US5602060A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Process for the production of semiconductor devices
Assignee: Fujitsu Ltd
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Filing: 1996-01-04
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Granted: 1997-02-11
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Expires: 2016-01-04
Abstract
Abstract Process for the production of semiconductor devices comprising the steps of applying a solution of the specified polycarbosilane in a solvent onto a substrate having electrically conductive components fabricated therein, and curing the coated layer of the polycarbosilane at a temperature of not less than 350° C. in an oxidizing atmosphere to thereby covert the polycarbosilane layer to a silicon oxide layer. The resulting silicon oxide layer has a planarized surface and has no cracking and accordingly is useful as a dielectric layer and a protective layer in the production of semiconductor devices having a high reliability.
Inventors
- 👤 Michiko Kobayashi
- 👤 Syun-ichi Fukuyama
- 👤 Yoshihiro Nakata
- 👤 Masanori Naitou
- 👤 Hiroshi Kudo
- 👤 Yoshiyuki Ohkura
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-31 20:19
CPC Classifications
H; H10; H10P; H10P14/00; H10P14/60; H10P14/69; H10P14/692; H10P14/6921; H10P14/69215; C; C09; C09D; C09D183/00; C09D183/16; C23; C23C; C23C18/00; C23C18/02; C23C18/12; C23C18/1204; C23C18/1208; C23C18/1212; C23C18/122; C23C18/125; C23C18/1279; H10P14/65; H10P14/6516; H10P14/6529; H10P14/6532; H10W; H10W74/00; H10W74/40; H10W74/47; H10W74/476; H10P14/63; H10P14/6326; H10P14/6328; H10P14/6334; H10P14/6336; H10P14/6342; H10P14/66; H10P14/668; H10P14/6681; H10P14/6682; H10P14/6922
Claims Analysis
Total Claims: 11
Claim 1
Independent Claim
132 words
A process for the production of a semiconductor device which comprises the steps of applying a solution of polycarbosilane of the general formula (1): ##STR2## in which R 1 represents a hydrogen atom, a substituted or unsubstituted alkyl group having 1 to 4 carbon atoms or a substituted or unsubstituted aryl group; R 2 represents a substituted or unsubstituted methylene or methyn group; and m and n each is a positive integer satisfying the condition of 10<m+n<1000 and a ratio of m and N is less than 0.3, in a solvent onto a substrate having electrically conductive components fabricated therein, and curing the coated layer of the polycarbosilane at a temperature of not less than 350° C. in an oxidizing atmosphere to thereby convert the polycarbosilane layer to a silicon oxide layer.
Claim 2
Dependent Claim
132 words
A process for the production of a semiconductor device which comprises the steps of applying a solution of polycarbosilane of the general formula (1): ##STR2## in which R 1 represents a hydrogen atom, a substituted or unsubstituted alkyl group having 1 to 4 carbon atoms or a substituted or unsubstituted aryl group; R 2 represents a substituted or unsubstituted methylene or methyn group; and m and n each is a positive integer satisfying the condition of 10<m+n<1000 and a ratio of m and N is less than 0.3, in a solvent onto a substrate having electrically conductive components fabricated therein, and curing the coated layer of the polycarbosilane at a temperature of not less than 350° C. in an oxidizing atmosphere to thereby convert the polycarbosilane layer to a silicon oxide layer.
Claim 3
Dependent Claim
15 words
The process according to claim 1 in which the alkyl group is a methyl group.
Claim 4
Dependent Claim
15 words
The process according to claim 1 in which the aryl group is a phenyl group.
Claim 5
Dependent Claim
18 words
The process according to claim 1 in which the solution of polycarbosilane is spin-coated onto the topographic substrate.
Claim 6
Dependent Claim
69 words
The process according to claim 1 in which the solution of polycarbosilane of the general formula (1) wherein R 1 is a hydrogen atom or a methyl group and R 2 is a methylene or methyn group is spin-coated onto the topographic substrate, heated to a temperature of not more than 350° C., and then cured at a temperature of not less than 400° C. in an oxidizing atmosphere.
Claim 7
Dependent Claim
46 words
The process according to claim 5 in which the polycarbosilane of the general formula (1) is an insoluble recovered from the solution of the polycarbosilane represented by the formula (1), but having different m/n ratios in a solvent selected from nonprotic polar solvents or halogenated hydrocarbons.
Claim 8
Dependent Claim
53 words
The process according to claim 5 in which the polycarbosilane of the general formula (1) is a fraction received from the polycarbosilane of the formula (1) by gel-permeation chromatograph thereof, the fraction having a weight average molecular weight of not more than 2000 when calculated in terms of the molecular weitht of polystyrene.
Claim 9
Dependent Claim
85 words
The process according to claim 1 in which the solution of polycarbosilane of the general formula (1) wherein R 1 , R 2 , m and n are as defined above, is spin-coated onto the topographic substrate, subjected to a plasma treatment using fluorine as a reactive gas to thereby substitute one or more hydrogen atoms of the polycarbosilane molecule with one or more fluorine atoms, and then cured the fluorine-substituted polycarbosilane at a temperature of not less than 350° C. in an oxidizing atmosphere.
Claim 10
Dependent Claim
31 words
The process according to anyone of claims 1 to 8 which further comprises the step of forming another device having electrically conductive components fabricated therein over the resulting silicon oxide layer.
Claim 11
Dependent Claim
42 words
The process according to anyone of claims 1 to 8 in which a layer having electrically conductive components fabricated therein is the uppermost layer and thus the resulting silicon oxide layer is able to act as a protective layer from the environment.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2000-02-11 | 2000-08-12 | 2001-02-11 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2004-02-11 | 2004-08-12 | 2005-02-11 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2008-02-11 | 2008-08-12 | 2009-02-11 | $7700.00 | Window Closed / Lapsed |