect on a substrate comprising the steps of: providing a first barrier layer on the substrate; providing a first layer on the first barrier layer, the first layer being subject to electromigration, the first layer having a thickness, the thickness of the first layer being smaller than required to support formation of a void; providing a second barrier layer, the second barrier layer being resistant to electromigration; and providing a second layer, the second layer being subject to electromigration, the second barrier layer being disposed between the first layer and the second layer.
Claim 2
Independent Claim
98 words
A method for providing an interconnect on a substrate comprising the steps of: providing a first barrier layer on the substrate; providing a first layer on the first barrier layer, the first layer being subject to electromigration, the first layer having a thickness, the thickness of the first layer being smaller than required to support formation of a void; providing a second barrier layer, the second barrier layer being resistant to electromigration; and providing a second layer, the second layer being subject to electromigration, the second barrier layer being disposed between the first layer and the second layer.
Claim 3
Dependent Claim
23 words
The method of claim 1 wherein the step of providing the first layer further includes the step of providing a first copper layer.
Claim 4
Independent Claim
104 words
A method for providing an interconnect on a substrate comprising the steps of: providing a first layer on the substrate, the first layer being subject to electromigration, the first layer having a thickness, the thickness of the first layer being smaller than required to support formation of a void, the first layer being a first copper layer; providing a first barrier layer, the first barrier layer being resistant to electromigration; and providing a second layer, the second layer being subject to electromigration, the second layer being a second copper layer; the first barrier layer being disposed between the first layer and the second layer.
Claim 5
Independent Claim
104 words
A method for providing an interconnect on a substrate comprising the steps of: providing a first layer on the substrate, the first layer being subject to electromigration, the first layer having a thickness, the thickness of the first layer being smaller than required to support formation of a void, the first layer being a first copper layer; providing a first barrier layer, the first barrier layer being resistant to electromigration; and providing a second layer, the second layer being subject to electromigration, the second layer being a second copper layer; the first barrier layer being disposed between the first layer and the second layer.
Claim 6
Dependent Claim
25 words
The method of claim 3 wherein the step of providing the first copper layer further includes the step of: providing a first doped copper layer.
Claim 7
Dependent Claim
25 words
The method of claim 3 wherein the step of providing the second copper layer further includes the step of: providing a second doped copper layer.
Claim 8
Dependent Claim
25 words
The method of claim 4 wherein the step of providing the second copper layer further includes the step of: providing a second doped copper layer.
Claim 9
Dependent Claim
16 words
The method of claim 6 wherein the first barrier layer further includes cobalt, tungsten, and phosphorus.
Claim 10
Dependent Claim
21 words
The method of claim 7 wherein the thickness of the first layer is less than or equal to approximately 0.1 micron.
Claim 11
Dependent Claim
35 words
The method of claim 8 wherein the step of providing a first barrier layer further includes the step of providing a first barrier layer having a barrier layer thickness of approximately a few hundred Angstroms.
Claim 12
Dependent Claim
28 words
The method of claim 9 further comprising the step of: providing a second barrier layer, the second barrier layer being disposed between the first layer and the substrate.
Claim 13
Independent Claim
77 words
A method for providing an interconnect on a substrate comprising the steps of: providing a first barrier layer on the substrate; providing a first layer on the first barrier layer, the first layer being subject to electromigration, the first layer having a thickness, the thickness of the first layer being smaller than required to support formation of a void; and providing a second barrier layer on the first layer, the second barrier layer being resistant to electromigration.
Claim 14
Independent Claim
77 words
A method for providing an interconnect on a substrate comprising the steps of: providing a first barrier layer on the substrate; providing a first layer on the first barrier layer, the first layer being subject to electromigration, the first layer having a thickness, the thickness of the first layer being smaller than required to support formation of a void; and providing a second barrier layer on the first layer, the second barrier layer being resistant to electromigration.
Claim 15
Dependent Claim
23 words
The method of claim 11 wherein the step of providing the first layer further includes the step of providing a first copper layer.
Claim 16
Independent Claim
76 words
A method for providing an interconnect on a substrate comprising the steps of: providing a first layer on the substrate, the first layer being subject to electromigration, the first layer having a thickness, the thickness of the first layer being smaller than required to support formation of a void, the first layer being a first doped copper layer; and providing a first barrier layer on the first layer, the first barrier layer being resistant to electromigration.
Claim 17
Independent Claim
76 words
A method for providing an interconnect on a substrate comprising the steps of: providing a first layer on the substrate, the first layer being subject to electromigration, the first layer having a thickness, the thickness of the first layer being smaller than required to support formation of a void, the first layer being a first doped copper layer; and providing a first barrier layer on the first layer, the first barrier layer being resistant to electromigration.
Claim 18
Dependent Claim
20 words
The method of claim 13 wherein the step of providing the first barrier layer further includes cobalt, tungsten, and phosphorus.
Claim 19
Dependent Claim
21 words
The method of claim 14 wherein the thickness of the first layer is less than or equal to approximately 0.1 micron.
Claim 20
Dependent Claim
35 words
The method of claim 15 wherein the step of providing a first barrier layer further includes the step of providing a first barrier layer having a barrier layer thickness of approximately a few hundred Angstroms.
Claim 21
Dependent Claim
28 words
The method of claim 16 further comprising the step of: providing a second barrier layer, the second barrier layer being disposed between the first layer and the substrate.
Claim 22
Dependent Claim
51 words
The method of claim 1 wherein the substrate further includes at least one trench therein and wherein a portion of the first barrier layer, a portion of the first layer, a portion of the second barrier layer, and a portion of the second layer are within the at least one trench.
Claim 23
Dependent Claim
45 words
The method of claim 11 wherein the substrate further includes at least one trench therein and wherein a portion of the first barrier layer, a portion of the first layer, and a portion of the second barrier layer are within the at least one trench.
References Cited (Backward Citations)
US4525434A
Cited
US4632806A
Cited
US4985750A
Cited
US4976839A
Cited
US5266526A
Cited
US5572072A
Cited
US5470789A
Cited
US5654232A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2003-01-03 | 2003-07-05 | 2004-01-04 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2007-01-03 | 2007-07-05 | 2008-01-04 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2011-01-03 | 2011-07-05 | 2012-01-04 | $7700.00 | Window Closed / Lapsed |