Consistent precharge circuit for cascode voltage switch logic

Claim 2

A precharge circuit for a cascode voltage network work wherein said network comprises a plurality of gate groups, each gate group comprising a network of one or more logic gates connected between a voltage node and a grounding node and having an output node carrying a signal derived from said voltage node, each said logic gate controlled by a primary input or by a signal on the output node of another gate group, said circuit comprising: means coupled to said voltage and grounding nodes for precharging said voltage and grounding nodes of each of said gate groups to a first potential level during a precharging period, said precharging period being simultaneous for each of said gate groups, thereby replenishing charge to nodes within each of said gate groups lost during a preceding evaluation phase; output means coupled to said output node for holding a signal on said output node derived from the signal on said voltage node of each of said gate groups at a time prior to said precharging period, said holding extending from commencement to at least a later portion of said precharging period, and for deriving the signal on said output node from the present signal on said voltage node at a time later than said precharging period.

Claim 3

A precharging circuit for a gate group of a cascode voltage network wherein said network comprises one or more gate groups, each gate group comprising a network of one or more logic gates between a voltage node and a grounding node and an output node carrying a signal derived from said voltage node, each said logic gate controlled by a primary input or by a signal on an output node of another gate group, said circuit comprising: a first switch connected between said grounding node and a first potential; a second switch connected between said voltage node and a second potential; a third switch connected between said grounding node and said second potential; a pass switch having an input connected to said voltage node and an output; memory means coupled to said pass switch and said output node for outputting to said output node a signal related to the last signal passed by said pass switch to its output when said pass switch was conducting; first means for changing the state of said pass switch from conducting to non-conducting at a first time; and second means for changing the state of said first switch from conducting to non-conducting and the states of said second and third switches from non-conducting to conducting at a time no earlier than said first time.

Claim 4

A precharging circuit for a gate group of a cascode voltage network wherein said network comprises one or more gate groups, each gate group comprising a network of one or more logic gates between a voltage node and a grounding node and an output node carrying a signal derived from said voltage node, each said logic gate controlled by a primary input or by a signal on an output node of another gate group, said circuit comprising: a first switch connected between said grounding node and a first potential; a second switch connected between said voltage node and a second potential; a third switch connected between said grounding node and said second potential; a pass switch having an input connected to said voltage node and an output; memory means coupled to said pass switch and said output node for outputting to said output node a signal related to the last signal passed by said pass switch to its output when said pass switch was conducting; first means for changing the state of said pass switch from conducting to non-conducting at a first time; and second means for changing the state of said first switch from conducting to non-conducting and the states of said second and third switches from non-conducting to conducting at a time no earlier than said first time.

Claim 5

A precharging circuit as recited in claim 2: wherein said first switch and said pass switch are MOS transistors of one conductivity type and said second and third switches are MOS transistors of another conductivity type; and wherein said first means comprises first pulse generating means for applying a first voltage pulse to said pass switch; and wherein said second means comprises second pulse generating means for applying a second voltage pulse to said first, second and third switches, said second pulse having the same polarity as said first pulse, beginning no sooner than the beginning and before the end of said first pulse and ending no sooner than the end of said first pulse.

Claim 6

A precharging circuit as recited in claim 3, wherein said second pulse generating means comprises delaying means, an input of which is connected to said first pulse generating means.

Claim 7

A precharging circuit as recited in claim 2 wherein said memory means comprises a first buffer amplifier having an input connected to the output of said pass switch and a second buffer amplifier being weaker in gain than said first buffer amplifier, and having an output connected to the output of said pass switch and having an input connected to an output of said first buffer amplifier.

Claim 8

A precharging circuit as recited in claim 2 wherein said memory means comprises a buffer amplifier having an input connected to the output of said pass switch and a capacitance between said output of said pass switch and a fixed potential level.

Claim 9

A precharging circuit as recited in claim 3, wherein said memory means comprises a buffer amplifier having an input connected to the output of said pass switch and a MOS transistor connected between the output of said pass switch and a fixed potential level and the gate of which is connected to an output of said buffer amplifier.