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Methods and apparatus for pre-stabilized plasma generation for microwave clean applications

Assignee: Applied Materials Inc
•
Filing: 1996-11-13
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Granted: 1999-08-17
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Expires: 2016-11-13
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Abstract

Abstract The present invention provides systems, methods and apparatus for high temperature (at least about 500-800° C.) processing of semiconductor wafers. The systems, methods and apparatus of the present invention allow multiple process steps to be performed in situ in the same chamber to reduce total processing time and to ensure high quality processing for high aspect ratio devices. Performing multiple process steps in the same chamber also increases the control of the process parameters and reduces device damage. In particular, the present invention can provide high temperature deposition, heating and efficient cleaning for forming dielectric films having thickness uniformity, good gap fill capability, high density, low moisture, and other desired characteristics.

Inventors

  • 👤 Gary Fong
  • 👤 Fong Chang
  • 👤 Long Nguyen

Bibliographic Details

Application Number —
Jurisdiction US
Data Source google_patents
Last Synchronized 2026-11-08 10:25
CPC Classifications
H; H10; H10P; H10P72/00; H10P72/04; H10P72/0402; C; C23; C23C; C23C16/00; C23C16/44; C23C16/4401; C23C16/4405; H01; H01J; H01J37/00; H01J37/32; H01J37/32009; H01J37/32192; H01J37/32357; H01J37/32431; H01J37/3244; H01J37/32798; H01J37/32853; H01J37/32862; H01J37/32917; H01J37/32935; H01J37/32963; Y; Y10; Y10S; Y10S438/00; Y10S438/905

Claims Analysis

Total Claims: 21
Claim 1
Independent Claim 103 words
A method for stabilizing plasma generation in an applicator tube coupled to a processing chamber, said processing chamber for containing a substrate, said method comprising steps of: introducing a first gas into said applicator tube; applying microwaves at a first power level to said applicator tube to produce a first plasma in said applicator tube from said first gas in said applicator tube; adding a second gas into said applicator tube to produce a second plasma in said applicator tube from said first gas and said second gas in said applicator tube; and increasing said first power level to a second power level.
Claim 2
Independent Claim 103 words
A method for stabilizing plasma generation in an applicator tube coupled to a processing chamber, said processing chamber for containing a substrate, said method comprising steps of: introducing a first gas into said applicator tube; applying microwaves at a first power level to said applicator tube to produce a first plasma in said applicator tube from said first gas in said applicator tube; adding a second gas into said applicator tube to produce a second plasma in said applicator tube from said first gas and said second gas in said applicator tube; and increasing said first power level to a second power level.
Claim 3
Dependent Claim 21 words
The method of claim 1 wherein said second gas is a reactive gas and said first gas is an inert gas.
Claim 4
Dependent Claim 13 words
The method of claim 2 wherein said reactive gas comprises NF 3 .
Claim 5
Dependent Claim 25 words
The method of claim 2 wherein said second plasma provides for cleaning of residues from surfaces in said processing chamber coupled to said applicator tube.
Claim 6
Dependent Claim 17 words
The method of claim 2 wherein said increasing step is performed substantially simultaneously with said adding step.
Claim 7
Dependent Claim 13 words
The method of claim 5 wherein said inert gas comprises N 2 .
Claim 8
Dependent Claim 13 words
The method of claim 1 wherein said applicator tube is comprised of ceramic.
Claim 9
Dependent Claim 17 words
The method of claim 1 wherein said applicator tube is comprised of Al 2 O 3 .
Claim 10
Dependent Claim 16 words
The method of claim 8 wherein said applicator tube has a diameter between about 3-4 inches.
Claim 11
Dependent Claim 22 words
The method of claim 1 wherein said first power level is at an intermediate point between zero and said second power level.
Claim 12
Dependent Claim 23 words
The method of claim 2 wherein said increasing step includes a continuous ramping of said first power level to said second power level.
Claim 13
Dependent Claim 25 words
The method of claim 2 wherein said increasing step includes a series of discrete steps from said first power level to said second power level.
Claim 14
Dependent Claim 15 words
The method of claim 1 wherein said first power level is between about 200-400 Watts.
Claim 15
Dependent Claim 15 words
The method of claim 1 wherein said second power level is between about 500-2500 Watts.
Claim 16
Dependent Claim 23 words
The method of claim 2 wherein said first power level is about 300 Watts and said second power level is about 2100 Watts.
Claim 17
Dependent Claim 14 words
The method of claim 2 wherein said power levels is adjusted by a controller.
Claim 18
Dependent Claim 40 words
The method of claim 2 wherein said inert gas comprising N 2 is introduced at a flow rate between about 100-400 sccm and wherein said reactive gas comprising NF 3 is introduced at a flow rate between about 600-1100 sccm.
Claim 19
Dependent Claim 32 words
The method of claim 2 further comprising steps of: stopping introduction of said first gas into said applicator tube to produce a third plasma from said second gas in said applicator tube.
Claim 20
Dependent Claim 25 words
The method of claim 18 wherein said third plasma provides for cleaning of residues from surfaces in said processing chamber coupled to said applicator tube.
Claim 21
Dependent Claim 18 words
The method of claim 19 wherein said applicator tube is mounted near a bottom of said processing chamber.

References Cited (Backward Citations)

US4576692A Cited
US4579623A Cited
US4872947A Cited
US4951601A Cited
US5266364A Cited
US5082517A Cited
US5273609A Cited
JPH04199816A Cited
US5578163A Cited
US5282899A Cited
US5468686A Cited
US5403434A Cited

USPTO Annuity & Maintenance Windows

Annuity Stage Window Opens Payment Deadline Surcharge Period Until Estimated Fee Status
3.5 Years (Year 4) 2002-08-16 2003-02-15 2003-08-17 $2000.00 Window Closed / Lapsed
7.5 Years (Year 8) 2006-08-16 2007-02-15 2007-08-17 $3760.00 Window Closed / Lapsed
11.5 Years (Year 12) 2010-08-16 2011-02-15 2011-08-17 $7700.00 Window Closed / Lapsed

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