US4472453A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Process for radiation free electron beam deposition
Assignee: Intersil Corp
•
Filing: 1983-07-01
•
Granted: 1984-09-18
•
Expires: 2003-07-01
Abstract
Abstract A method for the deposition of thin films on semiconductor devices is disclosed which utilizes electron-beam induced evaporation techniques. A shield device is included for preventing high energy particles, resulting from the use of the electron-beam, from reaching the semiconductor devices being coated.
Inventors
- 👤 Dorothy M. Hoffman
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-24 06:25
CPC Classifications
H; H01; H01J; H01J37/00; H01J37/30; H01J37/305; H01J37/3053; C; C23; C23C; C23C14/00; C23C14/22; C23C14/24; C23C14/28; C23C14/30
Claims Analysis
Total Claims: 5
Claim 1
Independent Claim
93 words
A method of depositing thin films in the formation of semiconductor devices comprising the steps of: (a) placing a substrate and a crucible containing a quantity of material to be evaporated in a chamber having a partial vacuum; (b) generating a beam of electrons; (c) directing said beam of electrons to impinge upon said crucible thereby heating and evaporating said material contained therein and depositing said material on said substrate; and (d) shielding said substrate and said material being deposited from exposure to high energy particles that result from steps (b) and (c).
Claim 2
Independent Claim
93 words
A method of depositing thin films in the formation of semiconductor devices comprising the steps of: (a) placing a substrate and a crucible containing a quantity of material to be evaporated in a chamber having a partial vacuum; (b) generating a beam of electrons; (c) directing said beam of electrons to impinge upon said crucible thereby heating and evaporating said material contained therein and depositing said material on said substrate; and (d) shielding said substrate and said material being deposited from exposure to high energy particles that result from steps (b) and (c).
Claim 3
Dependent Claim
21 words
The method of claim 1 wherein step (a) includes placing said crucible in a crucible holder and cooling said crucible holder.
Claim 4
Dependent Claim
78 words
The method of claim 2 wherein: Step (a) includes placing said substrate in a first subchamber comprising a portion of said chamber; Step (b) includes said generating a beam of electrons in a second subchamber comprising another portion of said chamber; Step (c) includes said directing said beam of electrons to impinge upon said crucible in said second subchamber; and Step (d) includes preventing movement of said high energy particles from said second subchamber to said first subchamber.
Claim 5
Dependent Claim
20 words
The method of claim 3 including the step of rotating said substrate within said chamber during steps (b) through (d).
References Cited (Backward Citations)
US3226271A
Cited
US3420704A
Cited
US3554512A
Cited
US3756847A
Cited
US3864162A
Cited
US3996469A
Cited
US4184448A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1987-09-18 | 1988-03-19 | 1988-09-18 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1991-09-18 | 1992-03-19 | 1992-09-18 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1995-09-18 | 1996-03-19 | 1996-09-18 | $7700.00 | Window Closed / Lapsed |