Patent US5932900A successfully refreshed from Google Patents.
US5932900A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Flexible cell for gate array
Assignee: Faraday Technology Corp
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Filing: 1997-09-30
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Granted: 1999-08-03
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Expires: 2017-09-30
Abstract
Abstract The invention provides an improvement in a cell structure for gate arrays. By using the cell in gate arrays, the design flexibility and the symmetry feature of the gate array can be retained. By providing transistors of different sizes, the design can possess more flexibility and more efficiency. Moreover, a denser chip layout can be completed. Thus, average wire lengths used for interconnections in the chip design may be shorter than previously possible. Also, better utilization of available chip area can be made. Thus, it becomes possible to flexibly and optimally use every area of the chip.
Inventors
- 👤 Hsiao-Ping Lin
- 👤 Chia-Wei Wang
- 👤 Chi-Yi Hwang
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-08 15:42
CPC Classifications
H; H10; H10D; H10D84/00; H10D84/90; H10D84/903; H10D84/907
Claims Analysis
Total Claims: 21
Claim 1
Independent Claim
101 words
A cell for use in a gate array, comprising: a first site, including two first active areas, one of the first active areas having two P-type transistors and the other of the first active areas having two N-type transistors; a second site, including two second active areas, one of the second active areas having two P-type transistors and the other of the second active areas having two N-type transistors, wherein the transistors of the second site are smaller than the transistors of the first site in size; and a plurality of substrate taps, located in the cell in the second site.
Claim 2
Dependent Claim
101 words
A cell for use in a gate array, comprising: a first site, including two first active areas, one of the first active areas having two P-type transistors and the other of the first active areas having two N-type transistors; a second site, including two second active areas, one of the second active areas having two P-type transistors and the other of the second active areas having two N-type transistors, wherein the transistors of the second site are smaller than the transistors of the first site in size; and a plurality of substrate taps, located in the cell in the second site.
Claim 3
Dependent Claim
42 words
A cell as claimed in claim 1, wherein parts of the substrate taps are located in a first portion between the two P-type transistors, and the others of the substrate taps are located in a second portion between the two N-type transistors.
Claim 4
Dependent Claim
52 words
A cell as claimed in claim 1, wherein gate terminals of the P-type and N-type transistors in the first active area of the first site are connected together by a common gate and gate terminals of the P-type and N-type transistors of the second active area of the second site are disconnected.
Claim 5
Dependent Claim
43 words
A cell as claimed in claim 1, wherein the P-type transistor of the first site is larger than the P-type transistor of the second site, and the N-type transistor of the first site is larger than the N-type transistor of the second site.
Claim 6
Dependent Claim
26 words
A cell as claimed in claim 1, wherein the P-type transistor is larger than the N-type transistor in each of the first and the second site.
Claim 7
Dependent Claim
138 words
A cell for use of a gate array, comprising: a first site, including two first active areas, one of the first active areas having two P-type transistors and the other one of the first active areas having two N-type transistors; a second site, including two second active areas, one of the second active areas having two P-type transistors and the other of the second active areas having two N-type transistors, wherein the transistors of the second site are smaller than the transistors of the first site; and a plurality of substrate taps, located between the two second active areas in the second site, wherein parts of the substrate taps are located in a first portion between the two P-type transistors, and the others of the substrate taps are located in a second portion between the two N-type transistors.
Claim 8
Dependent Claim
138 words
A cell for use of a gate array, comprising: a first site, including two first active areas, one of the first active areas having two P-type transistors and the other one of the first active areas having two N-type transistors; a second site, including two second active areas, one of the second active areas having two P-type transistors and the other of the second active areas having two N-type transistors, wherein the transistors of the second site are smaller than the transistors of the first site; and a plurality of substrate taps, located between the two second active areas in the second site, wherein parts of the substrate taps are located in a first portion between the two P-type transistors, and the others of the substrate taps are located in a second portion between the two N-type transistors.
Claim 9
Dependent Claim
51 words
A cell as claimed in claim 6, wherein gate terminals of the P-type and N-type transistors of the first active area of the first site are connected together by common gate and gate terminals of the P-type and N-type transistors of the second active area of the second site are disconnected.
Claim 10
Dependent Claim
43 words
A cell as claimed in claim 6, wherein the P-type transistor of the first site is larger than the P-type transistor of the second site, and the N-type transistor of the first site is larger than the N-type transistor of the second site.
Claim 11
Dependent Claim
25 words
A cell as claimed in claim 6, wherein the P-type transistor is larger than the N-type transistor in each of the first and second site.
Claim 12
Dependent Claim
152 words
A cell for use in a gate array, comprising: a first site, including two first active areas, one of the first active areas having two P-type transistors and the other one of the first active areas having two N-type transistors; a second site, including two second active areas, one of the second active areas having two P-type transistors and the other one of the second active areas having two N-type transistors, wherein the transistors of the second site are smaller than the transistors of the first site in size and wherein gate terminals of the P-type and N-type transistors of the first active area of the first site are connected together by a common gate and gate terminals of the P-type and N-type transistors of the second active area of the second site are disconnected; and a plurality of substrate taps, located between the two second active areas of the second site.
Claim 13
Dependent Claim
152 words
A cell for use in a gate array, comprising: a first site, including two first active areas, one of the first active areas having two P-type transistors and the other one of the first active areas having two N-type transistors; a second site, including two second active areas, one of the second active areas having two P-type transistors and the other one of the second active areas having two N-type transistors, wherein the transistors of the second site are smaller than the transistors of the first site in size and wherein gate terminals of the P-type and N-type transistors of the first active area of the first site are connected together by a common gate and gate terminals of the P-type and N-type transistors of the second active area of the second site are disconnected; and a plurality of substrate taps, located between the two second active areas of the second site.
Claim 14
Dependent Claim
43 words
A cell as claimed in claim 10, wherein the P-type transistor of the first site is larger than the P-type transistor in the second site, and the N-type transistor of the first site is larger than the N-type transistor of the second site.
Claim 15
Dependent Claim
25 words
A cell as claimed in claim 11, wherein the P-type transistor is larger than the N-type transistor in each of the first and second sites.
Claim 16
Dependent Claim
91 words
A gate array, comprising a plurality of cell, wherein each of the cells comprising: a first site, including two first active areas, one of the first active areas having two P-type transistors and the other of the first active areas having two N-type transistors; and a second site, including two second active areas, one of the second active areas having two P-type transistors and the other of the second active areas having two N-type transistors, wherein the transistors of the second site are smaller than the transistors of the first site.
Claim 17
Dependent Claim
91 words
A gate array, comprising a plurality of cell, wherein each of the cells comprising: a first site, including two first active areas, one of the first active areas having two P-type transistors and the other of the first active areas having two N-type transistors; and a second site, including two second active areas, one of the second active areas having two P-type transistors and the other of the second active areas having two N-type transistors, wherein the transistors of the second site are smaller than the transistors of the first site.
Claim 18
Dependent Claim
120 words
A gate array, comprising a plurality of cell, wherein each of the cells comprising: a first site, including two first active areas, one of the first active areas having two P-type transistors and the other of the first active areas having two N-type transistors; and a second site, including two second active areas, one of the second active areas having two P-type transistors and the other of the second active areas having two N-type transistors, wherein gate terminals of the P-type and N-type transistors in the first active area of the first site are connected together by a common gate and gate terminals of the P-type and N-type transistors of the second active area of the second site are disconnected.
Claim 19
Dependent Claim
120 words
A gate array, comprising a plurality of cell, wherein each of the cells comprising: a first site, including two first active areas, one of the first active areas having two P-type transistors and the other of the first active areas having two N-type transistors; and a second site, including two second active areas, one of the second active areas having two P-type transistors and the other of the second active areas having two N-type transistors, wherein gate terminals of the P-type and N-type transistors in the first active area of the first site are connected together by a common gate and gate terminals of the P-type and N-type transistors of the second active area of the second site are disconnected.
Claim 20
Dependent Claim
110 words
A gate array, comprising a plurality of cell, wherein each of the cells comprising: a first site, including two first active areas, one of the first active areas having two P-type transistors and the other of the first active areas having two N-type transistors; a second site, including two second active areas, one of the second active areas having two P-type transistors and the other of the second active areas having two N-type transistors, wherein the transistors of the second site are smaller than the transistors of the first site; and a plurality of substrate taps, located of the cell between the two second active areas of the second site.
Claim 21
Dependent Claim
110 words
A gate array, comprising a plurality of cell, wherein each of the cells comprising: a first site, including two first active areas, one of the first active areas having two P-type transistors and the other of the first active areas having two N-type transistors; a second site, including two second active areas, one of the second active areas having two P-type transistors and the other of the second active areas having two N-type transistors, wherein the transistors of the second site are smaller than the transistors of the first site; and a plurality of substrate taps, located of the cell between the two second active areas of the second site.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2002-08-02 | 2003-02-01 | 2003-08-03 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2006-08-02 | 2007-02-01 | 2007-08-03 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2010-08-02 | 2011-02-01 | 2011-08-03 | $7700.00 | Window Closed / Lapsed |