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US5980657A
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Alloy for enhanced filling of high aspect ratio dual damascene structures
Assignee: Micron Technology Inc
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Filing: 1998-03-10
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Granted: 1999-11-09
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Expires: 2018-03-10
Abstract
Abstract An integrated circuit alloy is described which reduces the alloy melting temperature for improved coverage of high aspect ratio features with a reduced deposition pressure. The alloy is used to fabricate metal contacts and interconnects in integrated circuits, such as memory devices. The contacts and interconnects can be high aspect ratio features formed using a dual damascene process. An aluminum interconnect alloy is described for use in an integrated circuit which includes Al, Cu, Si. Ge and Mg can also be provided in the alloy. The composition of Si+Ge+Mg provides a melting temperature of the aluminum interconnect alloy which is between 500 and 550 DEG C.
Inventors
- 👤 Paul A. Farrar
- 👤 John H. Givens
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-01 18:01
CPC Classifications
H; H10; H10W; H10W20/00; H10W20/40; H10W20/41; H10W20/44; H10W20/4403; H10W20/4405; H10W20/4407; C; C22; C22C; C22C21/00; C22C21/12; C22C21/14; H10W20/20
Claims Analysis
Total Claims: 14
Claim 1
Independent Claim
95 words
An integrated circuit memory device comprising: an array of memory cells; internal circuitry; and metal contacts and interconnects coupled to the memory array and internal circuitry, the metal contacts and interconnects comprises an aluminum interconnect alloy consists of aluminum, 4.5 to 5.5 wt percent copper, 1 to 1.5 wt percent silicon, a non-zero amount of Ge up to 1 wt percent Ge, and a non-zero amount of Mg up to 2 wt percent Mg, the composition of Si+Ge+Mg provides a melting temperature (solidus) of the aluminum interconnect alloy which is between 500 and 550° C.
Claim 2
Dependent Claim
95 words
An integrated circuit memory device comprising: an array of memory cells; internal circuitry; and metal contacts and interconnects coupled to the memory array and internal circuitry, the metal contacts and interconnects comprises an aluminum interconnect alloy consists of aluminum, 4.5 to 5.5 wt percent copper, 1 to 1.5 wt percent silicon, a non-zero amount of Ge up to 1 wt percent Ge, and a non-zero amount of Mg up to 2 wt percent Mg, the composition of Si+Ge+Mg provides a melting temperature (solidus) of the aluminum interconnect alloy which is between 500 and 550° C.
Claim 3
Dependent Claim
21 words
The integrated circuit memory device of claim 1 wherein the metal contacts and interconnects were fabricated using a dual damascene process.
Claim 4
Dependent Claim
28 words
The integrated circuit memory device of claim 1 wherein the copper of the metal alloy is 4.9 wt percent copper, and the silicon is 1.1 wt percent silicon.
Claim 5
Dependent Claim
16 words
The integrated circuit memory device of claim 1 wherein the copper is 4.9 wt percent copper.
Claim 6
Dependent Claim
16 words
The integrated circuit memory device of claim 1 wherein the silicon is 1.1 wt percent silicon.
Claim 7
Dependent Claim
85 words
An integrated circuit device comprising: internal circuitry; and metal contacts and interconnects coupled to the internal circuitry, the metal contacts and interconnects comprise an aluminum interconnect alloy comprising aluminum, 4.5 to 5.5 wt percent copper, 1 to 1.5 wt percent silicon, a non-zero amount of Ge up to 1 wt percent Ge, and a non-zero amount of Mg up to 2 wt percent Mg, the composition of Si+Ge+Mg provides a melting temperature (solidus) of the aluminum interconnect alloy which is between 500 and 550° C.
Claim 8
Dependent Claim
85 words
An integrated circuit device comprising: internal circuitry; and metal contacts and interconnects coupled to the internal circuitry, the metal contacts and interconnects comprise an aluminum interconnect alloy comprising aluminum, 4.5 to 5.5 wt percent copper, 1 to 1.5 wt percent silicon, a non-zero amount of Ge up to 1 wt percent Ge, and a non-zero amount of Mg up to 2 wt percent Mg, the composition of Si+Ge+Mg provides a melting temperature (solidus) of the aluminum interconnect alloy which is between 500 and 550° C.
Claim 9
Dependent Claim
20 words
The integrated circuit device of claim 6 wherein the metal contacts and interconnects are fabricated using a dual damascene process.
Claim 10
Dependent Claim
27 words
The integrated circuit device of claim 6 wherein the copper of the metal alloy is 4.9 wt percent copper, and the silicon is 1.1 wt percent silicon.
Claim 11
Dependent Claim
81 words
An integrated circuit device comprising: internal circuitry; and metal contacts and interconnects coupled to the internal circuitry, the metal contacts and interconnects comprise an aluminum interconnect alloy comprising aluminum, 4.9 wt percent copper, 1.1 wt percent silicon, a non-zero amount of Ge up to 1 wt percent Ge, and a non-zero amount of Mg up to 2 wt percent Mg, the composition of Si+Ge+Mg provides a melting temperature (solidus) of the aluminum interconnect alloy which is between 500 and 550° C.
Claim 12
Dependent Claim
81 words
An integrated circuit device comprising: internal circuitry; and metal contacts and interconnects coupled to the internal circuitry, the metal contacts and interconnects comprise an aluminum interconnect alloy comprising aluminum, 4.9 wt percent copper, 1.1 wt percent silicon, a non-zero amount of Ge up to 1 wt percent Ge, and a non-zero amount of Mg up to 2 wt percent Mg, the composition of Si+Ge+Mg provides a melting temperature (solidus) of the aluminum interconnect alloy which is between 500 and 550° C.
Claim 13
Dependent Claim
64 words
An integrated circuit device comprising: internal circuitry; and metal contacts and interconnects coupled to the internal circuitry, the metal contacts and interconnects comprise an aluminum interconnect alloy comprising aluminum, 4.5 to 5.5 wt percent copper, 1 to 1.5 wt percent silicon, a non-zero amount of Ge up to 1 wt percent Ge, and a non-zero amount of Mg up to 2 wt percent Mg.
Claim 14
Dependent Claim
64 words
An integrated circuit device comprising: internal circuitry; and metal contacts and interconnects coupled to the internal circuitry, the metal contacts and interconnects comprise an aluminum interconnect alloy comprising aluminum, 4.5 to 5.5 wt percent copper, 1 to 1.5 wt percent silicon, a non-zero amount of Ge up to 1 wt percent Ge, and a non-zero amount of Mg up to 2 wt percent Mg.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2002-11-08 | 2003-05-10 | 2003-11-09 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2006-11-08 | 2007-05-10 | 2007-11-09 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2010-11-08 | 2011-05-10 | 2011-11-09 | $7700.00 | Window Closed / Lapsed |