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US5923074A
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Low capacitance interconnect structure for integrated circuits using decomposed polymers
Assignee: Texas Instruments Inc
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Filing: 1996-12-03
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Granted: 1999-07-13
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Expires: 2016-12-03
Abstract
Abstract A low capacitance interconnect structure and process is provided for integrating low-k decomposed polymers into integrated circuit structures and processes, especially those requiring multiple levels of interconnect lines, for reduced capacitance over prior art structures. Embodiments of the present invention use polymers which typically decompose into gases with lower dielectric coefficients than the original polymer to provide a lower dielectric constant material between conductive interconnects on an integrated circuit. The materials are decomposed after being sealed in with a cap layer to prevent contamination of the gas filled void left after decomposition. The present invention also combines the advantages of SiO2 with low dielectric decomposed polymers by placing the low decomposed material only between tightly spaced lines. The low-k polymer material can be applied by spin-on techniques or by vapor deposition.
Inventors
- 👤 Shin-puu Jeng
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-05 12:19
CPC Classifications
H; H10; H10W; H10W20/00; H10W20/40; H10W20/495; H10W20/45; H10W20/48
Claims Analysis
Total Claims: 14
Claim 1
Independent Claim
57 words
A microelectronic structure comprising: (a) a semiconductor substrate; (b) a dielectric layer on said semiconductor substrate; (c) a plurality of interconnects on said dielectric layer on said semiconductor substrate; and (d) a decomposed dielectric material comprising compounds formed from decomposing a dielectric, wherein the compounds include at least one gas, between at least two of said interconnects.
Claim 2
Dependent Claim
57 words
A microelectronic structure comprising: (a) a semiconductor substrate; (b) a dielectric layer on said semiconductor substrate; (c) a plurality of interconnects on said dielectric layer on said semiconductor substrate; and (d) a decomposed dielectric material comprising compounds formed from decomposing a dielectric, wherein the compounds include at least one gas, between at least two of said interconnects.
Claim 3
Dependent Claim
18 words
The structure according to claim 1, further comprising a cap layer above said decomposed dielectric between said interconnects.
Claim 4
Dependent Claim
46 words
The structure of claim 1, wherein said dielectric used to obtain said compounds between said at least two interconnects is a polymer selected from the group consisting of: Polyimide, Polysilsesquioxane, Benzocyclobutene, Parylene C, Parylene N, Florinated polyimide, Parylene F, Poly-naphthalene, Amorphous Telflon, Polymer foams, Aerogel, Xerogel.
Claim 5
Dependent Claim
20 words
The structure of claim 1 further comprising an interlayer dielectric layer formed over said decomposed dielectric layer and said interconnects.
Claim 6
Dependent Claim
21 words
The structure of claim 1 further comprising a liner layer between at least two of said interconnects and said decomposed dielectric.
Claim 7
Dependent Claim
79 words
A microelectronic structure comprising: (b) a semiconductor substrate; (b) a dielectric layer on said semiconductor substrate; (c) a plurality of interconnects on said dielectric layer on said semiconductor substrate; (c) a decomposed dielectric material comprising compounds formed from decomposing a dielectric, wherein said compounds include at least one gas, where said decomposed dieletric material is laterally between at least two of said interconnects which are closely spaced; and (d) a cap layer over said decomposed dielectric and said interconnects.
Claim 8
Dependent Claim
79 words
A microelectronic structure comprising: (b) a semiconductor substrate; (b) a dielectric layer on said semiconductor substrate; (c) a plurality of interconnects on said dielectric layer on said semiconductor substrate; (c) a decomposed dielectric material comprising compounds formed from decomposing a dielectric, wherein said compounds include at least one gas, where said decomposed dieletric material is laterally between at least two of said interconnects which are closely spaced; and (d) a cap layer over said decomposed dielectric and said interconnects.
Claim 9
Dependent Claim
46 words
The structure of claim 6, wherein said dielectric used to obtain said compounds between said at least two interconnects is a polymer selected from the group consisting of: Polyimide, Polysilsesquioxane, Benzocyclobutene, Parylene C, Parylene N, Florinated polyimide, Parylene F, Poly-naphthalene, Amorphous Telflon, Polymer foams, Aerogel, Xerogel.
Claim 10
Dependent Claim
19 words
The structure of claim 7 further comprising an interlayer dielectric layer formed on said cap layer over said interconnects.
Claim 11
Dependent Claim
21 words
The structure of claim 8 further comprising a liner layer between at least two of said interconnects and said decomposed dielectric.
Claim 12
Dependent Claim
88 words
A microelectronic structure comprising: (a) a semiconductor substrate; (b) a dielectric layer on said semiconductor substrate; (c) a plurality of interconnects on said dielectric layer on said semiconductor substrate; (d) a decomposed dielectric material, comprising compounds formed from decomposing a dielectric, lying laterally between at least two of said interconnects which are closely spaced but not vertically between two adjacent levels of interconnect; (e) a cap layer over said decomposed dielectric and said interconnects; and (f) an interlayer dielectric layer formed on said cap layer over said interconnects.
Claim 13
Dependent Claim
88 words
A microelectronic structure comprising: (a) a semiconductor substrate; (b) a dielectric layer on said semiconductor substrate; (c) a plurality of interconnects on said dielectric layer on said semiconductor substrate; (d) a decomposed dielectric material, comprising compounds formed from decomposing a dielectric, lying laterally between at least two of said interconnects which are closely spaced but not vertically between two adjacent levels of interconnect; (e) a cap layer over said decomposed dielectric and said interconnects; and (f) an interlayer dielectric layer formed on said cap layer over said interconnects.
Claim 14
Dependent Claim
46 words
The structure of claim 10, wherein said dielectric used to obtain said compounds between said at least two interconnects is a polymer selected from the group consisting of: Polyimide, Polysilsesquioxane, Benzocyclobutene, Parylene C, Parylene N, Florinated polyimide, Parylene F, Poly-naphthalene, Amorphous Telflon, Polymer foams, Aerogel, Xerogel.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
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| 3.5 Years (Year 4) | 2002-07-12 | 2003-01-11 | 2003-07-13 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2006-07-12 | 2007-01-11 | 2007-07-13 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2010-07-12 | 2011-01-11 | 2011-07-13 | $7700.00 | Window Closed / Lapsed |