US5545258A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Microwave plasma processing system
Assignee: Nippon Steel Corp
•
Filing: 1995-06-13
•
Granted: 1996-08-13
•
Expires: 2015-06-13
Abstract
Abstract A microwave plasma processing system, wherein a conductor disposed for controlling the anisotropy and the acceleration energy of ions in a plasma has inside a flow path for reactant gasses and a plurality of holes through which the gasses are to be blown toward a sample holder. A microwave plasma processing system, wherein the ratio of the total area of microwave transmission holes to the area of a conductor is set to be in a range of 0.25 to 0.65. A microwave plasma processing system, wherein each microwave transmission hole formed in a conductor has a dimension in the microwave traveling direction greater than that in a direction perpendicular to the traveling direction.
Inventors
- 👤 Katsuo Katayama
- 👤 Kyoichi Komachi
- 👤 Hiroshi Mabuchi
- 👤 Takeshi Akimoto
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 03:13
CPC Classifications
H; H01; H01J; H01J37/00; H01J37/32; H01J37/32431; H01J37/3244; H10; H10P; H10P50/00; H10P50/20; H10P50/24; H10P50/242; H01J37/32009; H01J37/32192; H01J37/32266
Claims Analysis
Total Claims: 11
Claim 1
Independent Claim
143 words
A microwave plasma processing system comprising: a microwave oscillator; a reactor to which a microwave oscillated by said microwave oscillator and a reactant gas are introduced; a waveguide for guiding the microwave to said reactor; a dielectric passage formed on one face of said reactor and connected to said waveguide; a microwave introduction window disposed in a manner that said reactor is partitioned into said dielectric passage and a reaction chamber; a sample holder disposed in said reaction chamber; means for applying an electric field to said sample holder; gas supplying means for supplying the reactant gas to said reaction chamber; and a conductor disposed between said microwave introduction window and said sample holder, the conductor having microwave transmission holes, a flow path communicated with said gas supplying means, and holes through which the reactant gas is to be blown toward a sample.
Claim 2
Dependent Claim
143 words
A microwave plasma processing system comprising: a microwave oscillator; a reactor to which a microwave oscillated by said microwave oscillator and a reactant gas are introduced; a waveguide for guiding the microwave to said reactor; a dielectric passage formed on one face of said reactor and connected to said waveguide; a microwave introduction window disposed in a manner that said reactor is partitioned into said dielectric passage and a reaction chamber; a sample holder disposed in said reaction chamber; means for applying an electric field to said sample holder; gas supplying means for supplying the reactant gas to said reaction chamber; and a conductor disposed between said microwave introduction window and said sample holder, the conductor having microwave transmission holes, a flow path communicated with said gas supplying means, and holes through which the reactant gas is to be blown toward a sample.
Claim 3
Dependent Claim
21 words
A microwave plasma processing system according to claim 1, wherein said conductor is disposed in contact with said microwave introduction window.
Claim 4
Dependent Claim
145 words
A microwave plasma processing system comprising: a microwave oscillator; a reactor to which a microwave oscillated by said microwave oscillator and a reactant gas are introduced; a waveguide for guiding the microwave said reactor; a dielectric passage formed on one face of said reactor and connected to said waveguide; a microwave introduction window which is disposed in a manner that said reactor is partitioned into said dielectric passage and a reaction chamber; a sample holder disposed in said reaction chamber; means for applying an electric field to said sample holder; means for supplying the reactant gas to said reaction chamber; and a conductor disposed between said microwave introduction window and said sample holder, the conductor having microwave transmission holes, wherein a ratio of a total area of said microwave transmission holes to an area of said conductor is in the range of 0.25 to 0.65.
Claim 5
Dependent Claim
145 words
A microwave plasma processing system comprising: a microwave oscillator; a reactor to which a microwave oscillated by said microwave oscillator and a reactant gas are introduced; a waveguide for guiding the microwave said reactor; a dielectric passage formed on one face of said reactor and connected to said waveguide; a microwave introduction window which is disposed in a manner that said reactor is partitioned into said dielectric passage and a reaction chamber; a sample holder disposed in said reaction chamber; means for applying an electric field to said sample holder; means for supplying the reactant gas to said reaction chamber; and a conductor disposed between said microwave introduction window and said sample holder, the conductor having microwave transmission holes, wherein a ratio of a total area of said microwave transmission holes to an area of said conductor is in the range of 0.25 to 0.65.
Claim 6
Dependent Claim
21 words
A microwave plasma processing system according to claim 3, wherein said conductor is disposed in contact with said microwave introduction window.
Claim 7
Dependent Claim
145 words
A microwave plasma processing system comprising: a microwave oscillator; a reactor to which a microwave oscillated by said microwave oscillator and a reactant gas are introduced; a waveguide for guiding the microwave to said reactor; a dielectric passage formed on one face of said reactor, and connected to said waveguide; a microwave introduction window which partitions said reactor into said dielectric passage and a reaction chamber; a sample holder disposed in said reaction chamber; means for applying an electric field to said sample holder; means for supplying the reactant gas to said reaction chamber; and a conductor disposed between said microwave introduction window and said sample holder, the conductor having microwave transmission holes, wherein a dimension of each of said microwave transmission holes in a microwave traveling direction on said dielectric passage is greater than that in a direction perpendicular to said microwave traveling direction.
Claim 8
Dependent Claim
145 words
A microwave plasma processing system comprising: a microwave oscillator; a reactor to which a microwave oscillated by said microwave oscillator and a reactant gas are introduced; a waveguide for guiding the microwave to said reactor; a dielectric passage formed on one face of said reactor, and connected to said waveguide; a microwave introduction window which partitions said reactor into said dielectric passage and a reaction chamber; a sample holder disposed in said reaction chamber; means for applying an electric field to said sample holder; means for supplying the reactant gas to said reaction chamber; and a conductor disposed between said microwave introduction window and said sample holder, the conductor having microwave transmission holes, wherein a dimension of each of said microwave transmission holes in a microwave traveling direction on said dielectric passage is greater than that in a direction perpendicular to said microwave traveling direction.
Claim 9
Dependent Claim
20 words
A microwave plasma processing system according to claim 5, wherein each of said microwave transmission holes has a rectangular shape.
Claim 10
Dependent Claim
20 words
A microwave plasma processing system according to claim 5, wherein each of said microwave transmission holes has an elliptic shape.
Claim 11
Dependent Claim
21 words
A microwave plasma processing system according to claim 5, wherein said conductor is disposed in contact with said microwave introduction window.
References Cited (Backward Citations)
EP0183561A2
Cited
US5364519A
Cited
US5017404A
Cited
US5134965A
Cited
JPH03191074A
Cited
US5342472A
Cited
EP0591975A1
Cited
US5415719A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1999-08-13 | 2000-02-12 | 2000-08-13 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2003-08-13 | 2004-02-12 | 2004-08-13 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2007-08-13 | 2008-02-12 | 2008-08-13 | $7700.00 | Window Closed / Lapsed |