← Back to Patent Explorer
US5986320A Expired / Lapsed US ⏱️ 0.0 years remaining

Semiconductor integrated circuit device

Assignee: Mitsubishi Electric Corp
•
Filing: 1998-03-19
•
Granted: 1999-11-16
•
Expires: 2018-03-19
📄 Original PDF 🌐 Google Patents 🔄 Sync Now

Abstract

Abstract A method of testing a semiconductor integrated circuit device including a defective chip recognition circuit unit so that in testing a DPAM unit, if the DRAM unit cannot be made to conform to a specification, even using a redundancy circuit, defective data can be written in the defective chip recognition circuit unit. The method includes deciding whether a DRAM unit conforms and deciding whether a DRAM unit judged imperfect can be conformed using a redundancy circuit; deciding whether the semiconductor integrated circuit device is defective when the DRAM unit has been judged defective and writing the defective decision data into a defective chip recognition circuit unit; reading the defective decision data in the defective chip recognition circuit unit and deciding whether to test the logic unit; testing the logic unit when the test of the logic unit is to be performed; and deciding whether the logic unit conforms.

Inventors

  • 👤 Kenji Kawano

Bibliographic Details

Application Number —
Jurisdiction US
Data Source google_patents
Last Synchronized 2026-10-29 08:50
CPC Classifications
G; G11; G11C; G11C29/00; G11C29/04; G11C29/08; G11C29/12; G11C29/44; G11C29/70; G11C29/78; G11C29/835; H; H10; H10W; H10W46/00; H10W72/00; H10W72/90; H10W46/401; H10W46/403; H10W46/601; H10W72/931; H10W72/932

Claims Analysis

Total Claims: 7
Claim 1
Independent Claim 82 words
A semiconductor integrated circuit device comprising: a semiconductor substrate; a dynamic random access memory (DRAM) unit and a logic unit on said semiconductor substrate and connected to each other; and a defective chip recognition circuit unit located on a surface of said semiconductor substrate so that, during testing of said DRAM unit, if said DRAM unit cannot be conformed, even by using a redundancy circuit, to a specification, data indicating a defect can be written into said defective chip recognition circuit unit.
Claim 2
Dependent Claim 82 words
A semiconductor integrated circuit device comprising: a semiconductor substrate; a dynamic random access memory (DRAM) unit and a logic unit on said semiconductor substrate and connected to each other; and a defective chip recognition circuit unit located on a surface of said semiconductor substrate so that, during testing of said DRAM unit, if said DRAM unit cannot be conformed, even by using a redundancy circuit, to a specification, data indicating a defect can be written into said defective chip recognition circuit unit.
Claim 3
Dependent Claim 38 words
The semiconductor integrated circuit device as set forth in claim 1, wherein said defective chip recognition circuit unit has a defective chip recognition fuse and two pads connected externally to opposite ends of said defective chip recognition fuse.
Claim 4
Dependent Claim 54 words
The semiconductor integrated circuit device as set forth in claim 1, wherein said defective chip recognition circuit unit has a defective chip recognition fuse and two pads connected externally to opposite ends of said defective chip recognition fuse, and one of said ends is also connected to a power source wiring within said chip.
Claim 5
Dependent Claim 53 words
The semiconductor integrated circuit device as set forth in claim 1, wherein said defective chip recognition circuit unit has a defective chip recognition fuse and two pads connected externally to opposite ends of said defective chip recognition fuse, and one of said ends is also connected to an AND wiring within said chip.
Claim 6
Dependent Claim 33 words
The semiconductor integrated circuit device as set forth in claim 2, including a redundancy fuse in said DRAM unit, wherein said redundancy fuse and said defective chip recognition fuse are the same material.
Claim 7
Dependent Claim 31 words
The semiconductor integrated circuit device as set forth in claim 5, wherein said redundancy fuse and said defective chip recognition fuse are the same material and formed in the same process.

References Cited (Backward Citations)

JPS6130044A Cited
EP0275752A1 Cited
EP0469252A1 Cited
JPH04293247A Cited
JPH0547862A Cited
US5373476A Cited
JPH0669446A Cited
US5870329A Cited

USPTO Annuity & Maintenance Windows

Annuity Stage Window Opens Payment Deadline Surcharge Period Until Estimated Fee Status
3.5 Years (Year 4) 2002-11-15 2003-05-17 2003-11-16 $2000.00 Window Closed / Lapsed
7.5 Years (Year 8) 2006-11-15 2007-05-17 2007-11-16 $3760.00 Window Closed / Lapsed
11.5 Years (Year 12) 2010-11-15 2011-05-17 2011-11-16 $7700.00 Window Closed / Lapsed

Assigned Categories & Tags

No categories assigned to this patent yet.

Assign Category Tag