US5926730A
Expired / Lapsed
US
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Conductor layer nitridation
Assignee: Micron Technology Inc
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Filing: 1997-02-19
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Granted: 1999-07-20
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Expires: 2017-02-19
Abstract
Abstract Methods and apparatus for forming word line stacks comprise forming a thin nitride layer coupled between a bottom silicon layer and a conductor layer. In a further embodiment, a diffusion barrier layer is coupled between the thin nitride layer and the bottom silicon layer. The thin nitride layer is formed by annealing a silicon oxide film in a nitrogen-containing ambient.
Inventors
- 👤 Yongjun Hu
- 👤 Randhir P. S. Thakur
- 👤 Scott DeBoer
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 05:57
CPC Classifications
H; H10; H10D; H10D64/00; H10D64/01; H10D64/013; H10D64/01302; H10D64/01304; H10D64/01306; H10D64/01308; H10D64/0131; H10D64/01312; H10D64/60; H10D64/66; H10D64/661; H10D64/662; H10D64/664; H10B; H10B12/00; H10B12/30; H10B12/48; H10B12/488; Y; Y10; Y10S; Y10S257/00; Y10S257/914; Y10S257/915
Claims Analysis
Total Claims: 39
Claim 1
Independent Claim
81 words
A method for manufacturing a semiconductor structure on a substrate, comprising: forming a first silicon oxide layer on the substrate; forming a bottom silicon layer on the first silicon oxide layer; forming a second silicon oxide layer on the bottom silicon layer; annealing the second silicon oxide layer in a nitrogen-containing ambient, thereby forming a nitrogen-doped silicon oxide layer; depositing a titanium layer onto the nitrogen-doped silicon oxide layer; and annealing the titanium layer to form a titanium silicide conductor layer.
Claim 2
Independent Claim
81 words
A method for manufacturing a semiconductor structure on a substrate, comprising: forming a first silicon oxide layer on the substrate; forming a bottom silicon layer on the first silicon oxide layer; forming a second silicon oxide layer on the bottom silicon layer; annealing the second silicon oxide layer in a nitrogen-containing ambient, thereby forming a nitrogen-doped silicon oxide layer; depositing a titanium layer onto the nitrogen-doped silicon oxide layer; and annealing the titanium layer to form a titanium silicide conductor layer.
Claim 3
Dependent Claim
27 words
The method of claim 1, wherein forming a nitrogen-doped silicon oxide layer comprises a nitrogen-doped silicon oxide layer having a thickness of approximately 20 to 50 angstroms.
Claim 4
Independent Claim
94 words
A method for manufacturing a semiconductor structure on a substrate, comprising: forming a first silicon oxide layer on the substrate; forming a bottom silicon layer on the first silicon oxide layer; forming a nitrogen-doped silicon oxide layer on the bottom silicon layer, wherein forming a nitrogen-doped silicon oxide layer comprises: forming a second silicon oxide layer on the bottom silicon layer; and annealing the second silicon oxide layer in a nitrogen-containing ambient; depositing a titanium layer onto the nitrogen-doped silicon oxide layer; and annealing the titanium layer to form a titanium silicide conductor layer.
Claim 5
Independent Claim
94 words
A method for manufacturing a semiconductor structure on a substrate, comprising: forming a first silicon oxide layer on the substrate; forming a bottom silicon layer on the first silicon oxide layer; forming a nitrogen-doped silicon oxide layer on the bottom silicon layer, wherein forming a nitrogen-doped silicon oxide layer comprises: forming a second silicon oxide layer on the bottom silicon layer; and annealing the second silicon oxide layer in a nitrogen-containing ambient; depositing a titanium layer onto the nitrogen-doped silicon oxide layer; and annealing the titanium layer to form a titanium silicide conductor layer.
Claim 6
Dependent Claim
35 words
The method of claim 3, wherein forming a nitrogen-doped silicon oxide layer comprises a nitrogen-containing ambient comprising at least one material selected from the group consisting of N 2 O, NO and NH 3 .
Claim 7
Dependent Claim
28 words
The method of claim 3, wherein annealing the second silicon oxide layer comprises using a method selected from the group consisting of rapid thermal nitridation and plasma nitridation.
Claim 8
Dependent Claim
17 words
The method of claim 3, wherein forming a second silicon oxide layer comprises using rapid thermal oxidation.
Claim 9
Dependent Claim
33 words
The method of claim 6, wherein forming a second silicon oxide layer further comprises introducing oxygen at a pressure of approximately 50 Torr and a temperature of approximately 800 to 1,050 degrees Celsius.
Claim 10
Dependent Claim
27 words
The method of claim 3, wherein forming a second silicon oxide layer comprises a silicon oxide layer formed to a thickness of approximately 20 to 30 angstroms.
Claim 11
Dependent Claim
29 words
The method of claim 1, wherein forming a nitrogen-doped silicon oxide layer comprises a nitrogen-doped silicon oxide layer having a nitrogen concentration of approximately 10 13 ions/cm 2 .
Claim 12
Dependent Claim
29 words
The method of claim 1, wherein forming a bottom silicon layer comprises a material selected from the group consisting of intrinsic silicon, intrinsic polysilicon, doped silicon, and doped polysilicon.
Claim 13
Dependent Claim
22 words
The method of claim 1, further comprising forming a titanium nitride cap on the titanium layer prior to annealing the titanium layer.
Claim 14
Dependent Claim
23 words
The method of claim 11, wherein forming a titanium nitride cap comprises a titanium nitride cap having a thickness of approximately 25 nanometers.
Claim 15
Independent Claim
90 words
A method for manufacturing a semiconductor structure on a substrate, comprising: forming a first silicon oxide layer on the substrate; forming a bottom silicon layer on the first silicon oxide layer; forming a nitrogen-doped silicon oxide layer on the bottom silicon layer; depositing a titanium layer onto the nitrogen-doped silicon oxide layer; annealing the titanium layer to form a titanium silicide conductor layer; forming a cap dielectric on the titanium silicide conductor layer; etching each layer to define a word line stack; and forming spacers alongside the word line stack.
Claim 16
Independent Claim
90 words
A method for manufacturing a semiconductor structure on a substrate, comprising: forming a first silicon oxide layer on the substrate; forming a bottom silicon layer on the first silicon oxide layer; forming a nitrogen-doped silicon oxide layer on the bottom silicon layer; depositing a titanium layer onto the nitrogen-doped silicon oxide layer; annealing the titanium layer to form a titanium silicide conductor layer; forming a cap dielectric on the titanium silicide conductor layer; etching each layer to define a word line stack; and forming spacers alongside the word line stack.
Claim 17
Independent Claim
66 words
A method for manufacturing a semiconductor structure on a semiconductor layer, comprising: forming a bottom silicon layer, supported by the semiconductor layer; forming a diffusion barrier layer, supported by the bottom silicon layer; forming a nitrogen-doped silicon oxide layer on the diffusion barrier layer; depositing a titanium layer onto the nitrogen-doped silicon oxide layer; and annealing the titanium layer to form a titanium silicide conductor layer.
Claim 18
Independent Claim
66 words
A method for manufacturing a semiconductor structure on a semiconductor layer, comprising: forming a bottom silicon layer, supported by the semiconductor layer; forming a diffusion barrier layer, supported by the bottom silicon layer; forming a nitrogen-doped silicon oxide layer on the diffusion barrier layer; depositing a titanium layer onto the nitrogen-doped silicon oxide layer; and annealing the titanium layer to form a titanium silicide conductor layer.
Claim 19
Dependent Claim
33 words
The method of claim 14, wherein forming a nitrogen-doped silicon oxide layer comprises: forming a silicon oxide layer on the diffusion barrier layer; and annealing the silicon oxide layer in a nitrogen-containing ambient.
Claim 20
Dependent Claim
34 words
The method of claim 15, wherein annealing the silicon oxide layer comprises a nitrogen-containing ambient comprising at least one material selected from the group consisting of N 2 O, NO and NH 3 .
Claim 21
Independent Claim
81 words
A method for manufacturing a semiconductor structure on a semiconductor layer, comprising: forming a bottom silicon layer, supported by the semiconductor layer; forming a diffusion barrier layer, supported by the bottom silicon layer; forming a silicon oxide layer on the diffusion barrier layer; annealing the silicon oxide layer in a nitrogen-containing ambient to form a nitrogen-doped silicon oxide layer; depositing a titanium layer onto the nitrogen-doped silicon oxide layer; and annealing the titanium layer to form a titanium silicide conductor layer.
Claim 22
Independent Claim
81 words
A method for manufacturing a semiconductor structure on a semiconductor layer, comprising: forming a bottom silicon layer, supported by the semiconductor layer; forming a diffusion barrier layer, supported by the bottom silicon layer; forming a silicon oxide layer on the diffusion barrier layer; annealing the silicon oxide layer in a nitrogen-containing ambient to form a nitrogen-doped silicon oxide layer; depositing a titanium layer onto the nitrogen-doped silicon oxide layer; and annealing the titanium layer to form a titanium silicide conductor layer.
Claim 23
Dependent Claim
34 words
The method of claim 17, wherein annealing the silicon oxide layer comprises a nitrogen-containing ambient comprising at least one material selected from the group consisting of N 2 O, NO and NH 3 .
Claim 24
Independent Claim
69 words
A method for manufacturing a semiconductor structure on a semiconductor layer, comprising: forming a bottom silicon layer on the semiconductor layer; forming a silicon oxide layer on the bottom silicon layer; annealing the silicon oxide layer in a nitrogen-containing ambient to form a nitrogen-doped silicon oxide layer; depositing a titanium layer onto the nitrogen-doped silicon oxide layer; and annealing the titanium layer to form a titanium silicide conductor layer.
Claim 25
Independent Claim
69 words
A method for manufacturing a semiconductor structure on a semiconductor layer, comprising: forming a bottom silicon layer on the semiconductor layer; forming a silicon oxide layer on the bottom silicon layer; annealing the silicon oxide layer in a nitrogen-containing ambient to form a nitrogen-doped silicon oxide layer; depositing a titanium layer onto the nitrogen-doped silicon oxide layer; and annealing the titanium layer to form a titanium silicide conductor layer.
Claim 26
Dependent Claim
45 words
The method of claim 19, wherein annealing the silicon oxide layer in a nitrogen-containing ambient to form a nitrogen-doped silicon oxide layer comprises a nitrogen-containing ambient comprising at least one material selected from the group consisting of N 2 O, NO and NH 3 .
Claim 27
Dependent Claim
27 words
The method of claim 19, wherein annealing the silicon oxide layer comprises using a method selected from the group consisting of rapid thermal nitridation and plasma nitridation.
Claim 28
Dependent Claim
16 words
The method of claim 19, wherein forming a silicon oxide layer comprises using rapid thermal oxidation.
Claim 29
Dependent Claim
32 words
The method of claim 22, wherein forming a silicon oxide layer further comprises introducing oxygen at a pressure of approximately 50 Torr and a temperature of approximately 800 to 1,050 degrees Celsius.
Claim 30
Dependent Claim
39 words
The method of claim 19, wherein annealing the silicon oxide layer in a nitrogen-containing ambient to form a nitrogen-doped silicon oxide layer comprises a nitrogen-doped silicon oxide layer having a nitrogen concentration of approximately 10 13 ions/cm 2 .
Claim 31
Dependent Claim
29 words
The method of claim 19, wherein forming a bottom silicon layer comprises a material selected from the group consisting of intrinsic silicon, intrinsic polysilicon, doped silicon, and doped polysilicon.
Claim 32
Independent Claim
90 words
A method for manufacturing a semiconductor structure on a substrate, comprising: forming a first silicon oxide layer on the substrate; forming a bottom silicon layer on the first silicon oxide layer; forming a nitrogen-doped silicon oxide layer on the bottom silicon layer; depositing a titanium layer onto the nitrogen-doped silicon oxide layer; annealing the titanium layer to form a titanium silicide conductor layer; forming a cap dielectric on the titanium silicide conductor layer; etching each layer to define a word line stack; and forming spacers alongside the word line stack.
Claim 33
Independent Claim
90 words
A method for manufacturing a semiconductor structure on a substrate, comprising: forming a first silicon oxide layer on the substrate; forming a bottom silicon layer on the first silicon oxide layer; forming a nitrogen-doped silicon oxide layer on the bottom silicon layer; depositing a titanium layer onto the nitrogen-doped silicon oxide layer; annealing the titanium layer to form a titanium silicide conductor layer; forming a cap dielectric on the titanium silicide conductor layer; etching each layer to define a word line stack; and forming spacers alongside the word line stack.
Claim 34
Independent Claim
95 words
A method for manufacturing a semiconductor structure on a semiconductor layer, comprising: forming a bottom silicon layer on the semiconductor layer; forming a silicon oxide layer on the bottom silicon layer; annealing the silicon oxide layer in a nitrogen-containing ambient to form a nitrogen-doped silicon oxide layer; depositing a titanium layer onto the nitrogen-doped silicon oxide layer; annealing the titanium layer to form a titanium silicide conductor layer; forming a cap dielectric on the titanium silicide conductor layer; etching each layer to define a word line stack; and forming spacers alongside the word line stack.
Claim 35
Independent Claim
95 words
A method for manufacturing a semiconductor structure on a semiconductor layer, comprising: forming a bottom silicon layer on the semiconductor layer; forming a silicon oxide layer on the bottom silicon layer; annealing the silicon oxide layer in a nitrogen-containing ambient to form a nitrogen-doped silicon oxide layer; depositing a titanium layer onto the nitrogen-doped silicon oxide layer; annealing the titanium layer to form a titanium silicide conductor layer; forming a cap dielectric on the titanium silicide conductor layer; etching each layer to define a word line stack; and forming spacers alongside the word line stack.
Claim 36
Independent Claim
79 words
A method for manufacturing a semiconductor structure on a substrate, comprising: forming a first silicon oxide layer on the substrate; forming a bottom silicon layer on the first silicon oxide layers; forming a nitrogen-doped silicon oxide layer on the bottom silicon layer; depositing a titanium layer onto the nitrogen-doped silicon oxide layer; forming a titanium nitride cap on the titanium layer; and annealing the titanium layer, after forming the titanium nitride cap, to form a titanium silicide conductor layer.
Claim 37
Independent Claim
79 words
A method for manufacturing a semiconductor structure on a substrate, comprising: forming a first silicon oxide layer on the substrate; forming a bottom silicon layer on the first silicon oxide layers; forming a nitrogen-doped silicon oxide layer on the bottom silicon layer; depositing a titanium layer onto the nitrogen-doped silicon oxide layer; forming a titanium nitride cap on the titanium layer; and annealing the titanium layer, after forming the titanium nitride cap, to form a titanium silicide conductor layer.
Claim 38
Independent Claim
84 words
A method for manufacturing a semiconductor structure on a semiconductor layer, comprising: forming a bottom silicon layer on the semiconductor layer; forming a silicon oxide layer on the bottom silicon layer; annealing the silicon oxide layer in a nitrogen-containing ambient to form a nitrogen-doped silicon oxide layer; depositing a titanium layer onto the nitrogen-doped silicon oxide layer; forming a titanium nitride cap on the titanium layer; and annealing the titanium layer, after forming the titanium nitride cap, to form a titanium silicide conductor layer.
Claim 39
Independent Claim
84 words
A method for manufacturing a semiconductor structure on a semiconductor layer, comprising: forming a bottom silicon layer on the semiconductor layer; forming a silicon oxide layer on the bottom silicon layer; annealing the silicon oxide layer in a nitrogen-containing ambient to form a nitrogen-doped silicon oxide layer; depositing a titanium layer onto the nitrogen-doped silicon oxide layer; forming a titanium nitride cap on the titanium layer; and annealing the titanium layer, after forming the titanium nitride cap, to form a titanium silicide conductor layer.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2002-07-19 | 2003-01-18 | 2003-07-20 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2006-07-19 | 2007-01-18 | 2007-07-20 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2010-07-19 | 2011-01-18 | 2011-07-20 | $7700.00 | Window Closed / Lapsed |