Patent US5951887A successfully refreshed from Google Patents.
US5951887A
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Plasma processing apparatus and plasma processing method
Assignee: Tokyo Electron Ltd
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Filing: 1997-03-27
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Granted: 1999-09-14
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Expires: 2017-03-27
Abstract
Abstract A plasma processing apparatus and plasma processing method are provided to be used for etching, ashing, CVD, etc. in the manufacturing, etc. of large-scale integrated circuits (LSIs) and liquid crystal display panels (LCDs). The plasma processing apparatus generates plasma by using a microwave introduced through a microwave window, while controlling the ions in the plasma by varying the RF voltage applied to the sample stage. The apparatus is characterized to include a counter electrode (grounded electrode) which is located at the rim section of the microwave window against the sample stage. The plasma processing method implements a plasma process for a sample with the plasma processing apparatus. The method and apparatus are capable of alleviating the sticking of particles to the sample and metallic contamination, and also capable of improving the yield of semiconductor devices, etc.
Inventors
- 👤 Hiroshi Mabuchi
- 👤 Toshihiro Hayami
- 👤 Hideo Ida
- 👤 Tomomi Murakami
- 👤 Naohiko Takeda
- 👤 Junya Tsuyuguchi
- 👤 Katsuo Katayama
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 09:32
CPC Classifications
H; H05; H05H; H05H1/00; H05H1/24; H05H1/46; B; B05; B05D; B05D1/00; B05D1/62; C; C23; C23C; C23C16/00; C23C16/44; C23C16/4401; C23C16/50; C23C16/511; H01; H01J; H01J37/00; H01J37/32; H01J37/32009; H01J37/32192; H01J37/32211; H01J37/32238; H01J2237/00; H01J2237/02; H01J2237/022
Claims Analysis
Total Claims: 16
Claim 1
Independent Claim
94 words
A plasma processing apparatus comprising: means for supplying a microwave; a dielectric plate for propagating said microwave from said means for supplying a microwave; a reaction chamber having a microwave window which confronts said dielectric plate and a sample stage which confronts said microwave window; means for applying an RF voltage to said sample stage; and a counter electrode which is grounded electrically, wherein said counter electrode is located underneath a rim section of said microwave window inside said reaction chamber so that said counter electrode has no portion located above said sample stage.
Claim 2
Dependent Claim
94 words
A plasma processing apparatus comprising: means for supplying a microwave; a dielectric plate for propagating said microwave from said means for supplying a microwave; a reaction chamber having a microwave window which confronts said dielectric plate and a sample stage which confronts said microwave window; means for applying an RF voltage to said sample stage; and a counter electrode which is grounded electrically, wherein said counter electrode is located underneath a rim section of said microwave window inside said reaction chamber so that said counter electrode has no portion located above said sample stage.
Claim 3
Dependent Claim
21 words
The plasma processing apparatus according to claim 1, wherein said counter electrode has no portion located directly above said sample stage.
Claim 4
Dependent Claim
27 words
The plasma processing apparatus according to claim 1, wherein said microwave window is shaped such that an edge section of said counter electrode is protected from sputtering.
Claim 5
Dependent Claim
40 words
The plasma processing apparatus according to claim 1, further comprising a metallic microwave regulation plate having an opening for introducing said microwave into said reaction chamber, said microwave regulation plate being located on said microwave window outside said reaction chamber.
Claim 6
Dependent Claim
202 words
A plasma processing method using a plasma processing apparatus which comprising means for supplying a microwave; a dielectric plate for propagating said microwave from said means for supplying a microwave; a reaction chamber having a microwave window which confronts said dielectric plate and a sample stage which confronts said microwave window; means for applying an RF voltage to said sample stage; and a counter electrode which is grounded electrically, wherein said counter electrode is located underneath a rim section of said microwave window inside said reaction chamber so that said counter electrode has no portion located above said sample stage, comprising the steps of: evacuating said reaction chamber in which a sample is placed on said sample stage; supplying a processing gas into said reaction chamber; supplying a microwave into said reaction chamber to generate a plasma through a microwave window by propagating a microwave in a dielectric plate confronted to said microwave window; and applying an RF voltage between said sample stage and said counter electrode to generate a bias voltage on the surface of said sample; whereby said sample is processed by a plasma and is etched based on a stabilized bias voltage produced on a surface of said sample.
Claim 7
Dependent Claim
202 words
A plasma processing method using a plasma processing apparatus which comprising means for supplying a microwave; a dielectric plate for propagating said microwave from said means for supplying a microwave; a reaction chamber having a microwave window which confronts said dielectric plate and a sample stage which confronts said microwave window; means for applying an RF voltage to said sample stage; and a counter electrode which is grounded electrically, wherein said counter electrode is located underneath a rim section of said microwave window inside said reaction chamber so that said counter electrode has no portion located above said sample stage, comprising the steps of: evacuating said reaction chamber in which a sample is placed on said sample stage; supplying a processing gas into said reaction chamber; supplying a microwave into said reaction chamber to generate a plasma through a microwave window by propagating a microwave in a dielectric plate confronted to said microwave window; and applying an RF voltage between said sample stage and said counter electrode to generate a bias voltage on the surface of said sample; whereby said sample is processed by a plasma and is etched based on a stabilized bias voltage produced on a surface of said sample.
Claim 8
Dependent Claim
21 words
A plasma processing method according to claim 5, wherein said counter electrode has no portion located directly above said sample stage.
Claim 9
Dependent Claim
114 words
A plasma processing apparatus comprising: a reaction chamber having a microwave window through which a microwave is introduced and a sample stage on which a sample is placed; means for supplying a microwave; means for supplying a microwave supplied by said means for supplying a microwave into said reaction chamber, with propagating a microwave in a direction parallel to the surface of said microwave window; means for applying an RF voltage to said sample stage; and a counter electrode which is grounded electrically, wherein said counter electrode is located underneath a rim section of said microwave window inside said reaction chamber so that said counter electrode has no portion located above said sample stage.
Claim 10
Dependent Claim
114 words
A plasma processing apparatus comprising: a reaction chamber having a microwave window through which a microwave is introduced and a sample stage on which a sample is placed; means for supplying a microwave; means for supplying a microwave supplied by said means for supplying a microwave into said reaction chamber, with propagating a microwave in a direction parallel to the surface of said microwave window; means for applying an RF voltage to said sample stage; and a counter electrode which is grounded electrically, wherein said counter electrode is located underneath a rim section of said microwave window inside said reaction chamber so that said counter electrode has no portion located above said sample stage.
Claim 11
Dependent Claim
21 words
The plasma processing apparatus according to claim 7, wherein said counter electrode has no portion located directly above said sample stage.
Claim 12
Dependent Claim
25 words
The plasma processing apparatus according to claim 7, wherein said microwave window is shaped such that an edge section of said counter electrode is protected.
Claim 13
Dependent Claim
36 words
The plasma processing apparatus according to claim 7, further comprising a metallic microwave regulation plate having an opening for introducing said microwave, said microwave regulation plate being located on said microwave window outside said reaction chamber.
Claim 14
Dependent Claim
226 words
A plasma processing method using a plasma processing apparatus which comprises a reaction chamber having a microwave window through which a microwave is introduced and a sample stage on which a sample is placed; means for supplying a microwave; means for supplying a microwave supplied by said means for supplying a microwave into said reaction chamber, with propagating a microwave in a direction parallel to the surface of said microwave window; means for applying an RF voltage to said sample stage; and a counter electrode which is grounded electrically, wherein said counter electrode is located underneath a rim reaction of said microwave window inside said reaction chamber so that said counter electrode has no portion located above said sample stage, said method comprising the steps of: evacuating said reaction chamber in which a sample is placed on said sample stage; supplying a processing gas into said reaction chamber; supplying a microwave into said reaction chamber through said microwave window to generate a plasma by propagating a microwave in a direction parallel to the surface of said microwave window; and applying an RF voltage between said sample stage and said counter electrode to generate a bias voltage on the surface of said sample; whereby said sample is processed by a plasma and is etched based on a stabilized bias voltage produced on a surface of said sample.
Claim 15
Dependent Claim
226 words
A plasma processing method using a plasma processing apparatus which comprises a reaction chamber having a microwave window through which a microwave is introduced and a sample stage on which a sample is placed; means for supplying a microwave; means for supplying a microwave supplied by said means for supplying a microwave into said reaction chamber, with propagating a microwave in a direction parallel to the surface of said microwave window; means for applying an RF voltage to said sample stage; and a counter electrode which is grounded electrically, wherein said counter electrode is located underneath a rim reaction of said microwave window inside said reaction chamber so that said counter electrode has no portion located above said sample stage, said method comprising the steps of: evacuating said reaction chamber in which a sample is placed on said sample stage; supplying a processing gas into said reaction chamber; supplying a microwave into said reaction chamber through said microwave window to generate a plasma by propagating a microwave in a direction parallel to the surface of said microwave window; and applying an RF voltage between said sample stage and said counter electrode to generate a bias voltage on the surface of said sample; whereby said sample is processed by a plasma and is etched based on a stabilized bias voltage produced on a surface of said sample.
Claim 16
Dependent Claim
21 words
A plasma processing method according to claim 11, wherein said counter electrode has no portion located directly above said sample stage.
References Cited (Backward Citations)
US4358744A
Cited
JPS61241930A
Cited
US5038712A
Cited
JPH0267632A
Cited
JPH04117437A
Cited
US5290993A
Cited
US5279669A
Cited
JPH06104098A
Cited
JPH06112138A
Cited
JPH0786246A
Cited
JPH07335567A
Cited
US5545258A
Cited
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| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
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| 3.5 Years (Year 4) | 2002-09-13 | 2003-03-15 | 2003-09-14 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2006-09-13 | 2007-03-15 | 2007-09-14 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2010-09-13 | 2011-03-15 | 2011-09-14 | $7700.00 | Window Closed / Lapsed |