Claims Analysis
Total Claims: 17
Claim 1
Independent Claim
204 words
A dynamic logic circuit comprising: a precharge metal-oxide semiconductor ("MOS") device having a source terminal coupled to a first voltage potential, and a gate terminal for receiving a clock signal; one or more MOS device stacks, each of said one or more MOS device stacks including a plurality of serially connected MOS devices, wherein a first one of said plurality of serially connected MOS devices of said each of said one or more MOS device stacks has a drain terminal connected to a drain terminal of said precharge MOS device, forming a precharge node thereby, each of said plurality of serially connected MOS devices of said each of said one or more MOS device stacks having a gate terminal adapted for receiving an input signal, and wherein a terminating one of said plurality of serially connected MOS devices of said each of said one or more MOS device stacks has a source terminal connected to a second voltage potential; and circuitry for charging one or more nodes between said serially connected MOS devices of one or more of said each of said MOS device stacks until an associated one of said input signals changes logic state during an evaluate phase of said clock signal.
Claim 2
Dependent Claim
204 words
A dynamic logic circuit comprising: a precharge metal-oxide semiconductor ("MOS") device having a source terminal coupled to a first voltage potential, and a gate terminal for receiving a clock signal; one or more MOS device stacks, each of said one or more MOS device stacks including a plurality of serially connected MOS devices, wherein a first one of said plurality of serially connected MOS devices of said each of said one or more MOS device stacks has a drain terminal connected to a drain terminal of said precharge MOS device, forming a precharge node thereby, each of said plurality of serially connected MOS devices of said each of said one or more MOS device stacks having a gate terminal adapted for receiving an input signal, and wherein a terminating one of said plurality of serially connected MOS devices of said each of said one or more MOS device stacks has a source terminal connected to a second voltage potential; and circuitry for charging one or more nodes between said serially connected MOS devices of one or more of said each of said MOS device stacks until an associated one of said input signals changes logic state during an evaluate phase of said clock signal.
Claim 3
Dependent Claim
183 words
The dynamic logic circuit of claim 1 wherein said circuitry for charging one or more nodes between said serially connected MOS devices of one or more of said each of said MOS device stacks until an associated one of said input signals changes logic state during an evaluate phase of said clock signal comprises one or more node-charge MOS devices associated with selected ones of said plurality of serially connected MOS devices of said one or more of said each of said one or more MOS device stacks, each of said one or more node-charge MOS devices having (1) a drain terminal connected to a source terminal of an associated one of said plurality of serially connected MOS devices of said one or more of said each of said one or more MOS device stacks, (2) a gate terminal connected to a gate terminal of said associated one of said plurality of serially connected MOS devices of said one or more of said each of said one or more MOS device stacks, and (3) a source terminal connected to said first voltage potential.
Claim 4
Dependent Claim
38 words
The dynamic logic circuit of claim 1 wherein said input signal of said terminating one of said plurality of serially connected MOS devices of said each of said one or more MOS device stacks is said clock signal.
Claim 5
Dependent Claim
33 words
The dynamic logic circuit of claim 3 wherein said each of said plurality of serially connected MOS devices of said each of said one or more MOS device is an N-type MOS device.
Claim 6
Dependent Claim
22 words
The dynamic logic circuit of claim 4 wherein each of said one or more node-charge MOS devices is a P-type MOS device.
Claim 7
Dependent Claim
17 words
The dynamic logic circuit of claim 4 wherein said precharge MOS device comprises a P-type MOS device.
Claim 8
Dependent Claim
373 words
A dynamic logic circuit comprising: a precharge MOS device having a source terminal coupled to a supply voltage, and a gate terminal adapted for receiving a clock signal; one or more MOS device stacks, each of said one or more MOS device stacks including a plurality of serially connected MOS devices, each of said plurality of serially connected MOS devices of said each of said one or more of MOS device stacks having a gate terminal adapted for receiving an input signal, said plurality of serially connected MOS devices of said each of said one or more MOS device stacks including (1) a first MOS device having a drain terminal connected to a drain terminal of said precharge MOS device, (2) an end MOS device, (3) one or more serially connected interior MOS devices, and (4) a clock foot MOS device having a drain terminal coupled to a source terminal of said end MOS device of each of said plurality of serially connected MOS devices of said each of said one or more of MOS device stacks and a source terminal connected to a second voltage potential, said input signal of said clock foot MOS device of said plurality of serially connected MOS devices of said each of said one or more MOS device stacks being said clock signal, wherein said one or more serially connected interior MOS devices of said plurality of serially connected MOS devices of said each of said one or more of MOS device stacks has a drain terminal connected to a source terminal of a previous one of said plurality of serially connected MOS devices of said each of said one or more MOS device stacks and a source terminal connected to a drain terminal of a subsequent one of said plurality of serially connected MOS devices of said each of said one or more of MOS device stacks; and a first circuit for charging a node between an associated one of said first MOS devices of said plurality of serially connected MOS devices of said each of said one or more MOS device stacks and a subsequent one of said plurality of serially connected MOS devices of said each of said one or more MOS device stacks.
Claim 9
Dependent Claim
373 words
A dynamic logic circuit comprising: a precharge MOS device having a source terminal coupled to a supply voltage, and a gate terminal adapted for receiving a clock signal; one or more MOS device stacks, each of said one or more MOS device stacks including a plurality of serially connected MOS devices, each of said plurality of serially connected MOS devices of said each of said one or more of MOS device stacks having a gate terminal adapted for receiving an input signal, said plurality of serially connected MOS devices of said each of said one or more MOS device stacks including (1) a first MOS device having a drain terminal connected to a drain terminal of said precharge MOS device, (2) an end MOS device, (3) one or more serially connected interior MOS devices, and (4) a clock foot MOS device having a drain terminal coupled to a source terminal of said end MOS device of each of said plurality of serially connected MOS devices of said each of said one or more of MOS device stacks and a source terminal connected to a second voltage potential, said input signal of said clock foot MOS device of said plurality of serially connected MOS devices of said each of said one or more MOS device stacks being said clock signal, wherein said one or more serially connected interior MOS devices of said plurality of serially connected MOS devices of said each of said one or more of MOS device stacks has a drain terminal connected to a source terminal of a previous one of said plurality of serially connected MOS devices of said each of said one or more MOS device stacks and a source terminal connected to a drain terminal of a subsequent one of said plurality of serially connected MOS devices of said each of said one or more of MOS device stacks; and a first circuit for charging a node between an associated one of said first MOS devices of said plurality of serially connected MOS devices of said each of said one or more MOS device stacks and a subsequent one of said plurality of serially connected MOS devices of said each of said one or more MOS device stacks.
Claim 10
Dependent Claim
84 words
The dynamic logic circuit of claim 7 further comprising a second circuit for charging a node between an associated one of each of said one or more serially connected interior MOS devices of said plurality of serially connected MOS devices of said each of said one or more MOS device stacks and a subsequent one of said one or more serially connected interior MOS devices of said plurality of serially connected MOS devices of said each of said one or more MOS device stacks.
Claim 11
Dependent Claim
419 words
The dynamic logic circuit of claim 8 wherein said first circuit for charging said node between said associated one of said first MOS devices of said plurality of serially connected MOS devices of said each of said one or more MOS device stacks and said subsequent one of said one or more serially connected MOS devices of said each of said one or more MOS device stacks comprises a first one or more node-charge MOS devices associated with each of said first MOS devices of said plurality of serially connected MOS devices of said each of said one or more MOS device stacks, wherein each of said first one or more node-charge MOS devices has a source terminal coupled to said supply voltage, a drain terminal coupled to a source terminal of said associated one of said first MOS devices of said plurality of serially connected MOS devices of said each of said one or more MOS device stacks, and a gate terminal coupled to said gate terminal of said associated one of said first MOS devices of said one or more serially connected MOS devices of said each of said one or more MOS device stacks, and said second circuit for charging a node between an associated one of each of said one or more serially connected interior MOS devices of said plurality of serially connected MOS devices of said each of said one or more MOS device stacks and a subsequent one of said one or more serially connected interior MOS devices of said plurality of serially connected MOS devices of said each of said one or more MOS device stacks comprises a second one or more node-charge MOS devices associated with each of said one or more serially connected interior MOS devices of said plurality of serially connected MOS devices of said one of said one or more MOS device stacks, wherein each of said second one or more node-charge MOS devices has a source terminal coupled to said supply voltage, a drain terminal coupled to a source terminal of an associated one of said one or more serially connected interior MOS devices of said one or more serially connected MOS devices of said one of said one or more MOS device stacks, and a gate terminal coupled to said gate terminal of said associated one of said one or more serially connected interior MOS devices of said one or more serially connected MOS devices of said one of said one or more MOS device stacks.
Claim 12
Dependent Claim
43 words
The dynamic logic circuit of claim 9 wherein each of said one or more clock foot MOS devices of said plurality of serially connected MOS devices of said each of said one or more MOS device stacks devices is an N-type MOS device.
Claim 13
Dependent Claim
68 words
The dynamic logic circuit of claim 9 wherein said first one or more node-charge MOS devices associated with each of said first one of said serially connected MOS devices of said each of said one or more MOS device stacks comprises two MOS devices associated with each of said first one of said serially connected MOS devices of said each of said one or more MOS device stacks.
Claim 14
Dependent Claim
69 words
The dynamic logic circuit of claim 11 wherein said first one or more node-charge MOS devices associated with each of said first one of said serially connected MOS devices of said each of said one or more MOS device stacks comprises two P-type MOS devices associated with each of said first one of said serially connected MOS devices of said each of said one or more MOS device stacks.
Claim 15
Dependent Claim
210 words
A dynamic logic circuit comprising: circuitry for precharging a precharge node; a first NFET having (1) a drain terminal connected to said precharge node and (2) a gate terminal adapted for receiving a first input signal; a second NFET having (1) a drain terminal connected to said precharge node and (2) a gate terminal adapted for receiving a second input signal; a third NFET having (1) a drain terminal connected to a source terminal of said first NFET, and (2) a gate terminal connected to a third input; a fourth NFET having (1) a drain terminal connected to a source terminal of said second NFET, and (2) a gate terminal connected to a fourth input; and two node-charge devices wherein a first one of said two node-charge devices has (1) a drain terminal connected to said source terminal of said first NFET, (2) a gate terminal connected to said gate terminal of said first NFET and (3) a source terminal connected to a voltage potential, a second one of said two node-charge devices has (1) a drain terminal connected to said source terminal of said second NFET, (2) a gate terminal connected to said gate terminal of said second NFET and (3) a source terminal connected to said voltage potential.
Claim 16
Dependent Claim
210 words
A dynamic logic circuit comprising: circuitry for precharging a precharge node; a first NFET having (1) a drain terminal connected to said precharge node and (2) a gate terminal adapted for receiving a first input signal; a second NFET having (1) a drain terminal connected to said precharge node and (2) a gate terminal adapted for receiving a second input signal; a third NFET having (1) a drain terminal connected to a source terminal of said first NFET, and (2) a gate terminal connected to a third input; a fourth NFET having (1) a drain terminal connected to a source terminal of said second NFET, and (2) a gate terminal connected to a fourth input; and two node-charge devices wherein a first one of said two node-charge devices has (1) a drain terminal connected to said source terminal of said first NFET, (2) a gate terminal connected to said gate terminal of said first NFET and (3) a source terminal connected to a voltage potential, a second one of said two node-charge devices has (1) a drain terminal connected to said source terminal of said second NFET, (2) a gate terminal connected to said gate terminal of said second NFET and (3) a source terminal connected to said voltage potential.
Claim 17
Dependent Claim
17 words
The dynamic logic circuit of claim 13 wherein each of said two node-charge devices comprises a PFET.