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US5994749A
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Semiconductor device having a gate electrode film containing nitrogen
Assignee: NEC Electronics Corp
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Filing: 1998-01-20
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Granted: 1999-11-30
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Expires: 2018-01-20
Abstract
Abstract There is disclosed a semiconductor device which includes a semiconductor substrate having an element region and source and drain regions, a gate dielectric film containing nitrogen formed in the element region of said semiconductor substrate, a gate electrode formed on the gate dielectric film, a first dielectric film formed adjacent to the gate electrode so as to define a side wall therefor, a second dielectric film formed so as to cover the gate electrode and the first dielectric film, the second dielectric film being doped with nitrogen, and a third dielectric film formed so as to cover the second dielectric film, the third dielectric film being formed of silicon nitride. A method for manufacturing such a semiconductor device is also described.
Inventors
- 👤 Noriaki Oda
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 02:04
CPC Classifications
H; H10; H10D; H10D64/00; H10D64/60; H10D64/66; H10D64/68; H10D64/693; H10D64/01; H10D64/013; H10D64/01302; H10D64/01332; H10D64/01336; H10D64/01338; H10D64/671; H10W; H10W20/00; H10W20/01; H10W20/071; H10W20/074; H10W20/075; H10W20/077; H10W74/00; H10W74/10; H10W74/131; H10W74/137; H10D64/675
Claims Analysis
Total Claims: 9
Claim 1
Independent Claim
138 words
A semiconductor device comprising: a semiconductor substrate having an element region and source and drain regions; a gate dielectric film containing nitrogen formed in said element region of said semiconductor substrate; a gate electrode formed on said gate dielectric film; a first dielectric film formed adjacent to said gate electrode so as to define a side wall therefor, said first dielectric film containing nitrogen in a concentration greater than that of said gate dielectric film; a second dielectric film formed so as to cover said gate electrode, said source and drain regions and said first dielectric film, said second dielectric film also containing nitrogen; and a third dielectric film formed so as to cover said second dielectric film and said underlying first dielectric film and source and drain regions, said third dielectric film being formed of silicon nitride.
Claim 2
Dependent Claim
138 words
A semiconductor device comprising: a semiconductor substrate having an element region and source and drain regions; a gate dielectric film containing nitrogen formed in said element region of said semiconductor substrate; a gate electrode formed on said gate dielectric film; a first dielectric film formed adjacent to said gate electrode so as to define a side wall therefor, said first dielectric film containing nitrogen in a concentration greater than that of said gate dielectric film; a second dielectric film formed so as to cover said gate electrode, said source and drain regions and said first dielectric film, said second dielectric film also containing nitrogen; and a third dielectric film formed so as to cover said second dielectric film and said underlying first dielectric film and source and drain regions, said third dielectric film being formed of silicon nitride.
Claim 3
Dependent Claim
17 words
A semiconductor device as recited in claim 1, wherein said first dielectric film is doped with nitrogen.
Claim 4
Dependent Claim
18 words
A semiconductor device as recited in claim 2, wherein said first dielectric film is formed of silicon nitride.
Claim 5
Dependent Claim
134 words
A semiconductor device comprising, in combination: a semiconductor substrate having an element region and source and drain regions; a gate dielectric film containing nitrogen in an amount of 3×10 18 -7×10 18 cm -3 formed in said element region of said semiconductor substrate; a gate electrode formed on said gate dielectric film; a first dielectric film formed adjacent to said gate electrode so as to define a side wall therefor, said first dielectric film containing nitrogen in an amount of 5-×10 18 -5×10 19 cm -3 ; a second dielectric film formed so as to cover said gate electrode and said first dielectric film, said second dielectric film also containing nitrogen; and a third dielectric film formed so as to cover said second dielectric film, said third dielectric film being formed of silicon nitride.
Claim 6
Dependent Claim
134 words
A semiconductor device comprising, in combination: a semiconductor substrate having an element region and source and drain regions; a gate dielectric film containing nitrogen in an amount of 3×10 18 -7×10 18 cm -3 formed in said element region of said semiconductor substrate; a gate electrode formed on said gate dielectric film; a first dielectric film formed adjacent to said gate electrode so as to define a side wall therefor, said first dielectric film containing nitrogen in an amount of 5-×10 18 -5×10 19 cm -3 ; a second dielectric film formed so as to cover said gate electrode and said first dielectric film, said second dielectric film also containing nitrogen; and a third dielectric film formed so as to cover said second dielectric film, said third dielectric film being formed of silicon nitride.
Claim 7
Dependent Claim
25 words
A semiconductor device as recited in claim 4, wherein said first dielectric film contains nitrogen in an amount of about 10 19 cm -3 .
Claim 8
Dependent Claim
18 words
A semiconductor device as recited in claim 5, wherein said first dielectric film is formed of silicon nitride.
Claim 9
Dependent Claim
25 words
A semiconductor device as recited in claim 4, wherein said gate dielectric film contains nitrogen in the amount of about 5×10 18 cm -3 .
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