Patent US5977636A successfully refreshed from Google Patents.
US5977636A
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Method of forming an electrically conductive contact plug, method of forming a reactive or diffusion barrier layer over a substrate, integrated circuitry, and method of forming a layer of titanium boride
Assignee: Micron Technology Inc
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Filing: 1997-01-17
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Granted: 1999-11-02
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Expires: 2017-01-17
Abstract
Abstract Gaseous material is provided within a reactor having a substrate positioned therein, with the gaseous material comprising at least titanium and boron. The gaseous material is provided at conditions effective to chemical vapor deposit titanium boride on the substrate. In one implementation, the gaseous material is derived from at least two gases, with a first of such gases comprising titanium and a second of such gases comprising boron. Such can be utilized to form a reaction or diffusion barrier layer over a substrate relative to a contact opening. The invention also comprises integrated circuitry. In one implementation, a contact opening is formed into an insulating dielectric material over a substrate. An electrically conductive plugging material predominately comprising titanium boride substantially fills the contact opening. In another implementation, an electrically conductive electrode comprises a layer of titanium boride in contact with a layer of a refractory metal silicide. In still another implementation, integrated circuitry includes a contact electrode in ohmic electrical connection with a semiconductor substrate, where the contact electrode comprises a metal over the semiconductor substrate and a layer of titanium boride interposed between the metal and the semiconductor substrate.
Inventors
- 👤 Sujit Sharan
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 02:54
CPC Classifications
H; H10; H10W; H10W20/00; H10W20/01; H10W20/031; H10W20/032; H10W20/033; H10D; H10D64/00; H10D64/01; H10D64/011; H10D64/0111; H10D64/0112; H10P; H10P14/00; H10P14/40; H10P14/42; H10P14/43; H10W20/056; H10W20/40
Claims Analysis
Total Claims: 55
Claim 1
Independent Claim
71 words
A method of forming a layer of titanium boride over a substrate comprising the following steps; positioning a substrate within a chemical vapor deposition reactor; and providing gaseous material comprising at least titanium and boron within the reactor under conditions effective to chemical vapor deposit titanium boride on the substrate, the substrate comprising an outer surface of a refractory metal silicide, the titanium boride being deposited on the refractory metal silicide.
Claim 2
Independent Claim
71 words
A method of forming a layer of titanium boride over a substrate comprising the following steps; positioning a substrate within a chemical vapor deposition reactor; and providing gaseous material comprising at least titanium and boron within the reactor under conditions effective to chemical vapor deposit titanium boride on the substrate, the substrate comprising an outer surface of a refractory metal silicide, the titanium boride being deposited on the refractory metal silicide.
Claim 3
Independent Claim
101 words
A method of forming a layer of titanium boride over a substrate comprising the following steps; positioning a substrate within a chemical vapor deposition reactor; providing at least two gases within the reactor, a first of the gases comprising titanium, a second of the gases comprising boron; and providing the two gases within the reactor under conditions effective to impart a chemical reaction of the first gas with the second gas to chemical vapor deposit titanium boride on the substrate, the substrate comprising an outer surface of a refractory metal silicide, the titanium boride being deposited on the refractory metal silicide.
Claim 4
Independent Claim
101 words
A method of forming a layer of titanium boride over a substrate comprising the following steps; positioning a substrate within a chemical vapor deposition reactor; providing at least two gases within the reactor, a first of the gases comprising titanium, a second of the gases comprising boron; and providing the two gases within the reactor under conditions effective to impart a chemical reaction of the first gas with the second gas to chemical vapor deposit titanium boride on the substrate, the substrate comprising an outer surface of a refractory metal silicide, the titanium boride being deposited on the refractory metal silicide.
Claim 5
Independent Claim
125 words
A method of forming a reaction or diffusion barrier layer over a substrate relative to a contact opening comprising the following steps; providing a substrate within a chemical vapor deposition reactor, the substrate comprising a semiconductor substrate having a conductively doped diffusion region formed therein, an insulating dielectric layer being formed over the diffusion region and a contact opening formed into the insulating dielectric layer over the substrate diffusion region; providing gaseous material comprising at least titanium and boron within the reactor under conditions effective to chemical vapor deposit a reaction or diffusion barrier layer of titanium boride within the contact opening over the diffusion region; and forming at least one metal layer over the titanium boride barrier layer to substantially fill the contact opening.
Claim 6
Independent Claim
125 words
A method of forming a reaction or diffusion barrier layer over a substrate relative to a contact opening comprising the following steps; providing a substrate within a chemical vapor deposition reactor, the substrate comprising a semiconductor substrate having a conductively doped diffusion region formed therein, an insulating dielectric layer being formed over the diffusion region and a contact opening formed into the insulating dielectric layer over the substrate diffusion region; providing gaseous material comprising at least titanium and boron within the reactor under conditions effective to chemical vapor deposit a reaction or diffusion barrier layer of titanium boride within the contact opening over the diffusion region; and forming at least one metal layer over the titanium boride barrier layer to substantially fill the contact opening.
Claim 7
Dependent Claim
20 words
The method of forming a layer of titanium boride of claim 3 wherein the gaseous material includes H 2 .
Claim 8
Dependent Claim
34 words
The method of forming a layer of titanium boride of claim 3 further comprising a refractory metal silicide received on the diffusion region, and the titanium boride is deposited on the refractory metal silicide.
Claim 9
Independent Claim
221 words
A method of forming an electrically conductive contact plug comprising the following steps: providing a substrate within a chemical vapor deposition reactor, the substrate comprising monocrystalline silicon having a conductively doped diffusion region formed therein, an insulating dielectric layer being formed over the diffusion region and a contact opening formed through the insulating dielectric layer to the substrate diffusion region, a refractory metal silicide layer being in contact with the diffusion region within the contact opening; providing a gaseous titanium tetrahalide, gaseous B 2 H 6 and gaseous H 2 within the reactor at a pressure of less than about 100 Torr and at a temperature of at least about 400° C. under conditions effective to blanket chemical vapor deposit a layer of titanium boride over the substrate and within the contact opening in contact with the refractory metal silicide, the layer of titanium boride being chemical vapor deposited to a thickness which less than completely fills the contact opening, the respective volumetric ratios of titanium tetrahalide to B 2 H 6 to H 2 within the reactor being 1:2.0-2.5:10-20; removing titanium boride from outwardly of the contact opening; and plugging remaining portions of the contact opening with metal to fill the contact opening to form a contact plug to the diffusion region comprising a sandwich of refractory metal silicide/titanium boride/metal.
Claim 10
Independent Claim
221 words
A method of forming an electrically conductive contact plug comprising the following steps: providing a substrate within a chemical vapor deposition reactor, the substrate comprising monocrystalline silicon having a conductively doped diffusion region formed therein, an insulating dielectric layer being formed over the diffusion region and a contact opening formed through the insulating dielectric layer to the substrate diffusion region, a refractory metal silicide layer being in contact with the diffusion region within the contact opening; providing a gaseous titanium tetrahalide, gaseous B 2 H 6 and gaseous H 2 within the reactor at a pressure of less than about 100 Torr and at a temperature of at least about 400° C. under conditions effective to blanket chemical vapor deposit a layer of titanium boride over the substrate and within the contact opening in contact with the refractory metal silicide, the layer of titanium boride being chemical vapor deposited to a thickness which less than completely fills the contact opening, the respective volumetric ratios of titanium tetrahalide to B 2 H 6 to H 2 within the reactor being 1:2.0-2.5:10-20; removing titanium boride from outwardly of the contact opening; and plugging remaining portions of the contact opening with metal to fill the contact opening to form a contact plug to the diffusion region comprising a sandwich of refractory metal silicide/titanium boride/metal.
Claim 11
Dependent Claim
19 words
The method of forming a layer of titanium boride of claim 6 wherein the removing occurs before the plugging.
Claim 12
Dependent Claim
19 words
The method of forming a layer of titanium boride of claim 6 wherein the removing occurs after the plugging.
Claim 13
Dependent Claim
20 words
The method of forming a layer of titanium boride of claim 6 wherein the refractory metal silicide is titanium silicide.
Claim 14
Dependent Claim
45 words
An integrated circuit comprising: a semiconductor substrate; an insulating dielectric material formed over the substrate; a contact opening formed into the insulating dielectric material over the substrate; and an electrically conductive plugging material substantially filling the contact opening, the plugging material predominately comprising titanium boride.
Claim 15
Dependent Claim
45 words
An integrated circuit comprising: a semiconductor substrate; an insulating dielectric material formed over the substrate; a contact opening formed into the insulating dielectric material over the substrate; and an electrically conductive plugging material substantially filling the contact opening, the plugging material predominately comprising titanium boride.
Claim 16
Dependent Claim
40 words
The integrated circuit of claim 10 wherein the contact opening is formed completely through the insulating dielectric layer to the semiconductor substrate, all the conductive plugging material within the contact opening constituting titanium boride in contact with the semiconductor substrate.
Claim 17
Dependent Claim
50 words
The integrated circuit of claim 10 wherein the contact opening is formed completely through the insulating dielectric layer to the semiconductor substrate, a layer of a refractory metal silicide being in contact with the semiconductor substrate, the titanium boride being received over and in contact with the refractory metal silicide.
Claim 18
Dependent Claim
66 words
The integrated circuit of claim 10 wherein the semiconductor substrate comprises bulk monocrystalline silicon having an electrically conductive diffusion region formed therein, the contact opening being formed completely through the insulating dielectric layer to the diffusion region of the semiconductor substrate, a layer of titanium silicide being in contact with the semiconductor substrate, the titanium boride being received over and in contact with the titanium silicide.
Claim 19
Dependent Claim
97 words
An integrated circuit comprising: a bulk monocrystalline silicon semiconductor substrate; a conductively doped diffusion region formed within the silicon substrate; an insulating dielectric layer formed over the silicon substrate; a contact opening formed within the insulating dielectric layer to the diffusion region; and the contact opening being plugged with an electrically conductive material in ohmic electrical connection with the diffusion region; the electrically conductive plugging material within the contact opening comprising titanium silicide in contact with the silicon substrate diffusion region, titanium boride overlying and contacting the titanium silicide, and tungsten overlying and contacting the titanium boride.
Claim 20
Dependent Claim
97 words
An integrated circuit comprising: a bulk monocrystalline silicon semiconductor substrate; a conductively doped diffusion region formed within the silicon substrate; an insulating dielectric layer formed over the silicon substrate; a contact opening formed within the insulating dielectric layer to the diffusion region; and the contact opening being plugged with an electrically conductive material in ohmic electrical connection with the diffusion region; the electrically conductive plugging material within the contact opening comprising titanium silicide in contact with the silicon substrate diffusion region, titanium boride overlying and contacting the titanium silicide, and tungsten overlying and contacting the titanium boride.
Claim 21
Dependent Claim
12 words
The method of claim 1 wherein the substrate comprises a semiconductor substrate.
Claim 22
Dependent Claim
24 words
The method of claim 1 wherein the substrate comprises a semiconductor substrate, and the refractory metal silicide is in contact with the semiconductor substrate.
Claim 23
Dependent Claim
14 words
The method of claim 1 wherein the substrate comprises a monocrystalline silicon semiconductor substrate.
Claim 24
Dependent Claim
26 words
The method of claim 1 wherein the substrate comprises a monocrystalline silicon semiconductor substrate, and the refractory metal silicide is in contact with the monocrystalline silicon.
Claim 25
Independent Claim
71 words
A method of forming a layer of titanium boride over a substrate comprising the following steps; positioning a substrate within a chemical vapor deposition reactor; and providing gaseous material comprising at least titanium and boron within the reactor under conditions effective to chemical vapor deposit titanium boride on the substrate, the substrate comprising an outer surface of a refractory metal silicide, the titanium boride being deposited over the refractory metal silicide.
Claim 26
Independent Claim
71 words
A method of forming a layer of titanium boride over a substrate comprising the following steps; positioning a substrate within a chemical vapor deposition reactor; and providing gaseous material comprising at least titanium and boron within the reactor under conditions effective to chemical vapor deposit titanium boride on the substrate, the substrate comprising an outer surface of a refractory metal silicide, the titanium boride being deposited over the refractory metal silicide.
Claim 27
Dependent Claim
12 words
The method of claim 19 wherein the substrate comprises a semiconductor substrate.
Claim 28
Dependent Claim
24 words
The method of claim 19 wherein the substrate comprises a semiconductor substrate, and the refractory metal silicide is in contact with the semiconductor substrate.
Claim 29
Dependent Claim
14 words
The method of claim 19 wherein the substrate comprises a monocrystalline silicon semiconductor substrate.
Claim 30
Dependent Claim
26 words
The method of claim 19 wherein the substrate comprises a monocrystalline silicon semiconductor substrate, and the refractory metal silicide is in contact with the monocrystalline silicon.
Claim 31
Dependent Claim
12 words
The method of claim 2 wherein the substrate comprises a semiconductor substrate.
Claim 32
Dependent Claim
24 words
The method of claim 2 wherein the substrate comprises a semiconductor substrate, and the refractory metal silicide is in contact with the semiconductor substrate.
Claim 33
Dependent Claim
14 words
The method of claim 2 wherein the substrate comprises a monocrystalline silicon semiconductor substrate.
Claim 34
Dependent Claim
26 words
The method of claim 2 wherein the substrate comprises a monocrystalline silicon semiconductor substrate, and the refractory metal silicide is in contact with the monocrystalline silicon.
Claim 35
Independent Claim
101 words
A method of forming a layer of titanium boride over a substrate comprising the following steps; positioning a substrate within a chemical vapor deposition reactor; providing at least two gases within the reactor, a first of the gases comprising titanium, a second of the gases comprising boron; and providing the two gases within the reactor under conditions effective to impart a chemical reaction of the first gas with the second gas to chemical vapor deposit titanium boride on the substrate, the substrate comprising an outer surface of a refractory metal silicide, the titanium boride being deposited over the refractory metal silicide.
Claim 36
Independent Claim
101 words
A method of forming a layer of titanium boride over a substrate comprising the following steps; positioning a substrate within a chemical vapor deposition reactor; providing at least two gases within the reactor, a first of the gases comprising titanium, a second of the gases comprising boron; and providing the two gases within the reactor under conditions effective to impart a chemical reaction of the first gas with the second gas to chemical vapor deposit titanium boride on the substrate, the substrate comprising an outer surface of a refractory metal silicide, the titanium boride being deposited over the refractory metal silicide.
Claim 37
Dependent Claim
12 words
The method of claim 28 wherein the substrate comprises a semiconductor substrate.
Claim 38
Dependent Claim
24 words
The method of claim 28 wherein the substrate comprises a semiconductor substrate, and the refractory metal silicide is in contact with the semiconductor substrate.
Claim 39
Dependent Claim
14 words
The method of claim 28 wherein the substrate comprises a monocrystalline silicon semiconductor substrate.
Claim 40
Dependent Claim
26 words
The method of claim 28 wherein the substrate comprises a monocrystalline silicon semiconductor substrate, and the refractory metal silicide is in contact with the monocrystalline silicon.
Claim 41
Dependent Claim
19 words
The method of claim 3 wherein the titanium boride is deposited within the contact opening on the diffusion region.
Claim 42
Dependent Claim
28 words
The method of claim 3 further comprising planarizing the titanium boride away from outwardly of the insulating dielectric layer prior to forming the at least one metal layer.
Claim 43
Dependent Claim
34 words
The method of claim 3 further comprising planarizing the titanium boride and the at least one metal layer away from outwardly of the insulating dielectric layer after forming the at least one metal layer.
Claim 44
Independent Claim
123 words
A method of forming a reaction or diffusion barrier layer over a substrate relative to a contact opening comprising the following steps; providing a substrate within a chemical vapor deposition reactor, the substrate comprising conductively doped semiconductive material, an insulating dielectric layer being formed over the conductively doped semiconductive material and a contact opening formed into the insulating dielectric layer over the conductively doped semiconductive material; providing gaseous material comprising at least titanium and boron within the reactor under conditions effective to chemical vapor deposit a reaction or diffusion barrier layer of titanium boride within the contact opening over the conductively doped semiconductive material; and forming at least one metal layer over the titanium boride barrier layer to substantially fill the contact opening.
Claim 45
Independent Claim
123 words
A method of forming a reaction or diffusion barrier layer over a substrate relative to a contact opening comprising the following steps; providing a substrate within a chemical vapor deposition reactor, the substrate comprising conductively doped semiconductive material, an insulating dielectric layer being formed over the conductively doped semiconductive material and a contact opening formed into the insulating dielectric layer over the conductively doped semiconductive material; providing gaseous material comprising at least titanium and boron within the reactor under conditions effective to chemical vapor deposit a reaction or diffusion barrier layer of titanium boride within the contact opening over the conductively doped semiconductive material; and forming at least one metal layer over the titanium boride barrier layer to substantially fill the contact opening.
Claim 46
Dependent Claim
19 words
The method of claim 36 wherein the titanium boride is deposited within the contact opening on the diffusion region.
Claim 47
Dependent Claim
36 words
The method of forming a layer of titanium boride of claim 36 further comprising a refractory metal silicide received on the conductively doped semiconductive material, and the titanium boride is deposited on the refractory metal silicide.
Claim 48
Dependent Claim
28 words
The method of claim 36 further comprising planarizing the titanium boride away from outwardly of the insulating dielectric layer prior to forming the at least one metal layer.
Claim 49
Dependent Claim
34 words
The method of claim 36 further comprising planarizing the titanium boride and the at least one metal layer away from outwardly of the insulating dielectric layer after forming the at least one metal layer.
Claim 50
Dependent Claim
24 words
The integrated circuit of claim 10 wherein the electrically conductive plugging material comprises at least two discrete materials one of which is titanium boride.
Claim 51
Dependent Claim
44 words
An integrated circuit comprising: a substrate; an insulating dielectric material formed over the substrate; a contact opening formed into the insulating dielectric material over the substrate; and an electrically conductive plugging material substantially filling the contact opening, the plugging material predominately comprising titanium boride.
Claim 52
Dependent Claim
44 words
An integrated circuit comprising: a substrate; an insulating dielectric material formed over the substrate; a contact opening formed into the insulating dielectric material over the substrate; and an electrically conductive plugging material substantially filling the contact opening, the plugging material predominately comprising titanium boride.
Claim 53
Dependent Claim
40 words
The integrated circuit of claim 42 wherein the contact opening is formed completely through the insulating dielectric layer to the semiconductor substrate, all the conductive plugging material within the contact opening constituting titanium boride in contact with the semiconductor substrate.
Claim 54
Dependent Claim
50 words
The integrated circuit of claim 42 wherein the contact opening is formed completely through the insulating dielectric layer to the semiconductor substrate, a layer of a refractory metal silicide being in contact with the semiconductor substrate, the titanium boride being received over and in contact with the refractory metal silicide.
Claim 55
Dependent Claim
24 words
The integrated circuit of claim 42 wherein the electrically conductive plugging material comprises at least two discrete materials one of which is titanium boride.
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