US5959308A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Epitaxial layer on a heterointerface
Assignee: Texas Instruments Inc
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Filing: 1993-01-29
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Granted: 1999-09-28
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Expires: 2013-01-29
Abstract
Abstract Heteroepitaxy of lattice-mismatched semiconductor materials such as GaAs (110) on silicon (102) is accomplished by formation of a defect annihilating grid (104) on the silicon (102) prior to the epitaxy of the GaAs (110).
Inventors
- 👤 Hisashi Shichijo
- 👤 Richard J. Matyi
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 01:28
CPC Classifications
H; H10; H10P; H10P14/00; H10P14/20; H10P14/29; H10P14/2901; H10P14/2902; H10P14/2905; H10P14/32; H10P14/3202; H10P14/3214; H10P14/3221; H10P14/3242; H10P14/3244; H10P14/3251; H10P14/3252; H10P14/34; H10P14/3402; H10P14/3414; H10P14/3421; H10P14/36; Y; Y10; Y10S; Y10S438/00; Y10S438/933; Y10S438/938
Claims Analysis
Total Claims: 10
Claim 1
Independent Claim
37 words
An integrated circuit, comprising: (a) a first layer over a grid having a diameter on the order of 10 μm on a layer of a second material; and (b) devices formed in said first layer and interconnected.
Claim 2
Dependent Claim
37 words
An integrated circuit, comprising: (a) a first layer over a grid having a diameter on the order of 10 μm on a layer of a second material; and (b) devices formed in said first layer and interconnected.
Claim 3
Dependent Claim
30 words
The integrated circuit of claim 1, wherein: (a) said first layer is Al x Ga 1-x As; where x is at least one and (b) said second material is silicon.
Claim 4
Dependent Claim
34 words
The integrated circuit of claim 1; wherein: a) said first layer includes a superlattice; and b) said grid is made of material from the group consisting of silicon dioxide, silicon nitride, and combinations thereof.
Claim 5
Independent Claim
105 words
A device having an epitaxial layer on a heterointerface having a minimum of dislocations propagating to or near an outer surface of said epitaxial layer in the region wherein devices will be fabricated, comprising: (a) a substrate having heterointerface thereon whereat most dislocations are generated and propagate up to about 20 μm and a grid having a diameter on the order of 10 μm at said heterointerface for absorbing said dislocations, said grid composed of intersecting and non-intersecting lines forming plural quadrilaterals on said surface; and (b) a continuous monocrystalline semiconductor layer extending over at least three adjacent non-intersecting lines of said grid and heterointerface.
Claim 6
Independent Claim
105 words
A device having an epitaxial layer on a heterointerface having a minimum of dislocations propagating to or near an outer surface of said epitaxial layer in the region wherein devices will be fabricated, comprising: (a) a substrate having heterointerface thereon whereat most dislocations are generated and propagate up to about 20 μm and a grid having a diameter on the order of 10 μm at said heterointerface for absorbing said dislocations, said grid composed of intersecting and non-intersecting lines forming plural quadrilaterals on said surface; and (b) a continuous monocrystalline semiconductor layer extending over at least three adjacent non-intersecting lines of said grid and heterointerface.
Claim 7
Dependent Claim
12 words
The device of claim 4 wherein said quadrilateral is substantially a rectangle.
Claim 8
Independent Claim
104 words
A device having an epitaxial layer on a heterointerface having a minimum of dislocations propagating to or near the outer surface of said epitaxial layer in the region wherein devices will be fabricated, comprising: a) a substrate having a heterointerface thereon whereat most dislocations are generated and propagate up to about 20 μm and a grid at said heterointerface for absorbing said dislocations, said grid composed of intersecting lines forming quadrilaterals, the distance between opposing sides of each quadrilateral being about 10 micrometers; and b) a semiconductor layer on said grid and said heterointerface characterized by single crystal regions on portions of said heterointerface.
Claim 9
Independent Claim
104 words
A device having an epitaxial layer on a heterointerface having a minimum of dislocations propagating to or near the outer surface of said epitaxial layer in the region wherein devices will be fabricated, comprising: a) a substrate having a heterointerface thereon whereat most dislocations are generated and propagate up to about 20 μm and a grid at said heterointerface for absorbing said dislocations, said grid composed of intersecting lines forming quadrilaterals, the distance between opposing sides of each quadrilateral being about 10 micrometers; and b) a semiconductor layer on said grid and said heterointerface characterized by single crystal regions on portions of said heterointerface.
Claim 10
Dependent Claim
12 words
The device of claim 6 wherein said quadrilateral is substantially a rectangle.
References Cited (Backward Citations)
US3963539A
Cited
US3963538A
Cited
GB2132017A
Cited
US4632712A
Cited
JPS61294877A
Cited
US4806996A
Cited
JPS63126288A
Cited
US4872038A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2002-09-27 | 2003-03-29 | 2003-09-28 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2006-09-27 | 2007-03-29 | 2007-09-28 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2010-09-27 | 2011-03-29 | 2011-09-28 | $7700.00 | Window Closed / Lapsed |