Method and apparatus for fabricating electroluminescent device

Claim 1

A method of fabricating an electroluminescent device, comprising the steps of: preparing a group II element belonging to one of group IIA and group IIB of the periodic table as a first gaseous source material, preparing a group VIB element belonging to group VIB of the periodic table as a second gaseous source material, both said group II element and said group VIB element acting as host materials of a luminescent layer, and preparing an element acting as a luminescent center as a third gaseous source material; supplying said first gaseous source material into a reaction furnace via a first gas supply passage at a first flow rate; supplying said second gaseous source material into said reaction furnace via a second gas supply passage different from said first gas supply passage, and at a second flow rate that is less than the first flow rate, in such a manner that a stream of said first gaseous source material is surrounded by a stream of said second gaseous source material, wherein a ratio of said first flow rate to said second flow rate is at least approximately 4; supplying said third gaseous source material into said reaction furnace; and causing said first, second and third gaseous source materials to react with each other inside said reaction furnace, whereby said luminescent layer, which is composed of a II-VIB compound and is doped with said element acting as said luminescent center, is formed over an insulating substrate by chemical vapor deposition, wherein a distance between said first gas supply passage and said insulating substrate is shorter than a distance between said second gas supply passage and said insulating substrate.

Claim 2

A method of fabricating an electroluminescent device, comprising the steps of: preparing a group II element belonging to one of group IIA and group IIB of the periodic table as a first gaseous source material, preparing a group VIB element belonging to group VIB of the periodic table as a second gaseous source material, both said group II element and said group VIB element acting as host materials of a luminescent layer, and preparing an element acting as a luminescent center as a third gaseous source material; supplying said first gaseous source material into a reaction furnace via a first gas supply passage at a first flow rate; supplying said second gaseous source material into said reaction furnace via a second gas supply passage different from said first gas supply passage, and at a second flow rate that is less than the first flow rate, in such a manner that a stream of said first gaseous source material is surrounded by a stream of said second gaseous source material, wherein a ratio of said first flow rate to said second flow rate is at least approximately 4; supplying said third gaseous source material into said reaction furnace; and causing said first, second and third gaseous source materials to react with each other inside said reaction furnace, whereby said luminescent layer, which is composed of a II-VIB compound and is doped with said element acting as said luminescent center, is formed over an insulating substrate by chemical vapor deposition, wherein a distance between said first gas supply passage and said insulating substrate is shorter than a distance between said second gas supply passage and said insulating substrate.

Claim 8

A method of fabricating an electroluminescent device, comprising the steps of: preparing a group II element belonging to one of group IIA and group IIB of the periodic table as a first gaseous source material, preparing a group IIIB element belonging to group IIIB of the periodic table as a second gaseous source material, preparing a group VIB element belonging to group VIB of the periodic table as a third gaseous source material, and preparing a luminescent center element as a fourth gaseous source material; and supplying said first, second, third and fourth gaseous source materials into a reaction furnace in which an insulating substrate is located and causing said first, second, third and fourth gaseous source materials to react with each other inside said reaction furnace, whereby a luminescent layer, a host material of which is a II-IIIB-VIB compound of said group II, IIIB and VIB elements, doped with said luminescent center element is formed over said insulating substrate by chemical vapor deposition, wherein said first gaseous source material is introduced into said reaction furnace in a first gas supply passage, said third gaseous source material is introduced into said reaction furnace in a third gas supply passage different from said first gas supply passage, said first, second and third gaseous source materials are introduced into said reaction furnace in such a manner that streams of said first and second gaseous source materials are surrounded by a stream of said third gaseous source material, wherein at least a flow rate of said first gaseous source material for said group II element inside said reaction furnace is made greater than a flow rate of said third gaseous source material for said group VIB element inside said reaction furnace, and wherein a ratio of said flow rate of said first gaseous source material to said flow rate of said third gaseous source material is at least approximately 4, and wherein a distance between said first gas supply passage and said insulating substrate is shorter than a distance between said third gas supply passage and said insulating substrate.

Claim 9

A method of fabricating an electroluminescent device, comprising the steps of: preparing a group II element belonging to one of group IIA and group IIB of the periodic table as a first gaseous source material, preparing a group IIIB element belonging to group IIIB of the periodic table as a second gaseous source material, preparing a group VIB element belonging to group VIB of the periodic table as a third gaseous source material, and preparing a luminescent center element as a fourth gaseous source material; and supplying said first, second, third and fourth gaseous source materials into a reaction furnace in which an insulating substrate is located and causing said first, second, third and fourth gaseous source materials to react with each other inside said reaction furnace, whereby a luminescent layer, a host material of which is a II-IIIB-VIB compound of said group II, IIIB and VIB elements, doped with said luminescent center element is formed over said insulating substrate by chemical vapor deposition, wherein said first gaseous source material is introduced into said reaction furnace in a first gas supply passage, said third gaseous source material is introduced into said reaction furnace in a third gas supply passage different from said first gas supply passage, said first, second and third gaseous source materials are introduced into said reaction furnace in such a manner that streams of said first and second gaseous source materials are surrounded by a stream of said third gaseous source material, wherein at least a flow rate of said first gaseous source material for said group II element inside said reaction furnace is made greater than a flow rate of said third gaseous source material for said group VIB element inside said reaction furnace, and wherein a ratio of said flow rate of said first gaseous source material to said flow rate of said third gaseous source material is at least approximately 4, and wherein a distance between said first gas supply passage and said insulating substrate is shorter than a distance between said third gas supply passage and said insulating substrate.

Claim 19

A method of fabricating an electroluminescent device, comprising the steps of: introducing a first gaseous source material for a group II element which belongs to one of group IIA and group IIB of the periodic table into a reaction furnace where an insulating substrate is disposed via a first gas supply passage; introducing a second gaseous source material for a group VIB element which belongs to group VIB of the periodic table into said reaction furnace via a second gas supply passage different from said first gas supply passage, wherein said first gaseous source material and said second gaseous source material are introduced into said reaction furnace in such a manner that a flow rate of said first gaseous source material inside said reaction furnace is made greater than a flow rate of said second gaseous source material inside said reaction furnace, wherein a ratio of said flow rate of said first gaseous source material to said flow rate of said second gaseous source material is at least approximately 4; introducing a third gaseous source material for an element which acts as a luminescent center into said reaction furnace; and causing said first, second and third gaseous source materials to react with each other inside said reaction furnace, whereby a luminescent layer, which is composed of a II-VIB compound and is doped with said element acting as said luminescent center, is formed over said insulating substrate by chemical vapor deposition, wherein a distance between said first gas supply passage and said insulating substrate is shorter than a distance between said second gas supply passage and said insulating substrate.

Claim 20

A method of fabricating an electroluminescent device, comprising the steps of: introducing a first gaseous source material for a group II element which belongs to one of group IIA and group IIB of the periodic table into a reaction furnace where an insulating substrate is disposed via a first gas supply passage; introducing a second gaseous source material for a group VIB element which belongs to group VIB of the periodic table into said reaction furnace via a second gas supply passage different from said first gas supply passage, wherein said first gaseous source material and said second gaseous source material are introduced into said reaction furnace in such a manner that a flow rate of said first gaseous source material inside said reaction furnace is made greater than a flow rate of said second gaseous source material inside said reaction furnace, wherein a ratio of said flow rate of said first gaseous source material to said flow rate of said second gaseous source material is at least approximately 4; introducing a third gaseous source material for an element which acts as a luminescent center into said reaction furnace; and causing said first, second and third gaseous source materials to react with each other inside said reaction furnace, whereby a luminescent layer, which is composed of a II-VIB compound and is doped with said element acting as said luminescent center, is formed over said insulating substrate by chemical vapor deposition, wherein a distance between said first gas supply passage and said insulating substrate is shorter than a distance between said second gas supply passage and said insulating substrate.

Claim 25

A method of fabricating an electroluminescent device, comprising the steps of: preparing a group II element belonging to one of group IIA and group IIB of the periodic table as a first gaseous source material, preparing a group IIIB element belonging to group IIIB of the periodic table as a second gaseous source material, preparing a group VIB element belonging to group VIB of the periodic table as a third gaseous source material, and preparing a luminescent center element as a fourth gaseous source material; and introducing said first, second, third and fourth gaseous source materials into a reaction furnace in which an insulating substrate is disposed and causing said first, second, third and fourth gaseous source materials to react with each other inside said reaction furnace, whereby a luminescent layer, a host material of which is a II-IIIB-VIB compound of said group II, IIB and VIB elements, doped with said luminescent center element is formed over said insulating substrate by chemical vapor deposition, wherein said first gaseous source material is introduced into said reaction furnace via a first gas supply passage, said third gaseous source material is introduced into said reaction furnace via a third gas supply passage different from said first gas supply passage, the introduction of said first and third gaseous source materials into said reaction furnace is controlled such that a flow rate of said first gaseous source material for said group II element inside said reaction furnace is made greater than a flow rate of said third gaseous source material for said group VIB element inside said reaction furnace, the introduction being controlled such that a ratio of said flow rate of said first gaseous source material to said flow rate of said third gaseous source material is at least approximately 4, and wherein a distance between said first gas supply passage and said insulating substrate is shorter than a distance between said third gas supply passage and said insulating substrate.

Claim 26

A method of fabricating an electroluminescent device, comprising the steps of: preparing a group II element belonging to one of group IIA and group IIB of the periodic table as a first gaseous source material, preparing a group IIIB element belonging to group IIIB of the periodic table as a second gaseous source material, preparing a group VIB element belonging to group VIB of the periodic table as a third gaseous source material, and preparing a luminescent center element as a fourth gaseous source material; and introducing said first, second, third and fourth gaseous source materials into a reaction furnace in which an insulating substrate is disposed and causing said first, second, third and fourth gaseous source materials to react with each other inside said reaction furnace, whereby a luminescent layer, a host material of which is a II-IIIB-VIB compound of said group II, IIB and VIB elements, doped with said luminescent center element is formed over said insulating substrate by chemical vapor deposition, wherein said first gaseous source material is introduced into said reaction furnace via a first gas supply passage, said third gaseous source material is introduced into said reaction furnace via a third gas supply passage different from said first gas supply passage, the introduction of said first and third gaseous source materials into said reaction furnace is controlled such that a flow rate of said first gaseous source material for said group II element inside said reaction furnace is made greater than a flow rate of said third gaseous source material for said group VIB element inside said reaction furnace, the introduction being controlled such that a ratio of said flow rate of said first gaseous source material to said flow rate of said third gaseous source material is at least approximately 4, and wherein a distance between said first gas supply passage and said insulating substrate is shorter than a distance between said third gas supply passage and said insulating substrate.

Claim 31

A method of fabricating an electro-luminescent device, comprising the steps of: preparing a group II element belonging to one of groups IIA and IIB of the periodic table as a first gaseous source material, preparing a group III element belonging to one of groups IIIA and IIIB of the periodic table as a second gaseous source material, preparing a group VI element belonging to one of groups VIA and VIB of the periodic table as a third gaseous source material, and preparing a luminescent center element as a fourth gaseous source material; supplying said first, second, third, and fourth gaseous source materials into a reaction furnace where an insulating substrate is disposed to react said first, second, third, and fourth gaseous source materials inside said reaction furnace with each other so that a luminescent layer, which is composed of a host material of a II-IIIB-VIB compound of said group II, IIIB and VIB elements, and said luminescent center element which is doped by said host material, is formed over said insulating substrate by chemical vapor deposition; introducing said first gaseous source material into said reaction furnace via a first gas supplying passage; introducing said second gaseous source material into said reaction furnace via a second gas supplying passage which differs from said first gas supplying passage; and introducing said third gaseous source material into said reaction furnace via a third gas supplying passage which differs from said second gas supplying passage, wherein said first gaseous source material is supplied from a center of said reaction furnace, said second gaseous source material is supplied from a periphery of said first gaseous source material into said reaction furnace, and said third gaseous source material is supplied from a periphery of said second gaseous source material into said reaction furnace, wherein a ratio of a flow velocity of said first gaseous source material to a flow velocity of said third gaseous source material is at least approximately 4, and wherein a distance between said first gas supply passage and said insulating substrate is shorter than a distance between said third gas supply passage and said insulating substrate.

Claim 32

A method of fabricating an electro-luminescent device, comprising the steps of: preparing a group II element belonging to one of groups IIA and IIB of the periodic table as a first gaseous source material, preparing a group III element belonging to one of groups IIIA and IIIB of the periodic table as a second gaseous source material, preparing a group VI element belonging to one of groups VIA and VIB of the periodic table as a third gaseous source material, and preparing a luminescent center element as a fourth gaseous source material; supplying said first, second, third, and fourth gaseous source materials into a reaction furnace where an insulating substrate is disposed to react said first, second, third, and fourth gaseous source materials inside said reaction furnace with each other so that a luminescent layer, which is composed of a host material of a II-IIIB-VIB compound of said group II, IIIB and VIB elements, and said luminescent center element which is doped by said host material, is formed over said insulating substrate by chemical vapor deposition; introducing said first gaseous source material into said reaction furnace via a first gas supplying passage; introducing said second gaseous source material into said reaction furnace via a second gas supplying passage which differs from said first gas supplying passage; and introducing said third gaseous source material into said reaction furnace via a third gas supplying passage which differs from said second gas supplying passage, wherein said first gaseous source material is supplied from a center of said reaction furnace, said second gaseous source material is supplied from a periphery of said first gaseous source material into said reaction furnace, and said third gaseous source material is supplied from a periphery of said second gaseous source material into said reaction furnace, wherein a ratio of a flow velocity of said first gaseous source material to a flow velocity of said third gaseous source material is at least approximately 4, and wherein a distance between said first gas supply passage and said insulating substrate is shorter than a distance between said third gas supply passage and said insulating substrate.