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Patent US5970309A successfully refreshed from Google Patents.
US5970309A
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Method of manufacturing a capacitor and a capacitor electrode in semiconductor device
Assignee: Samsung Electronics Co Ltd
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Filing: 1997-10-15
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Granted: 1999-10-19
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Expires: 2017-10-15
Abstract
Abstract A method of manufacturing a semiconductor capacitor electrode by growing a metal compound layer over polysilicon storage nodes. The metal compound layer readily growing on the polysilicon storage nodes, but not on portions of an insulating layer between adjacent polysilicon storage nodes.
Inventors
- 👤 Jung-min Ha
- 👤 Byung-lyul Park
- 👤 Dae-hong Ko
- 👤 Sang-in Lee
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 04:03
CPC Classifications
H; H10; H10B; H10B12/00; H10B12/01; H10B12/02; H10B12/03; H10D; H10D1/00; H10D1/60; H10D1/68; H10D1/692; H10D1/711
Claims Analysis
Total Claims: 24
Claim 1
Independent Claim
139 words
A method of manufacturing a capacitor electrode in a semiconductor device, comprising the steps of: forming an insulating layer on a substrate; forming a plurality of polysilicon storage nodes on said insulating layer such that portions of the insulating layer are exposed between adjacent ones of the plurality of storage nodes; forming a metal compound layer having a first portion on the plurality of polysilicon nodes and a second portion on the exposed portions of the insulating layer wherein the first portion is formed preferentially with respect to the second portion so that the first portion is thicker than the second portion wherein the metal compound layer comprises a metal compound chosen from the group consisting of a nitride of a metal and a carbide of a metal; and selectively removing the second portion of the metal compound layer.
Claim 2
Independent Claim
139 words
A method of manufacturing a capacitor electrode in a semiconductor device, comprising the steps of: forming an insulating layer on a substrate; forming a plurality of polysilicon storage nodes on said insulating layer such that portions of the insulating layer are exposed between adjacent ones of the plurality of storage nodes; forming a metal compound layer having a first portion on the plurality of polysilicon nodes and a second portion on the exposed portions of the insulating layer wherein the first portion is formed preferentially with respect to the second portion so that the first portion is thicker than the second portion wherein the metal compound layer comprises a metal compound chosen from the group consisting of a nitride of a metal and a carbide of a metal; and selectively removing the second portion of the metal compound layer.
Claim 3
Dependent Claim
22 words
The method of claim 1, wherein the metal compound layer consists essentially of WN x , where x is a positive integer.
Claim 4
Dependent Claim
33 words
The method of claim 1, wherein the metal compound layer comprises a nitride of a metal selected from a group consisting of tungsten (W), molybdenum (Mo), titanium (Ti), tantalum (Ta) or zirconium (Zr).
Claim 5
Dependent Claim
33 words
The method of claim 1, wherein the metal compound layer comprises a carbide of a metal selected from a group consisting of tungsten (W), molybdenum (Mo), titanium (Ti), tantalum (Ta) and zirconium (Zr).
Claim 6
Dependent Claim
11 words
The method of claim 1, wherein the insulating layer comprises BPSG.
Claim 7
Independent Claim
234 words
A method of manufacturing a capacitor in a semiconductor device, comprising the steps of: forming an insulating layer on a silicon substrate wherein said insulating layer defines a plurality of contact holes therein; forming a plurality of storage nodes on said insulating layer wherein each of said storage nodes corresponds to a respective one of said contact holes such that portions of the insulating layer are exposed between adjacent ones of the plurality of storage nodes and each one of the plurality of storage nodes is in contact with the silicon substrate through a corresponding one of the plurality of contact holes; forming a first metal compound layer having a first portion on the plurality of storage nodes and a second portion on the exposed portions of the insulating layer wherein the first portion is formed preferentially with respect to the second portion so that the first portion is thicker than the second portion wherein the metal compound layer comprises a metal compound chosen from the group consisting of a nitride of a metal and a carbide of a metal; selectively removing the second portion of the metal compound layer to electrically separate adjacent ones of the plurality of storage nodes; forming a dielectric layer over the first portion of the first metal compound layer and the exposed portions of the insulating layer; and forming a second metal compound layer over the dielectric layer.
Claim 8
Independent Claim
234 words
A method of manufacturing a capacitor in a semiconductor device, comprising the steps of: forming an insulating layer on a silicon substrate wherein said insulating layer defines a plurality of contact holes therein; forming a plurality of storage nodes on said insulating layer wherein each of said storage nodes corresponds to a respective one of said contact holes such that portions of the insulating layer are exposed between adjacent ones of the plurality of storage nodes and each one of the plurality of storage nodes is in contact with the silicon substrate through a corresponding one of the plurality of contact holes; forming a first metal compound layer having a first portion on the plurality of storage nodes and a second portion on the exposed portions of the insulating layer wherein the first portion is formed preferentially with respect to the second portion so that the first portion is thicker than the second portion wherein the metal compound layer comprises a metal compound chosen from the group consisting of a nitride of a metal and a carbide of a metal; selectively removing the second portion of the metal compound layer to electrically separate adjacent ones of the plurality of storage nodes; forming a dielectric layer over the first portion of the first metal compound layer and the exposed portions of the insulating layer; and forming a second metal compound layer over the dielectric layer.
Claim 9
Dependent Claim
34 words
The method of claim 6, wherein the first metal compound layer comprises a nitride of a metal selected from a group consisting of tungsten (W), molybdenum (Mo), titanium (Ti), tantalum (Ta) and zirconium (Zr).
Claim 10
Dependent Claim
34 words
The method of claim 6, wherein the first metal compound layer comprises a carbide of a metal selected from a group consisting of tungsten (W), molybdenum (Mo), titanium (Ti), tantalum (Ta) and zirconium (Zr).
Claim 11
Dependent Claim
41 words
The method of claim 6, wherein the dielectric layer comprises one selected from a group consisting of tantalum pentoxide (Ta 2 O 5 ), (Ba, Sr)TiO 3 , and Pb(Zr, Ti)O 3 , wherein the storage nodes are formed of polysilicon.
Claim 12
Dependent Claim
34 words
The method of claim 6, wherein the second metal compound layer comprises a nitride of a metal selected from a group consisting of tungsten (W), molybdenum (Mo), titanium (Ti), tantalum (Ta), and zirconium (Zr).
Claim 13
Dependent Claim
34 words
The method of claim 6, wherein the second metal compound layer comprises a carbide of a metal selected from a group consisting of tungsten (W), molybdenum (Mo), titanium (Ti), tantalum (Ta), and zirconium (Zr).
Claim 14
Independent Claim
253 words
A method of manufacturing a capacitor in a semiconductor device, comprising the steps of: forming an insulating layer on a silicon substrate wherein said insulating layer defines a plurality of contact holes therein; forming a plurality of polysilicon storage nodes on the insulating layer such that portions of the insulating layer are exposed between adjacent ones of the plurality of storage nodes and each one of the plurality of storage nodes is in contact with the silicon substrate through a corresponding one of the plurality of contact holes; forming by low pressure chemical vapor deposition a metal nitride compound layer having a first portion on the plurality of storage nodes and a second portion on the exposed portions of the insulating layer wherein the first portion is formed preferentially with respect to the second portion so that the first portion is thicker than the first portion; selectively removing by etch back the second portion of the metal nitride compound layer to electrically separate adjacent ones of the plurality of storage nodes wherein said step of selectively removing said second portion of the metal compound layer comprises etching back said first and second portions of the metal compound layer so that said second portion is removed and so that some of said first portion remains on said plurality of storage nodes; forming a dielectric layer over the first portion of the metal nitride compound layer and the exposed portion of the insulating layer; and forming a second metal compound layer over the dielectric layer.
Claim 15
Independent Claim
253 words
A method of manufacturing a capacitor in a semiconductor device, comprising the steps of: forming an insulating layer on a silicon substrate wherein said insulating layer defines a plurality of contact holes therein; forming a plurality of polysilicon storage nodes on the insulating layer such that portions of the insulating layer are exposed between adjacent ones of the plurality of storage nodes and each one of the plurality of storage nodes is in contact with the silicon substrate through a corresponding one of the plurality of contact holes; forming by low pressure chemical vapor deposition a metal nitride compound layer having a first portion on the plurality of storage nodes and a second portion on the exposed portions of the insulating layer wherein the first portion is formed preferentially with respect to the second portion so that the first portion is thicker than the first portion; selectively removing by etch back the second portion of the metal nitride compound layer to electrically separate adjacent ones of the plurality of storage nodes wherein said step of selectively removing said second portion of the metal compound layer comprises etching back said first and second portions of the metal compound layer so that said second portion is removed and so that some of said first portion remains on said plurality of storage nodes; forming a dielectric layer over the first portion of the metal nitride compound layer and the exposed portion of the insulating layer; and forming a second metal compound layer over the dielectric layer.
Claim 16
Dependent Claim
16 words
The method of claim 12, wherein the metal nitride compound layer comprises a WN x layer.
Claim 17
Dependent Claim
55 words
A method according to claim 6 wherein said step of selectively removing said second portion of the metal compound layer comprises etching back said first and second portions of the metal compound layer so that said second portion is removed and so that some of said first portion remains on said plurality of storage nodes.
Claim 18
Dependent Claim
55 words
A method according to claim 1 wherein said step of selectively removing said second portion of the metal compound layer comprises etching back said first and second portions of the metal compound layer so that said second portion is removed and so that some of said first portion remains on said plurality of storage nodes.
Claim 19
Dependent Claim
46 words
A method according to claim 2 wherein the step of forming the metal compound layer consisting essentially of WN x comprises forming the metal compound layer using low pressure chemical vapor deposition at a deposition temperature of 600° C., at a deposition pressure of 0.1 Torr.
Claim 20
Dependent Claim
47 words
A method according to claim 2 wherein the step of forming the metal compound layer consisting essentially of WN x comprises forming the metal compound layer using WF 6 at a flow rate of 4 sccm and using NH 3 at a flow rate of 20 sccm.
Claim 21
Dependent Claim
53 words
A method according to claim 7 wherein the first metal compound layer comprises a nitride of tungsten and wherein the step of forming the metal compound layer comprises forming the metal compound layer using low pressure chemical vapor deposition at a deposition temperature of 600° C., at a deposition pressure of 0.1 Torr.
Claim 22
Dependent Claim
54 words
A method according to claim 7 wherein the first metal compound layer comprises a nitride of tungsten and wherein the step of forming the metal compound layer comprises forming the metal compound layer using WF 6 at a flow rate of 4 sccm and using NH 3 at a flow rate of 20 sccm.
Claim 23
Dependent Claim
43 words
A method according to claim 13 wherein the step of forming the metal nitride compound layer comprises forming the metal nitride compound layer using low pressure chemical vapor deposition at a deposition temperature of 600° C., at a deposition pressure of 0.1 Torr.
Claim 24
Dependent Claim
44 words
A method according to claim 13 wherein the step of forming the metal nitride compound layer comprises forming the metal nitride compound layer using WF 6 at a flow rate of 4 sccm and using NH 3 at a flow rate of 20 sccm.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2002-10-18 | 2003-04-19 | 2003-10-19 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2006-10-18 | 2007-04-19 | 2007-10-19 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2010-10-18 | 2011-04-19 | 2011-10-19 | $7700.00 | Window Closed / Lapsed |