US5956612A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Trench/hole fill processes for semiconductor fabrication
Assignee: Micron Technology Inc
•
Filing: 1996-08-09
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Granted: 1999-09-21
•
Expires: 2016-08-09
Abstract
Abstract A contact space filled with conductive material having good step coverage is disclosed. The contact space is formed in a dielectric layer with an upper surface. The contact space has sidewalls comprised of the dielectric layer and a bottom comprised of an underlying layer. The contact space is filled by first depositing a layer of an amorphous material such as TiAl 3 over the bottom and sidewalls of the contact space, then filling the contact space with a metallic fill material such as an aluminum-containing fill material. The amorphous material is chosen particularly to have low reactivity with the metallic fill material, so that mobility of the metallic fill material over the surface upon which it is deposited is facilitated.
Inventors
- 👤 Richard L. Elliott
- 👤 John H. Givens
- 👤 Guy F. Hudson
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-01 12:13
CPC Classifications
H; H10; H10W; H10W20/00; H10W20/01; H10W20/031; H10W20/032; H10W20/033; H10W20/056
Claims Analysis
Total Claims: 106
Claim 1
Independent Claim
84 words
A method of forming a contact structure comprising: forming, through a dielectric layer having a top surface, a contact space to be filled, said contact space having sidewalls and a bottom, said contact space exposing a semiconductor material; directionally depositing a layer of an amorphous material over the bottom and sidewalls of the contact space, said amorphous material being selected from the group consisting of a metallics, intermetallics, ceramics, their compounds and combinations thereof; and depositing a metallic fill material within said contact space.
Claim 2
Independent Claim
84 words
A method of forming a contact structure comprising: forming, through a dielectric layer having a top surface, a contact space to be filled, said contact space having sidewalls and a bottom, said contact space exposing a semiconductor material; directionally depositing a layer of an amorphous material over the bottom and sidewalls of the contact space, said amorphous material being selected from the group consisting of a metallics, intermetallics, ceramics, their compounds and combinations thereof; and depositing a metallic fill material within said contact space.
Claim 3
Dependent Claim
17 words
The method as defined in claim 1, wherein said amorphous material comprises tantalum nitride and its compounds.
Claim 4
Dependent Claim
17 words
The method as defined in claim 1, wherein said amorphous material comprises tungsten nitride and its compounds.
Claim 5
Dependent Claim
18 words
The method as defined in claim 1, wherein said amorphous material comprises titanium aluminum nitride and its compounds.
Claim 6
Dependent Claim
17 words
The method as defined in claim 1, wherein said amorphous material comprises an intermetallic and its compounds.
Claim 7
Dependent Claim
16 words
The method as defined in claim 5, wherein said intermetallic comprises Ti x Al y .
Claim 8
Dependent Claim
12 words
The method as defined in claim 6, wherein said intermetallic comprises TiAl.
Claim 9
Dependent Claim
14 words
The method as defined in claim 6, wherein said intermetallic comprises TiAl 3 .
Claim 10
Dependent Claim
16 words
The method as defined in claim 5, wherein said intermetallic comprises Ti x Si y .
Claim 11
Dependent Claim
14 words
The method as defined in claim 9, wherein said intermetallic comprises TiSi 2 .
Claim 12
Dependent Claim
14 words
The method as defined in claim 1, wherein said metallic fill material comprises aluminum.
Claim 13
Dependent Claim
16 words
The method as defined in claim 1, wherein said metallic fill material comprises an aluminum alloy.
Claim 14
Dependent Claim
16 words
The method as defined in claim 1, wherein said metallic fill material comprises an aluminum-copper alloy.
Claim 15
Dependent Claim
16 words
The method as defined in claim 1, wherein said metallic fill material comprises an aluminum-germanium alloy.
Claim 16
Dependent Claim
16 words
The method as defined in claim 1, wherein said metallic fill material comprises an aluminum-silicon alloy.
Claim 17
Dependent Claim
16 words
The method as defined in claim 1, wherein said metallic fill material comprises an aluminum-copper-silicon alloy.
Claim 18
Dependent Claim
55 words
The method as defined in claim 1, wherein depositing a metallic fill material within said contact space comprises: depositing a first layer of said metallic fill material at a temperature less than about 200° C.; and depositing said metallic fill material to fill said contact space at a temperature not less than about 200° C.
Claim 19
Dependent Claim
35 words
The method as defined in claim 17, wherein depositing a first layer comprises depositing said first layer of said metallic fill material at a temperature between about 20° C. to less than about 200° C.
Claim 20
Dependent Claim
51 words
The method as defined in claim 1, wherein depositing a metallic fill material within said contact space comprises: depositing said metallic fill material in said contact space; and pressurizing said fill material in an inert gas whereby said metallic fill material flows to fill any voids formed during the deposition thereof.
Claim 21
Dependent Claim
67 words
The method as defined in claim 1, wherein depositing a metallic fill material within said contact space comprises: depositing Al or an Al alloy fill material in said contact space; and annealing said Al or Al alloy fill material at a temperature in the range of about 350° C. to about 650° C. for a time in the range of about 5 second to about 360 seconds.
Claim 22
Dependent Claim
54 words
The method as defined in claim 1, wherein depositing a metallic fill material within said contact space comprises: depositing said metallic fill material in said contact space; and annealing said metallic fill material at a temperature range and duration sufficient to allow said metallic fill material to become viscous and flow to fill voids.
Claim 23
Dependent Claim
42 words
The method as defined in claim 21, wherein depositing a metallic fill material within said contact space further comprises before annealing said metallic fill material: depositing a layer of energy absorbent material on said metallic fill material deposited in said contact space.
Claim 24
Dependent Claim
15 words
The method as defined in claim 22, wherein said energy absorbent material comprises titanium nitride.
Claim 25
Dependent Claim
15 words
The method as defined in claim 22, wherein said energy absorbent material comprises silicon carbide.
Claim 26
Dependent Claim
14 words
The method as defined in claim 22, wherein said energy absorbent material comprises carbon.
Claim 27
Dependent Claim
20 words
The method as defined in claim 1, further comprising: removing all material above said top surface of said dielectric layer.
Claim 28
Dependent Claim
23 words
The method as defined in claim 26, wherein removing all material above said top surface of said dielectric layer comprises an etch back.
Claim 29
Dependent Claim
24 words
The method as defined in claim 26, wherein removing all material above said top surface of said dielectric layer comprises a chemical mechanical polishing.
Claim 30
Dependent Claim
54 words
The method as defined in claim 1, further comprising after forming a contact space and before depositing a layer of an amorphous material: depositing a layer of adhesion-promoting material, said adhesion-promoting material being capable of reacting with oxygen and carbon, whereby adhesion to said sides and said bottom of said contact space is promoted.
Claim 31
Dependent Claim
25 words
The method as defined in claim 29, further comprising after depositing a layer of an amorphous material: depositing a flow-assisting layer upon said amorphous layer.
Claim 32
Dependent Claim
16 words
The method as defined in claim 29, wherein said adhesion promoting material comprises a refractory metal.
Claim 33
Dependent Claim
13 words
The method as defined in claim 31, wherein said refractory metal comprises titanium.
Claim 34
Dependent Claim
15 words
The method as defined in claim 1, wherein said contact space comprises a contact hole.
Claim 35
Dependent Claim
14 words
The method as defined in claim 1, wherein said contact space comprises a trench.
Claim 36
Dependent Claim
17 words
The method as defined in claim 1, wherein said contact space comprises a trench and a hole.
Claim 37
Independent Claim
100 words
A method of forming a contact structure in the manufacture of a semiconductor device, said method comprising: forming, through a dielectric layer having a top surface, a contact space to be filled, said contact space having sidewalls comprised of said dielectric layer and a bottom comprised of an underlying layer, said contact space exposing a semiconductor material, said dielectric layer being situated on a semiconductor wafer; depositing a layer of an amorphous material over the bottom and sidewalls of the contact space; depositing aluminum within said contact space; and removing all material above the top surface of the dielectric layer.
Claim 38
Independent Claim
100 words
A method of forming a contact structure in the manufacture of a semiconductor device, said method comprising: forming, through a dielectric layer having a top surface, a contact space to be filled, said contact space having sidewalls comprised of said dielectric layer and a bottom comprised of an underlying layer, said contact space exposing a semiconductor material, said dielectric layer being situated on a semiconductor wafer; depositing a layer of an amorphous material over the bottom and sidewalls of the contact space; depositing aluminum within said contact space; and removing all material above the top surface of the dielectric layer.
Claim 39
Dependent Claim
35 words
The method according to claim 36, wherein depositing a layer of an amorphous material is a process selected from the group consisting of sputter depositing, CVD, high-density plasma deposition, electroplating depositing, and electrodeless plating deposition.
Claim 40
Dependent Claim
47 words
The method as defined in claim 37, wherein depositing a layer of an amorphous material over said bottom and said sidewalls of said contact space comprises sputter depositing a layer of an amorphous intermetallic over the bottom and sidewalls of the contact space from an intermetallic target.
Claim 41
Dependent Claim
52 words
The method as defined in claim 37, wherein depositing a layer of an amorphous compound or material over said bottom and said sidewalls of said contact space comprises sputter depositing a layer of an amorphous metallic and its compounds over the bottom and sidewalls of the contact space from a metallic target.
Claim 42
Dependent Claim
47 words
The method as defined in claim 37, wherein depositing a layer of an amorphous material over said bottom and said sidewalls of said contact space comprises sputter depositing a layer of an amorphous ceramic over the bottom and sidewalls of the contact space from a ceramic target.
Claim 43
Independent Claim
127 words
A method of forming a contact structure in the manufacture of a semiconductor device, said method comprising: forming, through a dielectric layer having a top surface, a contact space to be filled, said contact space having sidewalls comprised of said dielectric layer and a bottom comprised of an underlying layer, said contact space exposing a semiconductor material, said dielectric layer being situated on a semiconductor wafer; depositing a layer of titanium conformably over the bottom and sidewalls of said contact space; depositing a layer of amorphous Ti x Al y conformably over the layer of titanium over the bottom and sidewalls of the contact space; depositing a fill material comprising aluminum within said contact space; and removing all material above the top surface of the dielectric layer.
Claim 44
Independent Claim
127 words
A method of forming a contact structure in the manufacture of a semiconductor device, said method comprising: forming, through a dielectric layer having a top surface, a contact space to be filled, said contact space having sidewalls comprised of said dielectric layer and a bottom comprised of an underlying layer, said contact space exposing a semiconductor material, said dielectric layer being situated on a semiconductor wafer; depositing a layer of titanium conformably over the bottom and sidewalls of said contact space; depositing a layer of amorphous Ti x Al y conformably over the layer of titanium over the bottom and sidewalls of the contact space; depositing a fill material comprising aluminum within said contact space; and removing all material above the top surface of the dielectric layer.
Claim 45
Dependent Claim
64 words
The method as defined in claim 41, wherein depositing a layer of amorphous Ti x Al y conformably over said layer of titanium over the bottom and sidewalls of the contact space comprises sputter depositing a layer of Ti x Al y from a Ti x Al y target conformably over said layer of titanium over the bottom and sidewalls of the contact space.
Claim 46
Dependent Claim
21 words
The method as defined in claim 41 wherein x is equal to about 1.0 and y is equal to about 3.0.
Claim 47
Dependent Claim
21 words
The method as defined in claim 42, wherein x is equal to about 1.0 and y is equal to about 3.0.
Claim 48
Dependent Claim
51 words
The method as defined in claim 41, further comprising, before depositing a fill material comprising aluminum and after depositing a layer of amorphous Ti x Al y conformably over the bottom and sidewalls of said contact space: depositing a layer of flow-promoting material, said flow-promoting material being composed of pure aluminum.
Claim 49
Dependent Claim
21 words
The method as defined in claim 45, wherein x is equal to about 1.0 and y is equal to about 3.0.
Claim 50
Independent Claim
63 words
A method of making a contact comprising: forming a contact hole in a dielectric layer terminating upon a substrate; directionally depositing a liner within the contact hole and upon the substrate; and filling the contact hole with a metallic fill material, wherein the Gibbs free energy of the potential reaction products of the liner and the metallic fill material does not favor reaction.
Claim 51
Independent Claim
63 words
A method of making a contact comprising: forming a contact hole in a dielectric layer terminating upon a substrate; directionally depositing a liner within the contact hole and upon the substrate; and filling the contact hole with a metallic fill material, wherein the Gibbs free energy of the potential reaction products of the liner and the metallic fill material does not favor reaction.
Claim 52
Independent Claim
63 words
A method of making a contact comprising: forming a contact hole in a dielectric layer terminating upon a substrate; directionally depositing a liner of amorphous material within the contact hole and upon the substrate; and filling the contact hole with a metallic fill material, wherein there is neither reaction nor reaction products between the liner of amorphous material and the metallic fill material.
Claim 53
Independent Claim
63 words
A method of making a contact comprising: forming a contact hole in a dielectric layer terminating upon a substrate; directionally depositing a liner of amorphous material within the contact hole and upon the substrate; and filling the contact hole with a metallic fill material, wherein there is neither reaction nor reaction products between the liner of amorphous material and the metallic fill material.
Claim 54
Independent Claim
64 words
A method of making a contact comprising: forming a contact hole in a dielectric layer terminating upon a substrate; directionally depositing a liner within the contact hole and upon the substrate; and filling the contact hole with a metallic fill material, wherein the liner has substantially no crystalline reactive nucleation sites for a chemically reactive interaction between the liner and the metallic fill material.
Claim 55
Independent Claim
64 words
A method of making a contact comprising: forming a contact hole in a dielectric layer terminating upon a substrate; directionally depositing a liner within the contact hole and upon the substrate; and filling the contact hole with a metallic fill material, wherein the liner has substantially no crystalline reactive nucleation sites for a chemically reactive interaction between the liner and the metallic fill material.
Claim 56
Independent Claim
99 words
A method of forming a contact structure comprising: forming a contact space in a dielectric layer terminating upon a semiconductor material; directionally depositing a liner within the contact space and upon the semiconductor material, the liner being composed of an amorphous material, wherein said amorphous material are selected from the group consisting of a metallics, intermetallics, ceramics, their compounds and combinations thereof; and filling the contact space with a metallic fill material within said contact space, wherein the Gibbs free energy of the potential reaction products of the amorphous material and the metallic fill material does not favor reaction.
Claim 57
Independent Claim
99 words
A method of forming a contact structure comprising: forming a contact space in a dielectric layer terminating upon a semiconductor material; directionally depositing a liner within the contact space and upon the semiconductor material, the liner being composed of an amorphous material, wherein said amorphous material are selected from the group consisting of a metallics, intermetallics, ceramics, their compounds and combinations thereof; and filling the contact space with a metallic fill material within said contact space, wherein the Gibbs free energy of the potential reaction products of the amorphous material and the metallic fill material does not favor reaction.
Claim 58
Independent Claim
93 words
A method of forming a contact structure comprising: forming a contact space in a dielectric layer terminating upon a semiconductor material; directionally depositing a liner within the contact space and upon the semiconductor material, the liner being composed of an amorphous material, wherein said amorphous material are selected from the group consisting of a metallics, intermetallics, ceramics, their compounds and combinations thereof; and filling the contact space with a metallic fill material within said contact space, wherein there is neither reaction nor reaction products between the amorphous material and the metallic fill material.
Claim 59
Independent Claim
93 words
A method of forming a contact structure comprising: forming a contact space in a dielectric layer terminating upon a semiconductor material; directionally depositing a liner within the contact space and upon the semiconductor material, the liner being composed of an amorphous material, wherein said amorphous material are selected from the group consisting of a metallics, intermetallics, ceramics, their compounds and combinations thereof; and filling the contact space with a metallic fill material within said contact space, wherein there is neither reaction nor reaction products between the amorphous material and the metallic fill material.
Claim 60
Independent Claim
101 words
A method of forming a contact structure comprising: forming a contact space in a dielectric layer terminating upon a semiconductor material; directionally depositing a liner within the contact space and upon the semiconductor material, the liner being composed of an amorphous material, wherein said amorphous material are selected from the group consisting of a metallics, intermetallics, ceramics, their compounds and combinations thereof; and filling the contact space with a metallic fill material within said contact space, wherein the amorphous material has substantially no crystalline reactive nucleation sites for a chemically reactive interaction between the amorphous material and the metallic fill material.
Claim 61
Independent Claim
101 words
A method of forming a contact structure comprising: forming a contact space in a dielectric layer terminating upon a semiconductor material; directionally depositing a liner within the contact space and upon the semiconductor material, the liner being composed of an amorphous material, wherein said amorphous material are selected from the group consisting of a metallics, intermetallics, ceramics, their compounds and combinations thereof; and filling the contact space with a metallic fill material within said contact space, wherein the amorphous material has substantially no crystalline reactive nucleation sites for a chemically reactive interaction between the amorphous material and the metallic fill material.
Claim 62
Independent Claim
111 words
A method of forming a contact structure comprising: forming, through a dielectric layer having a top surface, a contact space to be filled, said contact space having sidewalls and a bottom, said contact space exposing a semiconductor material; directionally depositing a layer of an amorphous material over the bottom and sidewalls of the contact space, said amorphous material being selected from the group consisting of a metallics, intermetallics, ceramics, their compounds and combinations thereof; and filling the contact space with a metallic fill material within said contact space, wherein the Gibbs free energy of the potential reaction products of the amorphous material and the metallic fill material does not favor reaction.
Claim 63
Independent Claim
111 words
A method of forming a contact structure comprising: forming, through a dielectric layer having a top surface, a contact space to be filled, said contact space having sidewalls and a bottom, said contact space exposing a semiconductor material; directionally depositing a layer of an amorphous material over the bottom and sidewalls of the contact space, said amorphous material being selected from the group consisting of a metallics, intermetallics, ceramics, their compounds and combinations thereof; and filling the contact space with a metallic fill material within said contact space, wherein the Gibbs free energy of the potential reaction products of the amorphous material and the metallic fill material does not favor reaction.
Claim 64
Independent Claim
105 words
A method of forming a contact structure comprising: forming, through a dielectric layer having a top surface, a contact space to be filled, said contact space having sidewalls and a bottom, said contact space exposing a semiconductor material; directionally depositing a layer of an amorphous material over the bottom and sidewalls of the contact space, said amorphous material being selected from the group consisting of a metallics, intermetallics, ceramics, their compounds and combinations thereof; and filling the contact space with a metallic fill material within said contact space, wherein there is neither reaction nor reaction products between the amorphous material and the metallic fill material.
Claim 65
Independent Claim
105 words
A method of forming a contact structure comprising: forming, through a dielectric layer having a top surface, a contact space to be filled, said contact space having sidewalls and a bottom, said contact space exposing a semiconductor material; directionally depositing a layer of an amorphous material over the bottom and sidewalls of the contact space, said amorphous material being selected from the group consisting of a metallics, intermetallics, ceramics, their compounds and combinations thereof; and filling the contact space with a metallic fill material within said contact space, wherein there is neither reaction nor reaction products between the amorphous material and the metallic fill material.
Claim 66
Independent Claim
107 words
A method of making a contact comprising: forming a contact hole in a dielectric layer terminating upon a substrate; directionally depositing a liner of amorphous material within the contact hole and upon the substrate; and filling the contact hole with a metallic fill material, wherein: the Gibbs free energy of the potential reaction products of the liner and the metallic fill material does not favor reaction; there is neither reaction nor reaction products between the liner of amorphous material and the metallic fill material; and the liner has substantially no crystalline reactive nucleation sites for a chemically reactive interaction between the liner and the metallic fill material.
Claim 67
Independent Claim
107 words
A method of making a contact comprising: forming a contact hole in a dielectric layer terminating upon a substrate; directionally depositing a liner of amorphous material within the contact hole and upon the substrate; and filling the contact hole with a metallic fill material, wherein: the Gibbs free energy of the potential reaction products of the liner and the metallic fill material does not favor reaction; there is neither reaction nor reaction products between the liner of amorphous material and the metallic fill material; and the liner has substantially no crystalline reactive nucleation sites for a chemically reactive interaction between the liner and the metallic fill material.
Claim 68
Independent Claim
140 words
A method of forming a contact structure comprising: forming a contact space in a dielectric layer terminating upon a semiconductor material; directionally depositing a liner within the contact space and upon the semiconductor material, the liner being composed of an amorphous material, wherein said amorphous material are selected from the group consisting of a metallics, intermetallics, ceramics, their compounds and combinations thereof; and filling the contact space with a metallic fill material within said contact space, wherein: the Gibbs free energy of the potential reaction products of the amorphous material and the metallic fill material does not favor reaction; there is neither reaction nor reaction products between the amorphous material and the metallic fill material; and the amorphous material has substantially no crystalline reactive nucleation sites for a chemically reactive interaction between the amorphous material and the metallic fill material.
Claim 69
Independent Claim
140 words
A method of forming a contact structure comprising: forming a contact space in a dielectric layer terminating upon a semiconductor material; directionally depositing a liner within the contact space and upon the semiconductor material, the liner being composed of an amorphous material, wherein said amorphous material are selected from the group consisting of a metallics, intermetallics, ceramics, their compounds and combinations thereof; and filling the contact space with a metallic fill material within said contact space, wherein: the Gibbs free energy of the potential reaction products of the amorphous material and the metallic fill material does not favor reaction; there is neither reaction nor reaction products between the amorphous material and the metallic fill material; and the amorphous material has substantially no crystalline reactive nucleation sites for a chemically reactive interaction between the amorphous material and the metallic fill material.
Claim 70
Independent Claim
152 words
A method of forming a contact structure comprising: forming, through a dielectric layer having a top surface, a contact space to be filled, said contact space having sidewalls and a bottom, said contact space exposing a semiconductor material; directionally depositing a layer of an amorphous material over the bottom and sidewalls of the contact space, said amorphous material being selected from the group consisting of a metallics, intermetallics, ceramics, their compounds and combinations thereof; and filling the contact space with a metallic fill material within said contact space, wherein: the Gibbs free energy of the potential reaction products of the amorphous material and the metallic fill material does not favor reaction; there is neither reaction nor reaction products between the amorphous material and the metallic fill material; and the amorphous material has substantially no crystalline reactive nucleation sites for a chemically reactive interaction between the amorphous material and the metallic fill material.
Claim 71
Independent Claim
152 words
A method of forming a contact structure comprising: forming, through a dielectric layer having a top surface, a contact space to be filled, said contact space having sidewalls and a bottom, said contact space exposing a semiconductor material; directionally depositing a layer of an amorphous material over the bottom and sidewalls of the contact space, said amorphous material being selected from the group consisting of a metallics, intermetallics, ceramics, their compounds and combinations thereof; and filling the contact space with a metallic fill material within said contact space, wherein: the Gibbs free energy of the potential reaction products of the amorphous material and the metallic fill material does not favor reaction; there is neither reaction nor reaction products between the amorphous material and the metallic fill material; and the amorphous material has substantially no crystalline reactive nucleation sites for a chemically reactive interaction between the amorphous material and the metallic fill material.
Claim 72
Independent Claim
280 words
A method of forming a contact structure comprising: forming, through a dielectric layer having a top surface, a contact space to be filled, said contact space having sidewalls and a bottom, said contact space exposing a semiconductor material; depositing a layer of adhesion-promoting material in the contact space, said adhesion-promoting material being capable of reacting with oxygen and carbon directionally depositing a layer of an amorphous material over the bottom and sidewalls of the contact space, wherein said amorphous material is selected from the group consisting of tantalum nitride and its compounds, tungsten nitride and its compounds, titanium aluminum nitride and its compounds, Ti x Al y , TiAl, TiAl 3 , Ti x Si y , and TiSi 2 ; depositing aluminum upon said amorphous layer; and depositing the metallic fill material within said contact space, wherein said metallic fill material comprises aluminum and alloys thereof; and pressurizing said metallic fill material in an inert gas to flow the metallic fill material into voids formed during the deposition thereof, wherein: the Gibbs free energy of the potential reaction products of the amorphous material and the metallic fill material does not favor reaction; there is neither reaction nor reaction products between the amorphous material and the metallic fill material; and the amorphous material has substantially no crystalline reactive nucleation sites for a chemically reactive interaction between the amorphous material and the metallic fill material; depositing a layer of energy absorbent material on said metallic fill material deposited in said contact space, wherein said energy absorbent material is selected from the group consisting of titanium nitride, silicon carbide, carbon; and removing all material above said top surface of said dielectric layer.
Claim 73
Independent Claim
280 words
A method of forming a contact structure comprising: forming, through a dielectric layer having a top surface, a contact space to be filled, said contact space having sidewalls and a bottom, said contact space exposing a semiconductor material; depositing a layer of adhesion-promoting material in the contact space, said adhesion-promoting material being capable of reacting with oxygen and carbon directionally depositing a layer of an amorphous material over the bottom and sidewalls of the contact space, wherein said amorphous material is selected from the group consisting of tantalum nitride and its compounds, tungsten nitride and its compounds, titanium aluminum nitride and its compounds, Ti x Al y , TiAl, TiAl 3 , Ti x Si y , and TiSi 2 ; depositing aluminum upon said amorphous layer; and depositing the metallic fill material within said contact space, wherein said metallic fill material comprises aluminum and alloys thereof; and pressurizing said metallic fill material in an inert gas to flow the metallic fill material into voids formed during the deposition thereof, wherein: the Gibbs free energy of the potential reaction products of the amorphous material and the metallic fill material does not favor reaction; there is neither reaction nor reaction products between the amorphous material and the metallic fill material; and the amorphous material has substantially no crystalline reactive nucleation sites for a chemically reactive interaction between the amorphous material and the metallic fill material; depositing a layer of energy absorbent material on said metallic fill material deposited in said contact space, wherein said energy absorbent material is selected from the group consisting of titanium nitride, silicon carbide, carbon; and removing all material above said top surface of said dielectric layer.
Claim 74
Independent Claim
43 words
A method of making a contact comprising: forming a contact hole in a dielectric layer terminating upon a substrate; directionally depositing an amorphous material within the contact hole upon the substrate; and filling the contact hole with a metal upon the amorphous material.
Claim 75
Independent Claim
43 words
A method of making a contact comprising: forming a contact hole in a dielectric layer terminating upon a substrate; directionally depositing an amorphous material within the contact hole upon the substrate; and filling the contact hole with a metal upon the amorphous material.
Claim 76
Dependent Claim
42 words
The method as defined in claim 1, wherein directionally depositing a layer of an amorphous material over the bottom and sidewalls of the contact space comprises sputter deposition from various directions to cover both the bottom and sidewalls of the contact space.
Claim 77
Independent Claim
74 words
A method of forming a contract structure comprising: forming, through a dielectric layer having a top surface, a contact space to be filled, said contact space having sidewalls and a bottom, said contact space exposing a semiconductor material; depositing a layer of an amorphous material over the bottom and sidewalls of the contact space, wherein said amorphous material comprises tantalum nitride and its compounds; and depositing a metallic fill material within said contact space.
Claim 78
Independent Claim
74 words
A method of forming a contract structure comprising: forming, through a dielectric layer having a top surface, a contact space to be filled, said contact space having sidewalls and a bottom, said contact space exposing a semiconductor material; depositing a layer of an amorphous material over the bottom and sidewalls of the contact space, wherein said amorphous material comprises tantalum nitride and its compounds; and depositing a metallic fill material within said contact space.
Claim 79
Independent Claim
74 words
A method of forming a contract structure comprising: forming, through a dielectric layer having a top surface, a contact space to be filled, said contact space having sidewalls and a bottom, said contact space exposing a semiconductor material; depositing a layer of an amorphous material over the bottom and sidewalls of the contact space, wherein said amorphous material comprises tungsten nitride and its compounds; and depositing a metallic fill material within said contact space.
Claim 80
Independent Claim
74 words
A method of forming a contract structure comprising: forming, through a dielectric layer having a top surface, a contact space to be filled, said contact space having sidewalls and a bottom, said contact space exposing a semiconductor material; depositing a layer of an amorphous material over the bottom and sidewalls of the contact space, wherein said amorphous material comprises tungsten nitride and its compounds; and depositing a metallic fill material within said contact space.
Claim 81
Independent Claim
75 words
A method of forming a contract structure comprising: forming, through a dielectric layer having a top surface, a contact space to be filled, said contact space having sidewalls and a bottom, said contact space exposing a semiconductor material; depositing a layer of an amorphous material over the bottom and sidewalls of the contact space, wherein said amorphous material comprises titanium aluminum nitride and its compounds; and depositing a metallic fill material within said contact space.
Claim 82
Independent Claim
75 words
A method of forming a contract structure comprising: forming, through a dielectric layer having a top surface, a contact space to be filled, said contact space having sidewalls and a bottom, said contact space exposing a semiconductor material; depositing a layer of an amorphous material over the bottom and sidewalls of the contact space, wherein said amorphous material comprises titanium aluminum nitride and its compounds; and depositing a metallic fill material within said contact space.
Claim 83
Independent Claim
74 words
A method of forming a contract structure comprising: forming, through a dielectric layer having a top surface, a contact space to be filled, said contact space having sidewalls and a bottom, said contact space exposing a semiconductor material; depositing a layer of an amorphous material over the bottom and sidewalls of the contact space, wherein said amorphous material comprises Ti x Al y ; and depositing a metallic fill material within said contact space.
Claim 84
Independent Claim
74 words
A method of forming a contract structure comprising: forming, through a dielectric layer having a top surface, a contact space to be filled, said contact space having sidewalls and a bottom, said contact space exposing a semiconductor material; depositing a layer of an amorphous material over the bottom and sidewalls of the contact space, wherein said amorphous material comprises Ti x Al y ; and depositing a metallic fill material within said contact space.
Claim 85
Dependent Claim
14 words
The method as defined in claim 64, wherein x and y both equal one.
Claim 86
Dependent Claim
15 words
The method as defined in claim 64, wherein x equals on and y equals 3.
Claim 87
Independent Claim
92 words
A method of forming a contract structure comprising: forming, through a dielectric layer having a top surface, a contact space to be filled, said contact space having sidewalls and a bottom, said contact space exposing a semiconductor material; depositing a layer of an amorphous material over the bottom and sidewalls of the contact space, said amorphous material being selected from the group consisting of a metallics, intermetallics, ceramics, their compounds and combinations thereof; and depositing a metallic fill material within said contact space, wherein said metallic fill material comprises an aluminum-germanium alloy.
Claim 88
Independent Claim
92 words
A method of forming a contract structure comprising: forming, through a dielectric layer having a top surface, a contact space to be filled, said contact space having sidewalls and a bottom, said contact space exposing a semiconductor material; depositing a layer of an amorphous material over the bottom and sidewalls of the contact space, said amorphous material being selected from the group consisting of a metallics, intermetallics, ceramics, their compounds and combinations thereof; and depositing a metallic fill material within said contact space, wherein said metallic fill material comprises an aluminum-germanium alloy.
Claim 89
Independent Claim
110 words
A method of forming a contract structure comprising: forming, through a dielectric layer having a top surface, a contact space to be filled, said contact space having sidewalls and a bottom, said contact space exposing a semiconductor material; depositing a layer of an amorphous material over the bottom and sidewalls of the contact space, said amorphous material being selected from the group consisting of a metallics, intermetallics, ceramics, their compounds and combinations thereof; depositing a first layer of a metallic fill material at a temperature less than about 200° C.; and depositing said metallic fill material to fill said contact space at a temperature not less than about 200° C.
Claim 90
Independent Claim
110 words
A method of forming a contract structure comprising: forming, through a dielectric layer having a top surface, a contact space to be filled, said contact space having sidewalls and a bottom, said contact space exposing a semiconductor material; depositing a layer of an amorphous material over the bottom and sidewalls of the contact space, said amorphous material being selected from the group consisting of a metallics, intermetallics, ceramics, their compounds and combinations thereof; depositing a first layer of a metallic fill material at a temperature less than about 200° C.; and depositing said metallic fill material to fill said contact space at a temperature not less than about 200° C.
Claim 91
Dependent Claim
38 words
The method as defined in claim 68, wherein said step of depositing a first layer comprises depositing said first layer of said metallic fill material at a temperature between about 20° C. to less than about 200° C.
Claim 92
Independent Claim
106 words
A method of forming a contract structure comprising: forming, through a dielectric layer having a top surface, a contact space to be filled, said contact space having sidewalls and a bottom, said contact space exposing a semiconductor material; depositing a layer of an amorphous material over the bottom and sidewalls of the contact space, said amorphous material being selected from the group consisting of a metallics, intermetallics, ceramics, their compounds and combinations thereof; depositing a metallic fill material in said contact space; and pressurizing said fill material in an inert gas whereby said metallic fill material flows to fill any voids formed during the deposition thereof.
Claim 93
Independent Claim
106 words
A method of forming a contract structure comprising: forming, through a dielectric layer having a top surface, a contact space to be filled, said contact space having sidewalls and a bottom, said contact space exposing a semiconductor material; depositing a layer of an amorphous material over the bottom and sidewalls of the contact space, said amorphous material being selected from the group consisting of a metallics, intermetallics, ceramics, their compounds and combinations thereof; depositing a metallic fill material in said contact space; and pressurizing said fill material in an inert gas whereby said metallic fill material flows to fill any voids formed during the deposition thereof.
Claim 94
Independent Claim
122 words
A method of forming a contract structure comprising: forming, through a dielectric layer having a top surface, a contact space to be filled, said contact space having sidewalls and a bottom, said contact space exposing a semiconductor material; depositing a layer of an amorphous material over the bottom and sidewalls of the contact space, said amorphous material being selected from the group consisting of a metallics, intermetallics, ceramics, their compounds and combinations thereof; depositing Al or an Al alloy fill material in said contact space; and annealing said Al or Al alloy fill material at a temperature in the range of about 350° C. to about 650° C. for a time in the range of about 5 second to about 360 seconds.
Claim 95
Independent Claim
122 words
A method of forming a contract structure comprising: forming, through a dielectric layer having a top surface, a contact space to be filled, said contact space having sidewalls and a bottom, said contact space exposing a semiconductor material; depositing a layer of an amorphous material over the bottom and sidewalls of the contact space, said amorphous material being selected from the group consisting of a metallics, intermetallics, ceramics, their compounds and combinations thereof; depositing Al or an Al alloy fill material in said contact space; and annealing said Al or Al alloy fill material at a temperature in the range of about 350° C. to about 650° C. for a time in the range of about 5 second to about 360 seconds.
Claim 96
Independent Claim
109 words
A method of forming a contract structure comprising: forming, through a dielectric layer having a top surface, a contact space to be filled, said contact space having sidewalls and a bottom, said contact space exposing a semiconductor material; depositing a layer of an amorphous material over the bottom and sidewalls of the contact space, said amorphous material being selected from the group consisting of a metallics, intermetallics, ceramics, their compounds and combinations thereof; depositing a metallic fill material in said contact space; and annealing said metallic fill material at a temperature range and duration sufficient to allow said metallic fill material to become viscous and flow to fill voids.
Claim 97
Independent Claim
109 words
A method of forming a contract structure comprising: forming, through a dielectric layer having a top surface, a contact space to be filled, said contact space having sidewalls and a bottom, said contact space exposing a semiconductor material; depositing a layer of an amorphous material over the bottom and sidewalls of the contact space, said amorphous material being selected from the group consisting of a metallics, intermetallics, ceramics, their compounds and combinations thereof; depositing a metallic fill material in said contact space; and annealing said metallic fill material at a temperature range and duration sufficient to allow said metallic fill material to become viscous and flow to fill voids.
Claim 98
Dependent Claim
42 words
The method as defined in claim 72, wherein depositing a metallic fill material within said contact space further comprises before annealing said metallic fill material: depositing a layer of energy absorbent material on said metallic fill material deposited in said contact space.
Claim 99
Dependent Claim
15 words
The method as defined in claim 72, wherein said energy absorbent material comprises titanium nitride.
Claim 100
Dependent Claim
15 words
The method as defined in claim 72, wherein said energy absorbent material comprises silicon carbide.
Claim 101
Dependent Claim
14 words
The method as defined in claim 73, wherein said energy absorbent material comprises carbon.
Claim 102
Independent Claim
114 words
A method of forming a contract structure comprising: forming, through a dielectric layer having a top surface, a contact space to be filled, said contact space having sidewalls and a bottom, said contact space exposing a semiconductor material; depositing a layer of adhesion-promoting material, said adhesion-promoting material being capable of reacting with oxygen and carbon, whereby adhesion to said sides and said bottom of said contact space is promoted; depositing a layer of an amorphous material over the bottom and sidewalls of the contact space, said amorphous material being selected from the group consisting of a metallics, intermetallics, ceramics, their compounds and combinations thereof; and depositing a metallic fill material within said contact space.
Claim 103
Independent Claim
114 words
A method of forming a contract structure comprising: forming, through a dielectric layer having a top surface, a contact space to be filled, said contact space having sidewalls and a bottom, said contact space exposing a semiconductor material; depositing a layer of adhesion-promoting material, said adhesion-promoting material being capable of reacting with oxygen and carbon, whereby adhesion to said sides and said bottom of said contact space is promoted; depositing a layer of an amorphous material over the bottom and sidewalls of the contact space, said amorphous material being selected from the group consisting of a metallics, intermetallics, ceramics, their compounds and combinations thereof; and depositing a metallic fill material within said contact space.
Claim 104
Dependent Claim
25 words
The method as defined in claim 77, further comprising after depositing a layer of an amorphous material: depositing a flow-assisting layer upon said amorphous layer.
Claim 105
Dependent Claim
16 words
The method as defined in claim 77, wherein said adhesion promoting material comprises a refractory metal.
Claim 106
Dependent Claim
13 words
The method as defined in claim 79, wherein said refractory metal comprises titanium.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2002-09-20 | 2003-03-22 | 2003-09-21 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2006-09-20 | 2007-03-22 | 2007-09-21 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2010-09-20 | 2011-03-22 | 2011-09-21 | $7700.00 | Window Closed / Lapsed |