Patent US5952698A successfully refreshed from Google Patents.
US5952698A
Expired / Lapsed
US
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Layout pattern for improved MOS device matching
Assignee: Taiwan Semiconductor Manufacturing Co TSMC Ltd
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Filing: 1995-09-07
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Granted: 1999-09-14
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Expires: 2015-09-07
Abstract
Abstract This invention provides a circuit layout pattern and layout method for matching pairs of metal oxide semiconductor field effect transistors used in matched pairs in precision analog circuits. The layout uses dummy Metal oxide field effect transistors, or MOSFETs, to keep the environment the same around each of the MOSFETs in a matched pair. The MOSFETs in a matched pair are in a single row with each MOSFET in the matched pair having dummy MOSFETs adjacent to it on either side. The dummy MOSFETs can be part of the matched pair, can be used in other parts of the circuit, or may not be used. The use of dummy MOSFETs keeps the environment around each MOSFET in the matched pair the same and this improves the matching characteristics.
Inventors
- 👤 Shyh-Chyi Wong
- 👤 Pin-Nan Tseng
- 👤 Jyh-Kang Ting
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 10:21
CPC Classifications
H; H10; H10D; H10D89/00; H10D89/10; H10D84/00; H10D84/80; H10D84/82; H10D84/83
Claims Analysis
Total Claims: 24
Claim 1
Independent Claim
327 words
A circuit layout, comprising: four or more metal oxide semiconductor field effect transistors each said transistor having a rectangular channel diffusion area bounded by a top edge, a bottom edge, an inside edge, and an outside edge wherein each said channel diffusion area has about the same length and about the same width and said transistors are arranged in a row so that said inside edge of each channel diffusion area is parallel to said inside edges of the remaining said channel diffusion areas, said outside edge of each channel diffusion area is parallel to said outside edges of the remaining said channel diffusion areas, said inside edge of each said channel diffusion area is parallel to said outside edge of each said channel diffusion area, said top edge of each said channel diffusion area is parallel to said bottom edge of each said channel diffusion area, said top edges of each said channel diffusion area lie on a single line, and said bottom edges of each said channel diffusion area lie on a single line; a number of gate electrodes equal to the number of said transistors wherein one of each said gate electrodes crosses each said channel diffusion area so that the edges of said gate electrodes are parallel to said top edge of said channel diffusion area; a source contact for each of said transistors; a drain contact for each of said transistors; a number of matched pairs of said transistors, wherein said inside edge of said channel diffusion area of each transistor in each said matched pair of transistors is adjacent to said channel diffusion area of another of said number of metal oxide semiconductor field effect transistors and said outside edge of said channel diffusion area of each transistor in each said matched pair of transistors is adjacent to said channel diffusion area of another of said number of metal oxide semiconductor field effect transistors; and electrode connections to interconnect said transistors.
Claim 2
Dependent Claim
327 words
A circuit layout, comprising: four or more metal oxide semiconductor field effect transistors each said transistor having a rectangular channel diffusion area bounded by a top edge, a bottom edge, an inside edge, and an outside edge wherein each said channel diffusion area has about the same length and about the same width and said transistors are arranged in a row so that said inside edge of each channel diffusion area is parallel to said inside edges of the remaining said channel diffusion areas, said outside edge of each channel diffusion area is parallel to said outside edges of the remaining said channel diffusion areas, said inside edge of each said channel diffusion area is parallel to said outside edge of each said channel diffusion area, said top edge of each said channel diffusion area is parallel to said bottom edge of each said channel diffusion area, said top edges of each said channel diffusion area lie on a single line, and said bottom edges of each said channel diffusion area lie on a single line; a number of gate electrodes equal to the number of said transistors wherein one of each said gate electrodes crosses each said channel diffusion area so that the edges of said gate electrodes are parallel to said top edge of said channel diffusion area; a source contact for each of said transistors; a drain contact for each of said transistors; a number of matched pairs of said transistors, wherein said inside edge of said channel diffusion area of each transistor in each said matched pair of transistors is adjacent to said channel diffusion area of another of said number of metal oxide semiconductor field effect transistors and said outside edge of said channel diffusion area of each transistor in each said matched pair of transistors is adjacent to said channel diffusion area of another of said number of metal oxide semiconductor field effect transistors; and electrode connections to interconnect said transistors.
Claim 3
Dependent Claim
30 words
The circuit layout of claim 1 wherein each said transistors forming one said matched pair of transistors is adjacent to the other said transistor forming said matched pair of transistors.
Claim 4
Dependent Claim
17 words
The circuit layout of claim 1 wherein there are six said metal oxide semiconductor field effect transistors.
Claim 5
Dependent Claim
14 words
The circuit layout of claim 1 wherein said number of matched pairs is two.
Claim 6
Dependent Claim
21 words
The circuit layout of claim 1 wherein each said rectangular channel diffusion area has a channel width and a channel length.
Claim 7
Dependent Claim
14 words
The circuit layout of claim 5 wherein said channel width is about 20 micrometers.
Claim 8
Dependent Claim
14 words
The circuit layout of claim 5 wherein said channel length is about 0.8 micrometers.
Claim 9
Dependent Claim
36 words
The circuit layout of claim 1 wherein the length of each said top edge and the length of each said bottom edge of each said rectangular channel diffusion area is between about 1 and 100 micrometers.
Claim 10
Dependent Claim
36 words
The circuit layout of claim 1 wherein the length of each said inside edge and the length of each said outside edge of each said rectangular channel diffusion area is between about 0.2 and 5 micrometers.
Claim 11
Dependent Claim
31 words
The circuit layout of claim 1 wherein the distance between said rectangular channel diffusion areas of adjacent said metal oxide semiconductor field effect transistors is between about 0.3 and 4 micrometers.
Claim 12
Independent Claim
338 words
A method of matching transistors comprising the steps of: providing four or more metal oxide semiconductor field effect transistors each said transistor having a rectangular channel diffusion area bounded by a top edge, a bottom edge, an inside edge, and an outside edge wherein each said channel diffusion area has about the same width and about the same length and said transistors are arranged in a row so that said inside edge of each said channel diffusion area is parallel to said inside edges of the remaining said channel diffusion areas, said outside edge of each channel diffusion area is parallel to said outside edges of the remaining said channel diffusion areas, said inside edge of each said channel diffusion area is parallel to said outside edge of each said channel diffusion area, said top edge of each said channel diffusion area is parallel to said bottom edge of each said channel diffusion area, said top edges of each said channel diffusion area lie on a single line, and said bottom edges of each said channel diffusion area lie on a single line; providing a number of gate electrodes equal to the number of said transistors wherein one of each said gate electrodes crosses each said channel diffusion area so that the edges of said gate electrodes are parallel to said top edge of said channel diffusion area; providing a source contact for each of said transistors; providing a drain contact for each of said transistors; selecting one or more matched pairs of said transistors, wherein said inside edge of said channel diffusion area of each transistor in each said matched pair of transistors is adjacent to said channel diffusion area of another of said number of metal oxide semiconductor field effect transistors and said outside edge of said channel diffusion area of each transistor in each said matched pair of transistors is adjacent to said channel diffusion area of another of said number of metal oxide semiconductor field effect transistors; and interconnecting said matched pairs of transistors.
Claim 13
Independent Claim
338 words
A method of matching transistors comprising the steps of: providing four or more metal oxide semiconductor field effect transistors each said transistor having a rectangular channel diffusion area bounded by a top edge, a bottom edge, an inside edge, and an outside edge wherein each said channel diffusion area has about the same width and about the same length and said transistors are arranged in a row so that said inside edge of each said channel diffusion area is parallel to said inside edges of the remaining said channel diffusion areas, said outside edge of each channel diffusion area is parallel to said outside edges of the remaining said channel diffusion areas, said inside edge of each said channel diffusion area is parallel to said outside edge of each said channel diffusion area, said top edge of each said channel diffusion area is parallel to said bottom edge of each said channel diffusion area, said top edges of each said channel diffusion area lie on a single line, and said bottom edges of each said channel diffusion area lie on a single line; providing a number of gate electrodes equal to the number of said transistors wherein one of each said gate electrodes crosses each said channel diffusion area so that the edges of said gate electrodes are parallel to said top edge of said channel diffusion area; providing a source contact for each of said transistors; providing a drain contact for each of said transistors; selecting one or more matched pairs of said transistors, wherein said inside edge of said channel diffusion area of each transistor in each said matched pair of transistors is adjacent to said channel diffusion area of another of said number of metal oxide semiconductor field effect transistors and said outside edge of said channel diffusion area of each transistor in each said matched pair of transistors is adjacent to said channel diffusion area of another of said number of metal oxide semiconductor field effect transistors; and interconnecting said matched pairs of transistors.
Claim 14
Dependent Claim
30 words
The method of claim 11 wherein each of said transistors forming one said matched pair of transistors is adjacent to the other said transistor forming said matched pair of transistors.
Claim 15
Dependent Claim
16 words
The method of claim 11 wherein there are six said metal oxide semiconductor field effect transistors.
Claim 16
Dependent Claim
13 words
The method of claim 11 wherein said number of matched pairs is two.
Claim 17
Dependent Claim
13 words
The method of claim 11 wherein said number of matched pairs is one.
Claim 18
Dependent Claim
16 words
The method of claim 11 wherein there are four said metal oxide semiconductor field effect transistors.
Claim 19
Dependent Claim
20 words
The method of claim 11 wherein each said rectangular channel diffusion area has a channel width and a channel length.
Claim 20
Dependent Claim
13 words
The method of claim 17 wherein said channel width is about 20 micrometers.
Claim 21
Dependent Claim
13 words
The method of claim 17 wherein said channel length is about 0.8 micrometers.
Claim 22
Dependent Claim
35 words
The method of claim 11 wherein the length of each said top edge and the length of each said bottom edge of each said rectangular channel diffusion area is between about 1 and 100 micrometers.
Claim 23
Dependent Claim
35 words
The method of claim 11 wherein the length of each said inside edge and the length of each said outside edge of each said rectangular channel diffusion area is between about 0.2 and 5 micrometers.
Claim 24
Dependent Claim
30 words
The method of claim 11 wherein the distance between said rectangular channel diffusion areas of adjacent said metal oxide semiconductor field effect transistors is between about 0.3 and 4 micrometers.
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