Patent US5985103A successfully refreshed from Google Patents.
US5985103A
Expired / Lapsed
US
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Method for improved bottom and side wall coverage of high aspect ratio features
Assignee: Micron Technology Inc
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Filing: 1997-08-14
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Granted: 1999-11-16
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Expires: 2017-08-14
Abstract
Abstract A method is disclosed for improved side wall and bottom coverage of high aspect ratio space situated upon a substrate in two (2) steps. A lining is formed on a side wall surface of the space that terminated at a bottom surface. An opening then remains to a void defined by the lining and the bottom surface. The void is filled with a material passing through the opening to the space. When sputtered, the lining can be formed by a less-collimated sputtered particle flux, and the void can be filled by a collimated sputtered particle flux. The lining can be formed by flux in a plasma formed from a first gas having a neutral to ion ratio, and the void can be filled by a flux in a plasma formed from a second gas having a neutral to ion ratio lower than that of the first. Also, the lining can be formed by a flux in a plasma formed from a first gas having an atomic mass, and the void can be filled by a flux in a plasma formed from a second gas having an atomic mass lower than that of the first. The lining can be formed by sputtering a target having a crystal structure not preferentially oriented to maximize collimation thereof, and the void can be filled with a flux from a target having a crystal structure preferentially oriented to maximize collimation thereof. A confining magnetic field may be used to reduce electron losses at process chamber walls, allowing for improved collimation of the collimated flux. The substrate may also be heated or biased during exposure to the less-collimated flux to increase the good side wall and step coverage of the less-collimated flux, and cooled or reverse-biased during exposure to the collimated flux to increase the good bottom coverage of the collimated flux. Alternatively, the substrate may be exposed to only a collimated flux, but good side wall coverage can be achieved by alternating the temperature and/or bias of the substrate to provide the desired side wall and step coverage. Varied pressure can also be used to adjust material deposition.
Inventors
- 👤 John H. Givens
- 👤 Richard L. Elliott
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-04 20:59
CPC Classifications
C; C23; C23C; C23C14/00; C23C14/04; C23C14/046; C23C14/22; C23C14/34; C23C14/35; C23C14/352; H; H10; H10W; H10W10/00; H10W10/01; H10W10/011; H10W10/014; H10W10/10; H10W10/17; H10W20/00; H10W20/01; H10W20/031; H10W20/056
Claims Analysis
Total Claims: 78
Claim 1
Independent Claim
87 words
A method for filling a structure in a semiconductor device comprising: providing a substrate having thereon a space to be filled, the space having a side wall surface and a bottom surface; forming a lining substantially covering the side wall surface of the space and not substantially covering the bottom surface of the space, the lining with the bottom surface defining a void within the space, the void having an opening thereto within the space; and then filling the void with a material passing through the opening.
Claim 2
Independent Claim
87 words
A method for filling a structure in a semiconductor device comprising: providing a substrate having thereon a space to be filled, the space having a side wall surface and a bottom surface; forming a lining substantially covering the side wall surface of the space and not substantially covering the bottom surface of the space, the lining with the bottom surface defining a void within the space, the void having an opening thereto within the space; and then filling the void with a material passing through the opening.
Claim 3
Dependent Claim
62 words
The method as defined in claim 1, wherein: the lining is formed by deposition of a lining material in a direction that is not substantially parallel to the side wall surface of the space; and the void is filled by the material which passes through the opening in a direction that is substantially parallel to the side wall surface of the space.
Claim 4
Dependent Claim
32 words
The method as defined in claim 1, wherein the side wall surface of the space is substantially orthogonal to at least one of the bottom surface of the space and the substrate.
Claim 5
Dependent Claim
20 words
The method as defined in claim 1, wherein the space has an aspect ratio of at least 2 to 1.
Claim 6
Dependent Claim
54 words
The method as defined in claim 1, wherein: the lining is formed while applying a bias voltage at said substrate within the range of about -30 to about -500 V; and the void is filled by while applying a bias voltage at said substrate within the range of about -30 to about 100 V.
Claim 7
Dependent Claim
49 words
The method as defined in claim 1, wherein: while the lining is formed, the substrate is heated within the range of about 150° C. to about 700° C.; and while the void is filled, the substrate is heated within the range of about -15° C. to about 150° C.
Claim 8
Dependent Claim
54 words
The method as defined in claim 1, wherein: the lining is formed while applying a pressure to the substrate in a range from about 2 mTorr to about 10 mTorr; and the void is filled by while applying a pressure to the substrate in a range from about 0.1 mTorr to about 2 mTorr.
Claim 9
Dependent Claim
21 words
The method as defined in claim 1, wherein the material filling the void substantially covers the bottom surface of the space.
Claim 10
Dependent Claim
25 words
The method as defined in claim 1, wherein; the lining is formed by physical vapor deposition; and the void is filled by chemical vapor deposition.
Claim 11
Dependent Claim
30 words
The method as defined in claim 9, wherein: the lining is formed while applying a bias voltage at said substrate within the range of about -30 to about -500 v.
Claim 12
Dependent Claim
29 words
The method as defined in claim 1 wherein; the lining is formed by a less-collimated sputtered particle flux; and the void is filled by a collimated sputtered particle flux.
Claim 13
Dependent Claim
54 words
The method as defined in claim 11, wherein: the lining is formed while applying a bias voltage at said substrate within the range of about -30 to about -500 v; and the void is filled by while applying a bias voltage at said substrate within the range of about -30 to about 100 v.
Claim 14
Dependent Claim
64 words
The method as defined in claim 1, wherein; the lining is formed by a particle flux sputtered in a sputtering plasma formed from a first gas having a neutral to ion ratio; and the void is filled by a particle flux sputtered in a sputtering plasma formed from a second gas having a neutral to ion ratio lower than that of the first gas.
Claim 15
Dependent Claim
54 words
The method as defined in claim 13, wherein: the lining is formed while applying a bias voltage at said substrate within the range of about -30 to about -500 v; and the void is filled by while applying a bias voltage at said substrate within the range of about -30 to about 100 v.
Claim 16
Dependent Claim
60 words
The method as defined in claim 1, wherein; the lining is formed by a particle flux sputtered in a sputtering plasma formed from a first gas having an atomic mass; and the void is filled by a particle flux sputtered in a sputtering plasma formed from a second gas having an atomic mass lower than that of the first gas.
Claim 17
Dependent Claim
54 words
The method as defined in claim 15, wherein: the lining is formed while applying a bias voltage at said substrate within the range of about -30 to about -500 v; and the void is filled by while applying a bias voltage at said substrate within the range of about -30 to about 100 v.
Claim 18
Dependent Claim
51 words
The method as defined in claim 1, wherein: the lining is formed by sputtering from a target having a crystal structure not preferentially oriented to maximize collimation thereof; and the void is filled with a particle flux sputtered from a target having a crystal structure preferentially oriented to maximize collimation thereof.
Claim 19
Dependent Claim
54 words
The method as defined in claim 17, wherein: the lining is formed while applying a bias voltage at said substrate within the range of about -30 to about -500 v; and the void is filled by while applying a bias voltage at said substrate within the range of about -30 to about 100 v.
Claim 20
Dependent Claim
43 words
The method as defined in claim 1, wherein said substrate is in a first position at which said lining is formed and is in a second position at which the void is filled, wherein the first and second positions are substantially the same.
Claim 21
Dependent Claim
41 words
The method as defined in claim 1, wherein said substrate is moved from a first position at which said lining is formed to a second position at which the void is filled, wherein the first and second positions are substantially different.
Claim 22
Dependent Claim
49 words
The method as defined in claim 1, wherein at least one of the forming of the lining and the filling of the void is a process of sputtering a target, the method further comprising providing a confining magnetic field extending from the target to the substrate to confine electrons.
Claim 23
Dependent Claim
30 words
The method as defined in claim 1, wherein filling the void through the opening further comprises: applying at least one of heat and pressure to the material within the space.
Claim 24
Independent Claim
149 words
A method for filling a structure in a semiconductor device comprising: providing a substrate having thereon a space to be filled, the space having a side wall surface and a bottom surface, wherein the side wall surface of the space is substantially orthogonal to the bottom surface of the space and to the substrate, and wherein the space has an aspect ratio of at least 2 to 1; forming a lining substantially covering the side wall surface of the space and not substantially covering the bottom surface of the space, the lining with the bottom surface defining a void within the space, the void having an opening thereto within the space, the lining being formed by deposition of a lining material in a direction that is not substantially parallel to the side wall surface of the space; and then filling the void with a material passing through the opening.
Claim 25
Independent Claim
149 words
A method for filling a structure in a semiconductor device comprising: providing a substrate having thereon a space to be filled, the space having a side wall surface and a bottom surface, wherein the side wall surface of the space is substantially orthogonal to the bottom surface of the space and to the substrate, and wherein the space has an aspect ratio of at least 2 to 1; forming a lining substantially covering the side wall surface of the space and not substantially covering the bottom surface of the space, the lining with the bottom surface defining a void within the space, the void having an opening thereto within the space, the lining being formed by deposition of a lining material in a direction that is not substantially parallel to the side wall surface of the space; and then filling the void with a material passing through the opening.
Claim 26
Dependent Claim
35 words
The method as defined in claim 23, wherein the void is filled by the material which passes through the opening in a direction that is substantially parallel to the side wall surface of the space.
Claim 27
Independent Claim
76 words
A method for filling a structure in a semiconductor device comprising: providing a substrate having thereon a space to be filled, the space having a side wall surface and a bottom surface; sputtering a less-collimated sputtered particle flux to substantially cover the side wall surface of the space and to not substantially cover the bottom surface of the space; and then sputtering a collimated sputtered particle flux into the space to fill the space without voids.
Claim 28
Independent Claim
76 words
A method for filling a structure in a semiconductor device comprising: providing a substrate having thereon a space to be filled, the space having a side wall surface and a bottom surface; sputtering a less-collimated sputtered particle flux to substantially cover the side wall surface of the space and to not substantially cover the bottom surface of the space; and then sputtering a collimated sputtered particle flux into the space to fill the space without voids.
Claim 29
Dependent Claim
20 words
The method as defined in claim 25, wherein the space has an aspect ratio of at least 2 to 1.
Claim 30
Dependent Claim
70 words
The method as defined in claim 26, wherein the space has a side wall surface that is substantially orthogonal to the substrate, and wherein: the less-collimated sputtered particle flux is sputtered in a direction that is not substantially parallel to the side wall surface of the space; and the collimated sputtered particle flux is sputtered in a direction that is substantially parallel to the side wall surface of the space.
Claim 31
Independent Claim
113 words
A method for filling a structure in a semiconductor device comprising: providing a substrate having thereon a space to be filled, the space having a side wall surface and a bottom surface; forming a lining with a less-collimated sputtered particle flux, the lining substantially covering the side wall surface of the space and not substantially covering the bottom surface of the space, the lining with the bottom surface defining a void within the space, the void having an opening thereto within the space; and then filling the void through the opening with a collimated sputtered particle flux, the collimated sputtered particle flux substantially covering the bottom surface of the space and the lining.
Claim 32
Independent Claim
113 words
A method for filling a structure in a semiconductor device comprising: providing a substrate having thereon a space to be filled, the space having a side wall surface and a bottom surface; forming a lining with a less-collimated sputtered particle flux, the lining substantially covering the side wall surface of the space and not substantially covering the bottom surface of the space, the lining with the bottom surface defining a void within the space, the void having an opening thereto within the space; and then filling the void through the opening with a collimated sputtered particle flux, the collimated sputtered particle flux substantially covering the bottom surface of the space and the lining.
Claim 33
Dependent Claim
87 words
The method as defined in claim 28, wherein the space has a side wall surface that is substantially orthogonal to the substrate, and the space has an aspect ratio of at least 2 to 1, and wherein: the sputtered particle flux forming the lining is sputtered in a direction that is not substantially parallel to the side wall surface of the space; and the sputtered particle flux filling the void is sputtered in a direction that is substantially parallel to the side wall surface of the space.
Claim 34
Dependent Claim
50 words
The method as defined in claim 28, wherein: the collimated sputtered particle flux is sputtered from a target having a crystal structure preferentially oriented to maximize collimation thereof; and the less-collimated sputtered particle flux is sputtered from a target having a crystal structure not preferentially oriented to maximize collimation thereof.
Claim 35
Dependent Claim
44 words
The method as defined in claim 28, wherein, while the lining is formed and the void is filled, there is a variance of at least one of: bias voltage applied at the substrate; heat applied to the substrate; and pressure applied to the substrate.
Claim 36
Dependent Claim
55 words
The method as defined in claim 28, wherein said substrate is at a first position at which said substrate is exposed to said collimated sputtered particle flux and is at a second position at which said substrate is exposed to said less-collimated sputtered particle flux, wherein the first and second positions are substantially the same.
Claim 37
Dependent Claim
55 words
The method as defined in claim 28, wherein said substrate is moved from a first position at which said substrate is exposed to said collimated sputtered particle flux to a second position at which said substrate is exposed to said less-collimated sputtered particle flux, wherein the first and second positions are not substantially the same.
Claim 38
Dependent Claim
40 words
The method as defined in claim 28, further comprising providing a confining magnetic field extending from a sputtering target of at least one of the less-collimated sputtered particle flux the collimated sputtered particle flux to the substrate to confine electrons.
Claim 39
Dependent Claim
41 words
The method as defined in claim 28, wherein filling the void through the opening further comprises: applying at least one of heat and pressure to the particle flux in the space to substantially fill the space with the sputtered particle flux.
Claim 40
Independent Claim
106 words
A method for filling a structure in a semiconductor device comprising: providing a substrate having thereon a space to be filled, said space having a side wall surface and a bottom surface; sputtering a particle flux in a sputtering plasma formed from a first gas having a neutral to ion ratio to substantially covering the side wall surface of the space and not substantially covering the bottom surface of the space; and then sputtering a particle flux in a sputtering plasma formed from a second gas having a neutral to ion ratio lower than that of the first gas to completely and voidlessly fill the space.
Claim 41
Independent Claim
106 words
A method for filling a structure in a semiconductor device comprising: providing a substrate having thereon a space to be filled, said space having a side wall surface and a bottom surface; sputtering a particle flux in a sputtering plasma formed from a first gas having a neutral to ion ratio to substantially covering the side wall surface of the space and not substantially covering the bottom surface of the space; and then sputtering a particle flux in a sputtering plasma formed from a second gas having a neutral to ion ratio lower than that of the first gas to completely and voidlessly fill the space.
Claim 42
Dependent Claim
20 words
The method as defined in claim 36, wherein the space has an aspect ratio of at least 2 to 1.
Claim 43
Dependent Claim
76 words
The method as defined in claim 37, wherein the space has a side wall surface that is substantially orthogonal to the substrate, and wherein: the sputtered particle flux partially filling the space is sputtered in a direction that is not substantially parallel to the side wall surface of the space; and the sputtered particle flux substantially filling the space is sputtered in a direction that is substantially parallel to the side wall surface of the space.
Claim 44
Independent Claim
147 words
A method for filling a structure in a semiconductor device comprising: providing a substrate having thereon a space to be filled, the space having a side wall surface and a bottom surface; forming a lining with a particle flux sputtered in a sputtering plasma formed from a first gas having a neutral to ion ratio, the lining substantially covering the side wall surface of the space and not substantially covering the bottom surface of the space, the lining with the bottom surface defining a void within the space, the void having an opening thereto within the space; and then filling the void through the opening with a particle flux sputtered in a sputtering plasma formed from a second gas having a neutral to ion ratio lower than that of the first gas, the sputtered particle flux substantially covering the bottom surface of the space and the lining.
Claim 45
Independent Claim
147 words
A method for filling a structure in a semiconductor device comprising: providing a substrate having thereon a space to be filled, the space having a side wall surface and a bottom surface; forming a lining with a particle flux sputtered in a sputtering plasma formed from a first gas having a neutral to ion ratio, the lining substantially covering the side wall surface of the space and not substantially covering the bottom surface of the space, the lining with the bottom surface defining a void within the space, the void having an opening thereto within the space; and then filling the void through the opening with a particle flux sputtered in a sputtering plasma formed from a second gas having a neutral to ion ratio lower than that of the first gas, the sputtered particle flux substantially covering the bottom surface of the space and the lining.
Claim 46
Dependent Claim
87 words
The method as defined in claim 39, wherein the space has a side wall surface that is substantially orthogonal to the substrate, and the space has an aspect ratio of at least 2 to 1, and wherein: the sputtered particle flux forming the lining is sputtered in a direction that is not substantially parallel to the side wall surface of the space; and the sputtered particle flux filling the void is sputtered in a direction that is substantially parallel to the side wall surface of the space.
Claim 47
Dependent Claim
57 words
The method as defined in claim 39, wherein: the particle flux sputtered in the sputtering plasma formed from the second gas is sputtered from a target having a crystal structure preferentially oriented to maximize collimation thereof; and the lining is formed by sputtering from a target having a crystal structure not preferentially oriented to maximize collimation thereof.
Claim 48
Dependent Claim
57 words
The method as defined in claim 39, wherein said substrate is at a first position at which said lining is formed and is at a second position at which said substrate is exposed to the particle flux sputtered in the sputtering plasma formed from the second gas, wherein the first and second positions are substantially the same.
Claim 49
Dependent Claim
57 words
The method as defined in claim 39, wherein said substrate is moved from a first position at which said lining is formed to a second position at which said substrate is exposed to the particle flux sputtered in the sputtering plasma formed from the second gas, wherein the first and second positions are not substantially the same.
Claim 50
Dependent Claim
42 words
The method as defined in claim 39, fuirther comprising providing a confining magnetic field extending from a sputtering target of the particle flux sputtered in the sputtering plasma formed from at least one of the first and second gases to confine electrons.
Claim 51
Dependent Claim
42 words
The method as defined in claim 39, wherein filling the void through the opening further comprises: applying at least one of heat and pressure to the sputtered particle flux in the space to substantially fill the space with the sputtered particle flux.
Claim 52
Dependent Claim
44 words
The method as defined in claim 39, wherein, while the lining is formed and the void is filled, there is a variance of at least one of: bias voltage applied at the substrate; heat applied to the substrate; and pressure applied to the substrate.
Claim 53
Independent Claim
102 words
A method for filling a structure in a semiconductor device comprising: providing a substrate having thereon a space to be filled, said space having a side wall surface and a bottom surface; sputtering a particle flux in a sputtering plasma formed from a first gas having an atomic mass to substantially cover the side wall surface of the space and not substantially cover the bottom surface of the space; and then sputtering a particle flux in a sputtering plasma formed from a second gas having an atomic mass lower than that of the first gas to completely and voidlessly fill the space.
Claim 54
Independent Claim
102 words
A method for filling a structure in a semiconductor device comprising: providing a substrate having thereon a space to be filled, said space having a side wall surface and a bottom surface; sputtering a particle flux in a sputtering plasma formed from a first gas having an atomic mass to substantially cover the side wall surface of the space and not substantially cover the bottom surface of the space; and then sputtering a particle flux in a sputtering plasma formed from a second gas having an atomic mass lower than that of the first gas to completely and voidlessly fill the space.
Claim 55
Dependent Claim
20 words
The method as defined in claim 47, wherein the space has an aspect ratio of at least 2 to 1.
Claim 56
Dependent Claim
76 words
The method as defined in claim 48, wherein the space has a side wall surface that is substantially orthogonal to the substrate, and wherein: the sputtered particle flux partially filling the space is sputtered in a direction that is not substantially parallel to the side wall surface of the space; and the sputtered particle flux substantially filling the space is sputtered in a direction that is substantially parallel to the side wall surface of the space.
Claim 57
Independent Claim
142 words
A method for filling a structure in a semiconductor device comprising: providing a substrate having thereon a space to be filled, the space having a side wall surface and a bottom surface; forming a lining substantially covering the side wall surface of the space with a particle flux sputtered in a sputtering plasma formed from a first gas having an atomic mass, the lining with the bottom surface defining a void within the space, the lining not substantially covering the bottom surface of the space, the void having an opening thereto within the space; and then filling the void through the opening with a particle flux sputtered in a sputtering plasma formed from a second gas having an atomic mass lower than that of the first gas, the sputtered particle flux substantially covering the bottom surface of the space and the lining.
Claim 58
Independent Claim
142 words
A method for filling a structure in a semiconductor device comprising: providing a substrate having thereon a space to be filled, the space having a side wall surface and a bottom surface; forming a lining substantially covering the side wall surface of the space with a particle flux sputtered in a sputtering plasma formed from a first gas having an atomic mass, the lining with the bottom surface defining a void within the space, the lining not substantially covering the bottom surface of the space, the void having an opening thereto within the space; and then filling the void through the opening with a particle flux sputtered in a sputtering plasma formed from a second gas having an atomic mass lower than that of the first gas, the sputtered particle flux substantially covering the bottom surface of the space and the lining.
Claim 59
Dependent Claim
87 words
The method as defined in claim 50, wherein the space has a side wall surface that is substantially orthogonal to the substrate, and the space has an aspect ratio of at least 2 to 1, and wherein: the sputtered particle flux forming the lining is sputtered in a direction that is not substantially parallel to the side wall surface of the space; and the sputtered particle flux filling the void is sputtered in a direction that is substantially parallel to the side wall surface of the space.
Claim 60
Dependent Claim
57 words
The method as defined in claim 50, wherein: the particle flux sputtered in the sputtering plasma formed from the second gas is sputtered from a target having a crystal structure preferentially oriented to maximize collimation thereof; and the lining is formed by sputtering from a target having a crystal structure not preferentially oriented to maximize collimation thereof.
Claim 61
Dependent Claim
57 words
The method as defined in claim 50, wherein said substrate is at a first position at which said lining is formed and is at a second position at which said substrate is exposed to the particle flux sputtered in the sputtering plasma formed from the second gas, wherein the first and second positions are substantially the same.
Claim 62
Dependent Claim
57 words
The method as defined in claim 50, wherein said substrate is moved from a first position at which said lining is formed to a second position at which said substrate is exposed to the particle flux sputtered in the sputtering plasma formed from the second gas, wherein the first and second positions are not substantially the same.
Claim 63
Dependent Claim
42 words
The method as defined in claim 50, further comprising providing a confining magnetic field extending from a sputtering target of the particle flux sputtered in the sputtering plasma formed from at least one of the first and second gases to confine electrons.
Claim 64
Dependent Claim
42 words
The method as defined in claim 50, wherein filling the void through the opening further comprises: applying at least one of heat and pressure to the sputtered particle flux in the space to substantially fill the space with the sputtered particle flux.
Claim 65
Dependent Claim
44 words
The method as defined in claim 50, wherein, while the lining is formed and the void is filled, there is a variance of at least one of: bias voltage applied at the substrate; heat applied to the substrate; and pressure applied to the substrate.
Claim 66
Independent Claim
77 words
A method for filling a structure in a semiconductor device comprising: providing a substrate having thereon a space to be filled, said space having a side wall surface and a bottom surface; sputtering a particle flux in a sputtering plasma to substantially cover the side wall surface of the space and not substantially cover the bottom surface of the space; and then performing a chemical vapor deposition of a material to completely and voidlessly fill the space.
Claim 67
Independent Claim
77 words
A method for filling a structure in a semiconductor device comprising: providing a substrate having thereon a space to be filled, said space having a side wall surface and a bottom surface; sputtering a particle flux in a sputtering plasma to substantially cover the side wall surface of the space and not substantially cover the bottom surface of the space; and then performing a chemical vapor deposition of a material to completely and voidlessly fill the space.
Claim 68
Dependent Claim
20 words
The method as defined in claim 58, wherein the space has an aspect ratio of at least 2 to 1.
Claim 69
Dependent Claim
70 words
The method as defined in claim 59, wherein the space has a side wall surface that is substantially orthogonal to the substrate, and wherein: the sputtered particle flux partially filling the space is sputtered in a direction that is not substantially parallel to the side wall surface of the space; and the material is deposited in a direction that is substantially parallel to the side wall surface of the space.
Claim 70
Independent Claim
111 words
A method for filling a structure in a semiconductor device comprising: providing a substrate having thereon a space to be filled, the space having a side wall surface and a bottom surface; forming a lining to substantially cover the side wall surface of the space by physical vapor deposition, the lining with the bottom surface defining a void within the space, and the lining not substantially covering the bottom surface of the space, the void having an opening thereto within the space; and then filling the void by chemical vapor deposition of a material passing through the opening, the material substantially covering the bottom surface of the space and the lining.
Claim 71
Independent Claim
111 words
A method for filling a structure in a semiconductor device comprising: providing a substrate having thereon a space to be filled, the space having a side wall surface and a bottom surface; forming a lining to substantially cover the side wall surface of the space by physical vapor deposition, the lining with the bottom surface defining a void within the space, and the lining not substantially covering the bottom surface of the space, the void having an opening thereto within the space; and then filling the void by chemical vapor deposition of a material passing through the opening, the material substantially covering the bottom surface of the space and the lining.
Claim 72
Dependent Claim
62 words
The method as defined in claim 61, wherein the space has a side wall surface that is substantially orthogonal to the substrate, and the space has an aspect ratio of at least 2 to 1, and wherein: the sputtered particle flux forming the lining is sputtered in a direction that is not substantially parallel to the side wall surface of the space.
Claim 73
Dependent Claim
32 words
The method as defined in claim 61, wherein: a sputtered particle flux from the physical vapor deposition is from a target having a crystal structure not preferentially oriented to maximize collimation thereof.
Claim 74
Dependent Claim
29 words
The method as defined in claim 61, further comprising providing a confining magnetic field extending from a target of the physical vapor deposition to the substrate to confine electrons.
Claim 75
Dependent Claim
35 words
The method as defined in claim 61, wherein filling the void through the opening further comprises: applying at least one of heat and pressure to the material in the space to substantially fill the space.
Claim 76
Dependent Claim
44 words
The method as defined in claim 61, wherein, while the lining is formed and the void is filled, there is a variance of at least one of: bias voltage applied at the substrate; heat applied to the substrate; and pressure applied to the substrate.
Claim 77
Independent Claim
274 words
A method for filling a structure in a semiconductor device comprising: providing a substrate having thereon a space to be filled having an aspect ratio of at least 2 to 1, the space having a side wall surface and a bottom surface wherein the side wall surface of the space is substantially orthogonal to at least one of the bottom surface of the space and the substrate; forming a lining substantially covering the side wall surface of the space and not substantially covering the bottom surface of the space, the lining with the bottom surface defining a void within the space, the void having an opening thereto within the space, wherein the lining is formed by deposition of a lining material in a direction that is not substantially parallel to the side wall surface of the space, wherein the lining is formed while: applying a bias voltage at said substrate within the range of about -30 to about -500 v; heating the substrate within the range of about 150° C. to about 700° C.; and applying a pressure to the substrate in a range from about 2 mTorr to about 10 mTorr; and then filling the void with a material passing through the opening in a direction that is substantially parallel to the side wall surface of the space, wherein the void is filled while: applying a bias voltage at said substrate within the range of about -30 to about 100 v; heating the substrate within the range of about -15° C. to about 150° C.; and applying a pressure to the substrate in a range from about 0.1 mTorr to about 2 mTorr.
Claim 78
Independent Claim
274 words
A method for filling a structure in a semiconductor device comprising: providing a substrate having thereon a space to be filled having an aspect ratio of at least 2 to 1, the space having a side wall surface and a bottom surface wherein the side wall surface of the space is substantially orthogonal to at least one of the bottom surface of the space and the substrate; forming a lining substantially covering the side wall surface of the space and not substantially covering the bottom surface of the space, the lining with the bottom surface defining a void within the space, the void having an opening thereto within the space, wherein the lining is formed by deposition of a lining material in a direction that is not substantially parallel to the side wall surface of the space, wherein the lining is formed while: applying a bias voltage at said substrate within the range of about -30 to about -500 v; heating the substrate within the range of about 150° C. to about 700° C.; and applying a pressure to the substrate in a range from about 2 mTorr to about 10 mTorr; and then filling the void with a material passing through the opening in a direction that is substantially parallel to the side wall surface of the space, wherein the void is filled while: applying a bias voltage at said substrate within the range of about -30 to about 100 v; heating the substrate within the range of about -15° C. to about 150° C.; and applying a pressure to the substrate in a range from about 0.1 mTorr to about 2 mTorr.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2002-11-15 | 2003-05-17 | 2003-11-16 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2006-11-15 | 2007-05-17 | 2007-11-16 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2010-11-15 | 2011-05-17 | 2011-11-16 | $7700.00 | Window Closed / Lapsed |