Patent US4472453A successfully refreshed from Google Patents.
US4472453A
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Process for radiation free electron beam deposition
Assignee: Intersil Corp
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Filing: 1983-07-01
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Granted: 1984-09-18
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Expires: 2003-07-01
Abstract
Abstract A method for the deposition of thin films on semiconductor devices is disclosed which utilizes electron-beam induced evaporation techniques. A shield device is included for preventing high energy particles, resulting from the use of the electron-beam, from reaching the semiconductor devices being coated.
Inventors
- 👤 Dorothy M. Hoffman
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-24 16:27
CPC Classifications
H; H01; H01J; H01J37/00; H01J37/30; H01J37/305; H01J37/3053; C; C23; C23C; C23C14/00; C23C14/22; C23C14/24; C23C14/28; C23C14/30
Claims Analysis
Total Claims: 5
Claim 1
Independent Claim
93 words
A method of depositing thin films in the formation of semiconductor devices comprising the steps of: (a) placing a substrate and a crucible containing a quantity of material to be evaporated in a chamber having a partial vacuum; (b) generating a beam of electrons; (c) directing said beam of electrons to impinge upon said crucible thereby heating and evaporating said material contained therein and depositing said material on said substrate; and (d) shielding said substrate and said material being deposited from exposure to high energy particles that result from steps (b) and (c).
Claim 2
Independent Claim
93 words
A method of depositing thin films in the formation of semiconductor devices comprising the steps of: (a) placing a substrate and a crucible containing a quantity of material to be evaporated in a chamber having a partial vacuum; (b) generating a beam of electrons; (c) directing said beam of electrons to impinge upon said crucible thereby heating and evaporating said material contained therein and depositing said material on said substrate; and (d) shielding said substrate and said material being deposited from exposure to high energy particles that result from steps (b) and (c).
Claim 3
Dependent Claim
21 words
The method of claim 1 wherein step (a) includes placing said crucible in a crucible holder and cooling said crucible holder.
Claim 4
Dependent Claim
78 words
The method of claim 2 wherein: Step (a) includes placing said substrate in a first subchamber comprising a portion of said chamber; Step (b) includes said generating a beam of electrons in a second subchamber comprising another portion of said chamber; Step (c) includes said directing said beam of electrons to impinge upon said crucible in said second subchamber; and Step (d) includes preventing movement of said high energy particles from said second subchamber to said first subchamber.
Claim 5
Dependent Claim
20 words
The method of claim 3 including the step of rotating said substrate within said chamber during steps (b) through (d).
References Cited (Backward Citations)
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1987-09-18 | 1988-03-19 | 1988-09-18 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1991-09-18 | 1992-03-19 | 1992-09-18 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1995-09-18 | 1996-03-19 | 1996-09-18 | $7700.00 | Window Closed / Lapsed |