Formation of resistor with small occupied area

Claim 2

A resistor forming method comprising the steps of: depositing first resistor material on an insulating surface of a substrate and patterning said first resistor material to form N first resistor layers made of said first resistor material, with spaces being interposed between said first resistor layers, wherein N is an arbitrary integer of 2 or larger; forming a first insulating film on side walls adjacent two resistor layers among said N first resistor layers; depositing second resistor material to a thickness greater than a depth of each space between said first resistor layers, said second resistor material covering said first insulating film and said N first resistor layers, removing said second resistor material in a planarized manner to form (N-1) second resistor layers made of said second resistor material at respective ones of said spaces, each of said (N-1) second resistor layers being electrically separated from adjacent ones of said first resistor layers by said first and second insulating films; forming an insulating layer over the first and second resistor layers; forming holes in the insulating layer, wherein each of the holes exposes a part of the first and second resistor layers; and electrically connecting the N first resistor layers and the (N-1) second resistor layers serially by embedding the holes with conductive material to form a resistor.

Claim 3

A resistor forming method according to claim 1, wherein said first resistor layer forming step forms said N first resistor layers such that each has substantially the same width and such that each space between adjacent first resistor layers has substantially the same width.

Claim 4

A resistor forming method according to claim 1, further comprising the step of forming an external terminal conductive layer on the outermost two resistor layers among said serially connected first and second resistor layers.

Claim 5

A resistor forming method according to claim 1, wherein said second resistor layer forming step forms said second resistor layer by etching back said second resistor material in a planarized manner.

Claim 6

A resistor forming method according to claim 1, wherein said first insulating film forming step forms said first insulating film by chemical vapor deposition.

Claim 7

A resistor forming method comprising the steps of: depositing first resistor material on an insulating surface of a substrate and patterning said first resistor material to form N first resistor layers made of said first resistor material, with spaces being interposed between said first resistor layers, wherein N is an arbitrary integer of 2 or larger; forming a first insulating film on side walls of adjacent two resistor layers among said N first resistor layers; forming a second resistor material layer to a thickness greater than a depth of each space between said first resistor layers, said second resistor material layer covering said first insulating film and said N first resistor layers; depositing fluid material covering said second resistor material layer to form a planarized layer for planarizing the surface of said second resistor material layer; removing said planarized layer and said second resistor material layer in a planarized manner under the conditions of a substantially equal removing rate in the depth direction so as to leave part of said second resistor material layer in each space between said first resistor layers, to form (N-1) second resistor layers made of said second resistor material layer at respective ones of said spaces, each of said (N-1) second resistor layers being electrically separated from adjacent ones of said first resistor layers by said first insulating film; forming an insulating layer over the first and second resistor layers; forming holes in the insulating layer, wherein each of the holes exposes a part of the first and second resistor layers; and electrically connecting the N first resistor layers and the (N-1) second resistor layers serially by embedding the holes with conductive material to form a resistor.

Claim 8

A resistor forming method comprising the steps of: depositing first resistor material on an insulating surface of a substrate and patterning said first resistor material to form N first resistor layers made of said first resistor material, with spaces being interposed between said first resistor layers, wherein N is an arbitrary integer of 2 or larger; forming a first insulating film on side walls of adjacent two resistor layers among said N first resistor layers; forming a second resistor material layer to a thickness greater than a depth of each space between said first resistor layers, said second resistor material layer covering said first insulating film and said N first resistor layers; depositing fluid material covering said second resistor material layer to form a planarized layer for planarizing the surface of said second resistor material layer; removing said planarized layer and said second resistor material layer in a planarized manner under the conditions of a substantially equal removing rate in the depth direction so as to leave part of said second resistor material layer in each space between said first resistor layers, to form (N-1) second resistor layers made of said second resistor material layer at respective ones of said spaces, each of said (N-1) second resistor layers being electrically separated from adjacent ones of said first resistor layers by said first insulating film; forming an insulating layer over the first and second resistor layers; forming holes in the insulating layer, wherein each of the holes exposes a part of the first and second resistor layers; and electrically connecting the N first resistor layers and the (N-1) second resistor layers serially by embedding the holes with conductive material to form a resistor.

Claim 9

A resistor forming method comprising the steps of: depositing first polycrystalline semiconductor on an insulating surface of a substrate and patterning said first resistor material to form N first resistor layers made of said first polycrystalline semiconductor, with spaces being interposed between said first resistor layers, wherein N is an arbitrary integer of 2 or larger; forming a first insulating film on side walls of adjacent two resistor layers among said N first resistor layers; depositing second polycrystalline semiconductor to a thickness greater than a depth of each space between said first resistor layers, said second polycrystalline semiconductor covering said first insulating film and said N first resistor layers, removing said second polycrystalline semiconductor in a planarized manner to form (N-1) second resistor layers made of said second polycrystalline semiconductor at respective ones of said spaces, each of said (N-1) second resistor layers being electrically separated from adjacent ones of said first resistor layers by said first insulating film; after formation of said second resistor layers, adjusting resistivities of said first and second resistor layers by doping resistivity adjusting impurities in said first and second resistor layers; after adjusting resistivities of said first and second resistor layers, forming an insulating layer over the first and second resistor layers; forming holes in the insulating layer, wherein each of the holes exposes a part of the first and second resistor layers; and electrically connecting the N first resistor layers and the (N-1) second resistor layers serially by embedding the holes with conductive material to form a resistor.

Claim 10

A resistor forming method comprising the steps of: depositing first polycrystalline semiconductor on an insulating surface of a substrate and patterning said first resistor material to form N first resistor layers made of said first polycrystalline semiconductor, with spaces being interposed between said first resistor layers, wherein N is an arbitrary integer of 2 or larger; forming a first insulating film on side walls of adjacent two resistor layers among said N first resistor layers; depositing second polycrystalline semiconductor to a thickness greater than a depth of each space between said first resistor layers, said second polycrystalline semiconductor covering said first insulating film and said N first resistor layers, removing said second polycrystalline semiconductor in a planarized manner to form (N-1) second resistor layers made of said second polycrystalline semiconductor at respective ones of said spaces, each of said (N-1) second resistor layers being electrically separated from adjacent ones of said first resistor layers by said first insulating film; after formation of said second resistor layers, adjusting resistivities of said first and second resistor layers by doping resistivity adjusting impurities in said first and second resistor layers; after adjusting resistivities of said first and second resistor layers, forming an insulating layer over the first and second resistor layers; forming holes in the insulating layer, wherein each of the holes exposes a part of the first and second resistor layers; and electrically connecting the N first resistor layers and the (N-1) second resistor layers serially by embedding the holes with conductive material to form a resistor.

Claim 11

A resistor forming method comprising the steps of: depositing first resistor material on an insulating surface of a substrate and patterning said first resistor material to form N first resistor layers made of said first resistor material, with spaces being interposed between said first resistor layers, wherein N is an arbitrary integer of 3 or larger; forming a first insulating film on side walls of adjacent two resistor layers among said N first resistor layers; depositing second resistor material to a thickness greater than a depth of each space between said first resistor layers, said second resistor material covering said first insulating film and said N first resistor layers, removing said second resistor material in a planarized manner to form (N-1) second resistor layers made of said second resistor material at respective ones of said spaces, each of said (N-1) second resistor layers being electrically separated from adjacent ones of said first resistor layers by said first and second insulating films; forming an insulating layer over the first and second resistor layers; forming holes in the insulating layer, wherein each of the holes exposes a part of the first and second resistor layers; and electrically connecting the N first resistor layers and the (N-1) second resistor layers serially by embedding the holes with conductive material to form a resistor.

Claim 12

A resistor forming method comprising the steps of: depositing first resistor material on an insulating surface of a substrate and patterning said first resistor material to form N first resistor layers made of said first resistor material, with spaces being interposed between said first resistor layers, wherein N is an arbitrary integer of 3 or larger; forming a first insulating film on side walls of adjacent two resistor layers among said N first resistor layers; depositing second resistor material to a thickness greater than a depth of each space between said first resistor layers, said second resistor material covering said first insulating film and said N first resistor layers, removing said second resistor material in a planarized manner to form (N-1) second resistor layers made of said second resistor material at respective ones of said spaces, each of said (N-1) second resistor layers being electrically separated from adjacent ones of said first resistor layers by said first and second insulating films; forming an insulating layer over the first and second resistor layers; forming holes in the insulating layer, wherein each of the holes exposes a part of the first and second resistor layers; and electrically connecting the N first resistor layers and the (N-1) second resistor layers serially by embedding the holes with conductive material to form a resistor.

Claim 13

A resistor forming method according to claim 8, wherein said electrically connecting step connects (N-2) resistor layers of said N first resistor layers except the outermost two resistor layers on opposite sides and (N-2) resistor layers of said (N-1) second resistor layers except the outermost one resistor layer.

Claim 14

A resistor forming method comprising the steps of: depositing first polycrystalline semiconductor on an insulating surface of a substrate and patterning said first resistor material to form N first resistor layers made of said first polycrystalline semiconductor, with spaces being interposed between said first resistor layers, wherein N is an arbitrary integer of 2 or larger; forming a first insulating film on the surface of said substrate and said first resistor layers; depositing second polycrystalline semiconductor to a thickness greater than a depth of each space between said first resistor layers, said second polycrystalline semiconductor covering and said first insulating film and said N first resistor layers; removing said second polycrystalline semiconductor in a planarized manner to form (N-1) second resistor layers made of said second polycrystalline semiconductor at respective ones of said spaces, each of said (N-1) second resistor layers being electrically separated from adjacent ones of said first resistor layers by said first insulating film; removing said first insulating film on said first resistor layers; after said removing steps, adjusting resistivities of said first and second resistor layers by doping resistivity adjusting impurities into said first and second resistor layers; forming a second insulating film on said first and second resistor layers; forming contact holes by removing said second insulating film on said first resistor layers and said second insulating film on said second resistor layers; forming an insulating layer over the first and second resistor layers; forming holes in the insulating layer, wherein each of the holes exposes a part of the first and second resistor layers; and electrically connecting the N first resistor layers and the (N-1) second resistor layers serially by embedding the holes with conductive material to form a resistor.

Claim 15

A resistor forming method comprising the steps of: depositing first polycrystalline semiconductor on an insulating surface of a substrate and patterning said first resistor material to form N first resistor layers made of said first polycrystalline semiconductor, with spaces being interposed between said first resistor layers, wherein N is an arbitrary integer of 2 or larger; forming a first insulating film on the surface of said substrate and said first resistor layers; depositing second polycrystalline semiconductor to a thickness greater than a depth of each space between said first resistor layers, said second polycrystalline semiconductor covering and said first insulating film and said N first resistor layers; removing said second polycrystalline semiconductor in a planarized manner to form (N-1) second resistor layers made of said second polycrystalline semiconductor at respective ones of said spaces, each of said (N-1) second resistor layers being electrically separated from adjacent ones of said first resistor layers by said first insulating film; removing said first insulating film on said first resistor layers; after said removing steps, adjusting resistivities of said first and second resistor layers by doping resistivity adjusting impurities into said first and second resistor layers; forming a second insulating film on said first and second resistor layers; forming contact holes by removing said second insulating film on said first resistor layers and said second insulating film on said second resistor layers; forming an insulating layer over the first and second resistor layers; forming holes in the insulating layer, wherein each of the holes exposes a part of the first and second resistor layers; and electrically connecting the N first resistor layers and the (N-1) second resistor layers serially by embedding the holes with conductive material to form a resistor.

Claim 16

A resistor forming method according to claim 1, wherein each of said N first resistor layers and said (N-1) second resistor layers has opposed first and second ends, the respective first ends of said N first resistor layers and (N-1) second resistor layers being located at a first side of said substrate and the respective second ends of said N first resistor layers and said (N-1) second resistor layers being located at a second opposed side of said substrate, and wherein said step of forming holes includes forming a first set of holes, each of which exposes the respective first ends of adjacent N first resistor layers and (N-1) second resistor layers, and a second set of holes, each of which exposes the respective second ends of adjacent N first resistor layers and (N-1) second resistor layers, the first set of holes being in staggered relationship to the second set of holes so that when the holes are embedded with conductive material in said electrical connecting step, said N first resistor layers and said (N-1) second resistor layers are serially connected such as to form a resistor having a zigzag configuration.

Claim 17

A resistor forming method according to claim 6, wherein each of said N first resistor layers and said (N-1) second resistor layers has opposed first and second ends, the respective first ends of said N first resistor layers and (N-1) second resistor layers being located at a first side of said substrate and the respective second ends of said N first resistor layers and said (N-1) second resistor layers being located at a second opposed side of said substrate, and wherein said step of forming holes includes forming a first set of holes, each of which exposes the respective first ends of adjacent N first resistor layers and (N-1) second resistor layers, and a second set of holes, each of which exposes the respective second ends of adjacent N first resistor layers and (N-1) second resistor layers, the first set of holes being in staggered relationship to the second set of holes so that when the holes are embedded with conductive material in said electrical connecting step, said N first resistor layers and said (N-1) second resistor layers are serially connected such as to form a resistor having a zigzag configuration.

Claim 18

A resistor forming method according to claim 7, wherein each of said N first resistor layers and said (N-1) second resistor layers has opposed first and second ends, the respective first ends of said N first resistor layers and (N-1) second resistor layers being located at a first side of said substrate and the respective second ends of said N first resistor layers and said (N-1) second resistor layers being located at a second opposed side of said substrate, and wherein said step of forming holes includes forming a first set of holes, each of which exposes the respective first ends of adjacent N first resistor layers and (N-1) second resistor layers, and a second set of holes, each of which exposes the respective second ends of adjacent N first resistor layers and (N-1) second resistor layers, the first set of holes being in staggered relationship to the second set of holes so that when the holes are embedded with conductive material in said electrical connecting step, said N first resistor layers and said (N-1) second resistor layers are serially connected such as to form a resistor having a zigzag configuration.

Claim 19

A resistor forming method according to claim 8, wherein each of said N first resistor layers and said (N-1) second resistor layers has opposed first and second ends, the respective first ends of said N first resistor layers and (N-1) second resistor layers being located at a first side of said substrate and the respective second ends of said N first resistor layers and said (N-1) second resistor layers being located at a second opposed side of said substrate, and wherein said step of forming holes includes forming a first set of holes, each of which exposes the respective first ends of adjacent N first resistor layers and (N-1) second resistor layers, and a second set of holes, each of which exposes the respective second ends of adjacent N first resistor layers and (N-1) second resistor layers, the first set of holes being in staggered relationship to the second set of holes so that when the holes are embedded with conductive material in said electrical connecting step, said N first resistor layers and said (N-1) second resistor layers are serially connected such as to form a resistor having a zigzag configuration.

Claim 20

A resistor forming method according to claim 10, wherein each of said N first resistor layers and said (N-1) second resistor layers has opposed first and second ends, the respective first ends of said N first resistor layers and (N-1) second resistor layers being located at a first side of said substrate and the respective second ends of said N first resistor layers and said (N-1) second resistor layers being located at a second opposed side of said substrate, and wherein said step of forming holes includes forming a first set of holes, each of which exposes the respective first ends of adjacent N first resistor layers and (N-1) second resistor layers, and a second set of holes, each of which exposes the respective second ends of adjacent N first resistor layers and (N-1) second resistor layers, the first set of holes being in staggered relationship to the second set of holes so that when the holes are embedded with conductive material in said electrical connecting step, said N first resistor layers and said (N-1) second resistor layers are serially connected such as to form a resistor having a zigzag configuration.