Patent US5994193A successfully refreshed from Google Patents.
US5994193A
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Method of making high performance MOSFET with integrated poly/metal gate electrode
Assignee: Advanced Micro Devices Inc
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Filing: 1998-06-10
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Granted: 1999-11-30
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Expires: 2018-06-10
Abstract
Abstract An integrated circuit transistor and method of making the same are provided. The transistor includes a substrate, first and second source/drain regions, and a gate electrode stack coupled to the substrate. The gate electrode stack is fabricated by forming a first insulating layer on the substrate, forming a first conductor layer on the first insulating layer, and forming a metal layer on the first conductor layer. A second insulating layer, such as an interlevel dielectric layer, is coupled to the substrate adjacent to the gate electrode stack. Sidewall spacers and LDD processing may be incorporated. The transistor and method integrate metal and polysilicon into a self-aligned gate electrode stack.
Inventors
- 👤 Mark I. Gardner
- 👤 Derick J. Wristers
- 👤 Jon D. Cheek
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-05 17:00
CPC Classifications
H; H10; H10D; H10D30/00; H10D30/01; H10D30/021; H10D30/0223; H10D30/0212; H10D30/0227; H10D64/00; H10D64/01; H10D64/013; H10D64/01302; H10D64/01304; H10D64/01306; H10D64/01308; H10D64/01312; H10D64/017
Claims Analysis
Total Claims: 17
Claim 1
Independent Claim
115 words
A method of fabricating an integrated circuit transistor on a substrate, comprising the steps of: forming a gate electrode stack on the substrate, by forming a first insulating layer, a first conductor layer on the first insulating layer, a second insulating layer on the first conductor layer, and a second conductor layer on the second insulating layer, removing the second conductor layer and the second insulating layer, and depositing a metal layer on the first conductor layer; forming first and second source/drain regions in the substrate in spaced apart relation to define a channel region underlying the first insulating layer; and forming a third insulating layer on the substrate adjacent to the gate electrode stack.
Claim 2
Independent Claim
115 words
A method of fabricating an integrated circuit transistor on a substrate, comprising the steps of: forming a gate electrode stack on the substrate, by forming a first insulating layer, a first conductor layer on the first insulating layer, a second insulating layer on the first conductor layer, and a second conductor layer on the second insulating layer, removing the second conductor layer and the second insulating layer, and depositing a metal layer on the first conductor layer; forming first and second source/drain regions in the substrate in spaced apart relation to define a channel region underlying the first insulating layer; and forming a third insulating layer on the substrate adjacent to the gate electrode stack.
Claim 3
Dependent Claim
25 words
The method of claim 1, comprising the step of forming first and second insulating sidewall spacers on the substrate adjacent to the gate electrode stack.
Claim 4
Dependent Claim
31 words
The method of claim 1, wherein the step of forming the gate electrode stack comprises forming a silicide layer on the first conductor layer prior to application of the metal layer.
Claim 5
Dependent Claim
28 words
The method of claim 2, wherein the step of forming the gate electrode stack comprises planarizing the metal layer substantially to the sidewall spacers by chemical mechanical polishing.
Claim 6
Independent Claim
120 words
A method of fabricating an integrated circuit transistor on a substrate having a first insulating layer, comprising the steps of: forming a first conductor layer on the first insulating layer; forming a second insulating layer on the first conductor layer; forming a second conductor layer on the second insulating layer; forming first and second source/drain regions in the substrate in spaced apart relation to define a channel region underlying the first insulating layer; forming a third insulating layer on the substrate adjacent to the first insulating layer, the first conductor layer, the second insulating layer and the second conductor layer; removing the second conductor layer and the second insulating layer; and forming a metal layer on the first conductor layer.
Claim 7
Independent Claim
120 words
A method of fabricating an integrated circuit transistor on a substrate having a first insulating layer, comprising the steps of: forming a first conductor layer on the first insulating layer; forming a second insulating layer on the first conductor layer; forming a second conductor layer on the second insulating layer; forming first and second source/drain regions in the substrate in spaced apart relation to define a channel region underlying the first insulating layer; forming a third insulating layer on the substrate adjacent to the first insulating layer, the first conductor layer, the second insulating layer and the second conductor layer; removing the second conductor layer and the second insulating layer; and forming a metal layer on the first conductor layer.
Claim 8
Dependent Claim
27 words
The method of claim 5, comprising the step of forming first and second insulating sidewall spacers on the substrate adjacent to the first conductor and insulating layers.
Claim 9
Dependent Claim
25 words
The method of claim 5, comprising the step of forming a silicide layer on the first conductor layer prior to application of the metal layer.
Claim 10
Dependent Claim
28 words
The method of claim 5, wherein the step of forming the metal layer comprises planarizing the metal layer substantially to the third insulating layer by chemical mechanical polishing.
Claim 11
Independent Claim
28 words
The method of claim of 6, wherein the step of forming the metal layer comprises planarizing the metal layer substantially to the sidewall spacers by chemical mechanical polishing.
Claim 12
Independent Claim
98 words
A method of fabricating a gate electrode stack for an integrated circuit transistor on a substrate, comprising the steps of: forming a first insulating layer on the substrate; forming a first conductor layer on the first insulating layer; forming a second insulating layer on the substrate adjacent to the first conductor layer and the first insulating layer; and forming a third insulating layer on the first conductor layer, and a second conductor layer on the third insulating layer, removing the second conductor layer and the third insulating layer, and depositing a metal layer on the first conductor layer.
Claim 13
Independent Claim
98 words
A method of fabricating a gate electrode stack for an integrated circuit transistor on a substrate, comprising the steps of: forming a first insulating layer on the substrate; forming a first conductor layer on the first insulating layer; forming a second insulating layer on the substrate adjacent to the first conductor layer and the first insulating layer; and forming a third insulating layer on the first conductor layer, and a second conductor layer on the third insulating layer, removing the second conductor layer and the third insulating layer, and depositing a metal layer on the first conductor layer.
Claim 14
Dependent Claim
27 words
The method of claim 10, comprising the step of forming first and second insulating sidewall spacers on the substrate adjacent to the first conductor and insulating layers.
Claim 15
Dependent Claim
25 words
The method of claim 10, comprising the step of forming a silicide layer on the first conductor layer prior to application of the metal layer.
Claim 16
Dependent Claim
27 words
The method of claim 11, wherein the step of forming the metal layer comprises planarizing the metal layer substantially to the sidewall spacers by chemical mechanical polishing.
Claim 17
Dependent Claim
28 words
The method of claim 10, wherein the step of forming the metal layer comprises planarizing the metal layer substantially to the second insulating layer by chemical mechanical polishing.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2002-11-29 | 2003-05-31 | 2003-11-30 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2006-11-29 | 2007-05-31 | 2007-11-30 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2010-11-29 | 2011-05-31 | 2011-11-30 | $7700.00 | Window Closed / Lapsed |