US5972771A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Enhancing semiconductor structure surface area using HSG and etching
Assignee: Round Rock Research LLC
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Filing: 1996-10-03
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Granted: 1999-10-26
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Expires: 2016-10-03
Abstract
Abstract A method for forming HSG polysilicon with reduced dielectric bridging and increased capacitance. A first polysilicon layer is deposited and doped with impurities to increase conductivity. A second polysilicon layer is deposited at a reduced temperature to cause a nucleation of the second polysilicon layer. Grains are formed on the surface of the second polysilicon layer as a result of the nucleation. Next a wet etch is performed to remove portions of the polysilicon grains and portions of the first polysilicon layer. The duration of the wet etch is controlled to retain a roughened surface area. The size of the grains decreases during the wet etch and the distance between the grains increases. A dielectric layer is deposited to overlie the rough polysilicon following the wet etch. The thickness of the dielectric layer tends to be uniform thereby reducing bridging of the dielectric between the grains of the of the polysilicon.
Inventors
- 👤 Thomas A. Figura
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-03 21:17
CPC Classifications
H; H10; H10D; H10D1/00; H10D1/60; H10D1/68; H10D1/692; H10D1/711; H10D1/712; Y; Y10; Y10S; Y10S438/00; Y10S438/942; Y10S438/945; Y10S438/964
Claims Analysis
Total Claims: 12
Claim 1
Independent Claim
58 words
A method for forming a capacitor plate, comprising the following steps: forming an undoped polysilicon layer having a hemispherical grained surface overlying a substrate; and etching said undoped polysilicon layer to decrease a size of said grains and to increase a distance between said grains, said undoped polysilicon layer forming at least a portion of the capacitor plate.
Claim 2
Independent Claim
58 words
A method for forming a capacitor plate, comprising the following steps: forming an undoped polysilicon layer having a hemispherical grained surface overlying a substrate; and etching said undoped polysilicon layer to decrease a size of said grains and to increase a distance between said grains, said undoped polysilicon layer forming at least a portion of the capacitor plate.
Claim 3
Dependent Claim
33 words
The method as specified in claim 1, wherein said step of forming said polysilicon layer comprises depositing said polysilicon layer at a temperature and pressure that forms hemispherical grains of said polysilicon layer.
Claim 4
Independent Claim
87 words
A method for forming a capacitor, comprising the following steps: providing a granulated undoped first polysilicon capacitor storage plate having a plurality of grains on a surface thereof; performing a wet etch of said undoped first polysilicon capacitor storage plate without masking of said undoped first polysilicon capacitor storage plate, thereby decreasing a size of said grains and increasing a distance between said grains; forming a dielectric layer to overlie said first polysilicon capacitor storage plate; and forming a second capacitor storage plate overlying said dielectric layer.
Claim 5
Independent Claim
87 words
A method for forming a capacitor, comprising the following steps: providing a granulated undoped first polysilicon capacitor storage plate having a plurality of grains on a surface thereof; performing a wet etch of said undoped first polysilicon capacitor storage plate without masking of said undoped first polysilicon capacitor storage plate, thereby decreasing a size of said grains and increasing a distance between said grains; forming a dielectric layer to overlie said first polysilicon capacitor storage plate; and forming a second capacitor storage plate overlying said dielectric layer.
Claim 6
Dependent Claim
29 words
The method as specified in claim 3, wherein said step of forming said dielectric layer comprises depositing a conformal dielectric material to overlie said first polysilicon capacitor storage plate.
Claim 7
Independent Claim
133 words
A method for forming a capacitor, comprising the following steps: forming an undoped polysilicon base layer to overlie a substrate, said undoped polysilicon base layer functioning as a storage node capacitor plate of said capacitor; adjusting a temperature and pressure of said undoped polysilicon base layer to form grains of said undoped polysilicon base layer on a surface of said undoped polysilicon base layer; performing a wet etch of said undoped polysilicon base layer; controlling a duration of said wet etch to control a surface area of said undoped polysilicon base layer remaining subsequent to said wet etch; forming a dielectric layer to overlie said base layer; and forming a cell plate layer to overlie said dielectric layer, wherein said base layer, said dielectric layer and said cell plate layer form said capacitor.
Claim 8
Independent Claim
133 words
A method for forming a capacitor, comprising the following steps: forming an undoped polysilicon base layer to overlie a substrate, said undoped polysilicon base layer functioning as a storage node capacitor plate of said capacitor; adjusting a temperature and pressure of said undoped polysilicon base layer to form grains of said undoped polysilicon base layer on a surface of said undoped polysilicon base layer; performing a wet etch of said undoped polysilicon base layer; controlling a duration of said wet etch to control a surface area of said undoped polysilicon base layer remaining subsequent to said wet etch; forming a dielectric layer to overlie said base layer; and forming a cell plate layer to overlie said dielectric layer, wherein said base layer, said dielectric layer and said cell plate layer form said capacitor.
Claim 9
Independent Claim
62 words
A method for increasing a polysilicon surface area, comprising: forming a polysilicon structure having a surface and a surface area, comprising: forming a first polysilicon layer; forming a second polysilicon layer having a hemispherical grained surface on the first polysilicon layer; and etching into the surface of the polysilicon structure such that the surface is more roughened, thus increasing the surface area.
Claim 10
Independent Claim
62 words
A method for increasing a polysilicon surface area, comprising: forming a polysilicon structure having a surface and a surface area, comprising: forming a first polysilicon layer; forming a second polysilicon layer having a hemispherical grained surface on the first polysilicon layer; and etching into the surface of the polysilicon structure such that the surface is more roughened, thus increasing the surface area.
Claim 11
Dependent Claim
16 words
The method of claim 6, wherein the etching removes material only from the second polysilicon layer.
Claim 12
Dependent Claim
17 words
The method of claim 6, wherein the etching removes material of the first and second polysilicon layers.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2002-10-25 | 2003-04-26 | 2003-10-26 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2006-10-25 | 2007-04-26 | 2007-10-26 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2010-10-25 | 2011-04-26 | 2011-10-26 | $7700.00 | Window Closed / Lapsed |